Patents by Inventor Yutaka Higo
Yutaka Higo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240005975Abstract: A storage element includes a layer structure including a storage layer having a direction of magnetization which changes according to information, a magnetization fixed layer having a fixed direction of magnetization, and an intermediate layer disposed therebetween, which intermediate layer contains a nonmagnetic material. The magnetization fixed layer has at least two ferromagnetic layers having a direction of magnetization tilted from a direction perpendicular to a film surface, which are laminated and magnetically coupled interposing a coupling layer therebetween. This configuration may effectively prevent divergence of magnetization reversal time due to directions of magnetization of the storage layer and the magnetization fixed layer being substantially parallel or antiparallel, reduce write errors, and enable writing operation in a short time.Type: ApplicationFiled: August 29, 2023Publication date: January 4, 2024Inventors: Yutaka Higo, Masanori Hosomi, Hiroyuki Ohmori, Kazuhiro Bessho, Tetsuya Asayama, Kazutaka Yamane, Hiroyuki Uchida
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Patent number: 11839163Abstract: A storage element including a storage layer configured to hold information by use of a magnetization state of a magnetic material, with a pinned magnetization layer being provided on one side of the storage layer, with a tunnel insulation layer, and with the direction of magnetization of the storage layer being changed through injection of spin polarized electrons by passing a current in the lamination direction, so as to record information in the storage layer, wherein a spin barrier layer configured to restrain diffusion of the spin polarized electrons is provided on the side, opposite to the pinned magnetization layer, of the storage layer; and the spin barrier layer includes at least one material selected from the group composing of oxides, nitrides, and fluorides.Type: GrantFiled: April 11, 2022Date of Patent: December 5, 2023Assignee: SONY CORPORATIONInventors: Yutaka Higo, Masanori Hosomi, Kazuhiro Bessho, Tetsuya Yamamoto, Hiroyuki Ohmori, Kazutaka Yamane, Yuki Oishi, Hiroshi Kano
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Patent number: 11776605Abstract: A storage element includes a layer structure including a storage layer having a direction of magnetization which changes according to information, a magnetization fixed layer having a fixed direction of magnetization, and an intermediate layer disposed therebetween, which intermediate layer contains a nonmagnetic material. The magnetization fixed layer has at least two ferromagnetic layers having a direction of magnetization tilted from a direction perpendicular to a film surface, which are laminated and magnetically coupled interposing a coupling layer therebetween. This configuration may effectively prevent divergence of magnetization reversal time due to directions of magnetization of the storage layer and the magnetization fixed layer being substantially parallel or antiparallel, reduce write errors, and enable writing operation in a short time.Type: GrantFiled: April 29, 2022Date of Patent: October 3, 2023Assignee: Sony Group CorporationInventors: Yutaka Higo, Masanori Hosomi, Hiroyuki Ohmori, Kazuhiro Bessho, Tetsuya Asayama, Kazutaka Yamane, Hiroyuki Uchida
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Patent number: 11551737Abstract: A magnetic storage element and an electronic apparatus having a reduced writing current while retaining a magnetism retention property of a storage layer. The magnetic storage element includes a spin orbit layer extending in one direction, a writing line that is electrically coupled to the spin orbit layer, and allows a current to flow in an extending direction of the spin orbit layer, a tunnel junction element including a storage layer, an insulator layer, and a magnetization fixed layer that are stacked in order on the spin orbit layer, and a non-magnetic layer having a film thickness of 2 nm or less, and disposed at any stack position between the spin orbit layer and the insulator layer.Type: GrantFiled: January 15, 2018Date of Patent: January 10, 2023Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Naoki Hase, Masanori Hosomi, Yutaka Higo, Hiroyuki Ohmori, Hiroyuki Uchida, Yo Sato
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Patent number: 11527261Abstract: A storage element is provided. The storage element includes a memory layer; a fixed magnetization layer; an intermediate layer including a non-magnetic material; wherein the intermediate layer is provided between the memory layer and the fixed magnetization layer; wherein the fixed magnetization layer includes at least a first magnetic layer, a second magnetic layer, and a non-magnetic layer, and wherein the first magnetic layer includes a CoFeB composition. A memory apparatus and a magnetic head are also provided.Type: GrantFiled: February 22, 2021Date of Patent: December 13, 2022Assignee: Sony CorporationInventors: Kazutaka Yamane, Masanori Hosomi, Hiroyuki Ohmori, Kazuhiro Bessho, Yutaka Higo, Tetsuya Asayama, Hiroyuki Uchida
