Abstract: The disclosure describes the use of strain to enhance the properties of p- and n-materials so as to improve the performance of III-N electronic and optoelectronic devices. In one example, transistor devices include a channel aligned along uniaxially strained or relaxed directions of the III-nitride material in the channel.

Abstract: The disclosure is detecting an authentication target who is moving in a predetermined direction in a video; inputting a first image in which an entire body of the target; calculating characteristic information from an image of the entire body in the first image, comparing the calculated characteristic information with characteristic information of the entire body stored in first memory that stores characteristic information of entire bodies of targets, and extracting candidate information of the targets from the first memory based on a first authentication result; inputting a second image in which an iris of the target; and comparing characteristic information of irises stored in second memory that stores the characteristic information of the irises of targets with characteristic information of an iris from the second image, calculating a verification score, executing second authentication on the target in the second image based on the verification score, and outputting an authentication result.

Abstract: The disclosure is detecting an authentication target who is moving in a predetermined direction in a video; inputting a first image in which an entire body of the target; calculating characteristic information from an image of the entire body in the first image, comparing the calculated characteristic information with characteristic information of the entire body stored in first memory that stores characteristic information of entire bodies of targets, and extracting candidate information of the targets from the first memory based on a first authentication result; inputting a second image in which an iris of the target; and comparing characteristic information of irises stored in second memory that stores the characteristic information of the irises of targets with characteristic information of an iris from the second image, calculating a verification score, executing second authentication on the target in the second image based on the verification score, and outputting an authentication result.

Abstract: A liquid delivery pump delivers a liquid with high flow rate accuracy in consideration of solvent expansion, pressure dependent leakage of the solvent, and flow rate dependent leakage of the solvent. A liquid delivery pump includes first and second plunger pumps connected together, having respective first and second plungers. A pressure sensor measures a liquid delivery pressure (P2) from the second plunger pump, and a controller controls the driving of the first and second plungers. The controller obtains a moving speed (v1) of the first plunger and a moving speed (v2) of the second plunger using a parameter (C1, C0) depending on the liquid delivery pressures (P1, P2), the liquid delivery pressure, and a target flow rate of the liquid. The parameter (C1, C0) is a parameter of an expression representing a relationship between the liquid delivery pressure (P2) and a flow rate (Q0) of the liquid.

Abstract: An authentication device includes an image acquisition unit, an identification unit, and an authentication unit. The image acquisition unit acquires an image of an eye of a subject. The identification unit identifies the colored pattern of a colored contact lens worn by the subject by comparing a reference image with the image of the eye. The authentication unit identifies the subject, using a feature in a region other than a colored region of the colored pattern in the iris region of the eye.

Abstract: An authentication device includes an image acquisition unit, an identification unit, and an authentication unit. The image acquisition unit acquires an image of an eye of a subject. The identification unit identifies the colored pattern of a colored contact lens worn by the subject by comparing a reference image with the image of the eye. The authentication unit identifies the subject, using a feature in a region other than a colored region of the colored pattern in the iris region of the eye.

Abstract: An object is to provide a nonpolar or semipolar GaN substrate having improved size and crystal quality. A self-standing GaN substrate has an angle between the normal of the principal surface and an m-axis of 0 degrees or more and 20 degrees or less, wherein: the size of the projected image in a c-axis direction when the principal surface is vertically projected on an M-plane is 10 mm or more; and when an a-axis length is measured on an intersection line between the principal surface and an A-plane, a low distortion section with a section length of 6 mm or more and with an a-axis length variation within the section of 10.0×10?5 ? or less is observed.

Abstract: An object is to provide a nonpolar or semipolar GaN substrate having improved size and crystal quality. A self-standing GaN substrate has an angle between the normal of the principal surface and an m-axis of 0 degrees or more and 20 degrees or less, wherein: the size of the projected image in a c-axis direction when the principal surface is vertically projected on an M-plane is 10 mm or more; and when an a-axis length is measured on an intersection line between the principal surface and an A-plane, a low distortion section with a section length of 6 mm or more and with an a-axis length variation within the section of 10.0×10?5 ? or less is observed.

Abstract: Provided are: a GaN crystal used in a substrate for a nitride semiconductor device having a horizontal device structure, such as a GaN-HEMT; and a GaN substrate used for the production of a nitride semiconductor device having a horizontal device structure, such as a GaN-HEMT. The GaN crystal and the GaN substrate each include a surface having an inclination of 10° or less from a (0001) crystal plane and an area of 5 cm2 or more, and have an Mn concentration of 1.0 × 1016 atoms/cm3 or higher but lower than 1.0 × 1019 atoms/cm3 and a total donor impurity concentration of lower than 5.0 × 1016 atoms/cm3.

Abstract: A gallium nitride substrate comprising a first main surface and a second main surface opposite thereto, wherein the first main surface is a non-polar or semi-polar plane, a dislocation density measured by a room-temperature cathode luminescence method in the first main surface is 1×104 cm?2 or less, and an averaged dislocation density measured by a room-temperature cathode luminescence method in an optional square region sizing 250 ?m×250 ?m in the first main plan is 1×106 cm?2 or less.

