Abstract: The present invention relates to a liquid feeding apparatus capable of feeding a liquid with high accuracy. The liquid feeding apparatus includes a liquid feeder having a downstream side, a plunger, and a cylinder that is configured for aspirating and discharging a solvent when a plunger slides. The liquid feeding apparatus further includes a pressure sensor for the solvent to be discharged, a selector valve configured to switch between a plurality of solvents to be aspirated and discharged, and a controller configured to control the liquid feeder and the selector valve. The controller controls the selector valve in synchronization with an aspiration operation of the plunger so that a mixing ratio of the solvents changes, controls the plunger to cause the plunger to operate at first and second accelerations that are different from each other, and suppresses a fluctuation of the solvent to be aspirated by the plunger.

Abstract: An information providing device according to one aspect of the present disclosure includes: at least one memory storing a set of instructions; and at least one processor configured to execute the set of instructions to: receive a face image; determine whether a person in the face image is unsuitable for iris data acquisition based on the face image; and output information based on determining that the person is unsuitable for the iris data acquisition when the person is determined to be unsuitable for the iris data acquisition.

Abstract: An authentication device includes an image acquisition unit, an identification unit, and an authentication unit. The image acquisition unit acquires an image of an eye of a subject. The identification unit identifies the colored pattern of a colored contact lens worn by the subject by comparing a reference image with the image of the eye. The authentication unit identifies the subject, using a feature in a region other than a colored region of the colored pattern in the iris region of the eye.

Abstract: An object is to provide a nonpolar or semipolar GaN substrate having improved size and crystal quality. A self-standing GaN substrate has an angle between the normal of the principal surface and an m-axis of 0 degrees or more and 20 degrees or less, wherein: the size of the projected image in a c-axis direction when the principal surface is vertically projected on an M-plane is 10 mm or more; and when an a-axis length is measured on an intersection line between the principal surface and an A-plane, a low distortion section with a section length of 6 mm or more and with an a-axis length variation within the section of 10.0×10?5 ? or less is observed.

Abstract: A molding machine management system includes a molding machine molding a plurality of molded products using a molding mold having a plurality of cavities, a camera capturing a plurality of first images of the plurality of molded products, respectively, and an inspection device inspecting the plurality of molded products. The plurality of first images, a second image of a parting surface of the molding mold, a plurality of inspection results corresponding to the plurality of molded products, and information on the plurality of cavities are displayed on the same screen of a display. The plurality of molded products in the plurality of first images are respectively displayed to overlap positions of corresponding cavities of the plurality of cavities of the parting surface in the second image.

Abstract: An accounting system according to the present invention include: an information display device including a first memory; and at least one first processor coupled to the first memory. The first processor performs first operations. The first operations includes: causing a first camera to image a person, and causes a display to display a code based on physical characteristics peculiar to the imaged person. An information processing device includes a second memory; and at least one second processor coupled to the second memory. The second processor performs second operations. The second operations includes: causing a second camera to image the code displayed by the information display device, acquiring accounting information of the person using the imaged code, and executing accounting processing using the accounting information.

Abstract: An authentication device includes an image acquisition unit, an identification unit, and an authentication unit. The image acquisition unit acquires an image of an eye of a subject. The identification unit identifies the colored pattern of a colored contact lens worn by the subject by comparing a reference image with the image of the eye. The authentication unit identifies the subject, using a feature in a region other than a colored region of the colored pattern in the iris region of the eye.

Abstract: To provide a system, a method and the like for acquiring more images or more quickly focused images. A control device acquires information regarding a situation of a range captured by an imaging device, determines a mode according to an assumed situation of the range captured by the imaging device among a plurality of focusing modes, and transmits designation information specifying the determined mode to the imaging device. The imaging device receives the designation information from the control device, and captures an image using the mode specified by the received designation information.

Abstract: An information providing device according to one aspect of the present disclosure includes: at least one memory storing a set of instructions; and at least one processor configured to execute the set of instructions to: receive a face image; determine whether a person in the face image is unsuitable for iris data acquisition based on the face image; and output information based on determining that the person is unsuitable for the iris data acquisition when the person is determined to be unsuitable for the iris data acquisition.

