Abstract: A solid-state imaging device according to the present disclosure includes: a charge storage region that stores a signal charge obtained through photoelectric conversion in a photoelectric conversion film; an amplification transistor that amplifies the signal charge stored in the charge storage region in a corresponding pixel; a contact plug that is electrically connected to the charge storage region and contains a semiconductor material; and a line that is disposed above the contact plug and contains a semiconductor material. The contact plug and the charge storage region are electrically connected, and the contact plug and a gate electrode of the amplification transistor are electrically connected via the line.

Abstract: A solid-state imaging device according to the present disclosure includes: a charge storage region that stores a signal charge obtained through photoelectric conversion in a photoelectric conversion film; an amplification transistor that amplifies the signal charge stored in the charge storage region in a corresponding pixel; a contact plug that is electrically connected to the charge storage region and contains a semiconductor material; and a line that is disposed above the contact plug and contains a semiconductor material. The contact plug and the charge storage region are electrically connected, and the contact plug and a gate electrode of the amplification transistor are electrically connected via the line.

Abstract: A surface property-improving agent for molded bodies made of polyolefin resins contains 50.0 parts to 90.0 parts by mass of a non-polar wax with a melting point of 50° C. to 100° C. and 10.0 parts to 50.0 parts by mass of a vinyl copolymer obtained by copolymerizing two types of monomers (b1) and (b2). The sum of the non-polar wax and the vinyl copolymer is 100.0 parts by mass. The monomer (b1) is styrene and/or acrylonitrile. The vinyl copolymer contains 0.1 parts to 49.9 parts by mass of the monomer (b1) and 0.1 parts to 9.9 parts by mass of the monomer (b2) wherein the sum of the monomer (b1) and the monomer (b2) is 10.0 parts to 50.0 parts by mass. To 100.0 parts by mass of a polyolefin resin, 0.5 parts to 10.0 parts by mass of the agent is added. The monomer (b2) is a methacryloxypropyl polyorganosiloxane.

Abstract: A solid-state imaging device includes: a first electrode formed above a semiconductor substrate; a photoelectric conversion film formed on the first electrode and for converting light into signal charges; a second electrode formed on the photoelectric conversion film; a charge accumulation region electrically connected to the first electrode and for accumulating the signal charges converted from the light by the photoelectric conversion film; a reset gate electrode for resetting the charge accumulation region; an amplification transistor for amplifying the signal charges accumulated in the charge accumulation region; and a contact plug in direct contact with the charge accumulation region, comprising a semiconductor material, and for electrically connecting to each other the first electrode and the charge accumulation region.

Abstract: A surface physical property modifier composition includes (A) a wax, (B) a vinyl (co)polymer, and (C) an aliphatic hydrocarbon having a carbon number of 5 to 14. Component (A) is set to be at least one selected from the group consisting of (a1) paraffin wax, (a2) microcrystalline wax, (a3) Fischer-Tropsch wax, and (a4) polyethylene wax, and component (B) is produced from at least one of (b1) a (meth)acrylonitrile, (b2) a (meth)acrylic acid having a carbon number of 1 to 4, (b3) a hydroxyethyl (meth)acrylate or hydroxypropyl (meth)acrylate, (b4) styrene, and (b5) predetermined (meth)acrylic acid alkyl esters. Component (A) is 50 to 98 parts by mass relative to 100 parts by mass of the total of (A) and (B), and component (C) is 0.001 to 1 percent by mass relative to the total amount of (A).

Abstract: A solid-state imaging device includes: a first electrode formed above a semiconductor substrate; a photoelectric conversion film formed on the first electrode and for converting light into signal charges; a second electrode formed on the photoelectric conversion film; a charge accumulation region electrically connected to the first electrode and for accumulating the signal charges converted from the light by the photoelectric conversion film; a reset gate electrode for resetting the charge accumulation region; an amplification transistor for amplifying the signal charges accumulated in the charge accumulation region; and a contact plug in direct contact with the charge accumulation region, comprising a semiconductor material, and for electrically connecting to each other the first electrode and the charge accumulation region.

