Patents by Inventor Yutaka Higo
Yutaka Higo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10128436Abstract: A storage element including a storage layer configured to hold information by use of a magnetization state of a magnetic material, with a pinned magnetization layer being provided on one side of the storage layer, with a tunnel insulation layer, and with the direction of magnetization of the storage layer being changed through injection of spin polarized electrons by passing a current in the lamination direction, so as to record information in the storage layer, wherein a spin barrier layer configured to restrain diffusion of the spin polarized electrons is provided on the side, opposite to the pinned magnetization layer, of the storage layer; and the spin barrier layer includes at least one material selected from the group composing of oxides, nitrides, and fluorides.Type: GrantFiled: March 23, 2018Date of Patent: November 13, 2018Assignee: SONY CORPORATIONInventors: Yutaka Higo, Masanori Hosomi, Kazuhiro Bessho, Tetsuya Yamamoto, Hiroyuki Ohmori, Kazutaka Yamane, Yuki Oishi, Hiroshi Kano
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Patent number: 10128435Abstract: There is disclosed an information storage element including a first layer including a ferromagnetic layer with a magnetization direction perpendicular to a film face; an insulation layer coupled to the first layer; and a second layer coupled to the insulation layer opposite the first layer, the second layer including a fixed magnetization so as to be capable of serving as a reference of the first layer. The first layer is capable of storing information according to a magnetization state of a magnetic material, and the magnetization state is configured to be changed by a spin injection. A magnitude of an effective diamagnetic field which the first layer receives is smaller than a saturated magnetization amount of the first layer.Type: GrantFiled: February 18, 2016Date of Patent: November 13, 2018Assignee: Sony CorporationInventors: Kazutaka Yamane, Masanori Hosomi, Hiroyuki Ohmori, Kazuhiro Bessho, Yutaka Higo, Hiroyuki Uchida, Tetsuya Asayama
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Patent number: 10121963Abstract: A storage element includes a storage layer, a fixed magnetization layer, a spin barrier layer, and a spin absorption layer. The storage layer stores information based on a magnetization state of a magnetic material. The fixed magnetization layer is provided for the storage layer through a tunnel insulating layer. The spin barrier layer suppresses diffusion of spin-polarized electrons and is provided on the side of the storage layer opposite the fixed magnetization layer. The spin absorption layer is formed of a nonmagnetic metal layer causing spin pumping and provided on the side of the spin barrier layer opposite the storage layer. A direction of magnetization in the storage layer is changed by passing current in a layering direction to inject spin-polarized electrons so that information is recorded in the storage layer and the spin barrier layer includes at least a material selected from oxides, nitrides, and fluorides.Type: GrantFiled: August 3, 2017Date of Patent: November 6, 2018Assignee: Sony CorporationInventors: Yutaka Higo, Masanori Hosomi, Hiroyuki Ohmori, Tetsuya Yamamoto, Kazutaka Yamane, Yuki Oishi, Hiroshi Kano
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Publication number: 20180286437Abstract: A storage element is provided. The storage element includes a memory layer; a fixed magnetization layer; an intermediate layer including a non-magnetic material; wherein the intermediate layer is provided between the memory layer and the fixed magnetization layer; wherein the fixed magnetization layer includes at least a first magnetic layer, a second magnetic layer, and a non-magnetic layer, and wherein the first magnetic layer includes a CoFeB composition. A memory apparatus and a magnetic head are also provided.Type: ApplicationFiled: June 5, 2018Publication date: October 4, 2018Inventors: Kazutaka YAMANE, Masanori HOSOMI, Hiroyuki OHMORI, Kazuhiro BESSHO, Yutaka HIGO, Tetsuya ASAYAMA, Hiroyuki UCHIDA
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Patent number: 10069062Abstract: A magnetoresistive element includes a laminated structure including a plurality of fixed layers, an intermediate layer formed of a non-magnetic material, and a recording layer, the plurality of fixed layers being laminated via a non-magnetic layer, the plurality of fixed layers having at least a first fixed layer and a second fixed layer, the following formula being satisfied: S1>S2 (wherein S1 is an area of a portion of the first fixed layer adjacent to the intermediate layer, which faces the intermediate layer, and S2 is an area of the fixed layer having the smallest area out of the fixed layers other than the first fixed layer).Type: GrantFiled: November 18, 2016Date of Patent: September 4, 2018Assignee: Sony CorporationInventors: Hiroyuki Uchida, Masanori Hosomi, Hiroyuki Ohmori, Kazuhiro Bessho, Yutaka Higo, Kazutaka Yamane
