Patents by Inventor Yusuke Jono

Yusuke Jono has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6584015
    Abstract: A semiconductor storage device that determines the cause of an error at the time of the error correction of data read out from a non-volatile semiconductor memory, on the basis of a previously recorded error correction count, and selects a data refresh processing or a substitute processing to perform. When the error is detected, the corrected data is rewritten back for preventing reoccurrence of error due to accidental cause. If it is determined that the reoccurrence frequency of the error is high and the error is due to degradation of the storage medium, based on the error correction count, the substitute processing is performed.
    Type: Grant
    Filed: September 19, 2002
    Date of Patent: June 24, 2003
    Assignee: Hitachi, Ltd.
    Inventors: Kunihiro Katayama, Takayuki Tamura, Yusuke Jono, Motoki Kanamori, Atsushi Shikata
  • Publication number: 20030021151
    Abstract: In the conventional nonvolatile memory, it is not possible to determine the cause of the error is accidental or due to the degradation when the error is detect at the time of data read. Therefore, unnecessary substitute processing is performed, resulting in the exhaustion of the substitute area to shorten the life of the storage device.
    Type: Application
    Filed: September 19, 2002
    Publication date: January 30, 2003
    Inventors: Kunihiro Katayama, Takayuki Tamura, Yusuke Jono, Motoki Kanamori, Atsushi Shikata
  • Patent number: 6480416
    Abstract: A semiconductor storage device that determines the cause of an error at the time of the error correction of data read out from a non-volatile semiconductor memory, on the basis of a previously recorded error correction count, and selects a data refresh processing or a substitute processing to perform. When the error is detected, the corrected data is rewritten back for preventing reoccurrence of error due to accidental cause. If it is determined that the reoccurrence frequency of the error is high and the error is due to degradation of the storage medium, based on the error correction count, the substitute processing is performed.
    Type: Grant
    Filed: December 18, 2001
    Date of Patent: November 12, 2002
    Assignee: Hitachi, Ltd.
    Inventors: Kunihiro Katayama, Takayuki Tamura, Yusuke Jono, Motoki Kanamori, Atsushi Shikata
  • Publication number: 20020080650
    Abstract: In the conventional nonvolatile memory, it is not possible to determine the cause of the error is accidental or due to the degradation when the error is detect at the time of data read. Therefore, unnecessary substitute processing is performed, resulting in the exhaustion of the substitute area to shorten the life of the storage device.
    Type: Application
    Filed: December 18, 2001
    Publication date: June 27, 2002
    Inventors: Kunihiro Katayama, Takayuki Tamura, Yusuke Jono, Motoki Kanamori, Atsushi Shikata
  • Patent number: 6339546
    Abstract: A semiconductor storage device that determines the cause of an error at the time of the error correction of data read out from a non-volatile semiconductor memory, on the basis of a previously recorded error correction count, and selects a data refresh processing or a substitute processing to perform. When the error is detected, the corrected data is rewritten back for preventing reoccurrence of error due to accidental cause. If it is determined that the reoccurrence frequency of the error is high and the error is due to degradation of the storage medium, based on the error correction count, the substitute processing is performed.
    Type: Grant
    Filed: September 15, 2000
    Date of Patent: January 15, 2002
    Assignee: Hitachi, Ltd.
    Inventors: Kunihiro Katayama, Takayuki Tamura, Yusuke Jono, Motoki Kanamori, Atsushi Shikata