Abstract: A method is disclosed for diagnosing, validating and treating a patient having lesions in both arteries of left and right lower limbs. By determining that a shorter lesion to be treated first, catheters and an operation time can be reduced is to be treated first on a priority basis based on diagnostic data, deciding that a longer lesion is to be treated next, then treating the lesions substantially continuously.

Abstract: A method is disclosed for diagnosing and treating a patient having lesions in both arteries of left and right lower limbs. By determining that a lesion distal to an aortailiac bifurcation is to be treated first, catheters and an operation time can be reduced is to be treated first on a priority basis based on diagnostic data, deciding that a lesion proximal to the bifurcation is to be treated next, then treating the lesions substantially continuously.

Abstract: A method is disclosed for diagnosing and treating a patient having lesions in both arteries of left and right lower limbs. By determining that a lower stenosis rate lesion to be treated first, catheters and an operation time can be reduced is to be treated first on a priority basis based on diagnostic data, deciding that a higher stenosis rate lesion is to be treated next, then treating the lesions substantially continuously.

Abstract: The reservoir tank includes a reservoir body which reserves a fluid in an inner portion thereof formed to be in a hollow box shape. The reservoir body includes a port extending outward, a reservoir chamber which reserves the fluid and a port chamber which volume is smaller than that of the reservoir chamber and is in fluid communication with the port and a first communication passage positioned at a portion lower than a changeable liquid surface of the fluid reserved in the reservoir chamber in a vertical direction and provided at the first partition portion to allow the fluid communication between the reservoir chamber and the port chamber and wherein the port chamber and the port are kept being a state in which they are filled with the fluid supplied from the reservoir chamber via the first communication passage.

Abstract: A flushable catheter device has an outer tube with a first distal end opening to be introduced into a blood vessel and defining a first lumen. An inner tube is disposed in the first lumen with a second distal end opening proximally spaced from the first distal end opening and defining a second lumen. A space axially disposed between the end openings defines an outflow/inflow inhibiting portion which inhibits a flow of fluid out from the first lumen into the into the vessel as a result of a perfusion of a flushing fluid being supplied through the first lumen and into the second lumen.

Abstract: A highly reliable transistor which includes an oxide semiconductor and has high field-effect mobility and in which a variation in threshold voltage is small is provided. By using the transistor, a high-performance semiconductor device, which has been difficult to realize, is provided. The transistor includes an oxide semiconductor film which contains two or more kinds, preferably three or more kinds of elements selected from indium, tin, zinc, and aluminum. The oxide semiconductor film is formed in a state where a substrate is heated. Further, oxygen is supplied to the oxide semiconductor film with an adjacent insulating film and/or by ion implantation in a manufacturing process of the transistor, so that oxygen deficiency which generates a carrier is reduced as much as possible. In addition, the oxide semiconductor film is highly purified in the manufacturing process of the transistor, so that the concentration of hydrogen is made extremely low.

Abstract: A nonvolatile memory is provided. A semiconductor device (a nonvolatile memory) has a circuit configuration similar to that of a general SRAM. By providing a transistor whose off-state current is small between a stored data holding portion and a power supply line of the SRAM, leakage of electric charge from the stored data holding portion is prevented. As the transistor whose off-state current is small provided for preventing leakage of electric charge from the stored data holding portion, a transistor including an oxide semiconductor film is preferably used. Such a configuration can also be applied to a shift register, whereby a shift register with low power consumption can be obtained.

Abstract: The logic circuit includes an input terminal, an output terminal, a main logic circuit portion that is electrically connected to the input terminal and the output terminal, and a switching element electrically connected to the input terminal and the main logic circuit portion. Further, a first terminal of the switching element is electrically connected to the input terminal, a second terminal of the switching element is electrically connected to a gate of at least one transistor included in the main logic circuit portion, and the switching element is a transistor in which a leakage current in an off state per micrometer of channel width is lower than or equal to 1×10?17 A.

Abstract: A nonvolatile memory is provided. A semiconductor device (a nonvolatile memory) has a circuit configuration similar to that of a general SRAM. By providing a transistor whose off-state current is small between a stored data holding portion and a power supply line of the SRAM, leakage of electric charge from the stored data holding portion is prevented. As the transistor whose off-state current is small provided for preventing leakage of electric charge from the stored data holding portion, a transistor including an oxide semiconductor film is preferably used. Such a configuration can also be applied to a shift register, whereby a shift register with low power consumption can be obtained.

Abstract: A medical device includes a catheter having an opening formed in a side portion of the catheter, an infusion tubing extending within the catheter along an axial direction of the catheter; an infusion needle disposed at a distal portion of the infusion tubing, a connecting part which bendably connects the infusion needle to the distal portion of the infusion tubing, and a bending unit by which the infusion needle located inside the catheter so as to face the opening is bent at the connecting part at essentially a right angle with respect to the distal portion of the infusion tubing.

Abstract: A nonvolatile memory is provided. A semiconductor device (a nonvolatile memory) has a circuit configuration similar to that of a general SRAM. By providing a transistor whose off-state current is small between a stored data holding portion and a power supply line of the SRAM, leakage of electric charge from the stored data holding portion is prevented. As the transistor whose off-state current is small provided for preventing leakage of electric charge from the stored data holding portion, a transistor including an oxide semiconductor film is preferably used. Such a configuration can also be applied to a shift register, whereby a shift register with low power consumption can be obtained.