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Publication number: 20180240507Abstract: A storage element includes a layer structure including a storage layer having a direction of magnetization which changes according to information, a magnetization fixed layer having a fixed direction of magnetization, and an intermediate layer disposed therebetween, which intermediate layer contains a nonmagnetic material. The magnetization fixed layer has at least two ferromagnetic layers having a direction of magnetization tilted from a direction perpendicular to a film surface, which are laminated and magnetically coupled interposing a coupling layer therebetween. This configuration may effectively prevent divergence of magnetization reversal time due to directions of magnetization of the storage layer and the magnetization fixed layer being substantially parallel or antiparallel, reduce write errors, and enable writing operation in a short time.Type: ApplicationFiled: April 2, 2018Publication date: August 23, 2018Inventors: Yutaka Higo, Masanori Hosomi, Hiroyuki Ohmori, Kazuhiro Bessho, Tetsuya Asayama, Kazutaka Yamane, Hiroyuki Uchida
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Publication number: 20180233660Abstract: A storage element including a storage layer configured to hold information by use of a magnetization state of a magnetic material, with a pinned magnetization layer being provided on one side of the storage layer, with a tunnel insulation layer, and with the direction of magnetization of the storage layer being changed through injection of spin polarized electrons by passing a current in the lamination direction, so as to record information in the storage layer, wherein a spin barrier layer configured to restrain diffusion of the spin polarized electrons is provided on the side, opposite to the pinned magnetization layer, of the storage layer; and the spin barrier layer includes at least one material selected from the group composing of oxides, nitrides, and fluorides.Type: ApplicationFiled: March 23, 2018Publication date: August 16, 2018Applicant: Sony CorporationInventors: Yutaka Higo, Masanori Hosomi, Kazuhiro Bessho, Tetsuya Yamamoto, Hiroyuki Ohmori, Kazutaka Yamane, Yuki Oishi, Hiroshi Kano
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Publication number: 20180226113Abstract: According to some aspects, a layered structure comprises a memory layer exhibiting magnetization perpendicular to a face of the memory layer, the memory layer configured to change a direction of the magnetization in response to application of a current thereto, a magnetic layer exhibiting magnetization parallel or antiparallel to the direction of the magnetization of the memory layer and comprising a plurality of ferromagnetic layers, one or more non-magnetic layers, and an antiferromagnetic material, wherein a first non-magnetic layer of the one or more non-magnetic layers is situated between a first ferromagnetic layer of the plurality of ferromagnetic layers and a second ferromagnetic layer of the plurality of ferromagnetic layers, and wherein the antiferromagnetic material contacts at least one of the first non-magnetic layer and the first ferromagnetic layer, and an intermediate layer formed from a non-magnetic material located between the memory layer and the magnetic layer.Type: ApplicationFiled: March 30, 2018Publication date: August 9, 2018Applicant: Sony CorporationInventors: Kazutaka Yamane, Masanori Hosomi, Hiroyuki Ohmori, Kazuhiro Bessho, Yutaka Higo, Tetsuya Asayama, Hiroyuki Uchida
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Publication number: 20180226571Abstract: The present disclosure relates to a memory cell structure, a method of manufacturing a memory, and a memory apparatus that are capable of providing a memory cell structure of an MRAM, which reduces resistance of drawn wiring to be connected to an MTJ, reduces an area of a memory cell, and avoids performance degradation of the MTJ due to heat. A memory cell includes: a transistor that uses a first diffusion layer formed in a bottom portion of a concave portion formed by processing a silicon substrate into a groove shape, and a second diffusion layer formed in upper end portions of two opposing sidewall portions of the concave portion, to form channels at portions between the first diffusion layer and the second diffusion layer in the two sidewall portions; and a memory element that is disposed below the first diffusion layer. The first diffusion layer is electrically connected to the memory element via a contact formed after the silicon substrate is thinned.Type: ApplicationFiled: April 6, 2018Publication date: August 9, 2018Inventors: Taku UMEBAYASHI, Shunichi SUKEGAWA, Takashi YOKOYAMA, Masanori HOSOMI, Yutaka HIGO
