Abstract: An information providing device according to one aspect of the present disclosure includes: at least one memory storing a set of instructions; and at least one processor configured to execute the set of instructions to: receive a face image; determine whether a person in the face image is unsuitable for iris data acquisition based on the face image; and output information based on determining that the person is unsuitable for the iris data acquisition when the person is determined to be unsuitable for the iris data acquisition.

Abstract: A method of manufacturing a group-III nitride crystal includes: preparing a seed substrate; and supplying a group-III element oxide gas and a nitrogen element-containing gas at a supersaturation ratio (Po/Pe) greater than 1 and equal to or less than 5, then, growing a group-III nitride crystal on the seed substrate, wherein the Po is a supply partial pressure of the group-III element oxide gas, and the Pe is an equilibrium partial pressure of the group-III element oxide gas.

Abstract: The present invention provides a determination apparatus (10) having: a criteria value acquisition unit (11) that acquires a criteria value which is a first performance value of a storage battery at a criteria time; a target value acquisition unit (12) that acquires a target value which is the first performance value of the storage battery at a determination time; a usage method data acquisition unit (13) that acquires usage method data indicating a usage method of the storage battery from the criteria time to the determination time; a predicted range computing unit (14) that computes a predicted range of the first performance value at the determination time on the basis of the criteria value, the usage method data, and a time elapsed from the criteria time to the determination time; and a determination unit (15) that determines that the storage battery is not to be compensated if the target value is within the predicted range and that the storage battery is to be compensated if the target value is outside th

Abstract: The present invention provides a viscous adhesive capable of retaining the shape of an electrode and allowing for production of an electrode for a lithium-ion battery having a structure in which the energy density of the electrode does not decrease. The present invention relates to a viscous adhesive for a lithium-ion electrode which allows active materials to adhere to each other in a lithium-ion electrode, the viscous adhesive having a glass transition temperature of 60° C. or lower, a solubility parameter of 8 to 13 (cal/cm3)1/2, and a storage shear modulus and a loss shear modulus of 2.0×103 to 5.0×107 Pa as measured in a frequency range of 10?1 to 101 Hz at 20° C.

Abstract: A host vehicle position estimation device includes: a detected position recognition unit configured to recognize a detected position of a first target object included in a first recognition range and a detected position of a second target object included in a second recognition range; a host vehicle first position estimation unit configured to estimate a host vehicle first position; a host vehicle second position estimation unit configured to estimate a host vehicle second position; and a deviation determination unit configured to determine that there is a deviation between the detected position of the target object and the information on the position of the target object on the map if a distance between the host vehicle first position and the host vehicle second position is equal to or greater than a deviation threshold value.

Abstract: The method of forming a nitride semiconductor film includes intermittently sputtering a target of gallium nitride inside a vacuum chamber containing nitrogen and argon, and depositing sputtered particles of the gallium nitride that are scattered from the target inside the vacuum chamber, on a substrate having a temperature of 560 degrees C. or higher and 650 degrees C. or lower. A ratio of a flow rate of the nitrogen to a sum of the flow rate of the nitrogen and a flow rate of the argon supplied to the vacuum chamber is 6% or higher and 18% or lower.

Abstract: The present invention provides a determination apparatus (10) including: a target information obtaining unit (12) that obtains current position information of an energy storage system; a regular information obtaining unit (11) (position information obtaining unit) that obtains installation position associated with each energy storage system; and a determination unit (13) that determines whether or not the energy storage system is installed at the installation position on the basis of the current position information of the energy storage system.

Abstract: A semiconductor device includes: a first chip to restrict current flow in a first direction through a current path; a second chip to restrict the current flow in a second direction opposite to the first direction, through the current path; a wiring having one end connected to the first chip and the other end connected to the second chip, and provided as a part of the current path by relaying the first chip and the second chip; a lead frame having a first lead arranged and fixed with the first chip and a second lead is arranged and fixed with the second chip; and molding resin sealing the first chip, the second chip, the wiring and the lead frame. The wiring is a shunt resistor having a resistive body. The lead frame further has a sense terminal to detect a voltage drop across the resistive body.

Abstract: A group-III nitride substrate includes: a first region having a first impurity concentration in a polished surface; and a second region having a second impurity concentration lower than the first impurity concentration in the polished surface, wherein a first dislocation density of the first region is lower than a second dislocation density of the second region.

