Abstract: An imaging device capable of image processing is provided. The imaging device can retain analog data (image data) obtained by an image-capturing operation in a pixel and perform a product-sum operation of the analog data and a predetermined weight coefficient in the pixel to convert the data into binary data. When the binary data is taken in a neural network or the like, processing such as image recognition can be performed. Since enormous volumes of image data can be retained in pixels in the state of analog data, processing can be performed efficiently.

Abstract: A highly functional imaging device is provided. A small imaging device is provided. An imaging device or the like capable of high-speed operation is provided. A highly reliable imaging device is provided. The imaging device includes a pixel array, and a light-blocking layer and a transparent conductive layer that are over the pixel array. The light-blocking layer includes a first region overlapping with a first pixel and a second region overlapping with a second pixel. The transparent conductive layer includes a region overlapping with the first region and a region overlapping with the second region. The transparent conductive layer has a light-transmitting property. The transparent conductive layer is electrically connected to the first region and the second region. First light enters the photoelectric conversion device included in the first pixel. Second light enters the photoelectric conversion device included in the second pixel.

Abstract: An imaging device capable of image processing is provided. The imaging device can retain analog data (image data) obtained by an image-capturing operation in a pixel and perform a product-sum operation of the analog data and a predetermined weight coefficient in the pixel to convert the data into binary data. When the binary data is taken in a neural network or the like, processing such as image recognition can be performed. Since enormous volumes of image data can be retained in pixels in the state of analog data, processing can be performed efficiently.

Abstract: An imaging device that can obtain imaging data corresponding to high-resolution images in a short period of time is provided. The imaging device includes a pixel including a photoelectric conversion element and n (n is an integer more than 2 inclusive) retention circuits. The photoelectric conversion element and the n retention circuits are stacked. One electrode of the photoelectric conversion element is electrically connected to the first to n-th retention circuits. The retention circuits include OS transistors with an extremely low off-state current feature, and can retain imaging data for a long time. In the first to n-th periods, the imaging device obtains the first to n-th imaging data and retains it in the first to n-th retention circuits. Then, the first to n-th imaging data retained in the first to n-th retention circuits are read out. The read imaging data is output outside the imaging data through AD conversion.

Abstract: A semiconductor device with low power consumption can be provided. The semiconductor device includes a differential circuit and a latch circuit, the differential circuit includes a transistor including an oxide semiconductor in a channel formation region, and the latch circuit includes a transistor including a single semiconductor or a compound semiconductor in a channel formation region. The differential circuit and the latch circuit include an overlap region.

Abstract: An imaging device that has an image processing function and is capable of operating at high speed is provided. The imaging device has an additional function such as image processing, image data obtained by an imaging operation is binarized in a pixel unit, and a product-sum operation is performed using the binarized data. A memory circuit is provided in the pixel unit and retains a weight coefficient used for the product-sum operation. Thus, an arithmetic operation can be performed without the weight coefficient read from the outside every time, whereby power consumption can be reduced. Furthermore, a pixel circuit, a memory circuit, and the like and a product-sum operation circuit and the like are stacked, so that the lengths of wirings between the circuits can be reduced, and high-speed operation with low power consumption can be performed.

Abstract: An imaging device that has an image processing function and is capable of a high-speed operation is provided. The imaging device has an additional function such as image processing, and can retain analog data obtained by an image capturing operation in pixels and extract data obtained by multiplying the analog data by a given weight coefficient. In the imaging device, the data is stored in a memory cell and pooling processing of data stored in a plurality of memory cells can be performed. The pixels are provided so as to have a region overlapping with at least one of the memory cells, a pooling processing circuit, and a reading circuit of the pixels; thus, an increase in the area of the imaging device can be inhibited even with an additional function.

Abstract: A multifunctional imaging device is provided. The imaging device includes first to fourth light-receiving elements and first and second functional layers. The first to fourth light-receiving elements are photoelectric conversion elements having sensitivity to light of different wavelengths from each other. The first and second functional layers each include first and second transistors. The first functional layer and the fourth to first light-receiving elements are stacked in this order over the second functional layer. In each of the first to fourth light-receiving elements, a first conductive layer, a first buffer layer, a photoelectric conversion layer, a second buffer layer, and a second conductive layer are stacked in this order. The photoelectric conversion layer includes an organic compound, and the first buffer layer and the second buffer layer each include a metal or an organic compound.

Abstract: An imaging device having an image processing function is provided. The imaging device includes a plurality of pixels. The pixel has a function of generating first data of an n-th frame by supplying a first weight to image data obtained in the n-th frame (n is an integer greater than or equal to 2). The pixel has a function of generating first data of an n?1-th frame by supplying a second weight to image data obtained in the n?1-th frame. The pixel has a function of generating second data by adding the first data of the n?1-th frame and the first data of the n-th frame.

Abstract: A small-sized and highly functional imaging device is provided. The imaging device includes a photoelectric conversion device formed on a silicon substrate and a transistor including a channel formation region in a silicon epitaxial growth layer formed on the silicon substrate. The transistor provided in the epitaxial growth layer has favorable electrical characteristics, so that the imaging device with little noise can be formed. Since the transistor can be formed so as to have a region overlapping with the photoelectric conversion device, the imaging device can be downsized.

