Abstract: Provided is a photoelectric conversion device including a pixel array including a first pixel and a second pixel. The first pixel includes a photoelectric conversion unit including a first semiconductor region of a first conductivity type as a charge accumulation layer and photoelectrically converts incident light to generate a signal in accordance with the incident light, and the second pixel includes a second semiconductor region of the first conductivity type and a transistor including a first main electrode formed by a third semiconductor region connected to the second semiconductor region and a gate.

Abstract: Provided is a photoelectric conversion device including a pixel array including a first pixel and a second pixel. The first pixel includes a photoelectric conversion unit including a first semiconductor region of a first conductivity type as a charge accumulation layer and photoelectrically converts incident light to generate a signal in accordance with the incident light, and the second pixel includes a second semiconductor region of the first conductivity type and a transistor including a first main electrode formed by a third semiconductor region connected to the second semiconductor region and a gate.

Abstract: A photoelectric conversion apparatus includes a first substrate having a first semiconductor device layer including a plurality of photoelectric conversion units and a well, and a second substrate having a second semiconductor device layer including a circuit configured to process signals obtained by the plurality of photoelectric conversion units, wherein the first and second substrates are laminated together, wherein the first semiconductor device layer includes an effective pixel region, an optical black pixel region, and an outer periphery region, wherein, in a planar view, a light-blocking region formed by a light-blocking layer overlaps the optical black pixel region, and the light-blocking region does not overlap the outer periphery region, wherein the outer periphery region has a charge draining region including a semiconductor region of the same conductivity type as a signal charge, and wherein a fixed potential is supplied to the charge draining region.

Abstract: A photoelectric conversion device includes a photoelectric converter, a first node configured to be supplied with charges from the photoelectric converter, an amplification transistor configured to output a signal corresponding to a voltage of the first node, a first transistor configured to open/close a path between the first node and a second node not included in a path from the photoelectric converter to the first node, and a second transistor configured to open/close a path between the second node and a third node. A second capacitance which is added to the second node when the second transistor is set in a conductive state is larger than a first capacitance which is added to the first node when the first transistor is set in a conductive state.

Abstract: An apparatus includes a plurality of pixels arranged in a substrate including a first surface provided with a transistor and a second surface opposed to the first surface, and a light shielding portion. The plurality of pixels includes first pixels shielded from light, and second pixels. Each of the plurality of pixels includes a first area of a first conductive type. Each of the first pixels includes a second area. Each of the second pixels includes a third area between the second surface and the first area, and includes a fourth area of a second conductive type between the first area and the first surface. In a cross-section along a first line, an impurity concentration of the first conductive type in the second area is higher than an impurity concentration of the first conductive type in the third area.

Abstract: A photoelectric conversion device includes a photoelectric converter, a first node configured to be supplied with charges from the photoelectric converter, an amplification transistor configured to output a signal corresponding to a voltage of the first node, a first transistor configured to open/close a path between the first node and a second node not included in a path from the photoelectric converter to the first node, and a second transistor configured to open/close a path between the second node and a third node. A second capacitance which is added to the second node when the second transistor is set in a conductive state is larger than a first capacitance which is added to the first node when the first transistor is set in a conductive state.

Abstract: To effectively improve drivability during travel control, provided is a vehicle control device comprising a travel control unit configured to set a target acceleration of the vehicle based on a target vehicle speed and an actual vehicle speed, and execute a travel control for automatically controlling travel of the vehicle by operating the drive device based on the target acceleration; a shift control unit configured to set a target driving force, and execute a shift control for operating the transmission device based on the target driving force; and a downshift suppression control unit configured to acquire an actual acceleration during execution of the travel control and suppress execution of downshift of the transmission device by the shift control unit based on an acceleration threshold value.

Abstract: An apparatus includes pixels each including a conversion unit. The conversion unit includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, and a third semiconductor region of the first conductivity type in order from a light incident surface side, and includes an in-pixel separation portion of the second conductivity type. The second semiconductor region includes a first end and a second end opposing the first end. The conversion unit further includes a fourth semiconductor region between the first and second ends. The in-pixel separation portion separates the first semiconductor region into a first region overlapping the first end and a second region overlapping the second end in a top view from the light incident surface side. A concentration of a second conductivity type impurity is lower in the fourth semiconductor region than in the in-pixel separation portion.

Abstract: A photoelectric conversion apparatus includes a first substrate having a first semiconductor device layer including a plurality of photoelectric conversion units and a well, and a second substrate having a second semiconductor device layer including a circuit configured to process signals obtained by the plurality of photoelectric conversion units, wherein the first and second substrates are laminated together, wherein the first semiconductor device layer includes an effective pixel region, an optical black pixel region, and an outer periphery region, wherein, in a planar view, a light-blocking region formed by a light-blocking layer overlaps the optical black pixel region, and the light-blocking region does not overlap the outer periphery region, wherein the outer periphery region has a charge draining region including a semiconductor region of the same conductivity type as a signal charge, and wherein a fixed potential is supplied to the charge draining region.

Abstract: A solid-state imaging device including a plurality of pixels including a photoelectric conversion portion, a charge holding portion accumulating a signal charge transferred from the photoelectric conversion portion, and a floating diffusion region to which the signal charge of the charge holding portion is transferred, wherein the photoelectric conversion portion includes a first semiconductor region of a first conductivity type, and a second semiconductor region of a second conductivity type formed under the first semiconductor region, the charge holding portion includes a third semiconductor region of the first conductivity type, and a fourth semiconductor region of the second conductivity type formed under the third semiconductor region, and a p-n junction between the third semiconductor region and the fourth semiconductor region is positioned deeper than a p-n junction between the first semiconductor region and the second semiconductor region.

