Abstract: A photoelectric conversion device includes a photoelectric converter, a first node configured to be supplied with charges from the photoelectric converter, an amplification transistor configured to output a signal corresponding to a voltage of the first node, a first transistor configured to open/close a path between the first node and a second node not included in a path from the photoelectric converter to the first node, and a second transistor configured to open/close a path between the second node and a third node. A second capacitance which is added to the second node when the second transistor is set in a conductive state is larger than a first capacitance which is added to the first node when the first transistor is set in a conductive state.

Abstract: A photoelectric conversion apparatus includes a first chip having a first semiconductor element layer including a pixel region of a plurality of pixel circuits, and a second chip having a second semiconductor element layer. The first and second chips are bonded by a plurality of metal bonding portions between the first and second semiconductor element layers. The plurality of metal bonding portions includes first and second metal bonding portions disposed in a region overlapping with the pixel region in a plan view. The first metal bonding portion connects at least either one of the plurality of pixel circuits and the second semiconductor element layer. The second metal bonding portion is connected to at least either one of the plurality of pixel circuits and is not connected to the second semiconductor element layer in the region overlapping with the pixel region.

Abstract: There is provided a photoelectric conversion device including a photoelectric conversion unit, a floating diffusion, an amplification transistor, a capacitance addition transistor electrically connected to the floating diffusion. The photoelectric conversion device further includes a metal-oxide semiconductor (MOS) capacitive element and a wiring capacitive element that are electrically connected to the floating diffusion via the capacitance addition transistor.

Abstract: According to an aspect of the disclosure of this specification, a photoelectric conversion apparatus includes a first semiconductor substrate, a first wiring structure, a second wiring structure, and a second semiconductor substrate, wherein the first semiconductor substrate includes a protection element and a plurality of pixels arranged in a row direction and a column direction, wherein a signal is supplied from the second semiconductor substrate to a gate electrode of a transistor, wherein the first wiring structure includes a first wiring line extending in at least one of the row direction and the column direction in such a manner as to overlap two or more pixels in a planar view, the signal passing through the first wiring line, wherein the first wiring line and the protection element are connected, and wherein a reverse bias voltage is applied to a diode constituting the protection element.

Abstract: A photoelectric conversion apparatus according to an embodiment includes a first chip and a second chip. The first chip includes a first semiconductor element layer having a pixel region having pixel circuits and a peripheral region and a first wiring structure including a first wiring layer. The second chip includes a second semiconductor element layer having an electric circuit and a second wiring structure. The first and second chips are stacked, and have a trench extending through the first semiconductor element layer and having a pad through which a reference potential is supplied to the pixel circuits. The first wiring layer includes a first wiring pattern to which the reference potential is supplied. In plan view, the first wiring pattern located in a region aligned with the pixel region has a higher wiring density than the first wiring pattern located in a region aligned with the peripheral region.

Abstract: A global shutter type photoelectric conversion apparatus includes a first pixel and a second pixel adjacent to each other in a first direction. In the first pixel, a photoelectric conversion unit, a first charge holding unit, and a second charge holding unit are arranged to satisfy L1<L2, where L1 denotes a distance from an optical center of the photoelectric conversion unit to a centroid of the first charge holding unit, and L2 denotes a distance from the optical center of the photoelectric conversion unit to a centroid of the second charge holding unit. A photoelectric conversion unit of the second pixel, the first charge holding unit of the first pixel, and the second charge holding unit of the first pixel are arranged to satisfy L3<L4.

Abstract: Provided is a photoelectric conversion device including a pixel array including a first pixel and a second pixel. The first pixel includes a photoelectric conversion unit including a first semiconductor region of a first conductivity type as a charge accumulation layer and photoelectrically converts incident light to generate a signal in accordance with the incident light, and the second pixel includes a second semiconductor region of the first conductivity type and a transistor including a first main electrode formed by a third semiconductor region connected to the second semiconductor region and a gate.

