Patents by Inventor Yusuke Yokobayashi

Yusuke Yokobayashi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10732328
    Abstract: A wavelength conversion apparatus includes a wavelength conversion member that has an incident surface and an emitting surface and generates a wavelength-converted light by converting the wavelength of incident light that is incident on the incident surface and emits the wavelength-converted light from the emitting surface; and an antenna array including a plurality of antennas that are formed on the wavelength conversion member and arranged at a pitch P, which is equal to the approximate optical wavelength of the wavelength-converted light in the wavelength conversion member.
    Type: Grant
    Filed: July 21, 2017
    Date of Patent: August 4, 2020
    Assignees: STANLEY ELECTRIC CO., LTD., KYOTO UNIVERSITY
    Inventors: Shunsuke Murai, Yusuke Yokobayashi
  • Publication number: 20200025341
    Abstract: A wavelength conversion device includes: a wavelength conversion element having a phosphor plate that converts the wavelength of incident light upon a light incident surface to generate wavelength-converted light, and emits the wavelength-converted light from a light emission surface; an antenna array constituted of a plurality of optical antennas that are periodically arranged on the light emission surface of the phosphor plate; and a recessed structure including at least one recessed portion provided in the light emission surface of the phosphor plate.
    Type: Application
    Filed: July 12, 2019
    Publication date: January 23, 2020
    Applicants: KYOTO UNIVERSITY, STANLEY ELECTRIC CO., LTD.
    Inventors: Shunsuke MURAI, Yusuke YOKOBAYASHI, Yasuyuki KAWAKAMI, Keijiro TAKASHIMA, Syousaku KUBO, Yosuke MAEMURA
  • Publication number: 20190250490
    Abstract: A lighting apparatus includes a laser source configured to emit a laser beam, a homogenizer optical element that includes a light flux dividing section disposed to face the laser source, configured to divide the laser beam into a plurality of separate laser beams in a plane and make advancing directions of the plurality of separate laser beams different from each other, and a light flux superimposing section formed integrally with the light flux dividing section and superimposing the plurality of separate laser beams on each other in a common radiation region, and a fluorescent material disposed to face the homogenizer optical element, excited by the plurality of separate laser beams superimposed in the radiation region using the light flux superimposing section so as to emit fluorescence.
    Type: Application
    Filed: February 5, 2019
    Publication date: August 15, 2019
    Applicant: STANLEY ELECTRIC CO., LTD.
    Inventors: Yusuke YOKOBAYASHI, Masaru KURAMOTO
  • Patent number: 10164409
    Abstract: A method for manufacturing a semiconductor light-emitting device includes: forming a plurality of guide grooves so as to be depressed from a surface of a semiconductor structure layer toward a semiconductor substrate and to align and extend along a direction perpendicular to an extending direction of a plurality of line electrodes; forming, in each of the plurality of guide grooves, a scribe groove so as to be depressed from a bottom surface of the guide groove toward the semiconductor substrate and to extend along an extending direction of the guide groove; and dividing a semiconductor wafer along the plurality of guide grooves. The guide groove and the scribe groove are formed to have end shapes in such a manner that inner walls thereof project toward each other in the extending direction of the scribe groove.
    Type: Grant
    Filed: February 22, 2017
    Date of Patent: December 25, 2018
    Assignee: STANLEY ELECTRIC CO., LTD.
    Inventors: Philip Rackow, Yusuke Yokobayashi, Keijiro Takashima
  • Patent number: 9935428
    Abstract: A semiconductor light-emitting element has a distributed Bragg reflector that is grown by depositing an InAlN layer and a GaN layer a plurality of times in that order on a semipolar plane of a semiconductor substrate, and a semiconductor structure layer that is formed on the distributed Bragg reflector and includes an active layer. The InAlN layer has a plurality of projections on an interface with the GaN layer, and the InAlN layer has a low In region which is formed at the top of each of the plurality of projections and which is lower in In composition than the remaining region.
    Type: Grant
    Filed: March 8, 2017
    Date of Patent: April 3, 2018
    Assignee: Stanley Electric Co., Ltd.
    Inventors: Shinichi Tanaka, Kazuki Kiyohara, Yusuke Yokobayashi
  • Publication number: 20180024279
    Abstract: A wavelength conversion apparatus includes a wavelength conversion member that has an incident surface and an emitting surface and generates a wavelength-converted light by converting the wavelength of incident light that is incident on the incident surface and emits the wavelength-converted light from the emitting surface; and an antenna array including a plurality of antennas that are formed on the wavelength conversion member and arranged at a pitch P, which is equal to the approximate optical wavelength of the wavelength-converted light in the wavelength conversion member.