Abstract: A medical treatment device enables an injection needle to accurately puncture brain tissue at a prescribed position and a drug solution to be injected into brain tissue, while avoiding damage to the brain tissue as the injection needle is handled. The use of the medical treatment device involves inflating a first balloon located on the outside of a catheter, directing a distal portion of a puncture needle, which is located inside the catheter, to outside the catheter through an opening in the catheter, after which the first balloon is deflated and a second balloon is inflated, and moving the catheter towards the brain tissue located on the opening side so that the injection needle projecting from the opening punctures the brain region.

Abstract: A semiconductor device with a novel structure is provided, in which the operation voltage is reduced or the storage capacity is increased by reducing variation in the threshold voltages of memory cells after writing. The semiconductor device includes a plurality of memory cells each including a transistor including an oxide semiconductor and a transistor including a material other than an oxide semiconductor, a driver circuit that drives the plurality of memory cells, and a potential generating circuit that generates a plurality of potentials supplied to the driver circuit. The driver circuit includes a data buffer, a writing circuit that writes one potential of the plurality of potentials into each of the plurality of memory cells as data, a reading circuit that reads the data written into the memory cells, and a verifying circuit that verifies whether the read data agrees with data held in the data buffer or not.

Abstract: An object is to provide a current measurement method which enables a minute current to be measured. To achieve this, the value of a current flowing through an electrical element is not directly measured, but is calculated from a change in potential observed in a predetermined period. The detection of a minute current can be achieved by a measurement method including the steps of applying a predetermined potential to a first terminal of an electrical element comprising the first terminal and a second terminal; measuring an amount of change in potential of a node connected to the second terminal; and calculating, from the amount of change in potential, a value of a current flowing between the first terminal and the second terminal of the electrical element.

Abstract: A highly reliable transistor which includes an oxide semiconductor and has high field-effect mobility and in which a variation in threshold voltage is small is provided. By using the transistor, a high-performance semiconductor device, which has been difficult to realize, is provided. The transistor includes an oxide semiconductor film which contains two or more kinds, preferably three or more kinds of elements selected from indium, tin, zinc, and aluminum. The oxide semiconductor film is formed in a state where a substrate is heated. Further, oxygen is supplied to the oxide semiconductor film with an adjacent insulating film and/or by ion implantation in a manufacturing process of the transistor, so that oxygen deficiency which generates a carrier is reduced as much as possible. In addition, the oxide semiconductor film is highly purified in the manufacturing process of the transistor, so that the concentration of hydrogen is made extremely low.

Abstract: A highly reliable transistor which includes an oxide semiconductor and has high field-effect mobility and in which a variation in threshold voltage is small is provided. By using the transistor, a high-performance semiconductor device, which has been difficult to realize, is provided. The transistor includes an oxide semiconductor film which contains two or more kinds, preferably three or more kinds of elements selected from indium, tin, zinc, and aluminum. The oxide semiconductor film is formed in a state where a substrate is heated. Further, oxygen is supplied to the oxide semiconductor film with an adjacent insulating film and/or by ion implantation in a manufacturing process of the transistor, so that oxygen deficiency which generates a carrier is reduced as much as possible. In addition, the oxide semiconductor film is highly purified in the manufacturing process of the transistor, so that the concentration of hydrogen is made extremely low.

Abstract: A medical device is configured to position a bag member filled with a therapeutic substance in a prescribed region of the brain. The use of this medical device involves, with a sheath inserted in the brain region, filling a therapeutic substance into a bag member through an infusion tube, followed by retracting the sheath relative to the infusion tube until the bag member protrudes forward beyond the distal end of the sheath. After this, the bag member is put indwelling in the brain region by moving an operating member relative to the infusion tube to detach the bag member from the distal end of the infusion tube.

Abstract: A nonvolatile memory is provided. A semiconductor device (a nonvolatile memory) has a circuit configuration similar to that of a general SRAM. By providing a transistor whose off-state current is small between a stored data holding portion and a power supply line of the SRAM, leakage of electric charge from the stored data holding portion is prevented. As the transistor whose off-state current is small provided for preventing leakage of electric charge from the stored data holding portion, a transistor including an oxide semiconductor film is preferably used. Such a configuration can also be applied to a shift register, whereby a shift register with low power consumption can be obtained.

Abstract: A semiconductor device which is capable of high-speed writing with less power consumption and suitable for multi-leveled memory, and verifying operation. A memory cell included in the semiconductor device included a transistor formed using an oxide semiconductor and a transistor formed using a material other than an oxide semiconductor. A variation in threshold value of the memory cells is derived before data of a data buffer is written by using a writing circuit. Data in which the variation in threshold value is compensated with respect to the data of the data buffer is written to the memory cell.

Abstract: A semiconductor device including a first transistor and a second transistor and a capacitor which are over the first transistor is provided. A semiconductor layer of the second transistor includes an offset region. In the second transistor provided with an offset region, the off-state current of the second transistor can be reduced. Thus, a semiconductor device which can hold data for a long time can be provided.