Abstract: The present disclosure relates to a photodetection device and an electronic apparatus that allow for reducing surface reflection from an on-chip microlens and suppressing deterioration of image quality. Provided is a photodetection device including: a plurality of pixels that have photoelectric conversion units; on-chip microlenses that are formed in such a way as to correspond to the individual pixels; and an antireflection film that is formed on a surface of the on-chip microlens, in which the antireflection film is constituted by a stacking of: a first inorganic film that is formed by a metal oxide film; and a second inorganic film that is formed on a surface of the first inorganic film and has a lower refractive index than the first inorganic film. The present disclosure can be applied to, for example, a CMOS solid-state imaging device.

Abstract: A control unit performs a lane departure suppression control when a host vehicle is about to depart from a traveling lane. The control unit determines whether a low impact collision has occurred. The control unit performs a secondary collision damage mitigation control when the low impact collision is determined to have occurred while the lane departure suppression control is being performed.

Abstract: A pre-training method executed by a training apparatus includes converting an input acoustic feature amount sequence into a corresponding intermediate acoustic feature amount sequence having a first length using a first conversion model to which a conversion model parameter is provided, converting a correct answer symbol sequence to generate a first frame unit symbol sequence having the first length and generating a second frame unit symbol sequence having the first length by delaying the first frame unit symbol sequence by one frame, converting the second frame unit symbol sequence into an intermediate character feature amount sequence having the first length using a second conversion model to which a character feature amount estimation model parameter is provided, and performing label estimation using an estimation model to which an estimation model parameter is provided based on the intermediate acoustic feature amount sequence and the intermediate character feature amount sequence.

Abstract: A solid-state imaging device according to an embodiment includes: a plurality of pixels, each of the plurality of pixels including a substrate having a first surface serving as a light incident surface, a photoelectric conversion unit located inside the substrate, a light shielding unit provided on a first surface side, the light shielding unit having a hole portion configured to allow light to be incident on the photoelectric conversion unit, and a first lens made of silicon, the first lens being provided on the light shielding unit and condensing incident light toward the hole portion.

Abstract: To prevent the occurrence of a defect in an infrared-light attenuation filter and prevent a reduction in image quality. An imaging device includes a photoelectric converter, an on-chip lens, a color filter, the infrared-light attenuation filter, and a protective film. The photoelectric converter performs photoelectric conversion depending on incident light. The on-chip lens collects the incident light into the photoelectric converter. Infrared light and visible light of a specified wavelength from among the collected incident light are transmitted through the color filter. The infrared-light attenuation filter attenuates the infrared light from among the collected incident light, and visible light from among the collected incident light is transmitted through the infrared-light attenuation filter. The protective film is arranged adjacent to the infrared-light attenuation filter and protects the infrared-light attenuation filter.

Abstract: Provided is a solid-state imaging device capable of improving the quantum efficiency while reducing an inter-same-color sensitivity difference. Provided are: a substrate; a plurality of photoelectric conversion units formed on the substrate; a microlens array including a plurality of microlenses formed on one surface side of the substrate for a photoelectric conversion unit group including at least two or more of the adjacent photoelectric conversion units; and a trench portion which has a lattice shape and is formed in the substrate to surround each of the photoelectric conversion units. Furthermore, the microlens is formed by laminating two or more lens layers having different refractive indexes. Furthermore, out of the two or more lens layers, a lens layer closer to the substrate has a lower refractive index.

Abstract: Provided is a semiconductor device including: a multilayer substrate including an optical element; a light-transmitting plate provided on the substrate to cover the optical element; and a lens of an inorganic material provided between the substrate and the light-transmitting plate. A structure having a same strength as a strength per unit area of the lens is provided at a portion outside an effective photosensitive region where the optical element is formed, when the substrate is viewed in plan.

Abstract: Provided is a semiconductor device including: a multilayer substrate including an optical element; a light-transmitting plate provided on the substrate to cover the optical element; and a lens of an inorganic material provided between the substrate and the light-transmitting plate. A structure having a same strength as a strength per unit area of the lens is provided at a portion outside an effective photosensitive region where the optical element is formed, when the substrate is viewed in plan.

Abstract: The present technology relates to techniques of preventing intrusion of moisture into a chip. Various illustrative embodiments include image sensors that include: a substrate; a plurality of layers stacked on the substrate; the plurality of layers including a photodiode layer having a plurality of photodiodes formed on a surface of the photodiode layer; the plurality of layers including at least one layer having a groove formed such that a portion of the at least one layer is excavated; and a transparent resin layer formed above the photodiode layer and formed in the groove. The present technology can be applied to, for example, an image sensor.

Abstract: [Object] A solid-state imaging apparatus that can suppress degradation of image quality caused by a groove between lenses is provided, and a method for manufacturing the solid-state imaging apparatus is also provided. [Solving Means] A solid-state imaging apparatus according to the present disclosure includes multiple photoelectric conversion sections, and multiple lenses provided above the multiple photoelectric conversion sections. The multiple lenses each include a groove provided between the lenses, and the groove includes a bottom surface shaped to protrude downward.

