Abstract: A method for manufacturing a group III nitride semiconductor crystal substrate includes providing, as a seed crystal substrate, a group III nitride single crystal grown by a liquid phase growth method, and homoepitaxially growing a group III nitride single crystal by a vapor phase growth method on a principal surface of the seed crystal substrate. The principal surface of the seed crystal substrate is a +c-plane, and the seed crystal substrate has an atomic oxygen concentration of not more than 1×1017 cm?3 in a crystal near the principal surface over an entire in-plane region thereof.

Abstract: A crystal growth apparatus includes: a raw material supplying part that mixes raw materials including a group III element metal and an alkali metal; a growing part disposed at a stage under the raw material supplying part, the growing part having a seed substrate; a tilting mechanism that tilts the raw material supplying part and the growing part; a heater that heats the raw material supplying part and the growing part; a control part that controls an operation of the tilting mechanism; and a supply port that supplies a nitrogen element-containing substance to the growing part, wherein the raw material supplying part having an opening facing to the growing part, the opening being disposed at a bottom portion and one edge portion of the raw material supplying part, and the control part controls the tilting mechanism so as to tilt the raw material supplying part toward the other edge portion on the side opposite to the one edge portion so as to prevent the raw materials from entering the opening when the raw ma

Abstract: The present invention provides a method for producing a Group III nitride crystal, capable of producing a Group III nitride crystal in a large size with few defects and high quality.

Abstract: To provide a method for producing a Group III element nitride crystal by growing it on a plane on the ?c-plane side as a crystal growth plane. The present invention is a method for producing a Group III element nitride crystal, including a vapor phase growth step of growing a Group III element nitride crystal 12 on a crystal growth plane of a Group III element nitride seed crystal 11 by vapor deposition. The vapor phase growth step is a step of causing a Group III metal, an oxidant, and a nitrogen-containing gas to react with one another to grow the Group III element nitride crystal 12 or includes: a reduced product gas generation step of causing a Group III element oxide and a reducing gas to react with each other to generate a gas of a reduced product of the Group III element oxide; and a crystal generation step of causing the gas of the reduced product and a nitrogen-containing gas to react with each other to generate the Group III element nitride crystal 12.

Abstract: A high-quality nitride crystal substrate is manufactured, using a substrate for crystal growth with its diameter enlarged, the nitride crystal substrate including: a first step of preparing a substrate for crystal growth having a plurality of seed crystal substrates made of nitride crystals, arranged in a planar appearance, so that their main surfaces are parallel to each other and their lateral surfaces are in contact with each other, and a difference of a lattice constant between adjacent seed crystal substrates arbitrarily selected from a plurality of the seed crystal substrates is within 7×10?5 ?; and a second step of growing a crystal film on a ground surface belonging to the substrate for crystal growth.

Abstract: The present invention provides a target substance transfer method, a crystal production method, a composition production method, and a target substance transfer device, which allow the concentration of a target substance to be increased easily and effectively. The target substance transfer method is a method for transferring a target substance 103 from a first phase 101 that is a liquid or solid phase containing the target substance 103 to a second phase 102 including: a phase approximation step of bringing the first phase 101 and the second phase 102 into close proximity; and a bubble collapse step of forming bubbles in the vicinity of a boundary between the first phase 101 and the second phase 102 and then causing the bubbles to collapse.

Abstract: There is provided a method for manufacturing a nitride crystal substrate, including: arranging a plurality of seed crystal substrates made of a nitride crystal in a planar appearance, so that their main surfaces are parallel to each other and their lateral surfaces are in contact with each other; growing a first crystal film using a vapor-phase growth method on a surface of the plurality of seed crystal substrates arranged in the planar appearance, and preparing a combined substrate formed by combining the adjacent seed crystal substrates each other by the first crystal film; growing a second crystal film using a liquid-phase growth method on a main surface of the combined substrate so as to be embedded in a groove that exists at a combined part of the seed crystal substrates, and preparing a substrate for crystal growth having a smoothened main surface; and growing a third crystal film using the vapor-phase growth method, on the smoothed main surface of the substrate for crystal growth.

Abstract: A large Group III nitride crystal of high quality with few defects such as a distortion, a dislocation, and warping is produced by vapor phase epitaxy. A method for producing a Group III nitride crystal includes: a first Group III nitride crystal production process of producing a first Group III nitride crystal 1003 by liquid phase epitaxy; and a second Group III nitride crystal production process of producing a second Group III nitride crystal 1004 on the first crystal 1003 by vapor phase epitaxy by causing a Group III element metal to react with an oxidizing agent and nitrogen-containing gas.

Abstract: A large Group III nitride crystal of high quality with few defects such as a distortion, a dislocation, and warping is produced by vapor phase epitaxy. A method for producing a Group III nitride crystal includes: a first Group III nitride crystal production process of producing a first Group III nitride crystal 1003 by liquid phase epitaxy; and a second Group III nitride crystal production process of producing a second Group III nitride crystal 1004 on the first crystal 1003 by vapor phase epitaxy. In the first Group III nitride crystal production process, the surfaces of seed crystals 1003a (preliminarily provided Group III nitride) are brought into contact with an alkali metal melt, a Group III element and nitrogen are cause to react with each other in a nitrogen-containing atmosphere in the alkali metal melt, and the Group III nitride crystals are bound together by growth of the Group III nitride crystals grown from the seed crystals 1003a to produce a first crystal 1003.

