Abstract: An optical device includes a metal reflective layer substantially made of a metal material, a first light transmissive layer disposed on the metal reflective layer, an optical multilayer reflective film disposed on the first light transmissive layer and including a plurality of sublayers stacked on each other and having different refractive indexes, and a wavelength converting layer disposed on the optical multilayer reflective film and containing a fluorescent material capable of absorbing incident excitation light and generating fluorescent light having a lower energy. The wavelength converting layer is capable of generating mixed light containing the excitation light and the fluorescent light in response to irradiation with the excitation light.

Abstract: An optical device includes a metal reflective layer substantially made of a metal material, a first light transmissive layer disposed on the metal reflective layer, an optical multilayer reflective film disposed on the first light transmissive layer and including a plurality of sublayers stacked on each other and having different refractive indexes, and a wavelength converting layer disposed on the optical multilayer reflective film and containing a fluorescent material capable of absorbing incident excitation light and generating fluorescent light having a lower energy. The wavelength converting layer is capable of generating mixed light containing the excitation light and the fluorescent light in response to irradiation with the excitation light.

Abstract: A vertical cavity surface emitting device includes a substrate, a first multilayer film reflecting mirror, a first semiconductor layer having a first conductivity type, a light-emitting layer, a second semiconductor layer having a second conductivity type opposite of the first conductivity type, and having an upper surface with a projection, an insulating layer that covers the upper surface of the second semiconductor layer and has an opening that exposes the second semiconductor layer on the upper surface of the projection terminated on the upper surface of the projection of the second semiconductor layer, a transmissive electrode layer that covers the upper surface of the second semiconductor layer exposed from the opening of the insulating layer and is formed on the insulating layer, and a second multilayer film reflecting mirror formed on the transmissive electrode layer and constituting a resonator together with the first multilayer film reflecting mirror.

Abstract: An illumination device includes a light source configured to generate primary light having a Gaussian intensity distribution, an intensity-distribution converting member configured to convert the primary light to generate secondary light having a top-hat type intensity distribution, a wavelength converter configured to receive the secondary light from a light-receiving surface, generate tertiary light including the secondary light and wavelength-converted light in which a wavelength of the secondary light has been converted, and emit the tertiary light from an emission surface, and an antenna array having a plurality of optical antennas formed on the emission surface of the wavelength converter and arranged at a period larger than an optical wavelength of the secondary light in the wavelength converter.

Abstract: A wavelength conversion device includes: a wavelength conversion element having a phosphor plate that converts the wavelength of incident light upon a light incident surface to generate wavelength-converted light, and emits the wavelength-converted light from a light emission surface; an antenna array constituted of a plurality of optical antennas that are periodically arranged on the light emission surface of the phosphor plate; and a recessed structure including at least one recessed portion provided in the light emission surface of the phosphor plate.

Abstract: An illumination device includes a light source configured to generate primary light having a Gaussian intensity distribution, an intensity-distribution converting member configured to convert the primary light to generate secondary light having a top-hat type intensity distribution, a wavelength converter configured to receive the secondary light from a light-receiving surface, generate tertiary light including the secondary light and wavelength-converted light in which a wavelength of the secondary light has been converted, and emit the tertiary light from an emission surface, and an antenna array having a plurality of optical antennas formed on the emission surface of the wavelength converter and arranged at a period larger than an optical wavelength of the secondary light in the wavelength converter.

Abstract: A lighting apparatus includes a laser source configured to emit a laser beam, a homogenizer optical element that includes a light flux dividing section disposed to face the laser source, configured to divide the laser beam into a plurality of separate laser beams in a plane and make advancing directions of the plurality of separate laser beams different from each other, and a light flux superimposing section formed integrally with the light flux dividing section and superimposing the plurality of separate laser beams on each other in a common radiation region, and a fluorescent material disposed to face the homogenizer optical element, excited by the plurality of separate laser beams superimposed in the radiation region using the light flux superimposing section so as to emit fluorescence.

Abstract: A wavelength conversion apparatus includes a wavelength conversion member that has an incident surface and an emitting surface and generates a wavelength-converted light by converting the wavelength of incident light that is incident on the incident surface and emits the wavelength-converted light from the emitting surface; and an antenna array including a plurality of antennas that are formed on the wavelength conversion member and arranged at a pitch P, which is equal to the approximate optical wavelength of the wavelength-converted light in the wavelength conversion member.

Abstract: A wavelength conversion device includes: a wavelength conversion element having a phosphor plate that converts the wavelength of incident light upon a light incident surface to generate wavelength-converted light, and emits the wavelength-converted light from a light emission surface; an antenna array constituted of a plurality of optical antennas that are periodically arranged on the light emission surface of the phosphor plate; and a recessed structure including at least one recessed portion provided in the light emission surface of the phosphor plate.

Abstract: A lighting apparatus includes a laser source configured to emit a laser beam, a homogenizer optical element that includes a light flux dividing section disposed to face the laser source, configured to divide the laser beam into a plurality of separate laser beams in a plane and make advancing directions of the plurality of separate laser beams different from each other, and a light flux superimposing section formed integrally with the light flux dividing section and superimposing the plurality of separate laser beams on each other in a common radiation region, and a fluorescent material disposed to face the homogenizer optical element, excited by the plurality of separate laser beams superimposed in the radiation region using the light flux superimposing section so as to emit fluorescence.