Abstract: A photodiode that multiplies a charge generated by photoelectric conversion in an avalanche region includes: a p? type semiconductor layer having interfaces; an n+ type semiconductor region located inside the p? type semiconductor layer and in contact with the interface; an n+ type semiconductor region located inside the p? type semiconductor layer and connected to the n+ type semiconductor region; and a p type semiconductor region located between the n+ type semiconductor region and the interface, wherein the n+ type semiconductor region, the n+ type semiconductor region, and the p type semiconductor region each have a higher impurity concentration than the p? type semiconductor layer, the avalanche region is a region between the n+ type semiconductor region and the p type semiconductor region inside the p? type semiconductor layer, and the n+ type semiconductor region has a smaller area than the n+ type semiconductor region in planar view.

Abstract: A solid-state imaging device according to the present disclosure includes: a charge storage region that stores a signal charge obtained through photoelectric conversion in a photoelectric conversion film; an amplification transistor that amplifies the signal charge stored in the charge storage region in a corresponding pixel; a contact plug that is electrically connected to the charge storage region and contains a semiconductor material; and a line that is disposed above the contact plug and contains a semiconductor material. The contact plug and the charge storage region are electrically connected, and the contact plug and a gate electrode of the amplification transistor are electrically connected via the line.

Abstract: A solid-state imaging device according to the present disclosure includes: a charge storage region that stores a signal charge obtained through photoelectric conversion in a photoelectric conversion film; an amplification transistor that amplifies the signal charge stored in the charge storage region in a corresponding pixel; a contact plug that is electrically connected to the charge storage region and contains a semiconductor material; and a line that is disposed above the contact plug and contains a semiconductor material. The contact plug and the charge storage region are electrically connected, and the contact plug and a gate electrode of the amplification transistor are electrically connected via the line.

Abstract: A solid-state imaging device includes: pixels arranged in a matrix, a semiconductor substrate; a first electrode formed above the semiconductor substrate for each of the pixels; a photoelectric conversion film formed on the first electrode, for photoelectric conversion of light into signal charge; a charge accumulation region formed in the semiconductor substrate for accumulating the signal charge generated through the photoelectric conversion in the photoelectric conversion film; a contact plug for electrically connecting the first electrode and the charge accumulation region in a corresponding pixel; a high-concentration impurity region formed on a surface of the charge accumulation region, in a region in contact with the contact plug; a surface impurity region formed on the surface of the charge accumulation region, in a region not in contact with the contact plug; and a low-concentration impurity region formed between the high-concentration impurity region and the surface impurity region.

Abstract: A solid-state imaging device includes: an epilayer; pixel electrodes; a photoelectric converting film formed above the pixel electrodes and converting incident light into electric signals; a transparent electrode formed on the photoelectric converting film; charge accumulating regions of an n-type each (i) formed in the epilayer to correspond to one of the pixel electrodes, (ii) electrically connected to the one corresponding pixel electrode, and (iii) accumulating signal charges generated by the photoelectric converting film through the photo-electrically conversion; charge barrier regions of a p-type each formed in the epilayer to contact a bottom of a corresponding one of the charge accumulating regions; and charge draining regions of an n-type each formed in the epilayer to contact a bottom of a corresponding one of the charge barrier regions.

Abstract: A surface property-improving agent for molded bodies made of polyolefin resins contains 50.0 parts to 90.0 parts by mass of a non-polar wax with a melting point of 50° C. to 100° C. and 10.0 parts to 50.0 parts by mass of a vinyl copolymer obtained by copolymerizing two types of monomers (b1) and (b2). The sum of the non-polar wax and the vinyl copolymer is 100.0 parts by mass. The monomer (b1) is styrene and/or acrylonitrile. The vinyl copolymer contains 0.1 parts to 49.9 parts by mass of the monomer (b1) and 0.1 parts to 9.9 parts by mass of the monomer (b2) wherein the sum of the monomer (b1) and the monomer (b2) is 10.0 parts to 50.0 parts by mass. To 100.0 parts by mass of a polyolefin resin, 0.5 parts to 10.0 parts by mass of the agent is added. The monomer (b2) is a methacryloxypropyl polyorganosiloxane.

Abstract: A solid-state imaging device according to the present disclosure includes: a charge storage region that stores a signal charge obtained through photoelectric conversion in a photoelectric conversion film; an amplification transistor that amplifies the signal charge stored in the charge storage region in a corresponding pixel; a contact plug that is electrically connected to the charge storage region and contains a semiconductor material; and a line that is disposed above the contact plug and contains a semiconductor material. The contact plug and the charge storage region are electrically connected, and the contact plug and a gate electrode of the amplification transistor are electrically connected via the line.

