Patents by Inventor Yusuke Takino
Yusuke Takino has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20250062130Abstract: A plasma processing method according to the present disclosure includes a preparing a substrate having a first etching film and a mask on the first etching film, the mask including a metal-containing film; and generating plasma in a chamber with a processing gas including one or both of a chlorine-containing gas and a bromine-containing gas to etch the first etching film.Type: ApplicationFiled: November 1, 2024Publication date: February 20, 2025Inventors: Yusuke TAKINO, Takahiro YONEZAWA
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Patent number: 12125710Abstract: A substrate processing method includes: (a) providing a substrate including an etching target film, a first mask formed on the etching target film, and a second mask formed on the first mask, the second mask being different in film type from the first mask and having an opening; (b) selectively etching the first mask with respect to the second mask, thereby forming an opening in the first mask such that an opening dimension of at least a portion of the first mask is larger than an opening dimension of a bottom of the second mask; and (c) etching the etching target film.Type: GrantFiled: January 27, 2022Date of Patent: October 22, 2024Assignee: TOKYO ELECTRON LIMITEDInventors: Sho Kumakura, Yusuke Takino
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Patent number: 12112954Abstract: An etching method includes forming a film on a surface of a substrate having a region to be etched and a mask. The mask is provided on the region and includes an opening that partially exposes the region. The film is made of the same material as that of the region. The etching method further includes etching the region.Type: GrantFiled: January 28, 2021Date of Patent: October 8, 2024Assignee: TOKYO ELECTRON LIMITEDInventors: Maju Tomura, Tomohiko Niizeki, Takayuki Katsunuma, Hironari Sasagawa, Yuta Nakane, Shinya Ishikawa, Kenta Ono, Sho Kumakura, Yusuke Takino, Masanobu Honda
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Publication number: 20240312771Abstract: An etching method includes: (a) providing a substrate having a film stack including at least two different silicon-containing films and a mask on the film stack; (b) etching the film stack using plasma generated from a first processing gas to form a recess in the film stack; and (c) supplying hydrogen fluoride to the recess in the film stack.Type: ApplicationFiled: March 13, 2024Publication date: September 19, 2024Applicant: Tokyo Electron LimitedInventors: Yusuke TAKINO, Noboru SAITO, Takahiro YOKOYAMA
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Patent number: 12009219Abstract: A plasma processing method includes: (a) providing a substrate having an etching target film with a recess formed therein, on a substrate support; (b) forming a protective film on a side wall of the recess; (c) after (b), generating plasma from a processing gas to etch a bottom of the recess; and (d) performing a sequence including (b) and (c) one or more times. The step (c) includes a first stage of etching the bottom of the recess while suppressing a formation of a shoulder portion caused when reaction by-products produced by the etching adhere to the side wall, and a second stage of further etching the bottom of the recess in a state where a temperature of the substrate support is controlled to ?40° C. or lower, after the first stage.Type: GrantFiled: December 17, 2021Date of Patent: June 11, 2024Assignee: TOKYO ELECTRON LIMITEDInventors: Yusuke Takino, Takayuki Hoshi
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Publication number: 20230377899Abstract: A plasma processing method according to the present disclosure is performed with a plasma processing apparatus, and includes: (a) preparing a substrate on a substrate support in the chamber, the substrate having an etching target film including a first silicon-containing film, and a first metal-containing film on the etching target film, the first metal-containing film including an opening pattern; and (b) etching the etching target film. (b) includes supplying a processing gas including one or more gases containing carbon, hydrogen, and fluorine into the chamber to form a plasma from the processing gas within the chamber and etch the first silicon-containing film to form the opening pattern in the first silicon-containing film, and a ratio of the number of hydrogen atoms to the number of fluorine atoms in the processing gas is 0.3 or more.Type: ApplicationFiled: May 19, 2023Publication date: November 23, 2023Inventors: Takahiro YONEZAWA, Yusuke TAKINO, Kenta ONO, Tetsuya NISHIZUKA
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Publication number: 20230107264Abstract: An etching method according to one embodiment of the present disclosure includes step (a), step (b), step (c), step (d), and step (e). Step (a) provides a substrate that has a silicon-containing film which does not include oxygen and nitrogen, and a mask formed on the silicon-containing film. Step (b) etches the silicon-containing film with plasma generated from a first processing gas that includes a halogen-containing gas to form a recess portion. Step (c) forms an oxide film in the recess portion with plasma generated from a second processing gas that includes an oxygen-containing gas and a gas including carbon, hydrogen, and fluorine. Step (d) further etches the silicon-containing film with the plasma generated from the first processing gas after step (c). Step (e) repeatedly executes step (c) and step (d) a preset number of times.Type: ApplicationFiled: September 26, 2022Publication date: April 6, 2023Applicant: Tokyo Electron LimitedInventors: Fumiya TAKATA, Yusuke TAKINO
