Abstract: A measuring device includes a first space for pressurizing a pressurization target and a second space independent of the first space. The measuring device includes a first exhaust valve closing or opening a communication port communicating the first space with another space. An open/closed state of the first exhaust valve changes in accordance with a pressure difference between the first space and the second space.

Abstract: A method of producing metal component-attached vehicle window glass includes disposing a metal component on a main surface of window glass via an adhesive, locally heating the metal component, and transferring heat from the metal component to the adhesive to heat and cure the adhesive.

Abstract: In a vehicle control device for an autonomous driving vehicle that autonomously travels based on an operation command, a gesture image of a person around the autonomous driving vehicle is acquired, and a stored reference gesture image is collated with the acquired gesture image. At this time, when it is discriminated that the gesture of the person around the autonomous driving vehicle is a gesture requesting the autonomous driving vehicle to stop, it is determined whether a disaster has occurred. When it is determined that the disaster has occurred, the autonomous driving vehicle is caused to stop around the person requesting the autonomous driving vehicle to stop.

Abstract: A semiconductor device of an embodiment includes a substrate, a first electrode, a second electrode, the first electrode provided between the substrate and the second electrode, the oxide semiconductor layer in contact with the first electrode, an oxide semiconductor layer between the first electrode and the second electrode, the oxide semiconductor layer contains Zn and at least one first element selected from In, Ga, Si, Al, and Sn; a conductive layer between the oxide semiconductor layer and the second electrode, the conductive layer in contact with the second electrode, the conductive layer contains O and at least one second element selected from the group consisting of In, Ga, Si, Al, Sn, Zn, and Ti, a gate electrode; and a gate insulating layer between the oxide semiconductor layer and the gate electrode.

Abstract: A pump system contains a pair of pumps each of which contains a vibration actuator vibrated by electromagnetic drive and can discharge fluid due to drive of the vibration actuator. The pump system has a vibration suppression mode in which the pair of the pumps are driven so that vibration of the vibration actuators of the pair of pumps is cancelled each other and a vibration generation mode in which the pair of the pumps are driven so that the vibration of the vibration actuators of the pair of pumps is superimposed with each other.

Abstract: In the wavelength variable light source and its control method of the present disclosure, intensity of oscillation light in a plurality of non-operating ports of MMI is utilized in consideration of filter characteristics between an operating port and a non-operating port that does not directly contribute to oscillation operation. By controlling the RTF laser so that the light intensity of the wavelength of the oscillation light in the monitored non-operation port is in a desired relationship, a wavelength variable light source reflecting SMSR characteristics is realized. The SMSR can be effectively controlled only by adding a photodetector to a non-operation port which has not been considered by the RTF laser of the prior art. In the wavelength variable light source, the inspection of the SMSR and the SMSR monitor during actual operation can be realized by a simple mechanism.

Abstract: An photonic integrated circuit for which a mounting process in free space optics is not performed, formation and airtight sealing of an optical device are precisely performed, and cost reduction can be effectively achieved has a configuration including a lid portion connected to an upper surface of a semiconductor substrate to cover an optical waveguide and a mirror provided on the upper surface of the semiconductor substrate and a lens in the lid portion for concentrating light reflected by the mirror and emitting the light outward. A bonding material on an upper surface of a dielectric film formed above the upper surface of the semiconductor substrate and a bonding material formed in a peripheral edge portion of the lid portion are disposed so as to overlap witheach other to be bonded.

Abstract: An oscillation wavelength adjustment type TLD for adjusting a control amount of a resonator length L, independently from physical property values of a waveguide material when a waveguide is used in the phase adjustment, without an external resonator structure in accordance with a MEMS technology employs a reflective phase adjuster (20) including a multi-mode interference waveguide (21), which is optically coupled to an optical gain waveguide and has a configuration including one input port and five output ports, and a reflective delay line array (25) connected to an output waveguide on a side of the five output ports of the multi-mode interference waveguide (21). Five reflective delay lines (24-0 to 24-4) provided in the reflective delay line array (25) are capable of adjusting the intensity of reciprocating light in accordance with a wavelength change of transmitted light. The intensity of the reciprocating light can also be adjusted by an electric signal applied from the outside.

Abstract: An optical waveguide is an optical waveguide including a semiconductor quantum well structure, the optical waveguide including a first region in which the semiconductor quantum well structure is not disordered and a second region in which the semiconductor quantum well structure is disordered. The first region has a first bandgap wavelength, the second region has a second bandgap wavelength, and a region in which the semiconductor quantum well structure is disordered in such a manner that a bandgap wavelength continuously decreases from the first bandgap wavelength to the second bandgap wavelength is provided between the first region and the second region.

Abstract: An optical semiconductor chip of the present disclosure includes a high frequency line between an electrode pad receiving a modulation signal and a modulation electrode on the optical waveguide having a light absorption layer. The depletion layer capacitance generated in the light absorption layer is canceled by an inductor component of the high frequency line. When a portion directly below the high frequency line is embedded with a low-dielectric-constant material or is made hollow, the parasitic capacitance is further reduced. The high frequency line may have a zigzag shape as well as a linear shape. The electrode pad on the optical semiconductor chip can be connected to other substrates including RF lines for modulation signal input by bumps or wire bonding.

