Patents by Inventor Yusuke Tsukada

Yusuke Tsukada has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11989975
    Abstract: The disclosure is inputting a first image captured an image of an authentication target; inputting a second image captured an image of a right eye or a left eye of the target; determining whether the second image is of a left eye or a right eye of the target based on information including the first image, and outputting a determination result as left/right information in association with the second image; detecting an overlap between a region including the second image and a predetermined region in the first image; calculating a verification score by comparing characteristic information that are related to the left/right information with iris characteristic information calculated from the second image, and calculating a first weighted verification score obtained by weighting the verification score with a detection result; and authenticating a target in the second image based on the first weighted verification score, and outputting an authentication result.
    Type: Grant
    Filed: July 3, 2023
    Date of Patent: May 21, 2024
    Assignee: NEC CORPORATION
    Inventors: Takashi Shibata, Shoji Yachida, Chisato Funayama, Masato Tsukada, Yuka Ogino, Keiichi Chono, Emi Kitagawa, Yasuhiko Yoshida, Yusuke Mori
  • Patent number: 11978282
    Abstract: An authentication system according to one aspect of the present disclosure includes: at least one memory storing a set of instructions; and at least one processor configured to execute the set of instructions to: track an object included in a video captured by a first capture device; detect a candidate for biometric authentication in the object being tracked; determine whether biometric authentication has been performed for the candidate based on a record of biometric authentication performed for the object being tracked; and perform the biometric authentication for the candidate based on a video of an authentication part of the candidate when the biometric authentication has not been performed for the candidate, the video of the authentication part being captured by a second capture device having a capture range including a part of a capture range of the first capture device.
    Type: Grant
    Filed: October 17, 2022
    Date of Patent: May 7, 2024
    Assignee: NEC CORPORATION
    Inventors: Keiichi Chono, Masato Tsukada, Chisato Funayama, Ryuichi Akashi, Yuka Ogino, Takashi Shibata, Shoji Yachida, Hiroshi Imai, Emi Kitagawa, Yasuhiko Yoshida, Yusuke Mori
  • Patent number: 11961329
    Abstract: The disclosure is inputting a first image obtained by capturing an object of authentication moving in a specific direction; inputting a second image at least for one eye obtained by capturing a right eye or a left eye of the object; determining whether the second image is of the left eye or the right eye of the object, based on information including the first image, and outputting a determination result associated with the second image as left/right information; comparing characteristic information relevant to the left/right information, the characteristic information being acquired from a memory that stores the characteristic information of a right eye and a left eye pertaining to object to be authenticated, with characteristic information associated with the left/right information, and calculating a verification score; and authenticating the object captured in the first image and the second image, based on the verification score, and outputting an authentication result.
    Type: Grant
    Filed: May 22, 2023
    Date of Patent: April 16, 2024
    Assignee: NEC CORPORATION
    Inventors: Takashi Shibata, Shoji Yachida, Chisato Funayama, Masato Tsukada, Yuka Ogino, Keiichi Chono, Emi Kitagawa, Yasuhiko Yoshida, Yusuke Mori
  • Patent number: 11955211
    Abstract: A first-aid information provision system of the example embodiments includes: an information display device that includes first capture means for capturing an iris image, code acquisition means for acquiring a code associated with the captured iris image, and code display means for displaying the acquired code; and an information output device that includes second capture means for imaging the code displayed by the information display device, first-aid information acquisition means for acquiring first-aid information about an individual associated with the iris image by using the imaged code, and first-aid information output means for outputting the first-aid information.
    Type: Grant
    Filed: October 15, 2018
    Date of Patent: April 9, 2024
    Assignee: NEC CORPORATION
    Inventors: Takashi Shibata, Shoji Yachida, Chisato Funayama, Masato Tsukada, Yuka Ogino, Keiichi Chono, Emi Kitagawa, Yasuhiko Yoshida, Yusuke Mori, Toru Takahashi
  • Publication number: 20240068380
    Abstract: There is provided a pit initiation evaluation system or the like capable of predicting pit initiation effectively and at low cost. In a pit initiation evaluation system of an embodiment, a pit initiation evaluation unit creates and retains, based on a dry-wet alternate time data, a deposit impurity concentration data, and a pit initiation data on pitting corrosion initiated in each of a plurality of turbine stages when an operation is actually performed in the steam turbine, a pit initiation evaluation table presenting a relationship between a dry-wet alternate time, a deposit impurity concentration, and pit initiation. Further, the pit initiation evaluation unit is configured to evaluate, by using the pit initiation evaluation table, pitting corrosion to be initiated in each of the plurality of turbine stages in an operation planned for the steam turbine.