Abstract: An imaging device that can obtain imaging data corresponding to high-resolution images in a short period of time is provided. The imaging device includes a pixel including a photoelectric conversion element and n (n is an integer more than 2 inclusive) retention circuits. The photoelectric conversion element and the n retention circuits are stacked. One electrode of the photoelectric conversion element is electrically connected to the first to n-th retention circuits. The retention circuits include OS transistors with an extremely low off-state current feature, and can retain imaging data for a long time. In the first to n-th periods, the imaging device obtains the first to n-th imaging data and retains it in the first to n-th retention circuits. Then, the first to n-th imaging data retained in the first to n-th retention circuits are read out. The read imaging data is output outside the imaging data through AD conversion.

Abstract: An imaging apparatus including a light source is provided. The imaging apparatus includes a light-emitting device and a photoelectric conversion device in a pixel, and a pixel circuit has a function of outputting third data generated by multiplying obtained first data by second data (weight). Calculating the third data externally enables more detailed information on a subject with respect to a specific wavelength to be obtained. In addition, reading out collectively a plurality of pixels to which proper weight is given enables output of difference data between pixels and the like, which allows external calculation to be omitted.

Abstract: An imaging device capable of image processing is provided. The imaging device has an image recognition function. In the imaging device, cells have a function of acquiring imaging data and a function of retaining weight data. Among the cells arranged in a matrix, some of the cells acquire imaging data and the rest of the cells retain weight data. Then, arithmetic operation is performed using the imaging data and the weight data. For example, all the imaging data can be subjected to arithmetic operation where products of the imaging data and the weight data are calculated and the sum of the calculated products is calculated. That is, product-sum operation can be performed. When an arithmetic operation result is captured by a neural network such as a convolutional neural network (CNN) or the like, the additional function can be used because image processing can be performed on the imaging data.

Abstract: A semiconductor device with a small circuit scale is provided. The semiconductor device includes a first circuit and a second circuit. The first circuit includes first to n-th (n is an integer of 2 or more) transistors and the second circuit includes (n+1)-th to 2n-th transistors. The first to n-th transistors are connected in parallel to each other and the (n+1)-th to 2n-th transistors are connected in series to each other. First to n-th signals are supplied to the first circuit and the second circuit. The first circuit has a function of outputting a first potential when each of potentials of the first to n-th signals is lower than or equal to a first reference potential, and outputting a second potential when at least one of the potentials of the first to n-th signals is higher than the first reference potential.

Abstract: An imaging device having a color imaging function and an infrared imaging function is provided. The imaging device has a structure in which a first photoelectric conversion device and a second photoelectric conversion device are stacked, and the second photoelectric conversion device generates electric charge by absorbing infrared light and transmits light having a wavelength of a higher energy than that of infrared light. The first photoelectric conversion device is positioned to overlap with the second photoelectric conversion device, and generates electric charge by absorbing light (visible light) passing through the second photoelectric conversion device. Thus, a subpixel for color imaging and a subpixel for infrared imaging can be positioned to overlap with each other, and an infrared imaging function can be added without a decrease in the definition of color imaging.

Abstract: An imaging device that has an image processing function and is capable of a high-speed operation is provided. The imaging device, which has an additional function such as image processing, can retain analog data obtained by an image capturing operation in a pixel and extract data obtained by multiplying the analog data by a predetermined weight coefficient. In the imaging device, some of potentials used for an arithmetic operation in pixels are generated by redistribution of charge with which wirings are charged. This enables an arithmetic operation to be performed at high speed with low power consumption, compared with the case where the potentials are supplied from another circuit to the pixels.

Abstract: An imaging device capable of taking an image in both a dark environment and a bright environment in a light amount range equivalent to or greater than that of human vision is desired. A wide dynamic range and high image quality are achieved. In order to obtain an image with a widened dynamic range, two capacitors, a large capacitor and a small capacitor, are provided in one pixel. The large capacitor is formed to be interposed between a transistor for controlling the amount of charge overflowed from the small capacitor and a transistor for resetting accumulated charge, and OS transistors are used as these two transistors. The OS transistor has extremely low off-state current characteristics, and thus can widen the dynamic range of imaging.

Abstract: An object is to obtain accurate distance image data by denoising. Another object is to realize distance image data acquisition in a short time by reducing the frequency of accumulating. A distance image processing system including a solid-state imaging element that can be used for three-dimensionally recognizing an object is provided for the utilization of autonomous driving of passenger cars, for example. Image processing including distance information obtained by a TOF system solid-state imaging element, a so-called TOF camera, is performed by utilizing deep learning. A high-accurate distance image with noise reduced by deep learning can be obtained.

Abstract: An imaging device capable of executing image processing is provided. An imaging device with low power consumption is provided. A highly reliable imaging device is provided. An imaging device with higher integration degree of pixels is provided. An imaging device manufactured at low cost is provided. The imaging device includes a photoelectric conversion device, a first transistor that is formed in a first layer and includes silicon in a channel formation layer, and a capacitor that is formed in a second layer bonded to the first layer. One of a source and a drain of the first transistor is electrically connected to one of electrodes of the photoelectric conversion device, and the other of the source and the drain of the first transistor is electrically connected to one of electrodes of the capacitor. A pixel having a function of generating first data and a function of multiplying the first data to have a given magnification to generate second data is included.

Abstract: The present invention relates to a highly functional imaging device that can be manufactured through a small number of steps. A first stacked body is formed in which a circuit provided with a transistor including a metal oxide in its channel formation region (hereinafter, OS transistor) is stacked over a circuit including a Si transistor. A second stacked body is formed in which an OS transistor is provided over a Si photodiode. Layers including the OS transistors of the first stacked body and the second stacked body are bonded to each other to obtain electrical connection between circuits. With such a structure, even when a structure is employed in which a plurality of circuits having different functions are stacked, the number of polishing steps and bonding steps can be reduced, improving the yield.