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Patent number: 11594418Abstract: An etching method includes: (a) etching a substrate including an etching target film and a mask formed on the etching target film to form a recess that reaches the etching target film; (b) forming a protective film having a thickness corresponding to one molecular layer on a surface of the recess using a first gas; (c) etching the etching target film with plasma generated from a second gas while leaving the protective film on a side wall of the recess; and (d) repeating (b) and (c).Type: GrantFiled: February 19, 2021Date of Patent: February 28, 2023Assignee: TOKYO ELECTRON LIMITEDInventors: Kentaro Yamaguchi, Yusuke Takino
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Patent number: 11462407Abstract: An etching method includes: forming a second film on a workpiece target including a processing target film, a layer including a plurality of convex portions formed on the processing target film, and a first film that covers the plurality of convex portions and the processing target film exposed between the plurality of convex portions; etching the second film in a state where the second film remains on a portion of the first film that covers a side surface of each of the plurality of convex portions; and etching the first film in a state where the second film remains on the portion of the first film that covers the side surface of each of the plurality of convex portions, thereby exposing a top portion of each of the plurality of convex portions and the processing target film between the plurality of convex portions.Type: GrantFiled: July 9, 2019Date of Patent: October 4, 2022Assignee: TOKYO ELECTRON LIMITEDInventors: Yusuke Yanagisawa, Yusuke Takino
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Publication number: 20220246440Abstract: A substrate processing method includes: (a) providing a substrate including an etching target film, a first mask formed on the etching target film, and a second mask formed on the first mask, the second mask being different in film type from the first mask and having an opening; (b) selectively etching the first mask with respect to the second mask, thereby forming an opening in the first mask such that an opening dimension of at least a portion of the first mask is larger than an opening dimension of a bottom of the second mask; and (c) etching the etching target film.Type: ApplicationFiled: January 27, 2022Publication date: August 4, 2022Applicant: Tokyo Electron LimitedInventors: Sho KUMAKURA, Yusuke TAKINO
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Publication number: 20220199415Abstract: A plasma processing method includes: (a) providing a substrate having an etching target film with a recess formed therein, on a substrate support; (b) forming a protective film on a side wall of the recess; (c) after (b), generating plasma from a processing gas to etch a bottom of the recess; and (d) performing a sequence including (b) and (c) one or more times. The step (c) includes a first stage of etching the bottom of the recess while suppressing a formation of a shoulder portion caused when reaction by-products produced by the etching adhere to the side wall, and a second stage of further etching the bottom of the recess in a state where a temperature of the substrate support is controlled to ?40° C. or lower, after the first stage.Type: ApplicationFiled: December 17, 2021Publication date: June 23, 2022Applicant: Tokyo Electron LimitedInventors: Yusuke TAKINO, Takayuki HOSHI
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Patent number: 11361973Abstract: An etching method includes preparing a substrate having a processing target film, multiple core members formed on the processing target film, and a first film covering the multiple core members and the processing target film exposed between the multiple core members; forming a second film on a surface of the first film by a first gas; etching the first film by plasma of a second gas while allowing the second film to be left on a portion of the first film corresponding to a side surface of each core member; and repeating the forming of the second film and the etching of the first film.Type: GrantFiled: December 4, 2020Date of Patent: June 14, 2022Assignee: TOKYO ELECTRON LIMITEDInventor: Yusuke Takino
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Publication number: 20210265169Abstract: An etching method includes: (a) etching a substrate including an etching target film and a mask formed on the etching target film to form a recess that reaches the etching target film; (b) forming a protective film having a thickness corresponding to one molecular layer on a surface of the recess using a first gas; (c) etching the etching target film with plasma generated from a second gas while leaving the protective film on a side wall of the recess; and (d) repeating (b) and (c).Type: ApplicationFiled: February 19, 2021Publication date: August 26, 2021Applicant: TOKYO ELECTRON LIMITEDInventors: Kentaro YAMAGUCHI, Yusuke TAKINO
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Publication number: 20210233778Abstract: An etching method includes forming a film on a surface of a substrate having a region to be etched and a mask. The mask is provided on the region and includes an opening that partially exposes the region. The film is made of the same material as that of the region. The etching method further includes etching the region.Type: ApplicationFiled: January 28, 2021Publication date: July 29, 2021Applicant: TOKYO ELECTRON LIMITEDInventors: Maju TOMURA, Tomohiko NIIZEKI, Takayuki KATSUNUMA, Hironari SASAGAWA, Yuta NAKANE, Shinya ISHIKAWA, Kenta ONO, Sho KUMAKURA, Yusuke TAKINO, Masanobu HONDA
