Abstract: Solid-state imaging devices are disclosed. In one example, a solid-state imaging device includes a conversion circuit connected to a vertical signal line of a pixel array, a voltage generation circuit that outputs a predetermined voltage, and a reference voltage generation circuit that receives the predetermined voltage and outputs a reference voltage. The reference voltage generation circuit includes an operational amplifier that amplifies the predetermined voltage and outputs the reference voltage, a capacitive element having one end connected to an input of the operational amplifier that is different from an input that receives the predetermined voltage, a first switching circuit that connects the other end of the capacitive element to either the predetermined voltage output from the voltage generation circuit or a feedback loop of the operational amplifier, and a second switching circuit that selectively connects the one end of the capacitive element to the feedback loop of the operational amplifier.

Abstract: A stacking apparatus provided with a flexible conveyor plate (20), a clamp mechanism (25) for holding a sheet-shaped member carried on the conveyor plate (20) against the conveyor plate (20), and an adjustment mechanism able to adjust the degree of curvature of the conveyor plate (20). When stacking a new sheet-shaped member (1) carried on the conveyor plate (20) onto already stacked sheet-shaped members (1), the adjustment mechanism makes the conveyor plate (20) deform from a flat state to a curved state to make the new sheet-shaped member (1) carried on the conveyor plate (20) deform from a flat state to a curved state.

Abstract: The value of a first parameter is updated while a touch operation on a touch screen is continued. A first game control is executed when a first touch operation is received from a user and then a second touch operation is received after a touch operation of updating the value of the first parameter to a first value is released.

Abstract: A negative electrode material for a lithium ion secondary battery includes particles in a state in which a plurality of flat graphite particles are aggregated or bonded, and in the negative electrode material, with respect to a volume-based particle diameter measured by a laser diffraction/scattering method, a cumulative value at 9.516 ?m is 8.0% or less, a standard deviation of a particle size distribution is 0.22 or less, and a specific surface area is 3.0 m2/g or less.

Abstract: An imaging element according to a first aspect includes: a successive approximation resistor type analog-digital converter that converts an analog signal output from a pixel including a photoelectric conversion part into a digital signal, in which the successive approximation resistor type analog-digital converter has a preamplifier having a band limiting function. An imaging element according to a second aspect includes a DAC in which the successive approximation resistor type analog-digital converter uses a capacitance element to convert a digital value after AD conversion to an analog value, and sets the analog value to a comparison reference for comparison with an analog input voltage.

Abstract: Changing the analog gain for each of columns while suppressing an expansion of area and an increase in power consumption. A solid-state imaging apparatus (1, 1A) according to an embodiment includes: converters (10A to 10D) connected to a vertical signal line (VSL) extending from a pixel array unit (30); a voltage generator (20) that is connected to a plurality of voltage lines and outputs reference voltages having mutually different voltage values individually to the plurality of voltage lines; wiring lines (L10 to L31, L20 to L23) connecting the converter and the plurality of voltage lines; and switches (SW0 to SW3) provided on the wiring line and configured to perform changeover of the voltage lines connected to the converter to one of the plurality of voltage lines.

Abstract: A photodetection device according to the present disclosure includes: a first pixel that is configured to generate a first pixel signal; a reference signal generator that is configured to generate a reference signal; and a first comparator including a first power supply circuit and a first comparison circuit, the first power supply circuit configured to generate a first power supply voltage on the basis of a power supply voltage supplied from a first power supply node and a bias voltage and configured to output the first power supply voltage from an output terminal, and the first comparison circuit configured to operate on the basis of the first power supply voltage and configured to perform a comparison operation on the basis of the first pixel signal and the reference signal.

Abstract: A game program for getting a computer to execute such a routine that playing characters battle each other in a three dimensional virtual space so as to obtain battle points, the obtained battle points are collected as total values, and the total values are ranked, the playing character belonging to one of two or more groups, each group being divided into two or more teams . The game program for getting the computer to execute a routine of dividing the playing characters into specific teams within the group, a routine of storing data showing to which team the playing character belongs; a routine of battling between the teams of the different groups; a routine of totalizing and storing the battle points obtained by the respective playing characters in the battle for every team; a routine of totalizing the battle point every group for all teams and storing the results, respectively giving a ranking; and a routine of outputting the ranking.

Abstract: An image sensor including a pixel array section in which a plurality of pixels including photoelectric conversion units is disposed, and a comparator that compares an analog pixel signal output from the pixels to a predetermined reference signal, and outputs a comparison result according to a signal level of the pixel signal. The comparator includes differential pair transistors, a first load transistor connected in series with a first transistor of the differential pair, and a second load transistor connected in series with a second transistor of the differential pair. The first transistor of the differential pair accepts a signal obtained by combining the pixel signal and the predetermined reference signal as a gate input, the second transistor of the differential pair accepts a predetermined voltage as a gate input.

Abstract: An image sensor including a pixel array section in which a plurality of pixels including photoelectric conversion units is disposed, and a comparator that compares an analog pixel signal output from the pixels to a predetermined reference signal, and outputs a comparison result according to a signal level of the pixel signal. The comparator includes differential pair transistors, a first load transistor connected in series with a first transistor of the differential pair, and a second load transistor connected in series with a second transistor of the differential pair. The first transistor of the differential pair accepts a signal obtained by combining the pixel signal and the predetermined reference signal as a gate input, the second transistor of the differential pair accepts a predetermined voltage as a gate input.