Abstract: An object is to provide a nonpolar or semipolar GaN substrate having improved size and crystal quality. A self-standing GaN substrate has an angle between the normal of the principal surface and an m-axis of 0 degrees or more and 20 degrees or less, wherein: the size of the projected image in a c-axis direction when the principal surface is vertically projected on an M-plane is 10 mm or more; and when an a-axis length is measured on an intersection line between the principal surface and an A-plane, a low distortion section with a section length of 6 mm or more and with an a-axis length variation within the section of 10.0×10?5 ? or less is observed.

Abstract: Provided are: a GaN crystal used in a substrate for a nitride semiconductor device having a horizontal device structure, such as a GaN-HEMT; and a GaN substrate used for the production of a nitride semiconductor device having a horizontal device structure, such as a GaN-HEMT. The GaN crystal and the GaN substrate each include a surface having an inclination of 10° or less from a (0001) crystal plane and an area of 5 cm2 or more, and have an Mn concentration of 1.0 × 1016 atoms/cm3 or higher but lower than 1.0 × 1019 atoms/cm3 and a total donor impurity concentration of lower than 5.0 × 1016 atoms/cm3.

Abstract: A gallium nitride substrate comprising a first main surface and a second main surface opposite thereto, wherein the first main surface is a non-polar or semi-polar plane, a dislocation density measured by a room-temperature cathode luminescence method in the first main surface is 1×104 cm?2 or less, and an averaged dislocation density measured by a room-temperature cathode luminescence method in an optional square region sizing 250 ?m×250 ?m in the first main plan is 1×106 cm?2 or less.

Abstract: An object is to provide a nonpolar or semipolar GaN substrate having improved size and crystal quality. A self-standing GaN substrate has an angle between the normal of the principal surface and an m-axis of 0 degrees or more and 20 degrees or less, wherein: the size of the projected image in a c-axis direction when the principal surface is vertically projected on an M-plane is 10 mm or more; and when an a-axis length is measured on an intersection line between the principal surface and an A-plane, a low distortion section with a section length of 6 mm or more and with an a-axis length variation within the section of 10.0×10?5 ? or less is observed.

Abstract: A method for producing a GaN crystal is provided. In the method, front surfaces of a plurality of tiling GaN seeds closely arranged side by side on a flat surface of a plate are planarized. An aggregated seed is formed by arranging the tiling GaN seeds closely side by side on a susceptor of an HVPE apparatus in the same arrangement as when fixed on the plate, with the front planarized surfaces facing upward. A bulk GaN crystal is grown epitaxially on the aggregated seed by an HVPE method.

Abstract: Strain is used to enhance the properties of p- and n-materials so as to improve the performance of III-N electronic and optoelectronic devices. In one example, transistor devices include a channel aligned along uniaxially strained or relaxed directions of the III-nitride material in the channel. Strain is introduced using buffer layers or source and drain regions of different composition.

Abstract: An object is to provide a nonpolar or semipolar GaN substrate having improved size and crystal quality. A self-standing GaN substrate has an angle between the normal of the principal surface and an m-axis of 0 degrees or more and 20 degrees or less, wherein: the size of the projected image in a c-axis direction when the principal surface is vertically projected on an M-plane is 10 mm or more; and when an a-axis length is measured on an intersection line between the principal surface and an A-plane, a low distortion section with a section length of 6 mm or more and with an a-axis length variation within the section of 10.0×10?5 ? or less is observed.

Abstract: Provided is a rotary electric machine including: a permanent magnet rotatable around a first rotational shaft and disposed at a distance from a main surface of a moving body rotating or moving, at least a part of a side surface of the permanent magnet continuous to an outer peripheral surface thereof being opposed to the main surface of the moving body, wherein the permanent magnet is rotated around the first rotational shaft by a reaction force acting on the permanent magnet, the reaction force being caused by eddy currents produced in the main surface of the moving body in such a direction as to hinder a change of magnetic flux from the permanent magnet, and a surface speed of the side surface of the permanent magnet opposed to the moving body is lower than a surface speed of the main surface of the moving body opposed thereto.