Patents by Inventor Yusuke Onuki

Yusuke Onuki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10848695
    Abstract: A solid state imaging device as an embodiment has a first transfer unit that includes a first gate and transfers charges from a photoelectric conversion portion to a holding portion; a second transfer unit that includes a second gate and transfers charges from the holding portion to a floating diffusion portion; and a third transfer unit that includes a third gate and drains charges from the photoelectric conversion portion to the charge draining portion. The impurity concentration of a second conductivity type in at least a part of a region under the first gate of the first transfer unit is lower than the impurity concentration of the second conductivity type in a region under the second gate of the second transfer unit and the impurity concentration of the second conductivity type in a region under the third gate of the third transfer unit.
    Type: Grant
    Filed: January 16, 2018
    Date of Patent: November 24, 2020
    Assignee: CANON KABUSHIKI KAISHA
    Inventors: Takafumi Miki, Masahiro Kobayashi, Yusuke Onuki, Hiroshi Sekine
  • Patent number: 10833111
    Abstract: An inventive solid-state imaging apparatus is provided which can improve the efficiency of the electric carrier transfer from a photoelectric conversion portion to an electric-carrier accumulation portion. The solid-state imaging apparatus includes an active region having the photoelectric conversion portion, the electric-carrier accumulation portion, and a floating diffusion, and an element isolation region having an insulator defining the active region. In planer view, the width of the active region in the electric-carrier accumulation portion under a gate of the first transfer transistor is larger than the width of the active region in the photoelectric conversion portion under the gate of the first transfer transistor.
    Type: Grant
    Filed: January 25, 2019
    Date of Patent: November 10, 2020
    Assignee: CANON KABUSHIKI KAISHA
    Inventors: Yusuke Onuki, Masahiro Kobayashi, Takafumi Miki
  • Publication number: 20200335547
    Abstract: A photoelectric conversion apparatus includes a plurality of units each including a charge generation region disposed in a semiconductor layer. Each of a first unit and a second unit of the plurality of units includes a charge storage region configured to store charges transferred thereto from the charge generation region, a dielectric region located above the charge generation region and surrounded by an insulator layer, and a first light-shielding layer covering the charge storage region that is located between the insulator layer and the semiconductor layer, and the first light-shielding layer having an opening located above the charge generation region. The charge generation region of the first unit is able to receive light through the opening of the first light-shielding layer. The charge generation region of the second unit is covered with a second light-shielding layer.
    Type: Application
    Filed: July 6, 2020
    Publication date: October 22, 2020
    Inventors: Yu Nishimura, Sho Suzuki, Yasushi Matsuno, Yusuke Onuki, Masahiro Kobayashi, Takashi Okagawa, Yoshiyuki Nakagawa
  • Publication number: 20200328245
    Abstract: A solid-state image pickup device is provided which can inhibit degradation of image quality which may occur when a global electronic shutter operation is performed. A gate drive line for a first transistor of gate drive lines for pixel transistors is positioned in proximity to a converting unit.
    Type: Application
    Filed: June 29, 2020
    Publication date: October 15, 2020
    Inventors: Masahiro Kobayashi, Yusuke Onuki, Toru Koizumi
  • Patent number: 10805563
    Abstract: According to an aspect of the present invention, provided is a solid state imaging device including a plurality of pixels, and each of the pixels has a charge accumulation region of a first conductivity type that accumulates signal charges corresponding to an incident light, a drain region of the first conductivity type to which a predetermined voltage is applied, a drain gate located between the drain region and the charge accumulation region in a planar view, and a semiconductor region of the first conductivity type connected to the charge accumulation region and the drain region.
    Type: Grant
    Filed: July 19, 2018
    Date of Patent: October 13, 2020
    Assignee: CANON KABUSHIKI KAISHA
    Inventors: Hajime Ikeda, Masahiro Kobayashi, Hiroshi Sekine, Yusuke Onuki
  • Patent number: 10771718
    Abstract: An imaging device includes pixels including a photoelectric conversion unit, a holding unit holding charge transferred from the photoelectric conversion unit, and an amplifier unit outputting signal based on the charge. The pixels output a first signal based on charge generated in a first exposure period and a second signal based on charge generated in a second exposure period of different length. In the first exposure period, the photoelectric conversion unit accumulates the generated charge, and charge held by the holding unit is transferred to the amplifier unit. The second exposure period includes a period of accumulating the generated charge only in the photoelectric conversion unit and a period of holding the generated charge in the photoelectric conversion unit and the holding unit. In the period of accumulating the generated charge only in the photoelectric conversion unit, the charge held by the holding unit is transferred to the amplifier unit.