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Patent number: 11502244Abstract: A magnetic element is provided. The magnetic element includes a free magnetization layer having a surface area that is approximately 1,600 nm2 or less, the free magnetization layer including a magnetization state that is configured to be changed; an insulation layer coupled to the free magnetization layer, the insulation layer including a non-magnetic material; and a magnetization fixing layer coupled to the insulation layer opposite the free magnetization layer, the magnetization fixing layer including a fixed magnetization so as to be capable of serving as a reference of the free magnetization layer.Type: GrantFiled: November 30, 2020Date of Patent: November 15, 2022Assignee: Sony CorporationInventors: Kazutaka Yamane, Masanori Hosomi, Hiroyuki Ohmori, Kazuhiro Bessho, Yutaka Higo, Tetsuya Asayama, Hiroyuki Uchida
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Patent number: 11475932Abstract: A storage element includes a layer structure including a storage layer having a direction of magnetization which changes according to information, a magnetization fixed layer having a fixed direction of magnetization, and an intermediate layer disposed therebetween, which intermediate layer contains a nonmagnetic material. The magnetization fixed layer has at least two ferromagnetic layers having a direction of magnetization tilted from a direction perpendicular to a film surface, which are laminated and magnetically coupled interposing a coupling layer therebetween. This configuration may effectively prevent divergence of magnetization reversal time due to directions of magnetization of the storage layer and the magnetization fixed layer being substantially parallel or antiparallel, reduce write errors, and enable writing operation in a short time.Type: GrantFiled: November 5, 2020Date of Patent: October 18, 2022Assignee: Sony Group CorporationInventors: Yutaka Higo, Masanori Hosomi, Hiroyuki Ohmori, Kazuhiro Bessho, Tetsuya Asayama, Kazutaka Yamane, Hiroyuki Uchida
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Publication number: 20220328084Abstract: A storage element includes a layer structure including a storage layer having a direction of magnetization which changes according to information, a magnetization fixed layer having a fixed direction of magnetization, and an intermediate layer disposed therebetween, which intermediate layer contains a nonmagnetic material. The magnetization fixed layer has at least two ferromagnetic layers having a direction of magnetization tilted from a direction perpendicular to a film surface, which are laminated and magnetically coupled interposing a coupling layer therebetween. This configuration may effectively prevent divergence of magnetization reversal time due to directions of magnetization of the storage layer and the magnetization fixed layer being substantially parallel or antiparallel, reduce write errors, and enable writing operation in a short time.Type: ApplicationFiled: April 29, 2022Publication date: October 13, 2022Inventors: Yutaka Higo, Masanori Hosomi, Hiroyuki Ohmori, Kazuhiro Bessho, Tetsuya Asayama, Kazutaka Yamane, Hiroyuki Uchida
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Patent number: 11462681Abstract: Provided is a magnetic storage element including a stack structure which includes a fixed layer whose magnetization direction is fixed, a storage layer whose magnetization direction is reversible, and a non-magnetic layer sandwiched between the fixed layer and the storage layer. The magnetization direction has a direction along a stack direction of the stack structure, and the fixed layer or the storage layer has a region which contains at least one contained element selected from the element group consisting of B, C, N, Al, Mg, and Si at 30 atm % or more and 80 atm % or less.Type: GrantFiled: June 6, 2019Date of Patent: October 4, 2022Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Hiroyuki Uchida, Masanori Hosomi, Kazuhiro Bessho, Yutaka Higo, Yo Sato, Naoki Hase, Hiroyuki Ohmori
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Patent number: 11430497Abstract: There is provided a magnetic storage element including: a storage layer; a reference layer provided at least one surface side of the storage layer with a non-magnetic layer in between; a magnetization fixation layer provided at a surface side opposite to a surface of the reference layer at which the storage layer is provided, with a non-magnetic layer in between; and a magnetization assist layer provided at a surface side opposite to a surface of the magnetization fixation layer at which the reference layer is provided, with a non-magnetic layer in between, in which change in a magnetization direction is easier than in the storage layer.Type: GrantFiled: March 31, 2020Date of Patent: August 30, 2022Assignee: Sony CorporationInventors: Hiroyuki Ohmori, Masanori Hosomi, Kazuhiro Bessho, Yutaka Higo, Hiroyuki Uchida