    Type: Application
    Filed: November 2, 2022
    Publication date: February 29, 2024
    Applicant: TOSHIBA ENERGY SYSTEMS & SOLUTIONS CORPORATION
    Inventors: Yuka TSUKADA, Kazuhiro SAITO, Yusuke SUZUKI, Yoshikazu NINOMIYA, Osamu TANAKA, Yasuteru KAWAI, Shinichi TERADA, Makoto SASAKI
  • Publication number: 20230253461
    Abstract: An object is to provide a nonpolar or semipolar GaN substrate having improved size and crystal quality. A self-standing GaN substrate has an angle between the normal of the principal surface and an m-axis of 0 degrees or more and 20 degrees or less, wherein: the size of the projected image in a c-axis direction when the principal surface is vertically projected on an M-plane is 10 mm or more; and when an a-axis length is measured on an intersection line between the principal surface and an A-plane, a low distortion section with a section length of 6 mm or more and with an a-axis length variation within the section of 10.0×10?5 ? or less is observed.
    Type: Application
    Filed: April 18, 2023
    Publication date: August 10, 2023
    Applicant: Mitsubishi Chemical Corporation
    Inventors: Satoru NAGAO, Yusuke TSUKADA, azunori KAMADA, Shuichi KUBO, Hirotaka IKEDA, Kenji FUJITO, Hideo FUJISAWA, Yutaka MIKAWA, Tae MOCHIZUKI
  • Publication number: 20230203711
    Abstract: Provided are: a GaN crystal used in a substrate for a nitride semiconductor device having a horizontal device structure, such as a GaN-HEMT; and a GaN substrate used for the production of a nitride semiconductor device having a horizontal device structure, such as a GaN-HEMT. The GaN crystal and the GaN substrate each include a surface having an inclination of 10° or less from a (0001) crystal plane and an area of 5 cm2 or more, and have an Mn concentration of 1.0 × 1016 atoms/cm3 or higher but lower than 1.0 × 1019 atoms/cm3 and a total donor impurity concentration of lower than 5.0 × 1016 atoms/cm3.
    Type: Application
    Filed: February 21, 2023
    Publication date: June 29, 2023
    Applicants: MITSUBISHI CHEMICAL CORPORATION, NATIONAL INSTITUTE FOR MATERIALS SCIENCE
    Inventors: Yusuke TSUKADA, Yuichi Oshima, Yuuki Enatsu
  • Patent number: 11670687
    Abstract: A gallium nitride substrate comprising a first main surface and a second main surface opposite thereto, wherein the first main surface is a non-polar or semi-polar plane, a dislocation density measured by a room-temperature cathode luminescence method in the first main surface is 1×104 cm?2 or less, and an averaged dislocation density measured by a room-temperature cathode luminescence method in an optional square region sizing 250 ?m×250 ?m in the first main plan is 1×106 cm?2 or less.
    Type: Grant
    Filed: June 19, 2020
    Date of Patent: June 6, 2023
    Assignee: MITSUBISHI CHEMICAL CORPORATION
    Inventors: Yusuke Tsukada, Shuichi Kubo, Kazunori Kamada, Hideo Fujisawa, Tatsuhiro Ohata, Hirotaka Ikeda, Hajime Matsumoto, Yutaka Mikawa
  • Patent number: 11664428
    Abstract: An object is to provide a nonpolar or semipolar GaN substrate having improved size and crystal quality. A self-standing GaN substrate has an angle between the normal of the principal surface and an m-axis of 0 degrees or more and 20 degrees or less, wherein: the size of the projected image in a c-axis direction when the principal surface is vertically projected on an M-plane is 10 mm or more; and when an a-axis length is measured on an intersection line between the principal surface and an A-plane, a low distortion section with a section length of 6 mm or more and with an a-axis length variation within the section of 10.0×10?5 ? or less is observed.
    Type: Grant
    Filed: April 23, 2021
    Date of Patent: May 30, 2023
    Assignee: Mitsubishi Chemical Corporation
    Inventors: Satoru Nagao, Yusuke Tsukada, Kazunori Kamada, Shuichi Kubo, Hirotaka Ikeda, Kenji Fujito, Hideo Fujisawa, Yutaka Mikawa, Tae Mochizuki
  • Patent number: 11236439
    Abstract: A method for producing a GaN crystal is provided. In the method, front surfaces of a plurality of tiling GaN seeds closely arranged side by side on a flat surface of a plate are planarized. An aggregated seed is formed by arranging the tiling GaN seeds closely side by side on a susceptor of an HVPE apparatus in the same arrangement as when fixed on the plate, with the front planarized surfaces facing upward. A bulk GaN crystal is grown epitaxially on the aggregated seed by an HVPE method.
