Abstract: It makes it easier to reduce the line capacitance of vertical signal lines in a solid-state image sensor in which signals are output via the vertical signal lines. The solid-state image sensor is provided with a logic circuit, a pixel circuit, and a negative capacitance circuit. In the solid-state image sensor, the logic circuit processes an analog signal. Also, in the solid-state image sensor, the pixel circuit generates an analog signal by photoelectric conversion, and outputs the analog signal to the logic circuit via a predetermined signal line. In the solid-state image sensor, the negative capacitance circuit is connected to the predetermined signal line.

Abstract: Changing the analog gain for each of columns while suppressing an expansion of area and an increase in power consumption. A solid-state imaging apparatus (1, 1A) according to an embodiment includes: converters (10A to 10D) connected to a vertical signal line (VSL) extending from a pixel array unit (30); a voltage generator (20) that is connected to a plurality of voltage lines and outputs reference voltages having mutually different voltage values individually to the plurality of voltage lines; wiring lines (L10 to L31, L20 to L23) connecting the converter and the plurality of voltage lines; and switches (SW0 to SW3) provided on the wiring line and configured to perform changeover of the voltage lines connected to the converter to one of the plurality of voltage lines.

Abstract: A method for manufacturing an all-solid-state battery includes a battery unit producing step, a flattening step, and a stacking step. In the battery unit producing step, a battery unit having a plate shape is produced through a pressing step in which a laminate including at least one each of a positive electrode active material layer, a solid electrolyte layer, and a negative electrode active material layer is pressed in a thickness direction of the laminate with a first pressure. In the flattening step, the battery unit is flattened by pressing the produced battery unit in the thickness direction with a second pressure equal to or lower than the first pressure while heating the battery unit to a temperature equal to or higher than a temperature at which the battery unit softens and is deformed. In the stacking step, a plurality of the flattened battery units are stacked.

Abstract: A stacking apparatus provided with a flexible conveyor plate (20), a clamp mechanism (25) for holding a sheet-shaped member carried on the conveyor plate (20) against the conveyor plate (20), and an adjustment mechanism able to adjust the degree of curvature of the conveyor plate (20). When stacking a new sheet-shaped member (1) carried on the conveyor plate (20) onto already stacked sheet-shaped members (1), the adjustment mechanism makes the conveyor plate (20) deform from a flat state to a curved state to make the new sheet-shaped member (1) carried on the conveyor plate (20) deform from a flat state to a curved state.

Abstract: There is provided an imaging device that includes a pixel, the pixel comprising: a photodetector; a control transistor; a capacitor coupled to the photodetector; a reset transistor coupled between the control transistor and the capacitor; an amplifier transistor having a gate terminal coupled to the capacitor; and a select transistor coupled to the amplifier transistor; a first signal line coupled to the select transistor; and a first amplifying circuit including a first input terminal coupled to the first signal line and a second input terminal configured to receive a first reference signal and an output terminal coupled to the control transistor.

Abstract: An imaging element according to a first aspect includes: a successive approximation resistor type analog-digital converter that converts an analog signal output from a pixel including a photoelectric conversion part into a digital signal, in which the successive approximation resistor type analog-digital converter has a preamplifier having a band limiting function. An imaging element according to a second aspect includes a DAC in which the successive approximation resistor type analog-digital converter uses a capacitance element to convert a digital value after AD conversion to an analog value, and sets the analog value to a comparison reference for comparison with an analog input voltage.

Abstract: An imaging element comprises a photoelectric conversion unit formed in a pixel region and configured to convert light into electrical charge. Further, the imaging element includes a transistor formed in the pixel region and configured to transfer electric charge from the photoelectric conversion unit. The photoelectric conversion unit of the imaging element may be connected to a well of the pixel region, where the well of the pixel region has a negative potential.

Abstract: A bridge device (120-1) which can effectively reduce the waste of the band resource in the upstream bus connected to a management device is realized by including: a first input/output port (221); a second input/output port (222); a group information keeping unit (228) to keep a group identifier and a correspondence between one or more terminal devices and the group identifier, the group identifier identifying a group that includes one or more terminal devices to be connected to the second input/output port (222), the one or more terminal devices belonging to the group; an extended-request processing unit (224) to generate, when an extended-request frame including destination information corresponding to the group identifier for requesting state information of the one or more terminal devices belonging to the group is inputted to the first input/output port (221), a request frame to be outputted from the second input/output port (222) to each of the one or more terminal devices belonging to the group, on the b

Abstract: It makes it easier to reduce the line capacitance of vertical signal lines in a solid-state image sensor in which signals are output via the vertical signal lines. The solid-state image sensor is provided with a logic circuit, a pixel circuit, and a negative capacitance circuit. In the solid-state image sensor, the logic circuit processes an analog signal. Also, in the solid-state image sensor, the pixel circuit generates an analog signal by photoelectric conversion, and outputs the analog signal to the logic circuit via a predetermined signal line. In the solid-state image sensor, the negative capacitance circuit is connected to the predetermined signal line.