Abstract: A method for manufacturing a semiconductor light-emitting device includes: forming a plurality of guide grooves so as to be depressed from a surface of a semiconductor structure layer toward a semiconductor substrate and to align and extend along a direction perpendicular to an extending direction of a plurality of line electrodes; forming, in each of the plurality of guide grooves, a scribe groove so as to be depressed from a bottom surface of the guide groove toward the semiconductor substrate and to extend along an extending direction of the guide groove; and dividing a semiconductor wafer along the plurality of guide grooves. The guide groove and the scribe groove are formed to have end shapes in such a manner that inner walls thereof project toward each other in the extending direction of the scribe groove.

Abstract: A semiconductor light-emitting element has a distributed Bragg reflector that is grown by depositing an InAlN layer and a GaN layer a plurality of times in that order on a semipolar plane of a semiconductor substrate, and a semiconductor structure layer that is formed on the distributed Bragg reflector and includes an active layer. The InAlN layer has a plurality of projections on an interface with the GaN layer, and the InAlN layer has a low In region which is formed at the top of each of the plurality of projections and which is lower in In composition than the remaining region.

Abstract: A wavelength conversion apparatus includes a wavelength conversion member that has an incident surface and an emitting surface and generates a wavelength-converted light by converting the wavelength of incident light that is incident on the incident surface and emits the wavelength-converted light from the emitting surface; and an antenna array including a plurality of antennas that are formed on the wavelength conversion member and arranged at a pitch P, which is equal to the approximate optical wavelength of the wavelength-converted light in the wavelength conversion member.

Abstract: A semiconductor light-emitting element has a distributed Bragg reflector that is grown by depositing an InAlN layer and a GaN layer a plurality of times in that order on a semipolar plane of a semiconductor substrate, and a semiconductor structure layer that is formed on the distributed Bragg reflector and includes an active layer. The InAlN layer has a plurality of projections on an interface with the GaN layer, and the InAlN layer has a low In region which is formed at the top of each of the plurality of projections and which is lower in In composition than the remaining region.

Abstract: A method for manufacturing a semiconductor light-emitting device includes: forming a plurality of guide grooves so as to be depressed from a surface of a semiconductor structure layer toward a semiconductor substrate and to align and extend along a direction perpendicular to an extending direction of a plurality of line electrodes; forming, in each of the plurality of guide grooves, a scribe groove so as to be depressed from a bottom surface of the guide groove toward the semiconductor substrate and to extend along an extending direction of the guide groove; and dividing a semiconductor wafer along the plurality of guide grooves. The guide groove and the scribe groove are formed to have end shapes in such a manner that inner walls thereof project toward each other in the extending direction of the scribe groove.

Abstract: A light emitting element includes a semiconductor structure layer, a reflective electrode layer formed on a part of the semiconductor structure layer, a conductor layer formed on the semiconductor structure layer with the reflective electrode layer embedded therein, and a support substrate that is arranged on the conductor layer and joined to the conductor layer via a junction layer. A high resistance contact surface is provided at an interface between the semiconductor structure layer and the conductor layer. A high resistance portion is arranged in an area opposed via the conductor layer to an area where the high resistance contact surface is provided. The conductor layer is connected to the junction layer in a peripheral area of the conductor layer outside the high resistance portion.

Abstract: A semiconductor light emitting device which produces mixed light of a desired emission color by a combination of a semiconductor light emitting element and a wavelength converting layer containing a fluorescent substance, and a vehicle lamp including the semiconductor light emitting device. The wavelength converting layer has different wavelength conversion characteristics respectively at its portion covering an area of relatively high current density at light emission operation of the semiconductor light emitting element and at its portion covering an area of relatively low current density so as to reduce chromaticity difference over the light extraction surface of the mixed light due to non-uniformity of current density in the light emitting layer at light emission operation.

Abstract: A semiconductor light emitting apparatus includes semiconductor lamination of n-type layer, active layer, and p-type layer; recess penetrating the lamination from the p-type layer and exposing the n-type layer; n-side electrode formed on the n-type layer at the bottom of the recess and extending upward above the p-type layer; a p-side electrode formed on the p-type layer and having an opening surrounding the recess in plan view, the n-side electrode extending from inside to above the recess; and an insulating layer disposed between the p-side and the n-side electrodes on the p-type layer, the p-side electrode constituting a reflective electrode reflecting light incident from the active layer, the n-side electrode including a reflective electrode layer covering the opening in plan view and reflects light incident from the emission layer side, the reflective electrode layer having peripheral portion overlapping peripheral portion of the p-side electrode in plan view.

Abstract: A semiconductor light emitting element comprises an optical semiconductor laminated layer providing vias, an electrode that is disposed on a surface of the optical semiconductor laminated layer and separated from the second semiconductor layer in a peripheral portion of the electrode, a first transparent insulating layer that is disposed between the peripheral portion of the electrode and the optical semiconductor laminated layer, and a second transparent insulating layer that is disposed to cover the electrode, that envelops the peripheral portion of the electrode together with the first transparent insulating layer.

Abstract: A semiconductor light emitting apparatus includes semiconductor lamination of n-type layer, active layer, and p-type layer; recess penetrating the lamination from the p-type layer and exposing the n-type layer; n-side electrode formed on the n-type layer at the bottom of the recess and extending upward above the p-type layer; a p-side electrode formed on the p-type layer and having an opening surrounding the recess in plan view, the n-side electrode extending from inside to above the recess; and an insulating layer disposed between the p-side and the n-side electrodes on the p-type layer, the p-side electrode constituting a reflective electrode reflecting light incident from the active layer, the n-side electrode including a reflective electrode layer covering the opening in plan view and reflects light incident from the emission layer side, the reflective electrode layer having peripheral portion overlapping peripheral portion of the p-side electrode in plan view.