Abstract: A method for producing a halide includes heat-treating a mixed material in an inert gas atmosphere, the mixed material being a mixture of M2O3, NH4X, and LiZ. The M includes at least one element selected from the group consisting of Y, a lanthanoid, and Sc. The X is at least one element selected from the group consisting of CI, Br, I, and F. The Z is at least one element selected from the group consisting of CI, Br, I, and F.

Abstract: A method for producing a heat transfer sheet, includes: (A1) forming a mixture including at least one of a carbon fiber and a boron nitride flake, an inorganic filler, and a binder resin into a molded body in which the at least one of the carbon fiber and the boron nitride flake is oriented in a thickness direction of the molded body; (B1) slicing the molded body into a sheet shape to obtain a molded sheet; (C1) pressing the molded sheet; and (D1), after the pressing, inserting the molded sheet between films and performing a vacuum packing of the molded sheet with the films such that an uncured component of the binder resin present inside the molded sheet is exuded to a surface of the molded sheet, which is the heat transfer sheet.

Abstract: A thermally-conductive sheet includes: a binder; and an anisotropic thermally-conductive filler. The anisotropic thermally-conductive filler is oriented in a thickness direction of the thermally-conductive sheet An arithmetical mean height Sa is 5 ?m or less and a maximum height Sz is 50 ?m or less on either surface of the thermally-conductive sheet. A dielectric breakdown voltage of the thermally-conductive sheet is 0.5 kV/mm or higher.

Abstract: A thermally conductive sheet includes a binder resin and boron nitride flakes. The boron nitride flakes are oriented in a thickness direction of the thermally conductive sheet, and both surfaces of the thermally conductive sheet are tacky. A method for manufacturing a thermally conductive sheet includes preparing a thermally conductive composition containing a binder resin and boron nitride flakes. A molded block is formed from the thermally conductive composition. The molded block is sliced into a sheet shape to obtain a thermally conductive sheet precursor. The thermally conductive sheet precursor is pressed to obtain a thermally conductive sheet.

Abstract: Provided is a semiconductor device having excellent heat dissipation capacity and electromagnetic wave suppression effect. A semiconductor device 1 includes a semiconductor element 30; a conductive cooling member 40 provided above the semiconductor element 30, a conductive thermally conductive member 10 that is provided between the semiconductor element 30 and the cooling member 40 and contains a cured resin. The conductive thermally conductive member 10 is connected to a ground 60 in the substrate 50 to electrically connect the cooling member 40 and the ground 60.

Abstract: An apparatus for producing a glass preform is an apparatus by pulling up a starting rod while the starting rod is rotated around an axis and glass fine particles generated by a burner are deposited in an axial direction of the starting rod. The apparatus for producing a glass preform includes an imaging device that acquires a deposition surface image by imaging a deposition surface of a glass fine particle deposit deposited on the starting rod, and an image processing unit that detects an edge shape of the deposition surface from the deposition surface image acquired using the imaging device to judge quality of the glass fine particle deposit by quantifying a degree of deformation of the edge shape.

Abstract: Provided is a thermally conductive sheet which is highly flexible and of which the thermal resistance value has small load dependency. A thermally conductive sheet 1 contains a curable resin composition 2, a flaky thermally conductive filler 3, and a non-flaky thermally conductive filler 4, wherein the amount of change between the thermal resistance value at load of 1 kgf/cm2 and the thermal resistance value at load in a range greater than 1 kgf/cm2 and not greater than 3 kgf/cm2 is not greater than 0.4° C.·cm2/W, and the amount of change between the compression rate at load of 3 kgf/cm2 and the compression rate at load of 1 kgf/cm2 is not less than 20%.

Abstract: A thermally conductive sheet includes: a binder resin; and a first thermally conductive filler oriented in a thickness direction of the thermally conductive sheet. The thermally conductive sheet has a contact thermal resistance with regard to an adherend of 0.46° C.·cm2/W or less. The first thermally conductive filler is preferably a fibrous thermally conductive filler and/or a flaky thermally conductive filler. The thermally conductive sheet preferably further includes a second thermally conductive filler which is at least one selected from a group consisting of alumina, aluminum, zinc oxide, boron nitride, aluminum nitride, graphite, and a magnetic powder.

Abstract: A thermally conductive sheet having a binder resin, a first thermally conductive filler, and a second thermally conductive filler, wherein the first thermally conductive filler and the second thermally conductive filler are dispersed in the binder resin, and the specific permittivity and the thermal conductivity are different in the thickness direction B and the surface direction A of the thermally conductive sheet. A thermally conductive sheet includes step A of preparing a resin composition for forming a thermally conductive sheet by dispersing a first thermally conductive filler and a second thermally conductive filler in a binder resin, step B of forming a molded block from the resin composition for forming a thermally conductive sheet, and step C of slicing the molded block into a sheet and obtaining a thermally conductive sheet having different relative permittivity and thermal conductivity in the thickness direction and the surface direction.

Abstract: A semiconductor device includes a semiconductor layer, a first conductor disposed on the semiconductor layer, a second conductor disposed on the semiconductor layer so as to be separated from the first conductor, a relay portion that is formed on the semiconductor layer so as to straddle the first conductor and the second conductor and that is made of a semiconductor having a first conductivity type region and a second conductivity type region, a first contact by which the first conductivity type region and the second conductivity type region are electrically connected to the first conductor, and a second contact that electrically connects the first conductivity type region of the relay portion and the second conductor together and that is insulated from the second conductivity type region.