Abstract: To effectively improve drivability during travel control, provided is a vehicle control device comprising a travel control unit configured to set a target acceleration of the vehicle based on a target vehicle speed and an actual vehicle speed, and execute a travel control for automatically controlling travel of the vehicle by operating the drive device based on the target acceleration; a shift control unit configured to set a target driving force, and execute a shift control for operating the transmission device based on the target driving force; and a downshift suppression control unit configured to acquire an actual acceleration during execution of the travel control and suppress execution of downshift of the transmission device by the shift control unit based on an acceleration threshold value.

Abstract: A technique advantageous for improving an optical property of a photoelectric conversion apparatus is provided. The photoelectric conversion apparatus includes a photoelectric conversion layer and a light-shielding film that covers the photoelectric conversion layer, wherein the light-shielding film includes one metallic layer and another metallic layer located between the one metallic layer and the photoelectric conversion layer.

Abstract: A photoelectric conversion apparatus includes a semiconductor substrate, a floating diffusion, an amplifying transistor, first and second contact plugs, a wire, and a metal portion. The semiconductor substrate has a first plane and a second plane to be entered by light, and includes a photoelectric conversion element. The amplifying transistor includes a first gate electrode. The first contact plug is connected to the floating diffusion. The second contact plug is connected to the first gate electrode. The wire is configured to electrically connect the first gate electrode and the floating diffusion to each other. The metal portion, which is arranged between the first plane and a third plane, covers at least a part of the photoelectric conversion element in a planar view, and has an opening over which at least a part of the wire is superimposed in a planar view.

Abstract: A semiconductor apparatus including: a first substrate; a first wiring structure; a second substrate; and a second wiring structure, wherein the first wiring structure has a first wiring layer bonded to wiring of the second wiring structure, a second wiring layer connected to the first wiring layer by a first via, and a third wiring layer connected to the second wiring layer by a second via, at least part of the second via is located at a range distanced, by at least a width of the first via, from an axis of the first via, a thickness of the second wiring layer is less than the width of the first via, a major constituent of the first wiring layer, the second wiring layer and the first via is copper, and a layer that is made from a material different from copper is disposed between the first via and the second wiring layer.

Abstract: A photoelectric conversion device includes a photoelectric converter, a first node configured to be supplied with charges from the photoelectric converter, an amplification transistor configured to output a signal corresponding to a voltage of the first node, a first transistor configured to open/close a path between the first node and a second node not included in a path from the photoelectric converter to the first node, and a second transistor configured to open/close a path between the second node and a third node. A second capacitance which is added to the second node when the second transistor is set in a conductive state is larger than a first capacitance which is added to the first node when the first transistor is set in a conductive state.

Abstract: A photoelectric conversion device includes a photoelectric converter, a first node configured to be supplied with charges from the photoelectric converter, an amplification transistor configured to output a signal corresponding to a voltage of the first node, a first transistor configured to open/close a path between the first node and a second node not included in a path from the photoelectric converter to the first node, and a second transistor configured to open/close a path between the second node and a third node. A second capacitance which is added to the second node when the second transistor is set in a conductive state is larger than a first capacitance which is added to the first node when the first transistor is set in a conductive state.

Abstract: An inventive solid-state imaging apparatus is provided which can improve the efficiency of the electric carrier transfer from a photoelectric conversion portion to an electric-carrier accumulation portion. The solid-state imaging apparatus includes an active region having the photoelectric conversion portion, the electric-carrier accumulation portion, and a floating diffusion, and an element isolation region having an insulator defining the active region. In planer view, the width of the active region in the electric-carrier accumulation portion under a gate of the first transfer transistor is larger than the width of the active region in the photoelectric conversion portion under the gate of the first transfer transistor.

Abstract: In an imaging device, a photoelectric converter of a first pixel and a photoelectric converter of a second pixel are arranged along a first direction. At least part of a charge accumulation portion of the first pixel is disposed between the photoelectric converter of the first pixel and the photoelectric converter of the second pixel. An exit surface of a light guiding path of the first pixel is longer in a second direction orthogonal to the first direction in plan view than in the first direction.

Abstract: In an imaging device, a photoelectric converter of a first pixel and a photoelectric converter of a second pixel are arranged along a first direction. At least part of a charge accumulation portion of the first pixel is disposed between the photoelectric converter of the first pixel and the photoelectric converter of the second pixel. An exit surface of a light guiding path of the first pixel is longer in a second direction orthogonal to the first direction in plan view than in the first direction.

Abstract: An apparatus includes pixels each including a conversion unit. The conversion unit includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, and a third semiconductor region of the first conductivity type in order from a light incident surface side, and includes an in-pixel separation portion of the second conductivity type. The second semiconductor region includes a first end and a second end opposing the first end. The conversion unit further includes a fourth semiconductor region between the first and second ends. The in-pixel separation portion separates the first semiconductor region into a first region overlapping the first end and a second region overlapping the second end in a top view from the light incident surface side. A concentration of a second conductivity type impurity is lower in the fourth semiconductor region than in the in-pixel separation portion.