Abstract: An object is to provide a nonpolar or semipolar GaN substrate having improved size and crystal quality. A self-standing GaN substrate has an angle between the normal of the principal surface and an m-axis of 0 degrees or more and 20 degrees or less, wherein: the size of the projected image in a c-axis direction when the principal surface is vertically projected on an M-plane is 10 mm or more; and when an a-axis length is measured on an intersection line between the principal surface and an A-plane, a low distortion section with a section length of 6 mm or more and with an a-axis length variation within the section of 10.0×10?5 ? or less is observed.

Abstract: A method for producing a GaN crystal is provided. In the method, front surfaces of a plurality of tiling GaN seeds closely arranged side by side on a flat surface of a plate are planarized. An aggregated seed is formed by arranging the tiling GaN seeds closely side by side on a susceptor of an HVPE apparatus in the same arrangement as when fixed on the plate, with the front planarized surfaces facing upward. A bulk GaN crystal is grown epitaxially on the aggregated seed by an HVPE method.

Abstract: Strain is used to enhance the properties of p- and n-materials so as to improve the performance of III-N electronic and optoelectronic devices. In one example, transistor devices include a channel aligned along uniaxially strained or relaxed directions of the III-nitride material in the channel. Strain is introduced using buffer layers or source and drain regions of different composition.

Abstract: An object is to provide a nonpolar or semipolar GaN substrate having improved size and crystal quality. A self-standing GaN substrate has an angle between the normal of the principal surface and an m-axis of 0 degrees or more and 20 degrees or less, wherein: the size of the projected image in a c-axis direction when the principal surface is vertically projected on an M-plane is 10 mm or more; and when an a-axis length is measured on an intersection line between the principal surface and an A-plane, a low distortion section with a section length of 6 mm or more and with an a-axis length variation within the section of 10.0×10?5 ? or less is observed.

Abstract: Provided is a rotary electric machine including: a permanent magnet rotatable around a first rotational shaft and disposed at a distance from a main surface of a moving body rotating or moving, at least a part of a side surface of the permanent magnet continuous to an outer peripheral surface thereof being opposed to the main surface of the moving body, wherein the permanent magnet is rotated around the first rotational shaft by a reaction force acting on the permanent magnet, the reaction force being caused by eddy currents produced in the main surface of the moving body in such a direction as to hinder a change of magnetic flux from the permanent magnet, and a surface speed of the side surface of the permanent magnet opposed to the moving body is lower than a surface speed of the main surface of the moving body opposed thereto.

Abstract: An object is to provide a nonpolar or semipolar GaN substrate having improved size and crystal quality. A self-standing GaN substrate has an angle between the normal of the principal surface and an m-axis of 0 degrees or more and 20 degrees or less, wherein: the size of the projected image in a c-axis direction when the principal surface is vertically projected on an M-plane is 10 mm or more; and when an a-axis length is measured on an intersection line between the principal surface and an A-plane, a low distortion section with a section length of 6 mm or more and with an a-axis length variation within the section of 10.0×10?5 ? or less is observed.

Abstract: An object is to provide a nonpolar or semipolar GaN substrate having improved size and crystal quality. A self-standing GaN substrate has an angle between the normal of the principal surface and an m-axis of 0 degrees or more and 20 degrees or less, wherein: the size of the projected image in a c-axis direction when the principal surface is vertically projected on an M-plane is 10 mm or more; and when an a-axis length is measured on an intersection line between the principal surface and an A-plane, a low distortion section with a section length of 6 mm or more and with an a-axis length variation within the section of 10.0×10 ?5 ? or less is observed.

Abstract: A gallium nitride substrate comprising a first main surface and a second main surface opposite thereto, wherein the first main surface is a non-polar or semi-polar plane, a dislocation density measured by a room-temperature cathode luminescence method in the first main surface is 1×104 cm?2 or less, and an averaged dislocation density measured by a room-temperature cathode luminescence method in an optional square region sizing 250 ?m×250 ?m in the first main plan is 1×106 cm?2 or less.

Abstract: The main purpose of the present invention is to provide: a nonpolar or semipolar GaN substrate, in which a nitride semiconductor crystal having a low stacking fault density can be epitaxially grown on the main surface of the substrate, and a technique required for the production of the substrate. This invention provides: a method for manufacturing an M-plane GaN substrate comprising; forming a mask pattern having a line-shaped opening parallel to an a-axis of a C-plane GaN substrate on an N-polar plane of the C-plane GaN substrate, growing a plane-shape GaN crystal of which thickness direction is an m-axis direction from the opening of the mask pattern by an ammonotharmal method, and cutting out the M-plane GaN substrate from the plane-shape GaN crystal.

Abstract: A disc-like GaN substrate is a substrate produced by a tiling method and having an angel between the normal line and m-axis on the main surface of the substrate of 0 to 20° inclusive and a diameter of 45 to 55 mm, to 4 or less. In a preferred embodiment, a disc-like GaN substrate has a first main surface and a second main surface that is opposite to the first main surface, and which has an angle between the normal line and m-axis on the first main surface of 0 to 20° inclusive and a diameter of 45 mm or more. The disc-like GaN substrate comprises at least four crystalline regions each being exposed to both of the first main surface and the second main surface, wherein the four crystalline regions are arranged in line along the direction of the orthogonal projection of c-axis on the first main surface.