Abstract: An imaging device includes pixels each including a photoelectric converter that generates charges by photoelectric conversion, a first transfer transistor that transfers charges of the photoelectric converter to a first holding portion, a second transfer transistor that transfers charges of the first holding portion to a second holding portion, and an amplifier unit that outputs a signal based on charges held by the second holding portion. The first transfer transistor is configured to form a potential well for the charges between the photoelectric converter and the first holding portion when the first transistor is in an on-state. The maximum charge amount QPD generated by the photoelectric converter during one exposure period, a saturation charge amount QMEM_SAT of the first holding portion, and the maximum charge amount QGS that can be held in the potential well are in a relationship of: QPD<QGS?QMEM_SAT.

Abstract: An imaging apparatus includes a plurality of pixels each including a photoelectric conversion unit and a charge holding unit configured to hold an electric charge generated in the photoelectric conversion unit, a waveguide disposed above the photoelectric conversion unit, and a light blocking unit configured to cover the charge holding unit, wherein a width of a bottom surface of the waveguide is smaller than 1.1 ?m.

Abstract: A solid-state image pickup device is provided which can inhibit degradation of image quality which may occur when a global electronic shutter operation is performed. A gate drive line for a first transistor of gate drive lines for pixel transistors is positioned in proximity to a converting unit.

Abstract: A silicon compound film that is any one of a silicon oxide film, a silicon nitride film, and a silicon carbide film, and a metal compound film lying between the silicon compound film and a semiconductor layer are arranged above a main face. The silicon compound film and the metal compound film extend into a first trench, and the metal compound film extends into a second trench. When a distance from the bottom of the second trench to the silicon compound film is expressed as “Hb”, and a distance from the main face to the silicon compound film is expressed as “Hd”, the respective distances satisfy the condition “Hd<Hb”.

Abstract: A back-side illuminated imaging device includes a substrate including a photoelectric conversion region, a contact plug connecting a wiring layer and the substrate, and a capacitive element including a first metal electrode and a second metal electrode disposed between the first metal electrode and the substrate. A distance between the second metal electrode and the substrate is shorter than a length of the contact plug. The second metal electrode overlaps at least a part of the photoelectric conversion region in a planar view with respect to a main surface of the substrate.

Abstract: A solid-state imaging device including a plurality of pixels including a photoelectric conversion portion, a charge holding portion accumulating a signal charge transferred from the photoelectric conversion portion, and a floating diffusion region to which the signal charge of the charge holding portion is transferred, wherein the photoelectric conversion portion includes a first semiconductor region of a first conductivity type, and a second semiconductor region of a second conductivity type formed under the first semiconductor region, the charge holding portion includes a third semiconductor region of the first conductivity type, and a fourth semiconductor region of the second conductivity type formed under the third semiconductor region, and a p-n junction between the third semiconductor region and the fourth semiconductor region is positioned deeper than a p-n junction between the first semiconductor region and the second semiconductor region.

Abstract: An imaging device includes pixels each including a photoelectric converter that generates charges by photoelectric conversion, a first transfer transistor that transfers charges of the photoelectric converter to a first holding portion, a second transfer transistor that transfers charges of the first holding portion to a second holding portion, and an amplifier unit that outputs a signal based on charges held by the second holding portion. The first transfer transistor is configured to form a potential well for the charges between the photoelectric converter and the first holding portion when the first transistor is in an on-state. The maximum charge amount QPD generated by the photoelectric converter during one exposure period, a saturation charge amount QMEM_SAT of the first holding portion, and the maximum charge amount QGS that can be held in the potential well are in a relationship of: QPD<QGS?QMEM_SAT.

Abstract: An image pickup apparatus according to the present invention includes a plurality of pixels arranged in rows and columns, and each of the pixels includes a photoelectric conversion unit that accumulates signal charge generated by photoelectric conversion of irradiated light, a first holding unit and a second holding unit that hold the signal charge transferred from the photoelectric conversion unit, and an output unit that outputs, to a column signal line, a signal based on an amount of the signal charge held by the first holding unit or the second holding unit. The first holding unit and the second holding unit alternately hold the signal charge generated in the photoelectric conversion unit for each frame period, and in a period in which the signal charge is not transferred from the photoelectric conversion unit, the first holding unit and the second holding unit output the signal charge to the output unit.

Abstract: A photoelectric conversion element includes a light guiding unit in which, on each of a first plane, a second plane, and a third plane, a first part of the light guiding unit and a second part of the light guiding unit, which is surrounded by the first part and a refractive index of which is lower than that of the first part, are included, a width of the second part on the first plane is a first length, the width of the second part on the second plane is a second length, and the width of the second part on the third plane is a third length, and the second length is shorter than each of the first length and the third length.

Abstract: Provided is an imaging device including a substrate; a pixel array in which pixels are arranged in a two-dimensional manner on the substrate, each pixel including a photoelectric conversion unit that accumulates charges generated from an incident light, a charge holding unit that holds the charges transferred from the photoelectric conversion unit, and an amplification unit that receives the charges transferred from the charge holding unit; and a light-shielding portion arranged to cover at least the charge holding unit. The photoelectric conversion unit and the charge holding unit in each pixel are aligned in a first direction in a top view orthogonal to the substrate. The charge holding units of the neighboring pixels are aligned in a second direction intersecting the first direction in the top view. The light-shielding portion extends in the second direction and over the charge holding units, and covers a region between the charge holding units.

