Abstract: A gallium oxide substrate includes first and second main surfaces. When measured data z0(r,?) of height differences of points (r,?,z) on the first main surface from a least square plane of the first main surface are approximated by a function z(r,?)=?anmznm(r,?), a ratio of a first maximum height difference of a component of z(r,?) obtained by summing terms anmznm(r,?) with an index j of 4, 9, 16, 25, 36, 49, 64, and 81, when the second main surface is placed facing a horizontal flat surface, to a diameter of the first main surface is 0.39×10?4 or less, and a ratio of a second maximum height difference of a component of z(r,?) obtained by summing terms anmznm(r,?) with j of from 4 to 81, when an entire surface of the second main surface is adsorbed to a flat chuck surface, to the diameter is 0.59×10?4 or less.

Abstract: A method of manufacturing a gallium oxide substrate includes polishing the gallium oxide substrate with a polishing slurry, wherein the polishing slurry contains manganese dioxide particles and water.

Abstract: In a substrate for use as a mask blank including a first main surface, a normal region, a frame-shaped region and inner region are present on the first main surface. The frame-shaped region includes first to fourth corner region and first to fourth middle region. The inner region has a flatness of 100 nm or less, the flatness being determined on the basis of a least-squares plane PP1 of the normal region. When one of the corner regions is referred to as an n-th corner region and two middle regions nearest to the n-th corner region are respectively referred to as a first near middle region and a second near middle region, the specific relationship regarding the surface profile is satisfied in the n-th corner region and the first and second near middle regions.

Abstract: A glass substrate for a mask blank includes two main surfaces facing each other and surfaces to be chamfered. The surfaces to be chamfered are provided peripherally around the two main surfaces. A flatness of one of the main surfaces is 100 nm or less. On the surface to be chamfered from which substrate corner parts are excluded, each of the substrate corner part being portions where a distance from an outer end of a two-dimensional projection profile of the one of the main surfaces and the surface to be chamfered is within 10 mm, a waviness measured in a range of 2 mm at an arbitrary part in a direction parallel to one side closest to the surface to be chamfered in the two-dimensional projection profile is 50 nm or less.

Abstract: A mask blank includes a glass substrate including a first main surface and a second main surface, an absorbing film formed above the first main surface, and a conductive film formed on the second main surface. A reflective film is provided between the absorbing film and the glass substrate. In a surface of the conductive film on an opposite side to the glass substrate, when a surface shape of a square central area having a length of 142 mm and a width of 142 mm excluding a four-sided frame-shaped peripheral area thereof is expressed by the specific formula, flatness of a component obtained by summing all aklPk(x)Pl(y) with the sum of k and l being 3 or more and 25 or less is 20 nm or less.

Abstract: A glass substrate for a mask blank includes a rectangular-shaped main surface on which a film having a circuit pattern is to be formed. The main surface includes a quadrangular peripheral frame and a square-shaped center area defined by excluding the frame. The center area has a longitudinal length of 142 mm and a lateral length of 142 mm. A surface morphology of the center area is expressed by { z ? ( x , y ) = ? k = 0 N 1 ? ? l = 0 N 2 ? a kl ? P k ? ( x ) ? P l ? ( y ) P k ? ( x ) = 1 2 k ? k ! ? d k dx k ? [ ( x 2 - 1 ) k ] P l ? ( y ) = 1 2 l ? l ! ? d l dy l ? [ ( y 2 - 1 ) l ] . A flatness of a sum of compositing all of aklPk(x)Pl(y) is less than or equal to 20 nm when a sum of k and l is greater than or equal to 3 and less than or equal to 9. The flatness is less than or equal to 20 nm when a sum of k and l is greater than or equal to 10 and less than or equal to 30.

