Abstract: Provided is a semiconductor device manufacturing method in which the numbers of photolithography and anisotropic dry etching processes are reduced to simplify the manufacturing steps; and it is avoided that the presence of an etching stopper film complicates the manufacturing steps in a region where no capacitor is formed, and also causes malfunction in a contact plug. Specifically, an anisotropic dry etching using a resist mask (RM2) is performed to form an opening (OP3) extending through at least an interlayer insulating film (5). Even after an etching stopper film (4) is exposed to the bottom part of the opening (OP3), the anisotropic dry etching is continued, using the etching stopper film (4) as etching mask, in order to form a contact hole (CH1) extending through an interlayer insulating film (3) to source/drain regions (11, 13). Therefore, the opening (OP3) and contact hole (CH1) are obtainable at a time in the same etching step.

Abstract: A semiconductor device has: a semiconductor substrate as a base layer having a main surface; a plurality of wiring swellings formed so as to be linearly swollen on the main surface; and a plurality of plugs made of a conductive material formed so as to bury a part of a recess formed by being sandwiched by wiring swellings. Wiring swelling includes a wiring layer, an on-wiring stopper film as a wiring layer top face protective layer formed so as to cover the top face of wiring layer, and a side wall spacer covering a side face of wiring layer and a side face of on-wiring stopper film. The level of the top face of wiring swelling and that of the top face of plug are almost the same with respect to the main surface as a reference.