Abstract: An imaging element comprises a photoelectric conversion unit formed in a pixel region and configured to convert light into electrical charge. Further, the imaging element includes a transistor formed in the pixel region and configured to transfer electric charge from the photoelectric conversion unit. The photoelectric conversion unit of the imaging element may be connected to a well of the pixel region, where the well of the pixel region has a negative potential.

Abstract: A bridge device (120-1) which can effectively reduce the waste of the band resource in the upstream bus connected to a management device is realized by including: a first input/output port (221); a second input/output port (222); a group information keeping unit (228) to keep a group identifier and a correspondence between one or more terminal devices and the group identifier, the group identifier identifying a group that includes one or more terminal devices to be connected to the second input/output port (222), the one or more terminal devices belonging to the group; an extended-request processing unit (224) to generate, when an extended-request frame including destination information corresponding to the group identifier for requesting state information of the one or more terminal devices belonging to the group is inputted to the first input/output port (221), a request frame to be outputted from the second input/output port (222) to each of the one or more terminal devices belonging to the group, on the b

Abstract: An imaging element comprises a photoelectric conversion unit formed in a pixel region and configured to convert light into electrical charge. Further, the imaging element includes a transistor formed in the pixel region and configured to transfer electric charge from the photoelectric conversion unit. The photoelectric conversion unit of the imaging element may be connected to a well of the pixel region, where the well of the pixel region has a negative potential.

Abstract: There is provided an imaging device that includes a pixel, the pixel comprising: a photodetector; a control transistor; a capacitor coupled to the photodetector; a reset transistor coupled between the control transistor and the capacitor; an amplifier transistor having a gate terminal coupled to the capacitor; and a select transistor coupled to the amplifier transistor; a first signal line coupled to the select transistor; and a first amplifying circuit including a first input terminal coupled to the first signal line and a second input terminal configured to receive a first reference signal and an output terminal coupled to the control transistor.

Abstract: The present disclosure relates to a solid-state imaging device, an AD converter, and an electronic apparatus that improve a crosstalk characteristic. The AD converter includes a comparator that compares the pixel signal with the reference signal, a pixel signal side capacitor, and a reference signal side capacitor. The pixel signal side capacitor and the reference signal side capacitor are formed such that a first parasitic capacity and a second parasitic capacity are substantially the same. The present technology is applicable to a CMOS image sensor, for example.

Abstract: To reduce fluctuations in image signals when the voltage of a negative power supply supplied to pixels changes. A pixel operates based on a first ground potential applied to a first ground line and outputs an analog image signal according to emitted light. An analog-digital converter operates based on a second ground potential applied to a second ground line, the second ground potential higher than the first ground potential, and converts the analog image signal into a digital image signal based on a reference voltage as a standard for the conversion. A reference voltage generation unit operates based on the second ground potential and generates the reference voltage. A reference voltage correction unit corrects the reference voltage generated according to a change in the first ground potential and supplies the reference voltage to the analog-digital converter.

Abstract: To reduce fluctuations in image signals when the voltage of a negative power supply supplied to pixels changes. A pixel operates based on a first ground potential applied to a first ground line and outputs an analog image signal according to emitted light. An analog-digital converter operates based on a second ground potential applied to a second ground line, the second ground potential higher than the first ground potential, and converts the analog image signal into a digital image signal based on a reference voltage as a standard for the conversion. A reference voltage generation unit operates based on the second ground potential and generates the reference voltage. A reference voltage correction unit corrects the reference voltage generated according to a change in the first ground potential and supplies the reference voltage to the analog-digital converter.

Abstract: The present disclosure relates to a solid-state imaging device, an AD converter, and an electronic apparatus that improve a crosstalk characteristic. The AD converter includes a comparator that compares the pixel signal with the reference signal, a pixel signal side capacitor, and a reference signal side capacitor. The pixel signal side capacitor and the reference signal side capacitor are formed such that a first parasitic capacity, and a second parasitic capacity are substantially the same. The present technology is applicable to a CMOS image sensor, for example.

Abstract: An imaging element comprises a photoelectric conversion unit formed in a pixel region and configured to convert light into electrical charge. Further, the imaging element includes a transistor formed in the pixel region and configured to transfer electric charge from the photoelectric conversion unit. The photoelectric conversion unit of the imaging element may be connected to a well of the pixel region, where the well of the pixel region has a negative potential.

Abstract: The present disclosure relates to a solid-state imaging device, an AD converter, and an electronic apparatus that improve a crosstalk characteristic. The AD converter includes a comparator that compares the pixel signal with the reference signal, a pixel signal side capacitor, and a reference signal side capacitor. The pixel signal side capacitor and the reference signal side capacitor are formed such that a first parasitic capacity, and a second parasitic capacity are substantially the same. The present technology is applicable to a CMOS image sensor, for example.

Abstract: An imaging element comprises a photoelectric conversion unit formed in a pixel region and configured to convert light into electrical charge. Further, the imaging element includes a transistor formed in the pixel region and configured to transfer electric charge from the photoelectric conversion unit. The photoelectric conversion unit of the imaging element may be connected to a well of the pixel region, where the well of the pixel region has a negative potential.