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Publication number: 20180190335Abstract: Provided is a storage device, a manufacturing method therefor, and a storage apparatus that are capable of effectively suppressing variations in reversal time of spin torque reversal and stably performing high-speed operation. A storage device according to one embodiment of the present technology includes a magnetization fixed layer, an intermediate layer, and a storage layer. The magnetization fixed layer is configured to have magnetization in an orientation perpendicular to a film surface and a constant magnetization direction. The intermediate layer includes a non-magnetic body and is disposed on the magnetization fixed layer.Type: ApplicationFiled: January 19, 2016Publication date: July 5, 2018Inventors: HIROYUKI OHMORI, MASANORI HOSOMI, KAZUHIRO BESSHO, YUTAKA HIGO, KAZUTAKA YAMANE, HIROYUKI UCHIDA
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Patent number: 9997179Abstract: A storage element is provided. The storage element includes a memory layer; a fixed magnetization layer; an intermediate layer including a non-magnetic material; wherein the intermediate layer is provided between the memory layer and the fixed magnetization layer; wherein the fixed magnetization layer includes at least a first magnetic layer, a second magnetic layer, and a non-magnetic layer, and wherein the first magnetic layer includes a CoFeB composition. A memory apparatus and a magnetic head are also provided.Type: GrantFiled: April 28, 2016Date of Patent: June 12, 2018Assignee: Sony CorporationInventors: Kazutaka Yamane, Masanori Hosomi, Hiroyuki Ohmori, Kazuhiro Bessho, Yutaka Higo, Tetsuya Asayama, Hiroyuki Uchida
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Patent number: 9997698Abstract: A storage element includes a layer structure including a storage layer having a direction of magnetization which changes according to information, a magnetization fixed layer having a fixed direction of magnetization, and an intermediate layer disposed therebetween, which intermediate layer contains a nonmagnetic material. The magnetization fixed layer has at least two ferromagnetic layers having a direction of magnetization tilted from a direction perpendicular to a film surface, which are laminated and magnetically coupled interposing a coupling layer therebetween. This configuration may effectively prevent divergence of magnetization reversal time due to directions of magnetization of the storage layer and the magnetization fixed layer being substantially parallel or antiparallel, reduce write errors, and enable writing operation in a short time.Type: GrantFiled: July 25, 2017Date of Patent: June 12, 2018Assignee: Sony CorporationInventors: Yutaka Higo, Masanori Hosomi, Hiroyuki Ohmori, Kazuhiro Bessho, Tetsuya Asayama, Kazutaka Yamane, Hiroyuki Uchida
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Patent number: 9984735Abstract: According to some aspects, a layered structure includes a memory layer, a magnetization-fixed layer, and a tunnel insulating layer. The memory layer has magnetization perpendicular to a film face in which a direction of the magnetization is configured to be changed according to information by applying a current in a lamination direction of the layered structure. The magnetization-fixed layer has magnetization parallel or antiparallel to the magnetization direction of the memory layer and comprises a laminated ferripinned structure including a plurality of ferromagnetic layers and one or more non-magnetic layers, and includes a layer comprising an antiferromagnetic material formed on a first ferromagnetic layer of the plurality of ferromagnetic layers and situated between the first ferromagnetic layer and the non-magnetic layer. The tunnel insulating layer is located between the memory layer and the magnetization-fixed layer.Type: GrantFiled: April 30, 2015Date of Patent: May 29, 2018Assignee: Sony CorporationInventors: Kazutaka Yamane, Masanori Hosomi, Hiroyuki Ohmori, Kazuhiro Bessho, Yutaka Higo, Tetsuya Asayama, Hiroyuki Uchida
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Patent number: 9978933Abstract: A storage element including a storage layer configured to hold information by use of a magnetization state of a magnetic material, with a pinned magnetization layer being provided on one side of the storage layer, with a tunnel insulation layer, and with the direction of magnetization of the storage layer being changed through injection of spin polarized electrons by passing a current in the lamination direction, so as to record information in the storage layer, wherein a spin barrier layer configured to restrain diffusion of the spin polarized electrons is provided on the side, opposite to the pinned magnetization layer, of the storage layer; and the spin barrier layer includes at least one material selected from the group composing of oxides, nitrides, and fluorides.Type: GrantFiled: May 3, 2017Date of Patent: May 22, 2018Assignee: SONY CORPORATIONInventors: Yutaka Higo, Masanori Hosomi, Kazuhiro Bessho, Tetsuya Yamamoto, Hiroyuki Ohmori, Kazutaka Yamane, Yuki Oishi, Hiroshi Kano