    Type: Application
    Filed: July 21, 2017
    Publication date: January 25, 2018
    Applicants: KYOTO UNIVERSITY, STANLEY ELECTRIC CO., LTD.
    Inventors: Shunsuke MURAI, Yusuke YOKOBAYASHI
  • Publication number: 20170271847
    Abstract: A semiconductor light-emitting element has a distributed Bragg reflector that is grown by depositing an InAlN layer and a GaN layer a plurality of times in that order on a semipolar plane of a semiconductor substrate, and a semiconductor structure layer that is formed on the distributed Bragg reflector and includes an active layer. The InAlN layer has a plurality of projections on an interface with the GaN layer, and the InAlN layer has a low In region which is formed at the top of each of the plurality of projections and which is lower in In composition than the remaining region.
    Type: Application
    Filed: March 8, 2017
    Publication date: September 21, 2017
    Applicant: STANLEY ELECTRIC CO., LTD.
    Inventors: Shinichi TANAKA, Kazuki KIYOHARA, Yusuke YOKOBAYASHI
  • Publication number: 20170244220
    Abstract: A method for manufacturing a semiconductor light-emitting device includes: forming a plurality of guide grooves so as to be depressed from a surface of a semiconductor structure layer toward a semiconductor substrate and to align and extend along a direction perpendicular to an extending direction of a plurality of line electrodes; forming, in each of the plurality of guide grooves, a scribe groove so as to be depressed from a bottom surface of the guide groove toward the semiconductor substrate and to extend along an extending direction of the guide groove; and dividing a semiconductor wafer along the plurality of guide grooves. The guide groove and the scribe groove are formed to have end shapes in such a manner that inner walls thereof project toward each other in the extending direction of the scribe groove.
    Type: Application
    Filed: February 22, 2017
    Publication date: August 24, 2017
    Applicant: STANLEY ELECTRIC CO., LTD.
    Inventors: Philip RACKOW, Yusuke YOKOBAYASHI, Keijiro TAKASHIMA
  • Patent number: 9368689
    Abstract: A light emitting element includes a semiconductor structure layer, a reflective electrode layer formed on a part of the semiconductor structure layer, a conductor layer formed on the semiconductor structure layer with the reflective electrode layer embedded therein, and a support substrate that is arranged on the conductor layer and joined to the conductor layer via a junction layer. A high resistance contact surface is provided at an interface between the semiconductor structure layer and the conductor layer. A high resistance portion is arranged in an area opposed via the conductor layer to an area where the high resistance contact surface is provided. The conductor layer is connected to the junction layer in a peripheral area of the conductor layer outside the high resistance portion.
    Type: Grant
    Filed: October 24, 2013
    Date of Patent: June 14, 2016
    Assignee: STANLEY ELECTRIC CO., LTD.
    Inventors: Yusuke Yokobayashi, Tatsuma Saito
  • Patent number: 9246067
    Abstract: A semiconductor light emitting device which produces mixed light of a desired emission color by a combination of a semiconductor light emitting element and a wavelength converting layer containing a fluorescent substance, and a vehicle lamp including the semiconductor light emitting device. The wavelength converting layer has different wavelength conversion characteristics respectively at its portion covering an area of relatively high current density at light emission operation of the semiconductor light emitting element and at its portion covering an area of relatively low current density so as to reduce chromaticity difference over the light extraction surface of the mixed light due to non-uniformity of current density in the light emitting layer at light emission operation.
    Type: Grant
    Filed: October 17, 2012
    Date of Patent: January 26, 2016
    Assignee: STANLEY ELECTRIC CO., LTD.
    Inventor: Yusuke Yokobayashi
  • Patent number: 9231163
    Abstract: A semiconductor light emitting apparatus includes semiconductor lamination of n-type layer, active layer, and p-type layer; recess penetrating the lamination from the p-type layer and exposing the n-type layer; n-side electrode formed on the n-type layer at the bottom of the recess and extending upward above the p-type layer; a p-side electrode formed on the p-type layer and having an opening surrounding the recess in plan view, the n-side electrode extending from inside to above the recess; and an insulating layer disposed between the p-side and the n-side electrodes on the p-type layer, the p-side electrode constituting a reflective electrode reflecting light incident from the active layer, the n-side electrode including a reflective electrode layer covering the opening in plan view and reflects light incident from the emission layer side, the reflective electrode layer having peripheral portion overlapping peripheral portion of the p-side electrode in plan view.
