Abstract: A force sensor comprises a force sensor chip, and a buffering device for dampening and applying incoming external force to the force sensor chip. The buffering device comprises an input portion to which external force is input, a sensor mount for fixing the force sensor chip to the exterior, a dampening mechanism for dampening external force, and a transmission portion for transmitting the dampened external force to the active sensing portion.

Abstract: A force sensor comprises a force sensor chip, and a buffering device for dampening and applying incoming external force to the force sensor chip. The buffering device comprises an input portion to which external force is input, a sensor mount for fixing the force sensor chip to the exterior, a dampening mechanism for dampening external force, and a transmission portion for transmitting the dampened external force to the active sensing portion.

Abstract: A force sensor chip having a multiaxial force sensing function is disclosed. The force sensor chip comprises a base member having an operating part provided with an external force application area, a supporting part for supporting the operating part, connecting parts for connecting the operating part and the supporting part, and strain resistance elements disposed in the connecting parts or within boundaries between the connecting parts and the operating part. The base member has a thin area formed with a small thickness, and the boundaries of the thin area are disposed in the supporting part and operating part.

Abstract: A multi-axis sensor chip provided by the invention includes a semiconductor substrate having an action part having an external force action area part and non-deforming area parts, a support part supporting the action part, and connecting parts connecting the action part to the support part. The sensor chip also has strain resistance devices provided on deforming parts of the connecting parts and has temperature-compensating resistance devices provided on the non-deforming area parts. Temperature compensation is carried out exactly by means of the temperature-compensating resistance devices when an external force or a load acts on the action part, and highly accurate stress detection can be carried out.

Abstract: A force sensor with a force sensor chip, and a buffering device for dampening and applying incoming external force to the force sensor chip. The buffering device includes an input portion to which external force is input, a sensor mount for fixing the force sensor chip to the exterior, a dampening mechanism for dampening external force, and a transmission portion for transmitting the dampened external force to the active sensing portion.

Abstract: A force sensor including a force sensor chip and a shock absorbing device that has a damping mechanism is disclosed. The damping mechanism is disc-shaped and has an annular groove formed in at least a front surface so as to dampen external force. The damping force is adjusted by varying the depth of the groove.

Abstract: A force sensor chip having a multiaxial force sensing function is disclosed. The force sensor chip comprises a base member having an operating part provided with an external force application area, a supporting part for supporting the operating part, connecting parts for connecting the operating part and the supporting part, and strain resistance elements disposed in the connecting parts or within boundaries between the connecting parts and the operating part. The base member has a thin area formed with a small thickness, and the boundaries of the thin area are disposed in the supporting part and operating part.

Abstract: A force sensor comprises a force sensor chip, and a buffering device for dampening and applying incoming external force to the force sensor chip. The buffering device comprises an input portion to which external force is input, a sensor mount for fixing the force sensor chip to the exterior, a dampening mechanism for dampening external force, and a transmission portion for transmitting the dampened external force to the active sensing portion.

Abstract: A multi-axis sensor chip provided by the invention includes a semiconductor substrate having an action part having an external force action area part and non-deforming area parts, a support part supporting the action part, and connecting parts connecting the action part to the support part. The sensor chip also has strain resistance devices provided on deforming parts of the connecting parts and has temperature-compensating resistance devices provided on the non-deforming area parts. Temperature compensation is carried out exactly by means of the temperature-compensating resistance devices when an external force or a load acts on the action part, and highly accurate stress detection can be carried out.

Abstract: A thin plate-shaped six-axis force sensor chip comprising a semiconductor substrate formed by semiconductor film-forming processes, the sensor chip having through-holes formed therein and arranged so that the sensor chip is functionally divided by the through-holes into an action part to which an external force is applied, a support part to be fixed to an external structure, and a plurality of connecting parts each connecting together the action part and the support part and having a bridge portion of generally T-shaped configuration joined to the action part and an elastic portion joined to the support part. Each of the connecting parts has a plurality of strain resistance devices each comprising an active layer formed on at least one of front and rear faces thereof in an area thereof where deformation strain effectively occurs, the strain resistance devices being electrically connected to corresponding electrodes disposed in the support part.

Abstract: A thin plate-shaped six-axis force sensor chip comprising a semiconductor substrate formed by semiconductor film-forming processes, the sensor chip having through-holes formed therein and arranged so that the sensor chip is functionally divided by the through-holes into an action part to which an external force is applied, a support part to be fixed to an external structure, and a plurality of connecting parts each connecting together the action part and the support part and having a bridge portion of generally T-shaped configuration joined to the action part and an elastic portion joined to the support part. Each of the connecting parts has a plurality of strain resistance devices each comprising an active layer formed on at least one of front and rear faces thereof in an area thereof where deformation strain effectively occurs, the strain resistance devices being electrically connected to corresponding electrodes disposed in the support part.

Abstract: A six-axis force sensor 1 consists of a sensor chip having a six-axis force sensor function formed using a semiconductor substrate 2 and film-forming technology. Connecting parts 5A to 5D are each made up of a high-rigidity bridge part and a low-rigidity elastic part. Semiconductor strain resistance devices Sya1-Sya3, Syb1-Syb3, Sxa1-Sxa3, and Sxb1-Sxb3 consisting of active layers are disposed on the front sides of the connecting parts. The elastic parts of the connecting parts absorb excess strains acting on the connecting parts and suppress the occurrence of strain spread over the whole semiconductor substrate. Because forces and moments of six specified axis components cause strains to occur selectively in corresponding strain resistance devices, by suitably combining measured results from selected resistance devices it is possible to effectively separate an applied external force into six components of force and moment and greatly suppress other axis interference in the measured results.

Abstract: A six-axis force sensor 1 consists of a sensor chip having a six-axis force sensor function formed using a semiconductor substrate 2 and film-forming technology. Connecting parts 5A to 5D are each made up of a high-rigidity bridge part and a low-rigidity elastic part. Semiconductor strain resistance devices Sya1-Sya3, Syb1-Syb3, Sxa1-Sxa3, and Sxb1-Sxb3 consisting of active layers are disposed on the front sides of the connecting parts. The elastic parts of the connecting parts absorb excess strains acting on the connecting parts and suppress the occurrence of strain spread over the whole semiconductor substrate. Because forces and moments of six specified axis components cause strains to occur selectively in corresponding strain resistance devices, by suitably combining measured results from selected resistance devices it is possible to effectively separate an applied external force into six components of force and moment and greatly suppress other axis interference in the measured results.

Abstract: A lead-containing complex oxide containing substantially no alkali metal is produced under hydrothermal conditions in the absence of alkali metals using a Pb source which serves also as a mineralizer for precipitating the lead-containing complex oxide. Preferred Pb source acting as the mineralizer is lead oxide.

Abstract: A piezoelectric load sensor includes a plurality of upper piezoelectric elements interposed between upper and intermediate conductors and arranged in a row. A plurality of lower piezoelectric elements are interposed between lower and intermediate conductors and arranged in a row. The upper piezoelectric elements have their piezoelectric constants set so that they gradually decrease from the piezoelectric element located at one end in a direction of arrangement of the upper piezoelectric elements toward the piezoelectric element located at the other end in the direction of arrangement. The lower piezoelectric elements have their piezoelectric constants set so that they gradually increase from the piezoelectric element located at one end in a direction of arrangement of the lower piezoelectric elements toward the piezoelectric element located at the other end in the direction of arrangement.