Abstract: There is provided a camera module including a stacked lens structure including a plurality of lens substrates. The plurality of lens substrates includes a first lens substrate including a first lens that is disposed at an inner side of a through-hole formed in the first lens substrate, and a second lens substrate including a second lens that is disposed at an inner side of a through-hole formed in the second lens substrate, wherein the first lens substrate is directly bonded to the second lens substrate. The camera module further includes an electromagnetic drive unit configured to adjust a distance between the stacked lens structure and a light-receiving element.

Abstract: The sensitivity of an image sensor is improved. The image sensor includes a plurality of pixels and a light-blocking wall. The plurality of pixels included in the image sensor each includes a photoelectric conversion unit disposed on a semiconductor substrate and photoelectrically converting incident light that is irradiated, and an on-chip lens that focuses the incident light onto the photoelectric conversion unit. The light-blocking wall included in the image sensor is disposed adjacent to the semiconductor substrate at a boundary between the plurality of pixels and configured such that a side of the light-blocking wall that is irradiated with the incident light has a tapered-shape cross-section, the light-blocking wall blocking the incident light.

Abstract: The present technology relates to, for example, a lens attached substrate including a substrate which has a through-hole formed therein and a light shielding film formed on a side wall of the through-hole and a lens resin portion which is formed inside the through-hole of the substrate. The present technology can be applied to, for example, a lens attached substrate, a layered lens structure, a camera module, a manufacturing apparatus, a manufacturing method, an electronic device, a computer, a program, a storage medium, a system, and the like.

Abstract: The present technology relates to, for example, a lens attached substrate including a substrate which has a through-hole formed therein and a light shielding film formed on a side wall of the through-hole and a lens resin portion which is formed inside the through-hole of the substrate. The present technology can be applied to, for example, a lens attached substrate, a layered lens structure, a camera module, a manufacturing apparatus, a manufacturing method, an electronic device, a computer, a program, a storage medium, a system, and the like.

Abstract: The present technology relates to, for example, a lens attached substrate including a substrate which has a through-hole formed therein and a light shielding film formed on a side wall of the through-hole and a lens resin portion which is formed inside the through-hole of the substrate. The present technology can be applied to, for example, a lens attached substrate, a layered lens structure, a camera module, a manufacturing apparatus, a manufacturing method, an electronic device, a computer, a program, a storage medium, a system, and the like.

Abstract: The present technology relates to techniques of preventing intrusion of moisture into a chip. Various illustrative embodiments include image sensors that include: a substrate; a plurality of layers stacked on the substrate; the plurality of layers including a photodiode layer having a plurality of photodiodes formed on a surface of the photodiode layer; the plurality of layers including at least one layer having a groove formed such that a portion of the at least one layer is excavated; and a transparent resin layer formed above the photodiode layer and formed in the groove. The present technology can be applied to, for example, an image sensor.

Abstract: Provided is a semiconductor device including: a multilayer substrate including an optical element; a light-transmitting plate provided on the substrate to cover the optical element; and a lens of an inorganic material provided between the substrate and the light-transmitting plate. A structure having a same strength as a strength per unit area of the lens is provided at a portion outside an effective photosensitive region where the optical element is formed, when the substrate is viewed in plan.

Abstract: Provided is a semiconductor device including: a multilayer substrate including an optical element; a light-transmitting plate provided on the substrate to cover the optical element; and a lens of an inorganic material provided between the substrate and the light-transmitting plate. A structure having a same strength as a strength per unit area of the lens is provided at a portion outside an effective photosensitive region where the optical element is formed, when the substrate is viewed in plan.

Abstract: The present technology relates to techniques of preventing intrusion of moisture into a chip. Various illustrative embodiments include image sensors that include: a substrate; a plurality of layers stacked on the substrate; the plurality of layers including a photodiode layer having a plurality of photodiodes formed on a surface of the photodiode layer; the plurality of layers including at least one layer having a groove formed such that a portion of the at least one layer is excavated; and a transparent resin layer formed above the photodiode layer and formed in the groove. The present technology can be applied to, for example, an image sensor.

Abstract: To prevent the occurrence of a defect in an infrared-light attenuation filter and prevent a reduction in image quality. An imaging device includes a photoelectric converter, an on-chip lens, a color filter, the infrared-light attenuation filter, and a protective film. The photoelectric converter performs photoelectric conversion depending on incident light. The on-chip lens collects the incident light into the photoelectric converter. Infrared light and visible light of a specified wavelength from among the collected incident light are transmitted through the color filter. The infrared-light attenuation filter attenuates the infrared light from among the collected incident light, and visible light from among the collected incident light is transmitted through the infrared-light attenuation filter. The protective film is arranged adjacent to the infrared-light attenuation filter and protects the infrared-light attenuation filter.