Abstract: An object is to provide a nonpolar or semipolar GaN substrate having improved size and crystal quality. A self-standing GaN substrate has an angle between the normal of the principal surface and an m-axis of 0 degrees or more and 20 degrees or less, wherein: the size of the projected image in a c-axis direction when the principal surface is vertically projected on an M-plane is 10 mm or more; and when an a-axis length is measured on an intersection line between the principal surface and an A-plane, a low distortion section with a section length of 6 mm or more and with an a-axis length variation within the section of 10.0×10?5 ? or less is observed.

Abstract: A non-contact power generator includes: a magnet disposed at a distance to a main surface of a moving body that moves in one direction and the opposite direction, and the magnet generating a magnetic flux passing the main surface; a coil being separated from a surface of the magnet that faces away from the main surface, the coil being linked with the magnetic flux from the magnet; and a magnetic flux guide member disposed in a part of a magnetic path of the magnetic flux linked with the coil. The magnet is moved along the shaft in the moving direction of the moving body at a speed lower than the speed of the moving body by a reaction force acting on the magnet on a basis of eddy currents generated in the main surface in such a direction as to hinder a change of the magnetic flux from the magnet.

Abstract: A disc-like GaN substrate is a substrate produced by a tiling method and having an angel between the normal line and m-axis on the main surface of the substrate of 0 to 20° inclusive and a diameter of 45 to 55 mm, to 4 or less. In a preferred embodiment, a disc-like GaN substrate has a first main surface and a second main surface that is opposite to the first main surface, and which has an angle between the normal line and m-axis on the first main surface of 0 to 20° inclusive and a diameter of 45 mm or more. The disc-like GaN substrate comprises at least four crystalline regions each being exposed to both of the first main surface and the second main surface, wherein the four crystalline regions are arranged in line along the direction of the orthogonal projection of c-axis on the first main surface.

Abstract: A disc-like GaN substrate is a substrate produced by a tiling method and having an angel between the normal line and m-axis on the main surface of the substrate of 0 to 20° inclusive and a diameter of 45 to 55 mm, to 4 or less. In a preferred embodiment, a disc-like GaN substrate has a first main surface and a second main surface that is opposite to the first main surface, and which has an angle between the normal line and m-axis on the first main surface of 0 to 20° inclusive and a diameter of 45 mm or more. The disc-like GaN substrate comprises at least four crystalline regions each being exposed to both of the first main surface and the second main surface, wherein the four crystalline regions are arranged in line along the direction of the orthogonal projection of c-axis on the first main surface.

Abstract: Provided is a rotary electric machine including: a permanent magnet rotatable around a first rotational shaft and disposed at a distance from a main surface of a moving body rotating or moving, at least a part of a side surface of the permanent magnet continuous to an outer peripheral surface thereof being opposed to the main surface of the moving body, wherein the permanent magnet is rotated around the first rotational shaft by a reaction force acting on the permanent magnet, the reaction force being caused by eddy currents produced in the main surface of the moving body in such a direction as to hinder a change of magnetic flux from the permanent magnet, and a surface speed of the side surface of the permanent magnet opposed to the moving body is lower than a surface speed of the main surface of the moving body opposed thereto.

Abstract: A non-contact power generator includes: a magnet disposed at a distance to a main surface of a moving body that moves in one direction and the opposite direction, and the magnet generating a magnetic flux passing the main surface; a coil being separated from a surface of the magnet that faces away from the main surface, the coil being linked with the magnetic flux from the magnet; and a magnetic flux guide member disposed in a part of a magnetic path of the magnetic flux linked with the coil. The magnet is moved along the shaft in the moving direction of the moving body at a speed lower than the speed of the moving body by a reaction force acting on the magnet on a basis of eddy currents generated in the main surface in such a direction as to hinder a change of the magnetic flux from the magnet.

Abstract: A non-polar or semi-polar GaN wafer in which a lower-crystallinity band present on a main surface has a reduced width. The GaN wafer includes a first main surface and a second main surface on a side opposite to the first main surface. The first main surface is parallel to or tilted relative to the M-plane. When the tilt, if exists, is decomposed into the a-axis direction component and the c-axis direction component, the a-axis direction component has an absolute value of 5° or less while the c-axis direction component has an absolute value of 45° or less. The GaN wafer includes a lower-crystallinity band extending on the first main surface in a direction perpendicular to the c-axis, and the lower-crystallinity band has a width of less than 190 ?m.

Abstract: A disk-shaped GaN substrate has a diameter of 2 inches or more has a front surface tilted with a tilt angle of 45° or more and 135° or less relative to the (0001) plane in a tilt direction within a range of ±5° around the <10-10> direction, and a back surface which is a main surface opposite to the front surface. The GaN substrate has a first point positioned in a direction perpendicular to the c-axis when viewed from the center thereof, on the side surface thereof. A single diffraction peak appears in an X-ray diffraction pattern obtained by ? scan in which an X-ray (CuK?1: wavelength: 0.1542 nm) is incident to the first point and the incident angle ? of the incident X-ray is varied while the 2? angle of the diffracted X-ray is fixed to twice the Bragg angle of 28.99° of the {11-20} plane.