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Publication number: 20220271219Abstract: A storage element includes a storage layer, a fixed magnetization layer, a spin barrier layer, and a spin absorption layer. The storage layer stores information based on a magnetization state of a magnetic material. The fixed magnetization layer is provided for the storage layer through a tunnel insulating layer. The spin barrier layer suppresses diffusion of spin-polarized electrons and is provided on the side of the storage layer opposite the fixed magnetization layer. The spin absorption layer is formed of a nonmagnetic metal layer causing spin pumping and provided on the side of the spin barrier layer opposite the storage layer. A direction of magnetization in the storage layer is changed by passing current in a layering direction to inject spin-polarized electrons so that information is recorded in the storage layer and the spin barrier layer includes at least a material selected from oxides, nitrides, and fluorides.Type: ApplicationFiled: May 4, 2022Publication date: August 25, 2022Inventors: Yutaka HIGO, Masanori HOSOMI, Hiroyuki OHMORI, Tetsuya YAMAMOTO, Kazutaka YAMANE, Yuki OISHI, Hiroshi KANO
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Publication number: 20220238797Abstract: A storage element including a storage layer configured to hold information by use of a magnetization state of a magnetic material, with a pinned magnetization layer being provided on one side of the storage layer, with a tunnel insulation layer, and with the direction of magnetization of the storage layer being changed through injection of spin polarized electrons by passing a current in the lamination direction, so as to record information in the storage layer, wherein a spin barrier layer configured to restrain diffusion of the spin polarized electrons is provided on the side, opposite to the pinned magnetization layer, of the storage layer; and the spin barrier layer includes at least one material selected from the group composing of oxides, nitrides, and fluorides.Type: ApplicationFiled: April 11, 2022Publication date: July 28, 2022Inventors: Yutaka Higo, Masanori Hosomi, Kazuhiro Bessho, Tetsuya Yamamoto, Hiroyuki Ohmori, Kazutaka Yamane, Yuki Oishi, Hiroshi Kano
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Patent number: 11349067Abstract: A storage element includes a storage layer, a fixed magnetization layer, a spin barrier layer, and a spin absorption layer. The storage layer stores information based on a magnetization state of a magnetic material. The fixed magnetization layer is provided for the storage layer through a tunnel insulating layer. The spin barrier layer suppresses diffusion of spin-polarized electrons and is provided on the side of the storage layer opposite the fixed magnetization layer. The spin absorption layer is formed of a nonmagnetic metal layer causing spin pumping and provided on the side of the spin barrier layer opposite the storage layer. A direction of magnetization in the storage layer is changed by passing current in a layering direction to inject spin-polarized electrons so that information is recorded in the storage layer and the spin barrier layer includes at least a material selected from oxides, nitrides, and fluorides.Type: GrantFiled: November 30, 2020Date of Patent: May 31, 2022Assignee: Sony CorporationInventors: Yutaka Higo, Masanori Hosomi, Hiroyuki Ohmori, Tetsuya Yamamoto, Kazutaka Yamane, Yuki Oishi, Hiroshi Kano
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Patent number: 11322681Abstract: A storage element including a storage layer configured to hold information by use of a magnetization state of a magnetic material, with a pinned magnetization layer being provided on one side of the storage layer, with a tunnel insulation layer, and with the direction of magnetization of the storage layer being changed through injection of spin polarized electrons by passing a current in the lamination direction, so as to record information in the storage layer, wherein a spin barrier layer configured to restrain diffusion of the spin polarized electrons is provided on the side, opposite to the pinned magnetization layer, of the storage layer; and the spin barrier layer includes at least one material selected from the group composing of oxides, nitrides, and fluorides.Type: GrantFiled: January 2, 2020Date of Patent: May 3, 2022Assignee: Sony CorporationInventors: Yutaka Higo, Masanori Hosomi, Kazuhiro Bessho, Tetsuya Yamamoto, Hiroyuki Ohmori, Kazutaka Yamane, Yuki Oishi, Hiroshi Kano
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Patent number: 11276729Abstract: A magnetoresistive element includes: a first laminated structure body having a first surface and a second surface 20B facing the first surface; and a second laminated structure body formed by laminating a storage layer, an intermediate layer, and a magnetization fixed layer, the second laminated structure body having a first surface and a second surface facing the first surface, the first surface being positioned facing the second surface of the first laminated structure body. The first laminated structure body has a laminated structure including, from the first surface side of the first laminated structure body, a first layer made of a metal nitride and a second layer made of ruthenium or a ruthenium compound.Type: GrantFiled: December 1, 2016Date of Patent: March 15, 2022Assignee: Sony CorporationInventors: Hiroyuki Uchida, Masanori Hosomi, Hiroyuki Ohmori, Kazuhiro Bessho, Yutaka Higo