Abstract: After a step of etching a core layer, a lower cladding layer, and a substrate so that a recessed opening including one end of an optical waveguide is formed relative to a multilayer board and a step of forming mask layers on a top surface of the substrate including the opening, in a step, crystal is grown with respect to the mask layers in the opening, and a tilt surface to be used as the monolithic mirror is formed. An upper cladding layer is formed covering the core layer at the same time. Then, formation of an optical waveguide pattern, formation of the optical waveguide and an end surface of the optical waveguide, formation of a dielectric film for preventing reflection, and formation of a metal film on a surface of the tilt surface are executed.

Abstract: An optical circuit is provided in which electric circuit parts and optical circuit parts are integrated in a stack on a printed substrate. The optical circuit is provided with a lid having a temperature regulation function that uses a temperature control element and an optical fiber block capable of optical input and output. Temperature control of optical circuit elements can be efficiently performed by mounting electric circuit parts and optical circuit parts on a printed substrate in advance by a reflow step using OBO technology and subsequently attaching a lid that includes a temperature control element.

Abstract: A semiconductor device includes an electrode which is arranged on an organic material with an insulation film interposed therebetween and which does not easily peel away from the organic material along with the insulation film. An insulation film in a region including pad portions of a phase shift electrode and a modulation electrode has openings at the centers of the pad portions of the phase shift electrode and the modulation electrode, the edge portions of which are formed on the phase shift electrode and the modulation electrode. In this way, the adjoining edges of the phase shift electrode and modulation electrode and the insulation film are all covered by the insulation film so as not to be exposed to the atmosphere.

Abstract: A tunable laser that is characterized by including a gain waveguide ACT made of an optically active semiconductor material, and a tunable wavelength filter TWF that selects light of a specific wavelength using current injection, which are integrated on a compound semiconductor substrate S, in which at least one or more of the tunable wavelength filters TWF are formed to select a specific wavelength of light from the light from the waveguide ACT and return the selected specific wavelength of light back to the waveguide ACT, and a semiconductor mixed crystal material constituting the tunable wavelength filter TWF has a strained multiple quantum well structure MQW in which a mixed crystal material ratio changes periodically.

Abstract: An optical module includes: a substrate; one or more light sources that produce light that is an optical signal; one or more light reflection units that change the direction of travel of the light to a direction substantially perpendicular to the substrate; one or more optical waveguides that optically connect the one or more light sources and the one or more light reflection units to each other; and a lid that is attached to the substrate to cover the one or more light sources, the one or more light reflection units and the one or more optical waveguides. The lid has one or more lenses that collimate light directed by the one or more light reflection units and transmit the light to the outside of the lid.

Abstract: There is provided an optical element mounted on a substrate and an optical coupling element mounted on the substrate. The optical coupling element includes a guide unit extending in a direction parallel to a plane of the substrate so as to fix an optical fiber. There is provided a mold resin layer formed on the substrate so as to cover the optical element and expose a side surface of the optical coupling element at one end of the guide unit. The optical element includes a light incidence/emission unit on a side surface perpendicular to the plane of the substrate, and the other end of the guide unit and the light incidence/emission unit are disposed to face each other.

Abstract: To provide an optical module, an optical wiring board, and a method for manufacturing an optical module that provide the two-dimensional freedom degree of the joint portion between the optical module and the optical fiber even through the OBO method is applied to an optical module mounted via WLP.

Abstract: An optical integrated circuit of the present disclosure is a monolithic optical integrated circuit formed on a substrate and includes a semiconductor laser, a 1×N optical demultiplexer, array waveguides including N waveguides, each of the N waveguides having a semiconductor optical amplifier (SOA) configured to amplify a corresponding split light beam from the semiconductor laser, and an N×1 optical multiplexer. A phase of light beams output from the SOA at input ports of the N×1 optical multiplexer is set so that the output light beams are multiplexed at an output port of the N×1 optical multiplexer in the same phase. A phase can be set by setting a length of the N waveguides and providing a phase adjuster.

Abstract: To provide a surface emitting type optical device capable of appropriate on-wafer measurement without affecting element characteristics, low-cost manufacturing, and high-density packaging. This surface emitting type light source includes, in an optical waveguide having a semiconductor laser region formed on a top surface being one main surface of a semiconductor substrate and a spot size converter region leading thereto, a reflective mirror that reflects light emitted from the laser into free space via the converter to the top surface side of the substrate. A p-type drive electrode in the laser region and an insulating layer in the converter region are provided on the top surface of the substrate, and an n-type drive electrode in the laser region is provided on a bottom surface of the other main surface of the substrate. In the laser, current injection into an active layer using various electrodes generates an optical gain in the active layer.

Abstract: Provided is an optical modulator having an optical modulation high frequency line through which a high frequency electrical signal can be efficiently input to an optical modulation region and which is in a broadband. High frequency lines of an optical modulator, that is, an input high frequency line, an optical modulation high frequency line, and an output high frequency line have a line configuration in which each of the input high frequency line and the output high frequency line is divided into a plurality of segments, and adjacent segments of the plurality of the segments have different characteristic impedances and propagation constants. The input high frequency line and the output high frequency line may be implemented by changing a width or a thickness of a signal electrode formed on a dielectric forming a micro-strip line between adjacent segments.