    Type: Grant
    Filed: September 26, 2019
    Date of Patent: February 1, 2022
    Assignee: MITSUBISHI CHEMICAL CORPORATION
    Inventors: Yusuke Tsukada, Masayuki Tashiro, Hideo Namita
  • Publication number: 20210399096
    Abstract: Strain is used to enhance the properties of p- and n-materials so as to improve the performance of III-N electronic and optoelectronic devices. In one example, transistor devices include a channel aligned along uniaxially strained or relaxed directions of the III-nitride material in the channel. Strain is introduced using buffer layers or source and drain regions of different composition.
    Type: Application
    Filed: November 7, 2019
    Publication date: December 23, 2021
    Applicant: The Regents of the University of California
    Inventors: Umesh K. Mishra, Stacia Keller, Elaheh Ahmadi, Chirag Gupta, Yusuke Tsukada
  • Publication number: 20210273058
    Abstract: An object is to provide a nonpolar or semipolar GaN substrate having improved size and crystal quality. A self-standing GaN substrate has an angle between the normal of the principal surface and an m-axis of 0 degrees or more and 20 degrees or less, wherein: the size of the projected image in a c-axis direction when the principal surface is vertically projected on an M-plane is 10 mm or more; and when an a-axis length is measured on an intersection line between the principal surface and an A-plane, a low distortion section with a section length of 6 mm or more and with an a-axis length variation within the section of 10.0×10?5 ? or less is observed.
    Type: Application
    Filed: April 23, 2021
    Publication date: September 2, 2021
    Applicant: Mitsubishi Chemical Corporation
    Inventors: Satoru NAGAO, Yusuke TSUKADA, Kazunori KAMADA, Shuichi KUBO, Hirotaka IKEDA, Kenji FUJITO, Hideo FUJISAWA, Yutaka MIKAWA, Tae MOCHIZUKI
  • Patent number: 11101725
    Abstract: Provided is a rotary electric machine including: a permanent magnet rotatable around a first rotational shaft and disposed at a distance from a main surface of a moving body rotating or moving, at least a part of a side surface of the permanent magnet continuous to an outer peripheral surface thereof being opposed to the main surface of the moving body, wherein the permanent magnet is rotated around the first rotational shaft by a reaction force acting on the permanent magnet, the reaction force being caused by eddy currents produced in the main surface of the moving body in such a direction as to hinder a change of magnetic flux from the permanent magnet, and a surface speed of the side surface of the permanent magnet opposed to the moving body is lower than a surface speed of the main surface of the moving body opposed thereto.
    Type: Grant
    Filed: December 7, 2017
    Date of Patent: August 24, 2021
    Assignee: NABTESCO CORPORATION
    Inventors: Michael Flankl, Arda Tueysuez, Johann W. Kolar, Yusuke Tsukada, Kazuhito Nakamura
  • Patent number: 11038024
    Abstract: An object is to provide a nonpolar or semipolar GaN substrate having improved size and crystal quality. A self-standing GaN substrate has an angle between the normal of the principal surface and an m-axis of 0 degrees or more and 20 degrees or less, wherein: the size of the projected image in a c-axis direction when the principal surface is vertically projected on an M-plane is 10 mm or more; and when an a-axis length is measured on an intersection line between the principal surface and an A-plane, a low distortion section with a section length of 6 mm or more and with an a-axis length variation within the section of 10.0×10?5 ? or less is observed.
    Type: Grant
    Filed: June 18, 2019
    Date of Patent: June 15, 2021
    Assignee: Mitsubishi Chemical Corporation
    Inventors: Satoru Nagao, Yusuke Tsukada, Kazunori Kamada, Shuichi Kubo, Hirotaka Ikeda, Kenji Fujito, Hideo Fujisawa, Yutaka Mikawa, Tae Mochizuki
  • Patent number: 11031475
    Abstract: An object is to provide a nonpolar or semipolar GaN substrate having improved size and crystal quality. A self-standing GaN substrate has an angle between the normal of the principal surface and an m-axis of 0 degrees or more and 20 degrees or less, wherein: the size of the projected image in a c-axis direction when the principal surface is vertically projected on an M-plane is 10 mm or more; and when an a-axis length is measured on an intersection line between the principal surface and an A-plane, a low distortion section with a section length of 6 mm or more and with an a-axis length variation within the section of 10.0×10 ?5 ? or less is observed.
    Type: Grant
    Filed: September 18, 2019
    Date of Patent: June 8, 2021
    Assignee: Mitsubishi Chemical Corporation
    Inventors: Satoru Nagao, Yusuke Tsukada, Kazunori Kamada, Shuichi Kubo, Hirotaka Ikeda, Kenji Fujito, Hideo Fujisawa, Yutaka Mikawa, Tae Mochizuki
  • Publication number: 20200321438
    Abstract: A gallium nitride substrate comprising a first main surface and a second main surface opposite thereto, wherein the first main surface is a non-polar or semi-polar plane, a dislocation density measured by a room-temperature cathode luminescence method in the first main surface is 1×104 cm?2 or less, and an averaged dislocation density measured by a room-temperature cathode luminescence method in an optional square region sizing 250 ?m×250 ?m in the first main plan is 1×106 cm?2 or less.