Abstract: A semiconductor device includes: a semiconductor substrate including a main surface and a back surface opposite to the main surface; a semiconductor layer including a first surface in contact with the main surface of the semiconductor substrate and a second surface opposite to the first surface, and including a gate trench recessed in the second surface; a split gate structure provided in the gate trench; an insulating layer filling the gate trench and covering the second surface of the semiconductor layer; and a trap level region formed in any one of the semiconductor layer and the semiconductor substrate to trap carriers moving from the semiconductor layer.

Abstract: A semiconductor device includes a semiconductor layer, a first conductor disposed on the semiconductor layer, a second conductor disposed on the semiconductor layer so as to be separated from the first conductor, a relay portion that is formed on the semiconductor layer so as to straddle the first conductor and the second conductor and that is made of a semiconductor having a first conductivity type region and a second conductivity type region, a first contact by which the first conductivity type region and the second conductivity type region are electrically connected to the first conductor, and a second contact that electrically connects the first conductivity type region of the relay portion and the second conductor together and that is insulated from the second conductivity type region.

Abstract: A semiconductor device includes a semiconductor layer having a first surface and a second surface, an element structure formed on the first surface side of the semiconductor layer and including a first conductivity type first region and a second conductivity type second region in contact with the first region, a gate electrode opposing the second region with a gate insulating film therebetween, a first conductivity type third region formed in the semiconductor layer to be in contact with the second region, and a first electrode formed on the semiconductor layer and electrically connected to the first region and the second region, in which the element structure includes a first and a second element structure, the first element structure is separated from the second region in a direction along the first surface of the semiconductor layer, and includes a second conductivity type first column layer extending in a thickness direction.

Abstract: A method for producing a thermally conductive sheet, includes forming a molded body sheet having thermal conductivity and comprising a fibrous thermally conductive filler. A silicone resin film is formed by applying a silicone resin to a supporting body. At least one surface of the molded body sheet is directly affixed to a silicone resin side of the silicone resin film. The silicone resin is transferred to the at least one surface of the molded body sheet to form a silicone resin layer on the molded body sheet. The silicone resin layer is to be attached to a heat source or a heat dissipating member. The molded body sheet has a change in thermal resistance due to the transferring of the silicone resin of 0.5° C.·cm2/W or less.

Abstract: A thermally conductive sheet having a binder resin, a first thermally conductive filler, and a second thermally conductive filler, wherein the first thermally conductive filler and the second thermally conductive filler are dispersed in the binder resin, and the specific permittivity and the thermal conductivity are different in the thickness direction B and the surface direction A of the thermally conductive sheet. A thermally conductive sheet includes step A of preparing a resin composition for forming a thermally conductive sheet by dispersing a first thermally conductive filler and a second thermally conductive filler in a binder resin, step B of forming a molded block from the resin composition for forming a thermally conductive sheet, and step C of slicing the molded block into a sheet and obtaining a thermally conductive sheet having different relative permittivity and thermal conductivity in the thickness direction and the surface direction.

Abstract: A thermal conductive sheet includes a cured product of a resin composition containing carbon fiber, an inorganic filler other than carbon fiber, and binder resin. The tack force of the sheet surface is 100 gf or greater, determined when the sheet between release films is subjected to press processing at 0.5 MPa for 30 sec, and after the films are peeled off, is indented by 50 ?m at 2 mm/second with a probe 5.1 mm in diameter and the probe is pulled away at 10 mm/sec. Additionally, (B/A)×100?80% is true, where A denotes the tack force of the sheet surface after the films are peeled off subsequent to press processing; and B denotes the tack force of the sheet surface when the sheet is indented by 50 ?m at 2 mm/second with a probe 5.1 mm in diameter and the probe is pulled away at 10 mm/second after exposure to atmosphere for 1 hour subsequent to press processing.

Abstract: The disclosure aims at providing an antenna array for 5G communications that has superior thermal dissipation and crosstalk suppression effect. To achieve the above-described object, an antenna array 1 for 5G communications according to the disclosure includes a substrate 10; at least one high-frequency semiconductor device 20, a noise-suppressing thermally conductive sheet 20, and a first thermal dissipation member 41 sequentially formed on one surface 10a of the substrate 10; and at least one antenna 50 and a second thermal dissipation member 42 sequentially formed on the other surface 10b of the substrate 10.

Abstract: Provided is a semiconductor device having excellent heat dissipation capacity and electromagnetic wave suppression effect. A semiconductor device 1 includes a semiconductor device 30; a tubular conductive shield can 20 provided to surround a side surface 30a of the semiconductor device 30; a conductive cooling member 40; and a conductive thermally conductive sheet 10 formed between the semiconductor device 30 and the cooling member 40. The conductive shield can 20 and the cooling member 40 are electrically connected through the conductive thermally conductive sheet 10 therebetween.

Abstract: Provided is an electronic device capable of simultaneously achieving heat dissipation, electromagnetic wave suppression effect and ESD protection at a high level.

Abstract: A thermally conductive sheet includes a sheet body and an adhesive layer. The sheet body is obtained by curing a thermally conductive resin composition. The thermally conductive resin composition includes a polymer matrix component and a fibrous thermally conductive filler. The adhesive layer is formed on at least one surface of the sheet body and imparts tackiness to the at least one surface of the sheet body. A volume of the adhesive layer is 0.0002 cm3 or more and 0.001 cm3 or less per 1 cm2 of the sheet body.