Abstract: An apparatus includes a plurality of pixels, a plurality of signal lines, and first connection wiring. Each of the plurality of pixels includes a photoelectric conversion unit and a selection unit. The plurality of signal lines includes a first group including a first signal line connected to a first pixel, a second group including a second signal line connected to a second pixel, and a second group including a third signal line connected to a third pixel. First shield wiring to which a fixed potential is supplied is located between the first group and the second group including the third signal line. The first connection wiring overlaps the first group and not the second group including the second signal line in a plan view.

Abstract: An apparatus includes a plurality of pixels arranged in an array, wherein each of the plurality of pixels includes a plurality of conversion units that share a microlens, wherein the plurality of conversion units of a first pixel of the plurality of pixels is separated in a first direction, wherein the plurality of conversion units of a second pixel of the plurality of pixels is separated in a second direction, wherein a floating diffusion is arranged in one of a position between columns and a position between rows of the conversion units included in the plurality of pixels, and wherein a well contact is arranged in the other of the position between columns and the position between rows of the conversion units included in the plurality of pixels.

Abstract: A photoelectric conversion device includes a pixel including a photoelectric conversion unit configured to generate charge by photoelectric conversion, a floating diffusion configured to hold charge transferred from the photoelectric conversion unit, and an output unit configured to output a signal corresponding to an amount of charge held in the floating diffusion, the pixel being enabled to switch a capacitance value of the floating diffusion, and a control unit configured to switch the capacitance value of the floating diffusion. The control unit is configured to set the floating diffusion to a first capacitance value when an absolute value of a power supply voltage supplied to the output unit is a first voltage and set the floating diffusion to a second capacitance value larger than the first capacitance value when the absolute value of the power supply voltage is a second voltage lower than the first voltage.

Abstract: Provided is a photoelectric conversion device including a pixel array including a first pixel and a second pixel. The first pixel includes a photoelectric conversion unit including a first semiconductor region of a first conductivity type as a charge accumulation layer and photoelectrically converts incident light to generate a signal in accordance with the incident light, and the second pixel includes a second semiconductor region of the first conductivity type and a transistor including a first main electrode formed by a third semiconductor region connected to the second semiconductor region and a gate.

Abstract: A photoelectric conversion apparatus includes a first substrate having a first semiconductor device layer including a plurality of photoelectric conversion units and a well, and a second substrate having a second semiconductor device layer including a circuit configured to process signals obtained by the plurality of photoelectric conversion units, wherein the first and second substrates are laminated together, wherein the first semiconductor device layer includes an effective pixel region, an optical black pixel region, and an outer periphery region, wherein, in a planar view, a light-blocking region formed by a light-blocking layer overlaps the optical black pixel region, and the light-blocking region does not overlap the outer periphery region, wherein the outer periphery region has a charge draining region including a semiconductor region of the same conductivity type as a signal charge, and wherein a fixed potential is supplied to the charge draining region.

Abstract: A photoelectric conversion device includes a photoelectric converter, a first node configured to be supplied with charges from the photoelectric converter, an amplification transistor configured to output a signal corresponding to a voltage of the first node, a first transistor configured to open/close a path between the first node and a second node not included in a path from the photoelectric converter to the first node, and a second transistor configured to open/close a path between the second node and a third node. A second capacitance which is added to the second node when the second transistor is set in a conductive state is larger than a first capacitance which is added to the first node when the first transistor is set in a conductive state.

Abstract: An apparatus includes a plurality of pixels arranged in a substrate including a first surface provided with a transistor and a second surface opposed to the first surface, and a light shielding portion. The plurality of pixels includes first pixels shielded from light, and second pixels. Each of the plurality of pixels includes a first area of a first conductive type. Each of the first pixels includes a second area. Each of the second pixels includes a third area between the second surface and the first area, and includes a fourth area of a second conductive type between the first area and the first surface. In a cross-section along a first line, an impurity concentration of the first conductive type in the second area is higher than an impurity concentration of the first conductive type in the third area.