    Type: Grant
    Filed: April 21, 2014
    Date of Patent: January 5, 2016
    Assignee: STANLEY ELECTRIC CO., LTD.
    Inventors: Mamoru Miyachi, Tatsuma Saito, Takako Hayashi, Yusuke Yokobayashi, Takanobu Akagi, Ryosuke Kawai
  • Patent number: 8941119
    Abstract: A semiconductor light emitting element comprises an optical semiconductor laminated layer providing vias, an electrode that is disposed on a surface of the optical semiconductor laminated layer and separated from the second semiconductor layer in a peripheral portion of the electrode, a first transparent insulating layer that is disposed between the peripheral portion of the electrode and the optical semiconductor laminated layer, and a second transparent insulating layer that is disposed to cover the electrode, that envelops the peripheral portion of the electrode together with the first transparent insulating layer.
    Type: Grant
    Filed: April 21, 2014
    Date of Patent: January 27, 2015
    Assignee: Stanley Electric Co., Ltd.
    Inventors: Mamoru Miyachi, Tatsuma Saito, Takako Hayashi, Yasuyuki Shibata, Yusuke Yokobayashi, Takanobu Akagi, Ryosuke Kawai
  • Publication number: 20140319455
    Abstract: A semiconductor light emitting apparatus includes semiconductor lamination of n-type layer, active layer, and p-type layer; recess penetrating the lamination from the p-type layer and exposing the n-type layer; n-side electrode formed on the n-type layer at the bottom of the recess and extending upward above the p-type layer; a p-side electrode formed on the p-type layer and having an opening surrounding the recess in plan view, the n-side electrode extending from inside to above the recess; and an insulating layer disposed between the p-side and the n-side electrodes on the p-type layer, the p-side electrode constituting a reflective electrode reflecting light incident from the active layer, the n-side electrode including a reflective electrode layer covering the opening in plan view and reflects light incident from the emission layer side, the reflective electrode layer having peripheral portion overlapping peripheral portion of the p-side electrode in plan view.
    Type: Application
    Filed: April 21, 2014
    Publication date: October 30, 2014
    Applicant: STANLEY ELECTRIC CO., LTD.
    Inventors: Mamoru MIYACHI, Tatsuma SAITO, Takako HAYASHI, Yusuke YOKOBAYASHI, Takanobu AKAGI, Ryosuke KAWAI
  • Publication number: 20140319534
    Abstract: A semiconductor light emitting element comprises an optical semiconductor laminated layer providing vias, an electrode that is disposed on a surface of the optical semiconductor laminated layer and separated from the second semiconductor layer in a peripheral portion of the electrode, a first transparent insulating layer that is disposed between the peripheral portion of the electrode and the optical semiconductor laminated layer, and a second transparent insulating layer that is disposed to cover the electrode, that envelops the peripheral portion of the electrode together with the first transparent insulating layer.
    Type: Application
    Filed: April 21, 2014
    Publication date: October 30, 2014
    Applicant: STANLEY ELECTRIC CO., LTD.
    Inventors: Mamoru MIYACHI, Tatsuma SAITO, Takako HAYASHI, Yasuyuki SHIBATA, Yusuke YOKOBAYASHI, Takanobu AKAGI, Ryosuke KAWAI
  • Patent number: 8860067
    Abstract: A semiconductor light emitting device having an n-electrode and a p-electrode provided on the same surface side of a semiconductor film, wherein current spread in the semiconductor film is promoted, so that the improvements in luminous efficiency and reliability, the emission intensity uniformalization across the surface, and a reduction in the forward voltage, can be achieved. The semiconductor light emitting device includes a semiconductor film including an n-type semiconductor layer, an active layer, and a p-type semiconductor layer; the n-electrode formed on an exposed surface of the n-type semiconductor layer exposed by removing parts of the p-type semiconductor layer, of the active layer, and of the n-type semiconductor layer with accessing from the surface side of the p-type semiconductor layer; and the p-electrode. A current guide portion having conductivity higher than that of the n-type semiconductor layer is provided on or in the n-type semiconductor layer over the p-type electrode.