    Type: Grant
    Filed: December 27, 2018
    Date of Patent: September 8, 2020
    Assignee: CANON KABUSHIKI KAISHA
    Inventors: Kazunari Kawabata, Takeshi Ichikawa, Masahiro Kobayashi, Yusuke Onuki, Hiroshi Sekine
  • Patent number: 10764520
    Abstract: A disclosed embodiment includes: semiconductor substrate including a pixel region in which a plurality of pixels are arranged, each of the pixels including a photoelectric conversion unit configured to accumulate charges generated from an incident light, a charge holding portion configured to hold the charges transferred from the photoelectric conversion unit, and an amplification unit including an input node configured to receive the charges transferred from the charge holding portion; a light-shielding portion arranged so as to cover at least the charge holding portion and extending over at least two or more of the plurality of pixels; a contact plug connected to the light-shielding portion; and a wiring connected to the contact plug to supply a fixed potential to the light-shielding portion via the contact plug.
    Type: Grant
    Filed: January 16, 2018
    Date of Patent: September 1, 2020
    Assignee: CANON KABUSHIKI KAISHA
    Inventors: Yusuke Onuki, Yasushi Matsuno, Takafumi Miki
  • Patent number: 10763298
    Abstract: A photoelectric conversion apparatus includes a plurality of units each including a charge generation region disposed in a semiconductor layer. Each of a first unit and a second unit of the plurality of units includes a charge storage region configured to store charges transferred thereto from the charge generation region, a dielectric region located above the charge generation region and surrounded by an insulator layer, and a first light-shielding layer covering the charge storage region that is located between the insulator layer and the semiconductor layer, and the first light-shielding layer having an opening located above the charge generation region. The charge generation region of the first unit is able to receive light through the opening of the first light-shielding layer. The charge generation region of the second unit is covered with a second light-shielding layer.
    Type: Grant
    Filed: October 24, 2017
    Date of Patent: September 1, 2020
    Assignee: CANON KABUSHIKI KAISHA
    Inventors: Yu Nishimura, Sho Suzuki, Yasushi Matsuno, Yusuke Onuki, Masahiro Kobayashi, Takashi Okagawa, Yoshiyuki Nakagawa
  • Patent number: 10748954
    Abstract: A solid-state image pickup device is provided which can inhibit degradation of image quality which may occur when a global electronic shutter operation is performed. A gate drive line for a first transistor of gate drive lines for pixel transistors is positioned in proximity to a converting unit.
    Type: Grant
    Filed: February 21, 2020
    Date of Patent: August 18, 2020
    Assignee: CANON KABUSHIKI KAISHA
    Inventors: Masahiro Kobayashi, Yusuke Onuki, Toru Koizumi
  • Publication number: 20200227457
    Abstract: In an imaging device, a photoelectric converter of a first pixel and a photoelectric converter of a second pixel are arranged along a first direction. At least part of a charge accumulation portion of the first pixel is disposed between the photoelectric converter of the first pixel and the photoelectric converter of the second pixel. An exit surface of a light guiding path of the first pixel is longer in a second direction orthogonal to the first direction in plan view than in the first direction.
    Type: Application
    Filed: March 30, 2020
    Publication date: July 16, 2020
    Inventors: Hiroshi Sekine, Yusuke Onuki, Kazunari Kawabata
  • Patent number: 10704977
    Abstract: A pressure sensor includes a connection portion provided with a screw portion configured to fix the pressure sensor to a combustion chamber of a vehicle engine; a hollow liquid-enclosing container fixed to one end of the connection portion; a pressure transmission fluid enclosed inside the liquid-enclosing container; a diaphragm fixed to one end of the liquid-enclosing container and elastically deformed when receiving pressure to transmit the pressure to the pressure transmission fluid; a pressure detection element fixed to the other end of the liquid-enclosing container and detecting the pressure transmitted to the pressure transmission fluid and converts the detected pressure into an electric signal; and a heat-dissipating rod provided inside the liquid-enclosing container. The connection portion and the liquid-enclosing container, and the connection portion and the diaphragm are mechanically connected to each other by welding or the like.
    Type: Grant
    Filed: April 26, 2017
    Date of Patent: July 7, 2020
    Assignee: Hitachi Automotive Systems, Ltd.
    Inventors: Yusuke Kaga, Tomonari Misawa, Kousaku Morita, Hiroshi Onuki
  • Publication number: 20200194487
    Abstract: A solid-state image pickup device is provided which can inhibit degradation of image quality which may occur when a global electronic shutter operation is performed. A gate drive line for a first transistor of gate drive lines for pixel transistors is positioned in proximity to a converting unit.
    Type: Application
    Filed: February 21, 2020
    Publication date: June 18, 2020
    Inventors: Masahiro Kobayashi, Yusuke Onuki, Toru Koizumi
  • Publication number: 20200194483
    Abstract: An imaging apparatus includes a plurality of pixels each including a photoelectric conversion unit and a charge holding unit configured to hold an electric charge generated in the photoelectric conversion unit, a waveguide disposed above the photoelectric conversion unit, and a light blocking unit configured to cover the charge holding unit, wherein a width of a bottom surface of the waveguide is smaller than 1.1 ?m.
