Abstract: [Object] To provide a chemical sensor capable of detecting light emitted from a detection target object efficiently, a method of producing the chemical sensor, and a chemical detection apparatus. [Solving Means] A chemical sensor according to the present technology includes a substrate and a lens layer. On the substrate, at least one light detection unit is formed. The lens layer is laminated on the substrate and has optical transparency, and a lens structure is formed on a surface of the lens layer opposite to the substrate in a concave shape toward a lamination direction.

Abstract: The present technology relates to techniques of preventing intrusion of moisture into a chip. Various illustrative embodiments include image sensors that include: a substrate; a plurality of layers stacked on the substrate; the plurality of layers including a photodiode layer having a plurality of photodiodes formed on a surface of the photodiode layer; the plurality of layers including at least one layer having a groove formed such that a portion of the at least one layer is excavated; and a transparent resin layer formed above the photodiode layer and formed in the groove. The present technology can be applied to, for example, an image sensor.

Abstract: Provided is a semiconductor device including: a multilayer substrate including an optical element; a light-transmitting plate provided on the substrate to cover the optical element; and a lens of an inorganic material provided between the substrate and the light-transmitting plate. A structure having a same strength as a strength per unit area of the lens is provided at a portion outside an effective photosensitive region where the optical element is formed, when the substrate is viewed in plan.

Abstract: A chemical sensor including a substrate, an on-chip lens layer, and a flattening layer. On the substrate, a plurality of photodiodes are formed and arranged in a planar form. The on-chip lens layer collects incident light to the photodiodes and is provided on the substrate. The flattening layer covers and planarizes the on-chip lens to form a probe holding surface for holding a probe material.

Abstract: A chemical sensor according to an embodiment of the present technology includes a substrate, a low refractive index layer, a high refractive index layer, and a light detection unit. The low refractive index layer is laminated on the substrate and has a second refractive index smaller than a first refractive index that is a refractive index of a detection target object. The high refractive index layer is laminated on the low refractive index layer, has a third refractive index larger than the first refractive index, and includes a holding surface on which the detection target object is held, and illumination light propagates therein. The light detection unit is provided on the substrate and detects detection target light generated from the detection target object by the illumination light.

Abstract: Provided is a semiconductor device including: a multilayer substrate including an optical element; a light-transmitting plate provided on the substrate to cover the optical element; and a lens of an inorganic material provided between the substrate and the light-transmitting plate. A structure having a same strength as a strength per unit area of the lens is provided at a portion outside an effective photosensitive region where the optical element is formed, when the substrate is viewed in plan.

Abstract: A color change member includes: a color change layer that has a light incident surface, a light emission surface, and a side surface; a first protective layer that is provided on the light incident surface of the color change layer; and a second protective layer that is provided on at least a part of the side surface of the color change layer.

Abstract: The present invention relates to a solid-state imaging device having good focusing properties, a method for manufacturing such a solid-state imaging device, and an electronic apparatus. The solid-state imaging device has a semiconductor substrate 11 and a photoelectric conversion part formed in the semiconductor substrate 11. In the solid-state imaging device, a laminate including an organic material layer and an inorganic material layer is formed on the semiconductor substrate with at least one stress relaxation layer 22 interposed between the organic and inorganic material layers. This technology is applicable to, for example, solid-state imaging devices having pixels and microlenses placed thereon.

Abstract: [Object] To provide a chemical sensor capable of detecting light emitted from a detection target object efficiently, a method of producing the chemical sensor, and a chemical detection apparatus. [Solving Means] A chemical sensor according to the present technology includes a substrate and a lens layer. On the substrate, at least one light detection unit is formed. The lens layer is laminated on the substrate and has optical transparency, and a lens structure is formed on a surface of the lens layer opposite to the substrate in a concave shape toward a lamination direction.

Abstract: [Object] To provide a chemical sensor provided with a spectral filter excellent in spectral characteristic, a chemical sensor module, a chemical substance detection apparatus, and a chemical substance detection method. [Solving Means] A chemical sensor according to the present technology is provided with a substrate and a plasmon absorption layer. On the substrate, the photodetection unit is formed. The plasmon absorption layer is laminated on the substrate and has a metal nanostructure that generates plasmon absorbency.