Abstract: A photoelectric conversion device includes a photoelectric converter, a first node configured to be supplied with charges from the photoelectric converter, an amplification transistor configured to output a signal corresponding to a voltage of the first node, a first transistor configured to open/close a path between the first node and a second node not included in a path from the photoelectric converter to the first node, and a second transistor configured to open/close a path between the second node and a third node. A second capacitance which is added to the second node when the second transistor is set in a conductive state is larger than a first capacitance which is added to the first node when the first transistor is set in a conductive state.

Abstract: To effectively improve drivability during travel control, provided is a vehicle control device comprising a travel control unit configured to set a target acceleration of the vehicle based on a target vehicle speed and an actual vehicle speed, and execute a travel control for automatically controlling travel of the vehicle by operating the drive device based on the target acceleration; a shift control unit configured to set a target driving force, and execute a shift control for operating the transmission device based on the target driving force; and a downshift suppression control unit configured to acquire an actual acceleration during execution of the travel control and suppress execution of downshift of the transmission device by the shift control unit based on an acceleration threshold value.

Abstract: An apparatus includes pixels each including a conversion unit. The conversion unit includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, and a third semiconductor region of the first conductivity type in order from a light incident surface side, and includes an in-pixel separation portion of the second conductivity type. The second semiconductor region includes a first end and a second end opposing the first end. The conversion unit further includes a fourth semiconductor region between the first and second ends. The in-pixel separation portion separates the first semiconductor region into a first region overlapping the first end and a second region overlapping the second end in a top view from the light incident surface side. A concentration of a second conductivity type impurity is lower in the fourth semiconductor region than in the in-pixel separation portion.

Abstract: A photoelectric conversion apparatus includes a first substrate having a first semiconductor device layer including a plurality of photoelectric conversion units and a well, and a second substrate having a second semiconductor device layer including a circuit configured to process signals obtained by the plurality of photoelectric conversion units, wherein the first and second substrates are laminated together, wherein the first semiconductor device layer includes an effective pixel region, an optical black pixel region, and an outer periphery region, wherein, in a planar view, a light-blocking region formed by a light-blocking layer overlaps the optical black pixel region, and the light-blocking region does not overlap the outer periphery region, wherein the outer periphery region has a charge draining region including a semiconductor region of the same conductivity type as a signal charge, and wherein a fixed potential is supplied to the charge draining region.

Abstract: A solid-state imaging device including a plurality of pixels including a photoelectric conversion portion, a charge holding portion accumulating a signal charge transferred from the photoelectric conversion portion, and a floating diffusion region to which the signal charge of the charge holding portion is transferred, wherein the photoelectric conversion portion includes a first semiconductor region of a first conductivity type, and a second semiconductor region of a second conductivity type formed under the first semiconductor region, the charge holding portion includes a third semiconductor region of the first conductivity type, and a fourth semiconductor region of the second conductivity type formed under the third semiconductor region, and a p-n junction between the third semiconductor region and the fourth semiconductor region is positioned deeper than a p-n junction between the first semiconductor region and the second semiconductor region.

Abstract: A photoelectric conversion apparatus includes a first substrate having a first semiconductor element layer including a plurality of photoelectric conversion units, and a second substrate having a second semiconductor element layer. The first and second substrates are laminated. The first semiconductor element layer has an effective pixel region, an optical black (OB) pixel region, and an outer periphery region. The effective pixel region includes a photoelectric conversion unit having a larger light-shielded area than other photoelectric conversion units out of the plurality of photoelectric conversion units. The OB pixel region overlaps with a light-shielding region, but the outer periphery region does not overlap with the light-shielding region in a planar view. The outer periphery region is provided with an electric charge discharge region including a semiconductor region of the same conductivity type as signal electric charges. The electric charge discharge region is supplied with a fixed potential.