Abstract: An antifogging article excellent in both an antifogging property and abrasion resistance and a manufacturing method thereof are provided. The antifogging article includes: a substrate; a water-absorbing resin layer disposed on the substrate; and an overcoat layer disposed on the water-absorbing resin layer and including: a hydrolyzed condensate of an alkoxysilane compound; and silica particles, wherein a film thickness of the overcoat layer is 20 to 350 nm and the overcoat layer is formed from an overcoat composition containing 90 to 45 parts by mass of the alkoxysilane compound and 10 to 55 parts by mass of the silica particles relative to total 100 parts by mass of the alkoxysilane compound and the silica particles.

Abstract: An antifogging agent composition excellent in an antifogging property and peel resistance and an antifogging article obtained using it are provided. The antifogging agent composition includes: a first resin having a water-soluble rate of 90% or more; a second rein having a water-soluble rate of 50% or less; an alkoxysilane compound; and a curing agent, wherein the first resin is a polyfunctional aliphatic epoxy resin, and the second resin is a polyfunctional aromatic epoxy resin having a water-soluble rate of less than 20%. Further, the antifogging article includes: a substrate; and a cured product of the antifogging agent composition, disposed in at least a part of a region on the substrate. Further, a manufacturing method of an antifogging article includes: forming an antifogging agent composition layer by applying the antifogging agent composition on a substrate; and forming an antifogging layer by heat-treating the applied antifogging agent composition.

Abstract: There are provided an antifogging agent composition enabling formation of an antifogging layer excellent in yellowing resistance and bleed resistance and an antifogging article made using the same. The antifogging agent composition contains: a water-soluble epoxy resin; an aluminum compound; and an alkoxysilane compound and/or a partially hydrolyzed condensate of an alkoxysilane compound, wherein the water-soluble epoxy resin is a polyfunctional aliphatic epoxy resin. Further, the antifogging article includes: a substrate; and a resin layer disposed on at least a part of a region on the substrate, having a saturated water absorption amount of 50 mg/cm3 or more, and having a Martens hardness of 2 N/mm2 or more.

Abstract: An antifogging article having an antifogging film excellent in antifogging property and in durability, an article for transportation apparatus provided with the antifogging article, and a base layer forming composition with sufficiently long pot life used for obtaining the antifogging article are provided. An antifogging article has a substrate, and an antifogging film on the substrate having a base layer made of a base material with low water absorbing property, and a water absorbing layer made of a water absorbing material having a water absorbing property higher than that of the base material, and the base material is obtained by using a composition containing (A) a raw material component of a first cured resin, (B) a silane-based coupling agent having a functional group other than an amino group having reactivity with the (A) component and a hydrolyzable group, and (C) tetraalkoxysilane and/or a polymer thereof in a prescribed ratio.

Abstract: The present invention is intended to provide a method of producing a Group III nitride crystal that prevents a halogen-containing by-product from adversely affecting crystal generation and is superior in reactivity and operability. A method of producing a Group III nitride crystal includes a step of causing a Group III metal to react with an oxidizing gas and nitrogen-containing gas, thereby producing a Group III nitride crystal.

Abstract: An apparatus is used for manufacturing a group 13 nitride crystal by using a flux method. The apparatus includes a reaction vessel, a rotational mechanism, and a structure. The reaction vessel contains a mixed melt and a seed crystal placed in the mixed melt. The mixed melt contains an alkali metal or an alkali-earth metal and a group 13 element. The rotational mechanism rotates the reaction vessel. The structure is provided inside the reaction vessel for stirring the mixed melt and is constructed such that a height of a first portion of the structure close to an inner wall of the reaction vessel is higher than a height of a second portion of the structure close to a center of the reaction vessel.

Abstract: An antifogging article having a high antifogging property and being excellent in persistence of the antifogging property is provided. The antifogging article having a substrate and a water absorbing layer on a surface of at least a part of the substrate, wherein the water absorbing layer comprises a cured epoxy resin as a main body, obtained by reacting a polyepoxide and a curing agent, and a surfactant having an HLB within a range of 6 to 18, the HLB being calculated by a Griffin method.

Abstract: A reagent for measuring platelets comprising Nile Blue hydrogensulfate, or Nile Blue and an acid, a reagent kit for measuring platelets comprising the reagent for measuring platelets, and a method for measuring platelets using the reagent or reagent kit.

Abstract: Apparatus and method for producing a Group III nitride crystal are to be provided. The apparatus for producing a Group III nitride crystal, contains: a chamber; a nitrogen element-containing gas supplying port for supplying a nitrogen element-containing gas to the chamber; a compound gas supplying port for supplying a compound gas of the Group III element to the chamber, so as to mix the compound gas with the nitrogen element-containing gas; a discharging port for discharging the compound gas and the nitrogen element-containing gas thus mixed, outside the chamber; a holder for holding a seed substrate at a position that is on a downstream side of a mixing point of the compound gas and the nitrogen element-containing gas and is an upstream side of the discharging port; a first heater for heating the seed substrate; and a second heater for heating a space between the mixing point and the seed substrate to a temperature that is higher than a temperature heated by the first heater.

Abstract: A method and apparatus for producing a Group III nitride in which the thermal decomposition of the nitrogen element-containing gas is suppressed to enhance the productivity. The method for producing a Group III nitride crystal, comprising: reacting an oxide or a metal of a Group III element under a heated atmosphere to form a compound gas of the Group III element; mixing a nitrogen element-containing gas at a temperature that is lower than that of the compound gas, with the compound gas; and reacting the nitrogen element-containing gas with the compound gas to form a Group III nitride crystal.

Abstract: A nitride crystal which encircles an outer periphery of a seed crystal, the nitride crystal in an embodiment includes: a first partial region, and a second partial region that has optical characteristics different from those of the first partial region and has optical characteristics which indicate the crystal orientation.