Abstract: [Object] To provide a chemical sensor, a chemical sensor module, a chemical detection apparatus, and a chemical detection method that are capable of detecting chemicals with high accuracy and high sensitivity. [Solving Means] A chemical sensor according to an embodiment of the present technology includes a substrate, a low refractive index layer, a high refractive index layer, and a light detection unit. The low refractive index layer is laminated on the substrate and has a second refractive index smaller than a first refractive index that is a refractive index of a detection target object. The high refractive index layer is laminated on the low refractive index layer, has a third refractive index larger than the first refractive index, and includes a holding surface on which the detection target object is held, and illumination light propagates therein.

Abstract: [Object] To provide a chemical sensor capable of detecting a biomolecule with high accuracy, a chemical sensor module, a biomolecule detection apparatus, and a biomolecule detection method. [Solving Means] A chemical sensor includes a substrate, an on-chip lens, and a flattening layer. On the substrate, a plurality of photodiodes are formed to be arranged in a planar form. The on-chip lens collects incident light to the photodiodes and is provided on the substrate. The flattening layer covers and flattens the on-chip lens to form a probe holding surface for holding a probe material.

Abstract: [Object] To provide a chemical sensor, a biomolecule detection apparatus, and a biomolecule detection method capable of detecting a biomolecule with high accuracy. [Solving Means] A chemical sensor according to the present invention includes a substrate, an optical layer, and an intermediate layer. On the substrate, a plurality of photodiodes is arranged in a planar form. The optical layer is laminated on the substrate and has a waveguide formed therein which guides incident light to each of the photodiodes. The intermediate layer is laminated on the optical layer and has a probe holding area formed thereon for each waveguide, and the probe holding area is capable of holding a probe material.

Abstract: The present invention relates to a solid-state imaging device having good focusing properties, a method for manufacturing such a solid-state imaging device, and an electronic apparatus. The solid-state imaging device has a semiconductor substrate 11 and a photoelectric conversion part formed in the semiconductor substrate 11. In the solid-state imaging device, a laminate including an organic material layer and an inorganic material layer is formed on the semiconductor substrate with at least one stress relaxation layer 22 interposed between the organic and inorganic material layers. This technology is applicable to, for example, solid-state imaging devices having pixels and microlenses placed thereon.

Abstract: The present invention relates to a solid-state imaging device having good focusing properties, a method for manufacturing such a solid-state imaging device, and an electronic apparatus. The solid-state imaging device has a semiconductor substrate 11 and a photoelectric conversion part formed in the semiconductor substrate 11. In the solid-state imaging device, a laminate including an organic material layer and an inorganic material layer is formed on the semiconductor substrate with at least one stress relaxation layer 22 interposed between the organic and inorganic material layers. This technology is applicable to, for example, solid-state imaging devices having pixels and microlenses placed thereon.

Abstract: The present invention relates to a solid-state imaging device having good focusing properties, a method for manufacturing such a solid-state imaging device, and an electronic apparatus. The solid-state imaging device has a semiconductor substrate 11 and a photoelectric conversion part formed in the semiconductor substrate 11. In the solid-state imaging device, a laminate including an organic material layer and an inorganic material layer is formed on the semiconductor substrate with at least one stress relaxation layer 22 interposed between the organic and inorganic material layers. This technology is applicable to, for example, solid-state imaging devices having pixels and microlenses placed thereon.

Abstract: A liquid film is formed on the surface of a porous body provided with a hydrophobic layer and hydrophilic layer, by moving thereon an ionic liquid having a selective absorption capacity of specific gas, and the specific gas within the gas to be processed is absorbed into the liquid film by bringing pressurized gas to be processed into contact with the liquid film. The specific gas is, for example, a carbon dioxide gas and the ionic liquid is, for example, an imidazolium salt. The specific gas absorbed into the liquid film is passed through the porous body by the use of a difference in pressure, whereby it is collected on a low pressure side. The specific gas absorbed into this collected liquid is then separated into a gas and a liquid by a separator, and the specific gas is released and collected.

Abstract: Liquid film 7 is formed on the surface of a porous body 2 provided with a hydrophobic layer 6a and hydrophilic layer 6b, by moving thereon an ionic liquid having a selective absorption capacity of specific gas, and the specific gas within the gas to be processed is absorbed into the liquid film 7 by bringing pressurized gas to be processed into contact with the liquid film 7. The specific gas is, for example, a carbon dioxide gas and the ionic liquid is, for example, an imidazolium salt. The specific gas absorbed into the liquid film 7 is passed through the porous body 2 by use of a difference in pressure, and is collected on a low pressure side 11. The specific gas absorbed into this liquid that has been collected is separated into gas and liquid by a separator 8, and the specific gas is released and collected.