Abstract: The present invention relates to a process for forming an reverse tone image on a device comprising; a) forming an optional absorbing organic underlayer on a substrate; b) forming a coating of a photoresist over the underlayer; c) forming a photoresist pattern; d) forming a polysilazane coating over the photoresist pattern from a polysilazane coating composition, where the polysilazane coating is thicker than the photoresist pattern, and further where the polysilazane coating composition comprises a silicon/nitrogen polymer and an organic coating solvent; e) etching the polysilazane coating to remove the polysilazane coating at least up to a level of the top of the photoresist such that the photoresist pattern is revealed; and, f) dry etching to remove the photoresist and the underlayer which is beneath the photoresist, thereby forming an opening beneath where the photoresist pattern was present.

Abstract: In the present invention, in a water soluble resin composition for use in a method for pattern formation in which a covering layer is provided on a resist pattern formed of a radiation-sensitive resin composition capable of coping with ArF exposure to increase the width of the resist pattern and thus to realize effective formation of higher density trench or hole pattern, the size reduction level of the resist pattern layer can be further increased as compared with that in the prior art technique, and, in addition, the size reduction level dependency of the coarse-and-fine resist pattern can be reduced. A method for pattern formation using the water soluble resin composition is also provided. The water soluble resin composition which is usable for the method for pattern formation applicable to ArF excimer laser irradiation comprises a water soluble resin, an acid generating agent capable of generating an acid upon heating, a surfactant, a crosslinking agent, and a water-containing solvent.

Abstract: A process which comprises applying a water-soluble resin composition comprising a water-soluble vinyl resin, a compound having at least two amino groups in the molecule, a solvent, and, if necessary, an additive such as a surfactant on a resist pattern (2) formed on a substrate (1) to form a water-soluble resin film (3) , modifying part of the water-soluble resin film adjacent to the resist pattern through mixing to form a water-insolubilized layer (4) which cannot be removed by water washing on the surface of the resist pattern, and removing unmodified part of the water-soluble resin film by water washing and which enables the effective scale-down of separation size and hole opening size of a resist pattern to a level finer than the limit of resolution of the wave length of exposure.

Abstract: A circuit switching user agent system includes a service processing device arranged in a home network of an IMS (IP Multimedia Subsystem)/MMD (Multi-Media Domain). The circuit switching user agent system also includes a communication device arranged in a visited network where a mobile terminal has visited, the communication device having a function of interconversion between a UNI (User-Network Interface) signal in a circuit switching network to which the mobile terminal is connected and a signal used in the IMS/MMD.

Abstract: A mobile communication system for connecting a terminal to service networks includes a wireless access network device, a gateway device, and a mobility management device. The wireless access network device connects to the terminal. The gateway device establishes a plurality of tunnels connecting the terminal to the service networks and switches the plurality of tunnels according to a request. The mobility management device sends to the gateway device the request to collectively switch the plurality of tunnels.

Abstract: In a method of effectively miniaturizing a resist pattern, a super fine pattern-forming method of restricting a film thickness of a crosslinked film and also preventing developing defects is provided using a super fine pattern-forming material which contains a solvent composed of a water-soluble resin, a water-soluble crosslinking agent, and water or a mixing solution of water and a water-soluble organic solvent, and an amine compound-containing developing solution. The amine compound-containing developing solution is preferably a primary amine compound such as polyallylamine, monomethanolamine, and monoethanolamine, a secondary amine compound such as dimethylamine, diethylamine, dimethanolamine, and diethanolamine, a tertiary amine compound such as trimethylamine, triethylamine, trimethanolamine, and triethanolamine, or a quartenary amine compound such as hydrated tetramethylamine.

Abstract: The object of the present invention is to provide an anti-reflective coating composition having excellent coating properties while maintaining performance as an anti-reflective film. An anti-reflective coating composition comprising at least the following components (A), (B), (C), (D), and (E) and a production method for a pattern using the anti-reflective coating composition, (A) perfluoroalkyl•alkylenesulfonic acid represented by the following formula (1): CnF2n+1(CH2CH2)mSO3H (1) (wherein, n represents an integer from 1 to 20, and m represents an integer from 0 to 20); (B) organic amine; (C) water-soluble polymer; (D) perfluoroalkylethyl group containing compound represented by the following formula (2): CkF2k+1CH2CH2—X—Y (2) (wherein, k represents an integer from 1 to 20, x represents a single bond or a divalent linking group, y represents an anionic group or a nonionic group, and this compound has a structure different from that of the component (A)); and (E) water.