Abstract: A production method for a group III nitride crystal, the production method includes: preparing a plurality of group III nitride pieces as a plurality of seed crystals on a substrate, and growing a group III nitride crystal by bringing a surface of each of the seed crystals into contact with a melt that comprises at least one group III element selected from gallium, aluminum, and indium, and an alkali metal in an atmosphere comprising nitrogen, and thereby reacting the group III element and the nitrogen in the melt, wherein the step of growing a group III nitride crystal includes: growing a plurality of first group III nitride crystals whose cross-sections each have a triangular shape or a trapezoidal shape, from the plurality of seed crystals; and growing second group III nitride crystals each in a gap among the plurality of first group III nitride crystals.

Abstract: There is provided a manufacturing method of a III-V compound crystal including a seed-crystal-formed substrate provision step of providing a seed-crystal-formed substrate in which a III-V compound seed crystal has been formed on a substrate, a seed crystal partial separation step of separating part of a portion in contact with the substrate in the III-V compound seed crystal from the substrate, and a crystal growth step of generating and growing the III-V compound crystal by reacting a group III element and a group V element with use of the III-V compound seed crystal as a nucleus after the seed crystal partial separation step.

Abstract: An information processing apparatus (2000) receives a request for registration of a substitute person. The request includes at least a face image of the substitute person who picks up a picked-up target as a substitute. The information processing apparatus (2000) registers the substitute person using the face image of the substitute person shown in the request. In addition, the information processing apparatus (2000) performs notification related to registration of the substitute person with respect to an authorized picking-up person associated with the picked-up target. The authorized picking-up person is determined using an authorized picking-up person information storage unit that stores the picked-up target in association with the authorized picking-up person of the picked-up target.

Abstract: A method of manufacturing a group-III nitride crystal includes: a seed crystal preparation step of preparing a plurality of dot-shaped group-III nitrides on a substrate as a plurality of seed crystals for growth of a group-III nitride crystal; and a crystal growth step of bringing surfaces of the seed crystals into contact with a melt containing an alkali metal and at least one group-III element selected from gallium, aluminum, and indium in an atmosphere containing nitrogen and thereby reacting the group-III element with the nitrogen in the melt to grow the group-III nitride crystal.

Abstract: An object of the present invention is to provide a method for producing a group III nitride crystal in which generation of breaking or cracks is less likely to occur. To achieve the object, the method for producing a group III nitride crystal includes: seed crystal preparation including disposing a plurality of crystals of a group III nitride as a plurality of seed crystals on a substrate; and crystal growth including growing group III nitride crystals by contacting a surface of each of the seed crystals with a melt containing at least one group III element selected from gallium, aluminum, and indium and an alkali metal in an atmosphere containing nitrogen. In the seed crystal preparation, the plurality of seed crystals are disposed within a hexagonal region provided on the substrate.

Abstract: A method of manufacturing a group-III nitride crystal includes: preparing a seed substrate; and supplying a group-III element oxide gas and a nitrogen element-containing gas at a supersaturation ratio (Po/Pe) greater than 1 and equal to or less than 5, then, growing a group-III nitride crystal on the seed substrate, wherein the Po is a supply partial pressure of the group-III element oxide gas, and the Pe is an equilibrium partial pressure of the group-III element oxide gas.

Abstract: The present invention provides a determination apparatus (10) having: an acquisition unit (12) that acquires a state value indicating the status of a power storage system; and a determination unit (11) that determines whether or not maintenance has been performed for the power storage system, on the basis of a temporal change of the state value. For example, when the temporal change of the state value is changed from the previous trend, the determination unit (11) determines that maintenance has been performed.

Abstract: An information processing apparatus includes a mode setting acceptance unit that accepts a setting of a time to control a plurality of devices, on the basis of a mode in which operation contents of the devices are set, and an execution unit that outputs the operation contents of the plurality of devices at the set time.

Abstract: A group-III nitride substrate includes: a base material part of a group-III nitride including a front surface, a back surface, and an inner layer between the front surface and the back surface, wherein the carbon concentration of the front surface of the base material part is higher than the carbon concentration of the inner layer.

Abstract: According to the present invention, provided is a management device (10) including: a collection unit (11) that collects failure information indicating that a failure has occurred in each of a plurality of power storage systems; a computing unit (12) that computes a failure rate in a group in which the power storage systems each having a predetermined matter in common are collected; and an estimation unit (13) that estimates a characteristic of the failure indicated by the failure information, on the basis of the failure rate and a reference value.

Abstract: The present invention provides a determination apparatus (10) including a regular information obtaining unit (11) (information obtaining unit) that obtains first information indicating plural components, included in an energy storage system, associated with each energy storage system, an object information obtaining unit (12) that obtains object information indicating the plural components included in the energy storage system to be verified; and a determination unit (13) that determines whether or not a configuration of the energy storage system to be verified is regular on the basis of the first information and the object information.