Abstract: A semiconductor device includes a semiconductor layer, having a drain region, a body region, and a source region, a gate electrode, facing the body region via a gate insulating film, a first pillar layer disposed inside the semiconductor layer so as to be continuous to the body region, and a trap level region, disposed inside the semiconductor layer and containing charged particles that form a trap level, and an electric field concentration portion, where an electric field concentrates in an off state in which a channel is not formed in the body region, and the trap level region are disposed at mutually different depth positions in a depth direction of the first pillar layer.

Abstract: A semiconductor device that includes: a semiconductor layer of a first conductivity type, having a peripheral area and a cell area inside of the peripheral area; a region of a second conductivity type in the semiconductor layer in the cell area; and a plurality of guard rings of the second conductivity type in the semiconductor layer in the peripheral area, each having a substantially same depth as the region of the second conductivity type in the cell area. The plurality of guard rings include at least one first ring that has a diffusion region in the depth profile in the semiconductor layer that is wider at a top thereof.

Abstract: A semiconductor device includes a conductivity type drain layer, a conductivity type drift layer, conductivity type base regions located in an upper surface of the drift layer, a conductivity type source region which is disposed inside each of the base regions and is spaced apart from the periphery of the base region, and a channel region is formed between the source region and the periphery of the base region. The semiconductor device further includes a gate insulating layer covering the channel region, a gate electrode which is located on the gate insulating layer and faces the channel region, a plurality of conductivity type column regions, each extends from the plurality of base regions to the drain layer in the drift layer, a trap level forming region in the drift layer, a drain electrode electrically connected to the drain layer, and a source electrode electrically connected to the source region.

Abstract: A semiconductor device that includes: a semiconductor layer of a first conductivity type, having a peripheral area and a cell area inside of the peripheral area; a region of a second conductivity type in the semiconductor layer in the cell area; and a plurality of guard rings of the second conductivity type in the semiconductor layer in the peripheral area, each having a substantially same depth as the region of the second conductivity type in the cell area. The plurality of guard rings include at least one first ring that has a diffusion region in the depth profile in the semiconductor layer that is wider at a top thereof.

Abstract: Provided is a coil module which is reduced in size and made slimmer by incorporating a material and structure resistant to magnetic saturation. The coil module has: a magnetic resin layer containing magnetic particles; and a spiral coil, wherein the magnetic resin layer contains magnetic particles having a spherical shape or a spheroid shape having a dimensional ratio of not more than 6, the dimensional ratio being expressed as a ratio of the major diameter to the minor diameter.

Abstract: A coil module is provided which has been reduced in size and thickness by incorporating a material and a structure resistant to magnetic saturation. The coil module includes a magnetic shielding layer containing a magnetic material, and a spiral coil. The magnetic shielding layer has a plurality of magnetic resin layers containing magnetic particles, and at least a portion of the spiral coil is buried in a portion of the magnetic resin layers. This allows a reduction in size and thickness while achieving a heat dissipation effect by the magnetic resin layers. In addition, since magnetic resin layers resistant to magnetic saturation are provided, the coil inductance changes only slightly even in an environment where a strong magnetic field is applied, and thus stable communication can be provided.

Abstract: An invented antenna device includes a spiral coil having terminal wires extending from an inner periphery side thereof and from an outer periphery side thereof, a magnetic layer supporting the spiral coil and being formed with a cutoff portion extending from an inner periphery side thereof to an outer periphery side thereof, and a circuit board having a pair of terminal portions for connecting to the terminal wire and a connecting terminal for connecting an external circuit. The circuit board is placed in the cutoff portion, and the terminal wire extending from the inner periphery side of the spiral coil is coupled to the terminal portion located on an inner periphery side of the circuit board whereas the terminal wire extending from the outer periphery side of the spiral coil is coupled to the terminal portion located on an outer periphery side of the circuit board.

Abstract: An antenna device according to the invention includes a spiral coil, a magnetic layer supporting the spiral coil and including a recess or a through hole for containing an extension from an inner periphery of the spiral coil, and a circuit board having a plurality of conducting patterns and being formed with a first terminal connecting the spiral coil to the conducting patterns and with a second terminal connecting the conducting patterns to an external circuit. The magnetic layer has at least a part of the circuit board inside. This invented antenna device is formed in a thinner size.

Abstract: A composition for electromagnetic wave suppression and heat radiation includes: a matrix composed of a high molecular material or a low molecular material; and a magnetic particle filled in the matrix upon mixing a magnetic powder having a relation of {(tap density)/density}?0.58 with the matrix.

Abstract: A composition for electromagnetic wave suppression and heat radiation includes: a matrix composed of a high molecular material or a low molecular material; and a magnetic particle filled in the matrix upon mixing a magnetic powder having a relation of {(tap density)/density}?0.58 with the matrix.