    Type: Grant
    Filed: December 5, 2011
    Date of Patent: October 14, 2014
    Assignee: Stanley Electric Co., Ltd.
    Inventors: Yusuke Yokobayashi, Satoshi Tanaka, Tatsuma Saito
  • Publication number: 20140110738
    Abstract: A light emitting element includes a semiconductor structure layer, a reflective electrode layer formed on a part of the semiconductor structure layer, a conductor layer formed on the semiconductor structure layer with the reflective electrode layer embedded therein, and a support substrate that is arranged on the conductor layer and joined to the conductor layer via a junction layer. A high resistance contact surface is provided at an interface between the semiconductor structure layer and the conductor layer. A high resistance portion is arranged in an area opposed via the conductor layer to an area where the high resistance contact surface is provided. The conductor layer is connected to the junction layer in a peripheral area of the conductor layer outside the high resistance portion.
    Type: Application
    Filed: October 24, 2013
    Publication date: April 24, 2014
    Inventors: Yusuke YOKOBAYASHI, Tatsuma SAITO
  • Patent number: 8686636
    Abstract: A lamp assembly is provided, that utilizes a light source including an LED element without cutting part of light therefrom and capable of forming a luminance distribution where the light with a maximum peak portion can be arranged substantially at (i.e., at or near) the cutoff line, thereby improving light utilization efficiency. The lamp assembly with an illumination direction can include a light source including an LED element with an emission surface, and a projection optical system for projecting an image of the light source in the illumination direction so that a desired light distribution pattern can be formed on a virtual vertical screen. The light source can have a rectangular shape having long sides and short sides, and can be configured to provide a luminance distribution on the emission surface such that a luminance peak portion is provided at or near one of the long sides.
    Type: Grant
    Filed: August 24, 2011
    Date of Patent: April 1, 2014
    Assignee: Stanley Electric Co., Ltd.
    Inventors: Tatsuma Saito, Yusuke Yokobayashi, Shigeru Murata
  • Patent number: 8597969
    Abstract: In an optical semiconductor device including a semiconductor laminated body including at least a light emitting layer, a first metal body including at least one first metal layer formed on the semiconductor laminated body, a support substrate, a second metal body including at least one second metal layer formed on the support substrate, and at least one adhesive layer formed in a surface side of at least one of the first and second metal bodies, the semiconductor laminated body is coupled to the support substrate by applying a pressure-welding bonding process upon the adhesive layer to form a eutectic alloy layer between the first and second metal bodies. At least one of the first and second metal layers has a triple structure formed by two tight portions and a coarse portion sandwiched by the tight portions.
    Type: Grant
    Filed: August 12, 2010
    Date of Patent: December 3, 2013
    Assignee: Stanley Electric Co., Ltd.
    Inventors: Noriko Nihei, Shinichi Tanaka, Yusuke Yokobayashi
  • Patent number: 8460957
    Abstract: A method for manufacturing a high quality optical semiconductor device includes: (a) preparing a growth substrate; (b) forming a semiconductor layer on the growth substrate; (c) forming a metal support made of copper on the semiconductor layer by plating; (d) separating the growth substrate from the semiconductor layer to remove the growth substrate; and (e) carrying out a thermal treatment in order to even density distributions of crystal grains and voids in the copper forming the metal support.
    Type: Grant
    Filed: October 25, 2010
    Date of Patent: June 11, 2013
    Assignee: Stanley Electric Co., Ltd.
    Inventors: Tatsuma Saito, Yusuke Yokobayashi
  • Patent number: 8455912
    Abstract: A light-emitting device which includes a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type; and a light emitting layer provided between the first and second semiconductor layers, the device comprises a first electrode formed on the first semiconductor layer; a second electrode formed on the second semiconductor layer; and a light-transmissive electrode covering the second semiconductor layer and the second electrode, wherein contact between the second electrode and the second semiconductor layer is non-ohmic, and the second electrode has a stacked structure including a lower layer and an upper layer whose contact resistance with the light-transmissive electrode is lower than that of the lower layer, part of the second electrode being exposed through an opening formed in the light-transmissive electrode.
    Type: Grant
    Filed: September 9, 2010
    Date of Patent: June 4, 2013
    Assignee: Stanley Electric Co., Ltd.
    Inventors: Satoshi Tanaka, Yusuke Yokobayashi