Abstract: A solid-state imaging device includes: pixels arranged in a matrix, a semiconductor substrate; a first electrode formed above the semiconductor substrate for each of the pixels; a photoelectric conversion film formed on the first electrode, for photoelectric conversion of light into signal charge; a charge accumulation region formed in the semiconductor substrate for accumulating the signal charge generated through the photoelectric conversion in the photoelectric conversion film; a contact plug for electrically connecting the first electrode and the charge accumulation region in a corresponding pixel; a high-concentration impurity region formed on a surface of the charge accumulation region, in a region in contact with the contact plug; a surface impurity region formed on the surface of the charge accumulation region, in a region not in contact with the contact plug; and a low-concentration impurity region formed between the high-concentration impurity region and the surface impurity region.

Abstract: A solid-state imaging device includes: an epilayer; pixel electrodes; a photoelectric converting film formed above the pixel electrodes and converting incident light into electric signals; a transparent electrode formed on the photoelectric converting film; charge accumulating regions of an n-type each (i) formed in the epilayer to correspond to one of the pixel electrodes, (ii) electrically connected to the one corresponding pixel electrode, and (iii) accumulating signal charges generated by the photoelectric converting film through the photo-electrically conversion; charge barrier regions of a p-type each formed in the epilayer to contact a bottom of a corresponding one of the charge accumulating regions; and charge draining regions of an n-type each formed in the epilayer to contact a bottom of a corresponding one of the charge barrier regions.

Abstract: A solid-state imaging device includes: a first electrode formed above a semiconductor substrate; a photoelectric conversion film formed on the first electrode and for converting light into signal charges; a second electrode formed on the photoelectric conversion film; a charge accumulation region electrically connected to the first electrode and for accumulating the signal charges converted from the light by the photoelectric conversion film; a reset gate electrode for resetting the charge accumulation region; an amplification transistor for amplifying the signal charges accumulated in the charge accumulation region; and a contact plug in direct contact with the charge accumulation region, comprising a semiconductor material, and for electrically connecting to each other the first electrode and the charge accumulation region.

Abstract: It is intended to clarify heredity of the biosynthesis of flower pigments and the relationship between flower color heredities and pigment genotypes, thereby providing a method of crossing flower color genotypes which is practically available in creating a novel flower color. There is found out a novel rule that flower color genotypes relate to the biosynthesis of flavonoids represented by the pathway (I) and the heredities of flavonoid 3?-hydroxylase (F3?H) and flavonoid 3?,5?-hydroxylase (F3?,5?H) are controlled by 5 multiple alleles. As a result, it becomes possible to provide a method of producing a novel flower color with the use of genotypes D/d.E/e.H<X>H<X>.Pg/pg.Cy/cy.Dp/dp by which flower colors can be freely created based on flower pigment genotypes without resort to gene recombination or mutation caused by exposure to radiation, etc.

Abstract: It is intended to provide a method of constructing an azalea plant whereby a gene relating to evergreen characteristics can be transferred into a deciduous azalea plant, a gene relating to heat tolerance can be transferred into a heat-intolerant azalea plant, or a gene relating to ever-blooming characteristics can be transferred into a one season blooming azalea plant. A gene relating to evergreen characteristics can be transferred into a deciduous azalea plant by crossing a deciduous azalea plant with an evergreen azalea plant. A gene relating to heat tolerance can be transferred into a heat-intolerant azalea plant by crossing a heat-intolerant azalea plant with a heat-intolerant azalea plant. A gene relating to ever-blooming characteristics can be transferred into a one season blooming azalea plant by crossing a one season blooming gene with an ever-blooming azalea plant.

Abstract: It is intended to provide a flower color crossing method whereby a specific flower color is passed to the next generation of delphinium and a flower color crossing method whereby a dichromatic flower color is passed to the next generation of delphinium. It is also intended to provide a method whereby perpetual delphinium can be efficiently obtained in a warm place and a method of determining a delphinium flower color based on the ratio of main inherent colorants in the sepal. It is found out that a specific flower color can be passed to the next generation by using a full-color delphinium as a pollen parent or a seed parent and carrying out allogamous crossing and, at the same time, a dichromatic flower color can be passed to the next generation thereby. By growing a delphinium seedling under such conditions as allowing its germination in a petri dish at a temperature of about 15° C., a method of efficiently obtaining perpetual delphinium in a warm place is found out.