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Patent number: 11257516Abstract: The present technology relates to a storage device that realizes both a high information retention property and a low power consumption. A storage device includes a fixed layer, a storage layer, an intermediate layer, and a heat generation layer. The fixed layer includes a first ferromagnetic layer that includes a fixed perpendicular magnetization. The storage layer includes a second ferromagnetic layer that includes a perpendicular magnetization invertible by a spin injection. The intermediate layer is formed of an insulator and is arranged between the storage layer and the fixed layer. The heat generation layer is formed of a resistance heating element and is arranged in at least one of the storage layer and the fixed layer. With this configuration, it becomes possible to provide a storage device that realizes both a high information retention property and a low power consumption.Type: GrantFiled: February 6, 2020Date of Patent: February 22, 2022Assignee: Sony CorporationInventors: Kazutaka Yamane, Hiroyuki Uchida, Yutaka Higo, Hiroyuki Ohmori, Kazuhiro Bessho, Masanori Hosomi
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Patent number: 11195989Abstract: The present disclosure is to provide a ferromagnetic tunnel junction element and a method of manufacturing the ferromagnetic tunnel junction element capable of avoiding changes in the characteristics of the element and maintaining a high fabrication yield, while avoiding an increase in the area occupied by the element and an increase in the number of manufacturing steps. The ferromagnetic tunnel junction element to be provided includes: a first magnetic layer; a first insulating layer disposed on the first magnetic layer; a second magnetic layer containing a magnetic transition metal, the second magnetic layer being disposed on the first insulating layer; and a magnesium oxide film containing the magnetic transition metal, the magnesium oxide film being disposed to cover the side surfaces of the second magnetic layer.Type: GrantFiled: December 26, 2017Date of Patent: December 7, 2021Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Hiroyuki Ohmori, Masanori Hosomi, Yutaka Higo, Hiroyuki Uchida, Naoki Hase, Yo Sato
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Publication number: 20210288244Abstract: Provided is a magnetic storage element including a stack structure which includes a fixed layer whose magnetization direction is fixed, a storage layer whose magnetization direction is reversible, and a non-magnetic layer sandwiched between the fixed layer and the storage layer. The magnetization direction has a direction along a stack direction of the stack structure, and the fixed layer or the storage layer has a region which contains at least one contained element selected from the element group consisting of B, C, N, Al, Mg, and Si at 30 atm % or more and 80 atm % or less.Type: ApplicationFiled: June 6, 2019Publication date: September 16, 2021Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Hiroyuki UCHIDA, Masanori HOSOMI, Kazuhiro BESSHO, Yutaka HIGO, Yo SATO, Naoki HASE, Hiroyuki OHMORI
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Patent number: 11069389Abstract: To provide a magnetic memory capable of performing stable recording while suppressing occurrence of an inversion error. Provided is a magnetic memory including a spin orbit layer in which a spin-polarized electron is generated by a current, a magnetic memory element having a laminated structure including a magnetic layer in which a magnetization direction changes according to information to be recorded and an insulating layer, and provided on the spin orbit layer, and a voltage application layer for applying a voltage to the magnetic layer via the insulating layer, in which the voltage application layer applies a voltage to the magnetic layer at a same time as the current flowing in the spin orbit layer to change magnetic anisotropy or a magnetic damping constant of the magnetic layer.Type: GrantFiled: January 22, 2018Date of Patent: July 20, 2021Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Hiroyuki Ohmori, Masanori Hosomi, Yutaka Higo, Hiroyuki Uchida, Naoki Hase, Yo Sato
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Patent number: RE49364Abstract: A memory element including a layered structure including a memory layer having magnetization perpendicular to a film face in which a direction of the magnetization is changed depending on information stored therein, a magnetization-fixed layer having magnetization perpendicular to the film face, which becomes a base of the information stored in the memory layer, and an intermediate layer that is formed of a non-magnetic material and is provided between the memory layer and the magnetization-fixed layer.Type: GrantFiled: March 6, 2020Date of Patent: January 10, 2023Assignee: Sony CorporationInventors: Hiroyuki Uchida, Masanori Hosomi, Hiroyuki Ohmori, Kazuhiro Bessho, Yutaka Higo, Tetsuya Asayama, Kazutaka Yamane