Abstract: An A/D converter and electronic equipment are disclosed. In one example, an A/D converter includes a comparator circuit and a first transistor. The comparator circuit compares a threshold voltage (Vth) to a pixel signal (SVSL). The first transistor has a control terminal and forms a clamp circuit, and receives an input of a result of the comparison. When the clamp circuit is turned on (closed), the first transistor equalizes currents flowing to a first predetermined position and a second predetermined position or equalizes voltages at the first predetermined position and the second predetermined position, the first predetermined position and the second predetermined position being connected to each other at the time of clamping. This makes it possible to suppress occurrence of streaking in a case where an excessive input is applied to a pixel signal line side.

Abstract: It makes it easier to reduce the line capacitance of vertical signal lines in a solid-state image sensor in which signals are output via the vertical signal lines. The solid-state image sensor is provided with a logic circuit, a pixel circuit, and a negative capacitance circuit. In the solid-state image sensor, the logic circuit processes an analog signal. Also, in the solid-state image sensor, the pixel circuit generates an analog signal by photoelectric conversion, and outputs the analog signal to the logic circuit via a predetermined signal line. In the solid-state image sensor, the negative capacitance circuit is connected to the predetermined signal line.

Abstract: It makes it easier to reduce the line capacitance of vertical signal lines in a solid-state image sensor in which signals are output via the vertical signal lines. The solid-state image sensor is provided with a logic circuit, a pixel circuit, and a negative capacitance circuit. In the solid-state image sensor, the logic circuit processes an analog signal. Also, in the solid-state image sensor, the pixel circuit generates an analog signal by photoelectric conversion, and outputs the analog signal to the logic circuit via a predetermined signal line. In the solid-state image sensor, the negative capacitance circuit is connected to the predetermined signal line.

Abstract: Changing the analog gain for each of columns while suppressing an expansion of area and an increase in power consumption. A solid-state imaging apparatus (1, 1A) according to an embodiment includes: converters (10A to 10D) connected to a vertical signal line (VSL) extending from a pixel array unit (30); a voltage generator (20) that is connected to a plurality of voltage lines and outputs reference voltages having mutually different voltage values individually to the plurality of voltage lines; wiring lines (L10 to L31, L20 to L23) connecting the converter and the plurality of voltage lines; and switches (SW0 to SW3) provided on the wiring line and configured to perform changeover of the voltage lines connected to the converter to one of the plurality of voltage lines.

Abstract: A method for manufacturing an all-solid-state battery includes a battery unit producing step, a flattening step, and a stacking step. In the battery unit producing step, a battery unit having a plate shape is produced through a pressing step in which a laminate including at least one each of a positive electrode active material layer, a solid electrolyte layer, and a negative electrode active material layer is pressed in a thickness direction of the laminate with a first pressure. In the flattening step, the battery unit is flattened by pressing the produced battery unit in the thickness direction with a second pressure equal to or lower than the first pressure while heating the battery unit to a temperature equal to or higher than a temperature at which the battery unit softens and is deformed. In the stacking step, a plurality of the flattened battery units are stacked.

Abstract: A stacking apparatus provided with a flexible conveyor plate (20), a clamp mechanism (25) for holding a sheet-shaped member carried on the conveyor plate (20) against the conveyor plate (20), and an adjustment mechanism able to adjust the degree of curvature of the conveyor plate (20). When stacking a new sheet-shaped member (1) carried on the conveyor plate (20) onto already stacked sheet-shaped members (1), the adjustment mechanism makes the conveyor plate (20) deform from a flat state to a curved state to make the new sheet-shaped member (1) carried on the conveyor plate (20) deform from a flat state to a curved state.

Abstract: There is provided an imaging device that includes a pixel, the pixel comprising: a photodetector; a control transistor; a capacitor coupled to the photodetector; a reset transistor coupled between the control transistor and the capacitor; an amplifier transistor having a gate terminal coupled to the capacitor; and a select transistor coupled to the amplifier transistor; a first signal line coupled to the select transistor; and a first amplifying circuit including a first input terminal coupled to the first signal line and a second input terminal configured to receive a first reference signal and an output terminal coupled to the control transistor.

Abstract: An imaging element according to a first aspect includes: a successive approximation resistor type analog-digital converter that converts an analog signal output from a pixel including a photoelectric conversion part into a digital signal, in which the successive approximation resistor type analog-digital converter has a preamplifier having a band limiting function. An imaging element according to a second aspect includes a DAC in which the successive approximation resistor type analog-digital converter uses a capacitance element to convert a digital value after AD conversion to an analog value, and sets the analog value to a comparison reference for comparison with an analog input voltage.

Abstract: An imaging element comprises a photoelectric conversion unit formed in a pixel region and configured to convert light into electrical charge. Further, the imaging element includes a transistor formed in the pixel region and configured to transfer electric charge from the photoelectric conversion unit. The photoelectric conversion unit of the imaging element may be connected to a well of the pixel region, where the well of the pixel region has a negative potential.

Abstract: A bridge device (120-1) which can effectively reduce the waste of the band resource in the upstream bus connected to a management device is realized by including: a first input/output port (221); a second input/output port (222); a group information keeping unit (228) to keep a group identifier and a correspondence between one or more terminal devices and the group identifier, the group identifier identifying a group that includes one or more terminal devices to be connected to the second input/output port (222), the one or more terminal devices belonging to the group; an extended-request processing unit (224) to generate, when an extended-request frame including destination information corresponding to the group identifier for requesting state information of the one or more terminal devices belonging to the group is inputted to the first input/output port (221), a request frame to be outputted from the second input/output port (222) to each of the one or more terminal devices belonging to the group, on the b