Abstract: An imaging device includes pixels each including a photoelectric converter that generates charges by photoelectric conversion, a first transfer transistor that transfers charges of the photoelectric converter to a first holding portion, a second transfer transistor that transfers charges of the first holding portion to a second holding portion, and an amplifier unit that outputs a signal based on charges held by the second holding portion. The first transfer transistor is configured to form a potential well for the charges between the photoelectric converter and the first holding portion when the first transistor is in an on-state. The maximum charge amount QPD generated by the photoelectric converter during one exposure period, a saturation charge amount QMEM_SAT of the first holding portion, and the maximum charge amount QGS that can be held in the potential well are in a relationship of: QPD<QGS?QMEM_SAT.

Abstract: A solid-state image pickup apparatus includes a photoelectric conversion unit, a charge storage unit, and a floating diffusion unit, all disposed on a semiconductor substrate. The solid-state image pickup apparatus further includes a first gate electrode disposed on the semiconductor substrate and extending between the photoelectric conversion unit and charge storage unit, and a second gate electrode disposed on the semiconductor substrate and extending between the charge storage unit and the floating diffusion unit. The solid-state image pickup apparatus further includes a light shielding member including a first part and a second part, wherein the first part is disposed over the charge storage unit and at least over the first gate electrode or the second gate electrode, and the second part is disposed between the first gate electrode and the second gate electrode such that the second part extends from the first part toward a surface of the semiconductor substrate.

Abstract: An image pickup apparatus performs a global electronic shutter operation in which exposure periods of a plurality of pixels coincide with one another. In a first period in which a photoelectric conversion unit of at least one of the pixels stores charge, signals based on charges stored in holding units of the pixels are successively output to output lines. In a second period after the output of the signals from the pixels is terminated, the holding units of the pixels hold charge.

Abstract: A manufacturing method includes a first process for forming a first gate electrode for a first MOS transistor and a second gate electrode for a second MOS transistor on a substrate including a semiconductor region defined by an insulator region for element isolation, a second process for masking a portion located above the semiconductor region of the first gate electrode to introduce an impurity to a source-drain region of the first MOS transistor, and a third process for forming a first conductor member being in contact with the portion of the first gate electrode through a first hole disposed on an insulator member covering the substrate and a second conductor member being in contact with the second gate electrode through a second hole disposed on the insulator member.

Abstract: Respective first signal holding units of a plurality of sets are commonly connected to an input node of an amplification unit of one set via a second transfer unit of a set to which the first signal holding unit corresponds, and respective second signal holding units of the plurality of sets are commonly connected to the input node of the amplification unit of one set via a fourth transfer unit of a set to which the second signal holding unit corresponds.

Abstract: An inventive solid-state imaging apparatus is provided which can improve the efficiency of the electric carrier transfer from a photoelectric conversion portion to an electric-carrier accumulation portion. The solid-state imaging apparatus includes an active region having the photoelectric conversion portion, the electric-carrier accumulation portion, and a floating diffusion, and an element isolation region having an insulator defining the active region. In planer view, the width of the active region in the electric-carrier accumulation portion under a gate of the first transfer transistor is larger than the width of the active region in the photoelectric conversion portion under the gate of the first transfer transistor.

Abstract: An imaging device includes pixels including a photoelectric conversion unit, a holding unit holding charge transferred from the photoelectric conversion unit, and an amplifier unit outputting signal based on the charge. The pixels output a first signal based on charge generated in a first exposure period and a second signal based on charge generated in a second exposure period of different length. In the first exposure period, the photoelectric conversion unit accumulates the generated charge, and charge held by the holding unit is transferred to the amplifier unit. The second exposure period includes a period of accumulating the generated charge only in the photoelectric conversion unit and a period of holding the generated charge in the photoelectric conversion unit and the holding unit. In the period of accumulating the generated charge only in the photoelectric conversion unit, the charge held by the holding unit is transferred to the amplifier unit.

Abstract: A manufacturing method includes a first process for forming a first gate electrode for a first MOS transistor and a second gate electrode for a second MOS transistor on a substrate including a semiconductor region defined by an insulator region for element isolation, a second process for masking a portion located above the semiconductor region of the first gate electrode to introduce an impurity to a source-drain region of the first MOS transistor, and a third process for forming a first conductor member being in contact with the portion of the first gate electrode through a first hole disposed on an insulator member covering the substrate and a second conductor member being in contact with the second gate electrode through a second hole disposed on the insulator member.

Abstract: Provided are a solid-state image pickup apparatus which includes: a semiconductor substrate having a plurality of photoelectric converters; a first and a second insulating layers formed on the semiconductor substrate; an optical waveguide formed above each of the plurality of photoelectric converters and in an opening portion of the first and the second insulating layers, and has a refractive index higher than a refractive index of the first insulating layer; and a light reflecting layer formed at a boundary between the optical waveguide and the second insulating layer, and has a refractive index lower than a refractive index of the optical waveguide, where the following expression is satisfied: ?<90°, where a represents an angle formed by a boundary surface between the light reflecting layer and the second insulating layer with respect to a boundary surface between the first insulating layer and the second insulating layer.