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Publication number: 20210175090Abstract: An etching method includes preparing a substrate having a processing target film, multiple core members formed on the processing target film, and a first film covering the multiple core members and the processing target film exposed between the multiple core members; forming a second film on a surface of the first film by a first gas; etching the first film by plasma of a second gas while allowing the second film to be left on a portion of the first film corresponding to a side surface of each core member; and repeating the forming of the second film and the etching of the first film.Type: ApplicationFiled: December 4, 2020Publication date: June 10, 2021Inventor: Yusuke Takino
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Publication number: 20210057220Abstract: An etching method includes: forming a second film on a workpiece target including a processing target film, a layer including a plurality of convex portions formed on the processing target film, and a first film that covers the plurality of convex portions and the processing target film exposed between the plurality of convex portions; etching the second film in a state where the second film remains on a portion of the first film that covers a side surface of each of the plurality of convex portions; and etching the first film in a state where the second film remains on the portion of the first film that covers the side surface of each of the plurality of convex portions, thereby exposing a top portion of each of the plurality of convex portions and the processing target film between the plurality of convex portions.Type: ApplicationFiled: July 9, 2019Publication date: February 25, 2021Applicant: TOKYO ELECTRON LIMITEDInventors: Yusuke YANAGISAWA, Yusuke TAKINO
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Patent number: 10593783Abstract: In a processing method according to one exemplary embodiment, a first nitrified region of a workpiece is etched. The first nitrified region is provided on a first protrusion made of silicon. The workpiece further has a second protrusion, a second nitrified region, and an organic region. The second protrusion is made of silicon. The second nitrified region contains silicon and nitrogen and is provided on the second protrusion. The organic region covers the first and second protrusions and the first and second nitrified regions. In the processing method, the organic region is partially etched to expose the first nitrified region. Then, a silicon oxide film is formed to cover the surface of an intermediate product produced from the workpiece. Then, the silicon oxide film is etched to expose an upper surface of the first nitrified region. Then, the first nitrified region is isotropically etched.Type: GrantFiled: February 13, 2019Date of Patent: March 17, 2020Assignee: TOKYO ELECTRON LIMITEDInventors: Yusuke Takino, Kentarou Fujita, Yusuke Yanagisawa
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Publication number: 20190259860Abstract: In a processing method according to one exemplary embodiment, a first nitrified region of a workpiece is etched. The first nitrified region is provided on a first protrusion made of silicon. The workpiece further has a second protrusion, a second nitrified region, and an organic region. The second protrusion is made of silicon. The second nitrified region contains silicon and nitrogen and is provided on the second protrusion. The organic region covers the first and second protrusions and the first and second nitrified regions. In the processing method, the organic region is partially etched to expose the first nitrified region. Then, a silicon oxide film is formed to cover the surface of an intermediate product produced from the workpiece. Then, the silicon oxide film is etched to expose an upper surface of the first nitrified region. Then, the first nitrified region is isotropically etched.Type: ApplicationFiled: February 13, 2019Publication date: August 22, 2019Applicant: Tokyo Electron LimitedInventors: Yusuke TAKINO, Kentarou Fujita, Yusuke Yanagisawa
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Patent number: 9603788Abstract: An object of the present invention is to provide a hair styling composition formulated to make hair styling easy and to add wet-look shine to hair. The hair styling composition which achieves the above object contains (A) a thickener, (B) a hair fixative polymer and/or a liquid oil, (C) a wax particle dispersion, and (D) water. In the hair styling composition of the present invention, the wax particle dispersion (C) is preferably an Euphorbia Cerifera (Candelilla) wax particle dispersion or a beeswax particle dispersion, or preferably contains wax, at least one nonionic surfactant selected from the group consisting of polyoxyethylene cetyl ether and polyoxyethylene polyoxypropylene cetyl ether, and water.Type: GrantFiled: November 18, 2014Date of Patent: March 28, 2017Assignee: MILBON CO., LTD.Inventors: Marina Mimura, Yusuke Takino, Yohei Matsumoto
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Patent number: 9412607Abstract: An isotropic etching process can be performed with high uniformity. A plasma etching method of etching an etching target layer containing silicon includes preparing a processing target object having the etching target layer in a processing chamber; removing an oxide film on a surface of the etching target layer by generating plasma of a first processing gas that contains a fluorocarbon gas or a fluorohydrocarbon gas but does not contain oxygen; removing a carbon-based reaction product generated when the removing of the oxide film by generating plasma of a second processing gas that does not contain oxygen; and etching the etching target layer without applying a high frequency bias power to a lower electrode serving as a mounting table configured to mount the processing target object thereon by generating plasma of a third processing gas containing a fluorocarbon gas or a fluorohydrocarbon gas with a microwave.Type: GrantFiled: May 7, 2014Date of Patent: August 9, 2016Assignee: TOKYO ELECTRON LIMITEDInventors: Tomiko Kamada, Akinori Kitamura, Hiroto Ohtake, Yutaka Osada, Yuji Otsuka, Masayuki Kohno, Yusuke Takino, Eiji Suzuki