Abstract: A solid-state imaging device including a plurality of pixels including a photoelectric conversion portion, a charge holding portion accumulating a signal charge transferred from the photoelectric conversion portion, and a floating diffusion region to which the signal charge of the charge holding portion is transferred, wherein the photoelectric conversion portion includes a first semiconductor region of a first conductivity type, and a second semiconductor region of a second conductivity type formed under the first semiconductor region, the charge holding portion includes a third semiconductor region of the first conductivity type, and a fourth semiconductor region of the second conductivity type formed under the third semiconductor region, and a p-n junction between the third semiconductor region and the fourth semiconductor region is positioned deeper than a p-n junction between the first semiconductor region and the second semiconductor region.

Abstract: In a state where an electric charge is held in a first charge holding unit, starting accumulation of an electric charge in a photoelectric conversion unit simultaneously in a plurality of pixel rows, and performing a first transfer operation for transferring an electric charge from the photoelectric conversion unit to the first charge holding unit simultaneously in the plurality of pixel rows.

Abstract: A solid-state image pickup apparatus includes a photoelectric conversion unit, a charge storage unit, and a floating diffusion unit, all disposed on a semiconductor substrate. The solid-state image pickup apparatus further includes a first gate electrode disposed on the semiconductor substrate and extending between the photoelectric conversion unit and charge storage unit, and a second gate electrode disposed on the semiconductor substrate and extending between the charge storage unit and the floating diffusion unit. The solid-state image pickup apparatus further includes a light shielding member including a first part and a second part, wherein the first part is disposed over the charge storage unit and at least over the first gate electrode or the second gate electrode, and the second part is disposed between the first gate electrode and the second gate electrode such that the second part extends from the first part toward a surface of the semiconductor substrate.

Abstract: A photoelectric conversion device includes a waveguide member disposed above a photoelectric conversion unit, and an insulating member disposed above a substrate, and surrounding at least part of the waveguide member. The waveguide member has a first side face, a second side face, and a third side face, arranged in that order from the substrate. An angle of inclination of the first side face is smaller than an angle of inclination of the second side face. An angle of inclination of the third side face is smaller than the angle of inclination of the second side face. The angle of inclination of the second side face is smaller than 90 degrees.

Abstract: An imaging device includes pixels each including a photoelectric converter that generates charges by photoelectric conversion, a first transfer transistor that transfers charges of the photoelectric converter to a first holding portion, a second transfer transistor that transfers charges of the first holding portion to a second holding portion, and an amplifier unit that outputs a signal based on charges held by the second holding portion. The first transfer transistor is configured to form a potential well for the charges between the photoelectric converter and the first holding portion when the first transistor is in an on-state. The maximum charge amount QPD generated by the photoelectric converter during one exposure period, a saturation charge amount QMEM_SAT of the first holding portion, and the maximum charge amount QGS that can be held in the potential well are in a relationship of: QPD<QGS?QMEM_SAT.

Abstract: A solid-state image pickup apparatus includes a photoelectric conversion unit, a charge storage unit, and a floating diffusion unit, all disposed on a semiconductor substrate. The solid-state image pickup apparatus further includes a first gate electrode disposed on the semiconductor substrate and extending between the photoelectric conversion unit and charge storage unit, and a second gate electrode disposed on the semiconductor substrate and extending between the charge storage unit and the floating diffusion unit. The solid-state image pickup apparatus further includes a light shielding member including a first part and a second part, wherein the first part is disposed over the charge storage unit and at least over the first gate electrode or the second gate electrode, and the second part is disposed between the first gate electrode and the second gate electrode such that the second part extends from the first part toward a surface of the semiconductor substrate.

Abstract: An image pickup apparatus performs a global electronic shutter operation in which exposure periods of a plurality of pixels coincide with one another. In a first period in which a photoelectric conversion unit of at least one of the pixels stores charge, signals based on charges stored in holding units of the pixels are successively output to output lines. In a second period after the output of the signals from the pixels is terminated, the holding units of the pixels hold charge.

Abstract: A manufacturing method includes a first process for forming a first gate electrode for a first MOS transistor and a second gate electrode for a second MOS transistor on a substrate including a semiconductor region defined by an insulator region for element isolation, a second process for masking a portion located above the semiconductor region of the first gate electrode to introduce an impurity to a source-drain region of the first MOS transistor, and a third process for forming a first conductor member being in contact with the portion of the first gate electrode through a first hole disposed on an insulator member covering the substrate and a second conductor member being in contact with the second gate electrode through a second hole disposed on the insulator member.

Abstract: Respective first signal holding units of a plurality of sets are commonly connected to an input node of an amplification unit of one set via a second transfer unit of a set to which the first signal holding unit corresponds, and respective second signal holding units of the plurality of sets are commonly connected to the input node of the amplification unit of one set via a fourth transfer unit of a set to which the second signal holding unit corresponds.

Abstract: An inventive solid-state imaging apparatus is provided which can improve the efficiency of the electric carrier transfer from a photoelectric conversion portion to an electric-carrier accumulation portion. The solid-state imaging apparatus includes an active region having the photoelectric conversion portion, the electric-carrier accumulation portion, and a floating diffusion, and an element isolation region having an insulator defining the active region. In planer view, the width of the active region in the electric-carrier accumulation portion under a gate of the first transfer transistor is larger than the width of the active region in the photoelectric conversion portion under the gate of the first transfer transistor.