Abstract: An inventive solid-state imaging apparatus is provided which can improve the efficiency of the electric carrier transfer from a photoelectric conversion portion to an electric-carrier accumulation portion. The solid-state imaging apparatus includes an active region having the photoelectric conversion portion, the electric-carrier accumulation portion, and a floating diffusion, and an element isolation region having an insulator defining the active region. In planer view, the width of the active region in the electric-carrier accumulation portion under a gate of the first transfer transistor is larger than the width of the active region in the photoelectric conversion portion under the gate of the first transfer transistor.

Abstract: An imaging device includes pixels including a photoelectric conversion unit, a holding unit holding charge transferred from the photoelectric conversion unit, and an amplifier unit outputting signal based on the charge. The pixels output a first signal based on charge generated in a first exposure period and a second signal based on charge generated in a second exposure period of different length. In the first exposure period, the photoelectric conversion unit accumulates the generated charge, and charge held by the holding unit is transferred to the amplifier unit. The second exposure period includes a period of accumulating the generated charge only in the photoelectric conversion unit and a period of holding the generated charge in the photoelectric conversion unit and the holding unit. In the period of accumulating the generated charge only in the photoelectric conversion unit, the charge held by the holding unit is transferred to the amplifier unit.

Abstract: According to an aspect of the present invention, provided is a solid state imaging device including a plurality of pixels, and each of the pixels has a charge accumulation region of a first conductivity type that accumulates signal charges corresponding to an incident light, a drain region of the first conductivity type to which a predetermined voltage is applied, a drain gate located between the drain region and the charge accumulation region in a planar view, and a semiconductor region of the first conductivity type connected to the charge accumulation region and the drain region.

Abstract: An image device transfers charges of a previous frame from the holding units to the amplification units, during a read-out period of each frame, the read-out period includes a period in which a plurality of overflow transistors are in an on-state and a first period in which a plurality of photoelectric conversion units accumulate charges, and, during a second period following the first period, the plurality of photoelectric conversion units of the plurality of pixels accumulate charges while the plurality of holding units of the plurality of pixels hold the charges accumulated during the first period. During the first and second periods, each of the plurality of pixels performs a plurality of times of charge transfers from the photoelectric conversion unit to the holding unit. The plurality of times of charge transfers including a charge transfer performed at the end of the second period.

Abstract: A photoelectric conversion portion, a charge holding portion, a transfer portion, and a sense node are formed in a P-type well. The charge holding portion is configured to include an N-type semiconductor region, which is a first semiconductor region holding charges in a portion different from the photoelectric conversion portion. A P-type semiconductor region having a higher concentration than the P-type well is disposed under the N-type semiconductor region.

Abstract: An imaging apparatus includes a photoelectric conversion unit of a first conductivity type, a charge holding unit of the first conductivity type, the charge holding unit being configured to hold electric charges transferred from the photoelectric conversion unit, a floating diffusion unit of the first conductivity type, the floating diffusion unit being configured to receive electric charges transferred from the charge holding unit, a punch-through prevention layer of a second conductivity type, the punch-through prevention layer being disposed between the charge holding unit and the floating diffusion unit to contact the floating diffusion unit, and a transfer assistance layer of the first conductivity type, the transfer assistance layer being disposed between the punch-through prevention layer and a surface of a semiconductor substrate.

Abstract: An imaging apparatus includes a plurality of pixels each including a photoelectric conversion unit and a charge holding unit configured to hold an electric charge generated in the photoelectric conversion unit, a waveguide disposed above the photoelectric conversion unit, and a light blocking unit configured to cover the charge holding unit, wherein a width of a bottom surface of the waveguide is smaller than 1.1 ?m.

Abstract: An imaging apparatus includes a plurality of groups one of a part of which has a capacitance changing unit configured to change a capacitance value of an input node.

Abstract: A solid-state imaging device including a plurality of pixels including a photoelectric conversion portion, a charge holding portion accumulating a signal charge transferred from the photoelectric conversion portion, and a floating diffusion region to which the signal charge of the charge holding portion is transferred, wherein the photoelectric conversion portion includes a first semiconductor region of a first conductivity type, and a second semiconductor region of a second conductivity type formed under the first semiconductor region, the charge holding portion includes a third semiconductor region of the first conductivity type, and a fourth semiconductor region of the second conductivity type formed under the third semiconductor region, and a p-n junction between the third semiconductor region and the fourth semiconductor region is positioned deeper than a p-n junction between the first semiconductor region and the second semiconductor region.

Abstract: The imaging device performs a global electronic shutter operation in which exposure periods of a plurality of pixels coincide with each other. In a first period during which a photoelectric conversion portion of at least one of the pixels accumulates an electric charge, signals based on electric charges held in holding portions of the plurality of pixels are sequentially output to an output line. During a second period after the output of the signals from the plurality of pixels is finished, the holding unit of each of the plurality of pixels holds an electric charge.

Abstract: A solid-state imaging device including a plurality of pixels including a photoelectric conversion portion, a charge holding portion accumulating a signal charge transferred from the photoelectric conversion portion, and a floating diffusion region to which the signal charge of the charge holding portion is transferred, wherein the photoelectric conversion portion includes a first semiconductor region of a first conductivity type, and a second semiconductor region of a second conductivity type formed under the first semiconductor region, the charge holding portion includes a third semiconductor region of the first conductivity type, and a fourth semiconductor region of the second conductivity type formed under the third semiconductor region, and a p-n junction between the third semiconductor region and the fourth semiconductor region is positioned deeper than a p-n junction between the first semiconductor region and the second semiconductor region.