Abstract: The main purpose of the present invention is to provide: a nonpolar or semipolar GaN substrate, in which a nitride semiconductor crystal having a low stacking fault density can be epitaxially grown on the main surface of the substrate, and a technique required for the production of the substrate. This invention provides: a method for manufacturing an M-plane GaN substrate comprising; forming a mask pattern having a line-shaped opening parallel to an a-axis of a C-plane GaN substrate on an N-polar plane of the C-plane GaN substrate, growing a plane-shape GaN crystal of which thickness direction is an m-axis direction from the opening of the mask pattern by an ammonotharmal method, and cutting out the M-plane GaN substrate from the plane-shape GaN crystal.

Abstract: The invention provides a nonpolar or semipolar GaN substrate, in which a nitride semiconductor crystal having a low stacking fault density can be epitaxially grown on the main surface of the substrate, and a method for manufacturing an M-plane GaN substrate by forming a mask pattern having a line-shaped opening parallel to an a-axis of a C-plane GaN substrate on an N-polar plane of the C-plane GaN substrate, growing a plane-shape GaN crystal of which thickness direction is an m-axis direction from the opening of the mask pattern by an ammonothermal method, and cutting out the M-plane GaN substrate from the plane-shape GaN crystal.

Abstract: A disc-like GaN substrate is a substrate produced by a tiling method and having an angel between the normal line and m-axis on the main surface of the substrate of 0 to 20° inclusive and a diameter of 45 to 55 mm, to 4 or less. In a preferred embodiment, a disc-like GaN substrate has a first main surface and a second main surface that is opposite to the first main surface, and which has an angle between the normal line and m-axis on the first main surface of 0 to 20° inclusive and a diameter of 45 mm or more. The disc-like GaN substrate comprises at least four crystalline regions each being exposed to both of the first main surface and the second main surface, wherein the four crystalline regions are arranged in line along the direction of the orthogonal projection of c-axis on the first main surface.

Abstract: An object is to provide a nonpolar or semipolar GaN substrate having improved size and crystal quality. A self-standing GaN substrate has an angle between the normal of the principal surface and an m-axis of 0 degrees or more and 20 degrees or less, wherein: the size of the projected image in a c-axis direction when the principal surface is vertically projected on an M-plane is 10 mm or more; and when an a-axis length is measured on an intersection line between the principal surface and an A-plane, a low distortion section with a section length of 6 mm or more and with an a-axis length variation within the section of 10.0×10?5 ? or less is observed.

Abstract: Biocompatible nanoparticles 1 which entrap a bioactive substance and whose surface is positive-charge-modified are electrically adhered to a balloon portion 9 of a catheter main body 5 through a negatively charged resin layer 11, and thus a nanoparticle layer 12 is formed. After the catheter main body 5 is indwell in vivo, the nanoparticles 1 are gradually eluted from the nanoparticle layer 12 and are effectively delivered to cells.

Abstract: The main purpose of the present invention is to provide: a nonpolar or semipolar GaN substrate, in which a nitride semiconductor crystal having a low stacking fault density can be epitaxially grown on the main surface of the substrate, and a technique required for the production of the substrate. This invention provides: a method for manufacturing an M-plane GaN substrate comprising; forming a mask pattern having a line-shaped opening parallel to an a-axis of a C-plane GaN substrate on an N-polar plane of the C-plane GaN substrate, growing a plane-shape GaN crystal of which thickness direction is an m-axis direction from the opening of the mask pattern by an ammonotharmal method, and cutting out the M-plane GaN substrate from the plane-shape GaN crystal.

Abstract: The present invention provides a medical device for placement into a lumen such as a stent and a catheter whose surface is uniformly and sufficiently coated with a drug, and a process thereof with easy way and with low cost. The medical device is coated with mixed particles of drug particles whose surface is modified with positive-charge and biocompatible nanoparticles. In the invention, a drug can be taken into a cell through the dissolution of the drug particle together with the biocompatible nanoparticle after a DES is placed in a biological body.

Abstract: A pharmaceutical preparation comprises nano-level particles (nanospheres) of a biocompatible polymer having, as held on their surfaces, an NF?B decoy capable of binding to NF?B to inhibit its activity. With penetration of the nanoparticles inside cells, the NF?B decoy may be delivered to an affected site and the NF?B decoy may be released from the surfaces of the nanoparticles and may be thereby efficiently and specifically introduced into the affected site.

Abstract: Biocompatible nanoparticles 1 which entrap a bioactive substance and whose surface is positive-charge-modified are electrically adhered to a balloon portion 9 of a catheter main body 5 through a negatively charged resin layer 11, and thus a nanoparticle layer 12 is formed. After the catheter main body 5 is indwell in vivo, the nanoparticles 1 are gradually eluted from the nanoparticle layer 12 and are effectively delivered to cells.

Abstract: A pharmaceutical preparation comprises nano-level particles (nanospheres) of a biocompatible polymer having, as held on their surfaces, an NF?B decoy capable of binding to NF?B to inhibit its activity. With penetration of the nanoparticles inside cells, the NF?B decoy may be delivered to an affected site and the NF?B decoy may be released from the surfaces of the nanoparticles and may be thereby efficiently and specifically introduced into the affected site.