Abstract: A glass substrate for a mask blank includes a rectangular-shaped main surface on which a film having a circuit pattern is to be formed. The main surface includes a quadrangular peripheral frame and a square-shaped center area defined by excluding the frame. The center area has a longitudinal length of 142 mm and a lateral length of 142 mm. A surface morphology of the center area is expressed by the following formulas. A flatness of a sum of compositing all of aklPk(x)Pl(y) is less than or equal to 20 nm when a sum of k and l is greater than or equal to 3 and less than or equal to 9. The flatness is less than or equal to 20 nm when a sum of k and l is greater than or equal to 10 and less than or equal to 30.

Abstract: A mask blank includes a glass substrate including a first main surface and a second main surface, an absorbing film formed above the first main surface, and a conductive film formed on the second main surface. A reflective film is provided between the absorbing film and the glass substrate. In a surface of the conductive film on an opposite side to the glass substrate, when a surface shape of a square central area having a length of 142 mm and a width of 142 mm excluding a four-sided frame-shaped peripheral area thereof is expressed by the specific formula, flatness of a component obtained by summing all aklPk(x)Pl(y) with the sum of k and l being 3 or more and 25 or less is 20 nm or less.

Abstract: A glass substrate for a mask blank includes a rectangular-shaped main surface on which a film having a circuit pattern is to be formed. The main surface includes a quadrangular peripheral frame and a square-shaped center area defined by excluding the frame. The center area has a longitudinal length of 142 mm and a lateral length of 142 mm. A surface morphology of the center area is expressed by the following formulas. A flatness of a sum of compositing all of aklPk(x)Pl(y) is less than or equal to 20 nm when a sum of k and l is greater than or equal to 3 and less than or equal to 9. The flatness is less than or equal to 20 nm when a sum of k and l is greater than or equal to 10 and less than or equal to 30.

Abstract: In a substrate for use as a mask blank including a first main surface, a normal region, a frame-shaped region and inner region are present on the first main surface. The frame-shaped region includes first to fourth corner region and first to fourth middle region. The inner region has a flatness of 100 nm or less, the flatness being determined on the basis of a least-squares plane PP1 of the normal region. When one of the corner regions is referred to as an n-th corner region and two middle regions nearest to the n-th corner region are respectively referred to as a first near middle region and a second near middle region, the specific relationship regarding the surface profile is satisfied in the n-th corner region and the first and second near middle regions.

Abstract: A glass substrate for a mask blank has a rectangular planar shape. In four square regions each positioned at each corner of a first region (quality assurance region) and having one side of 8 mm, an angle between a least square plane in each the square region and that in the first region is 3.0 ?ad or less, and a PV value relative to the least square plane is 30 nm or less. In four strip regions each positioned in an area between one side of the first region and 8 mm inside the side and excluding the square regions, an angle between a least square plane in each the strip region and that in the first region is 1.5 ?ad or less, and a PV value relative to the least square plane is 15 nm or less.

Abstract: A glass substrate for a mask blank includes a rectangular-shaped main surface on which a film having a circuit pattern is to be formed. The main surface includes a quadrangular peripheral frame and a square-shaped center area defined by excluding the frame. The center area has a longitudinal length of 142 mm and a lateral length of 142 mm. A surface morphology of the center area is expressed by { z ? ( x , y ) = ? k = 0 N 1 ? ? l = 0 N 2 ? a kl ? P k ? ( x ) ? P l ? ( y ) P k ? ( x ) = 1 2 k ? k ! ? d k dx k ? [ ( x 2 - 1 ) k ] P l ? ( y ) = 1 2 l ? l ! ? d l dy l ? [ ( y 2 - 1 ) l ] . A flatness of a sum of compositing all of aklPk(x)Pl(y) is less than or equal to 20 nm when a sum of k and l is greater than or equal to 3 and less than or equal to 9. The flatness is less than or equal to 20 nm when a sum of k and l is greater than or equal to 10 and less than or equal to 30.

Abstract: A glass substrate for a mask blank includes two main surfaces facing each other and surfaces to be chamfered. The surfaces to be chamfered are provided peripherally around the two main surfaces. A flatness of one of the main surfaces is 100 nm or less. On the surface to be chamfered from which substrate corner parts are excluded, each of the substrate corner part being portions where a distance from an outer end of a two-dimensional projection profile of the one of the main surfaces and the surface to be chamfered is within 10 mm, a waviness measured in a range of 2 mm at an arbitrary part in a direction parallel to one side closest to the surface to be chamfered in the two-dimensional projection profile is 50 nm or less.