    Type: Application
    Filed: June 19, 2020
    Publication date: October 8, 2020
    Applicant: MITSUBISHI CHEMICAL CORPORATION
    Inventors: Yusuke Tsukada, Shuichi Kubo, Kazunori Kamada, Hideo Fujisawa, Tatsuhiro Ohata, Hirotaka Ikeda, Hajime Matsumoto, Yutaka Mikawa
  • Patent number: 10734485
    Abstract: The main purpose of the present invention is to provide: a nonpolar or semipolar GaN substrate, in which a nitride semiconductor crystal having a low stacking fault density can be epitaxially grown on the main surface of the substrate, and a technique required for the production of the substrate. This invention provides: a method for manufacturing an M-plane GaN substrate comprising; forming a mask pattern having a line-shaped opening parallel to an a-axis of a C-plane GaN substrate on an N-polar plane of the C-plane GaN substrate, growing a plane-shape GaN crystal of which thickness direction is an m-axis direction from the opening of the mask pattern by an ammonotharmal method, and cutting out the M-plane GaN substrate from the plane-shape GaN crystal.
    Type: Grant
    Filed: March 29, 2017
    Date of Patent: August 4, 2020
    Assignee: MITSUBISHI CHEMICAL CORPORATION
    Inventors: Yusuke Tsukada, Shuichi Kubo, Kazunori Kamada, Hideo Fujisawa, Tatsuhiro Ohata, Hirotaka Ikeda, Hajime Matsumoto, Yutaka Mikawa
  • Patent number: 10655244
    Abstract: A disc-like GaN substrate is a substrate produced by a tiling method and having an angel between the normal line and m-axis on the main surface of the substrate of 0 to 20° inclusive and a diameter of 45 to 55 mm, to 4 or less. In a preferred embodiment, a disc-like GaN substrate has a first main surface and a second main surface that is opposite to the first main surface, and which has an angle between the normal line and m-axis on the first main surface of 0 to 20° inclusive and a diameter of 45 mm or more. The disc-like GaN substrate comprises at least four crystalline regions each being exposed to both of the first main surface and the second main surface, wherein the four crystalline regions are arranged in line along the direction of the orthogonal projection of c-axis on the first main surface.
    Type: Grant
    Filed: July 13, 2018
    Date of Patent: May 19, 2020
    Assignee: MITSUBISHI CHEMICAL CORPORATION
    Inventors: Yusuke Tsukada, Satoru Nagao, Kazunori Kamada, Masayuki Tashiro, Kenji Fujito, Hideo Fujisawa, Yutaka Mikawa, Tetsuharu Kajimoto, Takashi Fukada
  • Patent number: 10612161
    Abstract: A disk-shaped GaN substrate has a diameter of 2 inches or more has a front surface tilted with a tilt angle of 45° or more and 135° or less relative to the (0001) plane in a tilt direction within a range of ±5° around the <10-10> direction, and a back surface which is a main surface opposite to the front surface. The GaN substrate has a first point positioned in a direction perpendicular to the c-axis when viewed from the center thereof, on the side surface thereof. A single diffraction peak appears in an X-ray diffraction pattern obtained by ? scan in which an X-ray (CuK?1: wavelength: 0.1542 nm) is incident to the first point and the incident angle ? of the incident X-ray is varied while the 2? angle of the diffracted X-ray is fixed to twice the Bragg angle of 28.99° of the {11-20} plane.
    Type: Grant
    Filed: June 16, 2017
    Date of Patent: April 7, 2020
    Assignee: MITSUBISHI CHEMICAL CORPORATION
    Inventors: Tetsuharu Kajimoto, Yusuke Tsukada, Masayuki Tashiro
  • Publication number: 20200032420
    Abstract: A method for producing a GaN crystal is provided. In the method, front surfaces of a plurality of tiling GaN seeds closely arranged side by side on a flat surface of a plate are planarized. An aggregated seed is formed by arranging the tiling GaN seeds closely side by side on a susceptor of an HVPE apparatus in the same arrangement as when fixed on the plate, with the front planarized surfaces facing upward. A bulk GaN crystal is grown epitaxially on the aggregated seed by an HVPE method.
    Type: Application
    Filed: September 26, 2019
    Publication date: January 30, 2020
    Applicant: MITSUBISHI CHEMICAL CORPORATION
    Inventors: Yusuke TSUKADA, Masayuki TASHIRO, Hideo NAMITA