Abstract: In the present invention, in a water soluble resin composition for use in a method for pattern formation in which a covering layer is provided on a resist pattern formed of a radiation-sensitive resin composition capable of coping with ArF exposure to increase the width of the resist pattern and thus to realize effective formation of higher density trench or hole pattern, the size reduction level of the resist pattern layer can be further increased as compared with that in the prior art technique, and, in addition, the size reduction level dependency of the coarse-and-fine resist pattern can be reduced. A method for pattern formation using the water soluble resin composition is also provided. The water soluble resin composition which is usable for the method for pattern formation applicable to ArF excimer laser irradiation comprises a water soluble resin, an acid generating agent capable of generating an acid upon heating, a surfactant, a crosslinking agent, and a water-containing solvent.

Abstract: In the method wherein a resist pattern is miniaturized effectively by applying a fine pattern forming material, the fine pattern forming material used for providing with a cured coated layer pattern, wherein development defects are reduced by water development is offered, wherein the fine pattern forming material comprises a water-soluble resin, a water-soluble crosslinking agent and water or a mixed solution consisting of water and a water-soluble organic solvent, and further comprises an amine compound.

Abstract: An anti-reflective coating film is formed by applying on a chemically amplified photoresist film an anti-reflective coating composition comprising an alkali-soluble fluorine-containing polymer, an acid, an amine and a solvent capable of dissolving these components and having a pH of 7 or less. The formed anti-reflective coating film can serve to prevent multiple reflections within the photoresist film, increase the amount of reduction in thickness of the photoresist film upon development with a developer after exposure, and form a pattern having a rectangular cross-sectional pattern and not having T-top or round top.

Abstract: A water-soluble resin composition of the present invention comprises at least a water-soluble resin, an acid generator capable of generating an acid by heating and a solvent containing water. The water-soluble resin composition is applied on a highly water-repellant resist pattern 3 formed by a resist such as an ArF-responsive radiation sensitive resin composition on a substrate 1 to form a coated layer 4 thereon. The resist pattern 3 and the coated layer 4 are heat-treated to form a developer-insoluble modified coated layer 5 in the vicinity of a surface of the resist pattern 3. The coated layer is developed and the resist pattern thickened by the modified layer 5 is formed. The modified layer is a layer with sufficient thickness and is able to be formed with a high dimensional controllability in a highly water-repellant resist pattern such as ArF-responsive radiation sensitive resin composition.

Abstract: A fine pattern forming material comprising a water soluble resin of polyvinyl alcohol derivative, etc., a water soluble crosslinking agent of melamine derivative, urea derivative, etc., an amine compound, a nonionic surfactant and water or a solution of a mixture of water and water soluble organic solvent, the solution exhibiting a pH value of >7. This fine pattern forming material is applied on to resist pattern (3) to thereby form coating layer (4), and the coating layer (4) is heated and developed to thereby form crosslinked coating layer (5). The thickness of the crosslinked coating layer is increased by the use of a secondary amine compound and/or tertiary amine compound over that realized when no amine compound is added, while the thickness of the crosslinked coating layer is decreased by the use of a quaternary amine.

Abstract: The present invention can provide a radio communication apparatus comprising an antenna which receives a restriction signal from a radio base station, a reception circuit which decodes the restriction signal received by said antenna, and a control circuit which controls the radio communication apparatus, in which the control circuit can be adapted to select appropriately a speech outgoing/incoming scheme for performing communication with the radio base station on the basis of the restriction signal from the radio base station. As the speech outgoing/incoming scheme, a domain scheme or a speech communication scheme is used. In addition, the present invention further provides a communication network control system using the radio communication apparatus, and a communication network control method.