Abstract: The present invention relates to a method of finishing a pre-polished TiO2—SiO2 glass substrate, containing a step of measuring a striae-originated MSFR (MSFR0) of a major surface, a step of measuring a TiO2 concentration distribution (?TiO2) in the major surface, a first and second processing steps of processing the major surface, and a cleaning step of cleaning the major surface, in which according to the MSFR0 (nm) and the ?TiO2 (wt %), the total etching amount (nm) of a chemical etching amount of the major surface in the second processing step and another chemical etching amount of the major surface in the cleaning step is controlled to satisfy the following expression (1) Total etching amount?(10 nm?MSFR0)v/A/?TiO2 ??(1) (v is an average etching rate (nm/sec) and A is an TiO2 concentration dependency (nm/sec/wt %) of an etching rate).

Abstract: A glass substrate for a mask blank has a rectangular planar shape. In four square regions each positioned at each corner of a first region (quality assurance region) and having one side of 8 mm, an angle between a least square plane in each the square region and that in the first region is 3.0 ?ad or less, and a PV value relative to the least square plane is 30 nm or less. In four strip regions each positioned in an area between one side of the first region and 8 mm inside the side and excluding the square regions, an angle between a least square plane in each the strip region and that in the first region is 1.5 ?ad or less, and a PV value relative to the least square plane is 15 nm or less.

Abstract: A force sensor 1 includes: a force sensor chip 2 including an action portion 21, a connecting portion 23 on which strain resistive elements are disposed, and a support portion 22 for supporting the action portion 21 and the connecting portion 23; an attenuator 3 including an input portion 30 to which an external force is input, a fixing portion 32 for fixing the force sensor chip 2, and a transmission portion 31 for attenuating the external force and transmitting the attenuated external force to the action portion 21; a first glass member 11 disposed between the action portion 21 and the transmission portion 31 and a second glass member 12 disposed between the support portion 22 and the fixing portion 32, through which glass members 11, 12 the force sensor chip 2 and the attenuator 3 are joined. A single or more glass beams 13 joins the first glass member 11 and the second glass member 12 together as a single member.

Abstract: A force sensor comprises a force sensor chip, and a buffering device for dampening and applying incoming external force to the force sensor chip. The buffering device comprises an input portion to which external force is input, a sensor mount for fixing the force sensor chip to the exterior, a dampening mechanism for dampening external force, and a transmission portion for transmitting the dampened external force to the active sensing portion.

Abstract: A force sensor with a force sensor chip, and a buffering device for dampening and applying incoming external force to the force sensor chip. The buffering device includes an input portion to which external force is input, a sensor mount for fixing the force sensor chip to the exterior, a dampening mechanism for dampening external force, and a transmission portion for transmitting the dampened external force to the active sensing portion.

Abstract: A force sensor 1 includes: a force sensor chip 2 including an action portion 21, a connecting portion 23 on which strain resistive elements are disposed, and a support portion 22 for supporting the action portion 21 and the connecting portion 23; an attenuator 3 including an input portion 30 to which an external force is input, a fixing portion 32 for fixing the force sensor chip 2, and a transmission portion 31 for attenuating the external force and transmitting the attenuated external force to the action portion 21; a first glass member 11 disposed between the action portion 21 and the transmission portion 31 and a second glass member 12 disposed between the support portion 22 and the fixing portion 32, through which glass members 11, 12 the force sensor chip 2 and the attenuator 3 are joined. A single or more glass beams 13 joins the first glass member 11 and the second glass member 12 together as a single member.

Abstract: A force sensor including a force sensor chip and a shock absorbing device that has a damping mechanism is disclosed. The damping mechanism is disc-shaped and has an annular groove formed in at least a front surface so as to dampen external force. The damping force is adjusted by varying the depth of the groove.