    Type: Application
    Filed: February 27, 2020
    Publication date: June 18, 2020
    Inventors: Hiroshi Sekine, Yusuke Onuki
  • Publication number: 20200176491
    Abstract: A photoelectric conversion apparatus includes a first semiconductor region of a first conductivity type at a first depth from a first surface, a second semiconductor region of a second conductivity type disposed at a second depth deeper than the first depth from the first surface so as to be in contact with the first semiconductor region, and a third semiconductor region of the second conductivity type extending from the first surface to a third depth shallower than the second depth and being in contact with the first semiconductor region and the second semiconductor region. The third semiconductor region has a higher impurity concentration than the second semiconductor region. A second electric potential lower than the first electric potential for a carrier of the first conductivity type is applied to the third semiconductor region. The second semiconductor region has an impurity concentration of 1×1012 [atom/cm3] or less.
    Type: Application
    Filed: November 22, 2019
    Publication date: June 4, 2020
    Inventors: Hajime Ikeda, Yusuke Onuki
  • Publication number: 20200176490
    Abstract: A photoelectric conversion device includes a first semiconductor region, a second semiconductor region, and a third semiconductor region. The first semiconductor region is of a first conductivity type provided at a position at which a depth from a first face is a first depth. The second semiconductor region is of the second conductivity type provided at a second depth deeper than the first depth, contacting with the first semiconductor region, and applied with a first electric potential from a second face side. The third semiconductor region is of the second conductivity type extending from the first depth to a third depth shallower than the second depth, contacting with the first and second semiconductor regions. The third semiconductor region has a higher impurity concentration than the second semiconductor region, and is applied with a second electric potential lower than the first electric potential.
    Type: Application
    Filed: November 20, 2019
    Publication date: June 4, 2020
    Inventors: Hajime Ikeda, Yusuke Onuki
  • Patent number: 10644049
    Abstract: In an imaging device, a photoelectric converter of a first pixel and a photoelectric converter of a second pixel are arranged along a first direction. At least part of a charge accumulation portion of the first pixel is disposed between the photoelectric converter of the first pixel and the photoelectric converter of the second pixel. An exit surface of a light guiding path of the first pixel is longer in a second direction orthogonal to the first direction in plan view than in the first direction.
    Type: Grant
    Filed: December 15, 2017
    Date of Patent: May 5, 2020
    Assignee: CANON KABUSHIKI KAISHA
    Inventors: Hiroshi Sekine, Yusuke Onuki, Kazunari Kawabata
  • Publication number: 20200135786
    Abstract: A photoelectric conversion apparatus includes a semiconductor substrate, a floating diffusion, an amplifying transistor, first and second contact plugs, a wire, and a metal portion. The semiconductor substrate has a first plane and a second plane to be entered by light, and includes a photoelectric conversion element. The amplifying transistor includes a first gate electrode. The first contact plug is connected to the floating diffusion. The second contact plug is connected to the first gate electrode. The wire is configured to electrically connect the first gate electrode and the floating diffusion to each other. The metal portion, which is arranged between the first plane and a third plane, covers at least a part of the photoelectric conversion element in a planar view, and has an opening over which at least a part of the wire is superimposed in a planar view.
    Type: Application
    Filed: October 23, 2019
    Publication date: April 30, 2020
    Inventors: Yusuke Onuki, Fumihiro Inui
  • Publication number: 20200111828
    Abstract: An imaging device includes pixels each including a photoelectric converter that generates charges by photoelectric conversion, a first transfer transistor that transfers charges of the photoelectric converter to a first holding portion, a second transfer transistor that transfers charges of the first holding portion to a second holding portion, and an amplifier unit that outputs a signal based on charges held by the second holding portion. The first transfer transistor is configured to form a potential well for the charges between the photoelectric converter and the first holding portion when the first transistor is in an on-state. The maximum charge amount QPD generated by the photoelectric converter during one exposure period, a saturation charge amount QMEM_SAT of the first holding portion, and the maximum charge amount QGS that can be held in the potential well are in a relationship of: QPD<QGS?QMEM_SAT.
    Type: Application
    Filed: December 9, 2019
    Publication date: April 9, 2020
    Inventors: Yusuke Onuki, Mahito Shinohara, Hajime Ikeda, Takafumi Miki, Hiroshi Sekine
  • Patent number: 10615205
    Abstract: An imaging apparatus includes a plurality of pixels each including a photoelectric conversion unit and a charge holding unit configured to hold an electric charge generated in the photoelectric conversion unit, a waveguide disposed above the photoelectric conversion unit, and a light blocking unit configured to cover the charge holding unit, wherein a width of a bottom surface of the waveguide is smaller than 1.1 ?m.
    Type: Grant
    Filed: May 17, 2018
    Date of Patent: April 7, 2020
    Assignee: Canon Kabushiki Kaisha
    Inventors: Hiroshi Sekine, Yusuke Onuki
  • Patent number: 10608038
    Abstract: A solid-state image pickup device is provided which can inhibit degradation of image quality which may occur when a global electronic shutter operation is performed. A gate drive line for a first transistor of gate drive lines for pixel transistors is positioned in proximity to a converting unit.
    Type: Grant
    Filed: January 22, 2018
    Date of Patent: March 31, 2020
    Assignee: CANON KABUSHIKI KAISHA
    Inventors: Masahiro Kobayashi, Yusuke Onuki, Toru Koizumi