Abstract: In a method of effectively miniaturizing a resist pattern, a super fine pattern-forming method of restricting a film thickness of a crosslinked film and also preventing developing defects is provided using a super fine pattern-forming material which contains a solvent composed of a water-soluble resin, a water-soluble crosslinking agent, and water or a mixing solution of water and a water-soluble organic solvent, and an amine compound-containing developing solution. The amine compound-containing developing solution is preferably a primary amine compound such as polyallylamine, monomethanolamine, and monoethanolamine, a secondary amine compound such as dimethylamine, diethylamine, dimethanolamine, and diethanolamine, a tertiary amine compound such as trimethylamine, triethylamine, trimethanolamine, and triethanolamine, or a quartenary amine compound such as hydrated tetramethylamine.

Abstract: The object of the present invention is to provide an anti-reflective coating composition having excellent coating properties while maintaining performance as an anti-reflective film. An anti-reflective coating composition comprising at least the following components (A), (B), (C), (D), and (E) and a production method for a pattern using the anti-reflective coating composition, (A) perfluoroalkyl•alkylenesulfonic acid represented by the following formula (1): CnF2n+1(CH2CH2)mSO3H (1) (wherein, n represents an integer from 1 to 20, and m represents an integer from 0 to 20); (B) organic amine; (C) water-soluble polymer; (D) perfluoroalkylethyl group containing compound represented by the following formula (2): CkF2k+1CH2CH2—X—Y (2) (wherein, k represents an integer from 1 to 20, x represents a single bond or a divalent linking group, y represents an anionic group or a nonionic group, and this compound has a structure different from that of the component (A)); and (E) water.

Abstract: In accordance with the objectives of the invention a new water soluble negative photoresist is provided for packing-and-unpacking (PAU) processing steps.

Abstract: A composition for reducing development defects comprising an acidic composition containing, for example, a surfactant applied onto a chemically amplified photoresist coating formed on a substrate having a diameter of 8 inches or more. By this process, the surface of the resist is rendered hydrophilic and the formation of slightly soluble layer in a developer on the surface of the resist is prevented. In addition, by proper diffusion amount of acid from the composition for reducing development defects, the amount of reduction in thickness of the chemically amplified photoresist coating after development is increased by 10 ? to 500 ? in comparison with the case of not applying the composition for reducing development defects to form a resist pattern not having a deteriorated pattern profile such as T-top or round top.

Abstract: The present invention provides a method of forming a fine pattern, comprising the steps of forming a resist pattern 3 made of a chemically amplified photoresist on a substrate 1 with a diameter of 6 inches or more, applying a fine pattern forming material containing a water-soluble resin, a water-soluble crosslinking agent and water or a mixed solvent of water and a water-soluble organic solvent to form a coated layer 4, baking the chemically amplified photoresist pattern and the coated layer, and developing the coated layer after baking, wherein the water-soluble resin in the fine pattern forming material is a water-soluble resin, the peak temperature of heat of fusion of which in a DSC curve is higher than the baking temperature in the above baking step and simultaneously higher than 130° C.

Abstract: In the method wherein a resist pattern is miniaturized effectively by applying a fine pattern forming material, the fine pattern forming material used for providing with a cured coated layer pattern, wherein development defects are reduced by water development is offered, wherein the fine pattern forming material comprises a water-soluble resin, a water-soluble crosslinking agent and water or a mixed solution consisting of water and a water-soluble organic solvent, and further comprises an amine compound.

Abstract: A water-soluble resin composition of the present invention comprises at least a water-soluble resin, an acid generator capable of generating an acid by heating and a solvent containing water. The water-soluble resin composition is applied on a highly water-repellant resist pattern 3 formed by a resist such as an ArF-responsive radiation sensitive resin composition on a substrate 1 to form a coated layer 4 thereon. The resist pattern 3 and the coated layer 4 are heat-treated to form a developer-insoluble modified coated layer 5 in the vicinity of a surface of the resist pattern 3. The coated layer is developed and the resist pattern thickened by the modified layer 5 is formed. The modified layer is a layer with sufficient thickness and is able to be formed with a high dimensional controllability in a highly water-repellant resist pattern such as ArF-responsive radiation sensitive resin composition.