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Patent number: 9972772Abstract: The present disclosure relates to a memory cell structure, a method of manufacturing a memory, and a memory apparatus that are capable of providing a memory cell structure of an MRAM, which reduces resistance of drawn wiring to be connected to an MTJ, reduces an area of a memory cell, and avoids performance degradation of the MTJ due to heat. A memory cell includes: a transistor that uses a first diffusion layer formed in a bottom portion of a concave portion formed by processing a silicon substrate into a groove shape, and a second diffusion layer formed in upper end portions of two opposing sidewall portions of the concave portion, to form channels at portions between the first diffusion layer and the second diffusion layer in the two sidewall portions; and a memory element that is disposed below the first diffusion layer. The first diffusion layer is electrically connected to the memory element via a contact formed after the silicon substrate is thinned.Type: GrantFiled: January 27, 2017Date of Patent: May 15, 2018Assignee: Sony CorporationInventors: Taku Umebayashi, Shunichi Sukegawa, Takashi Yokoyama, Masanori Hosomi, Yutaka Higo
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Patent number: 9917248Abstract: A memory element including a layered structure including a memory layer having magnetization perpendicular to a film face in which a direction of the magnetization is changed depending on information stored therein, a magnetization-fixed layer having magnetization perpendicular to the film face, which becomes a base of the information stored in the memory layer, and an intermediate layer that is formed of a non-magnetic material and is provided between the memory layer and the magnetization-fixed layer.Type: GrantFiled: December 7, 2016Date of Patent: March 13, 2018Assignee: SONY CORPORATIONInventors: Hiroyuki Uchida, Masanori Hosomi, Hiroyuki Ohmori, Kazuhiro Bessho, Yutaka Higo, Tetsuya Asayama, Kazutaka Yamane
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Publication number: 20180053521Abstract: [Object] To provide a storage device that realizes both a high information retention property and a low power consumption. [Solving Means] A storage device includes a fixed layer, a storage layer, an intermediate layer, and a heat generation layer. The fixed layer includes a first ferromagnetic layer that includes a fixed perpendicular magnetization. The storage layer includes a second ferromagnetic layer that includes a perpendicular magnetization invertible by a spin injection. The intermediate layer is formed of an insulator and is arranged between the storage layer and the fixed layer. The heat generation layer is formed of a resistance heating element and is arranged in at least one of the storage layer and the fixed layer. With this configuration, it becomes possible to provide a storage device that realizes both a high information retention property and a low power consumption.Type: ApplicationFiled: January 18, 2016Publication date: February 22, 2018Inventors: KAZUTAKA YAMANE, HIROYUKI UCHIDA, YUTAKA HIGO, HIROYUKI OHMORI, KAZUHIRO BESSHO, MASANORI HOSOMI
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Publication number: 20180033476Abstract: An object of the present technology is to improve the performance of a memory cell that stores the value reflecting the direction of an electric current. The memory cell includes an N-type transistor, a P-type transistor, and a storage element. The N-type transistor supplies a current either from a source to a drain thereof or from the drain to the source. The P-type transistor supplies a current from a source to a drain thereof. The storage element stores a logical value reflecting the direction of the current supplied from the drain of the N-type transistor and from the drain of the P-type transistor.Type: ApplicationFiled: January 14, 2016Publication date: February 1, 2018Inventors: MIKIO OKA, YASUO KANDA, YUTAKA HIGO
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Patent number: 9875779Abstract: A storage element includes a magnetization fixed layer, and a magnetization free layer. The magnetization fixed layer includes a plurality of ferromagnetic layers laminated together with a coupling layer formed between each pair of adjacent ferromagnetic layers. The magnetization directions of the ferromagnetic layers are inclined with respect to a magnetization direction of the magnetization fixed layer.Type: GrantFiled: January 4, 2016Date of Patent: January 23, 2018Assignee: Sony CorporationInventors: Yutaka Higo, Masanori Hosomi, Hiroyuki Ohmori, Kazuhiro Bessho, Tetsuya Asayama, Kazutaka Yamane, Hiroyuki Uchida
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Publication number: 20180006211Abstract: There is disclosed a memory element including a memory layer that has a magnetization perpendicular to a film face; a magnetization-fixed layer that has a magnetization that is perpendicular to the film face; and an insulating layer that is provided between the memory layer and the magnetization-fixed layer, wherein an electron that is spin-polarized is injected in a lamination direction of a layered structure, and thereby the magnetization direction of the memory layer varies and a recording of information is performed, a magnitude of an effective diamagnetic field which the memory layer receives is smaller than a saturated magnetization amount of the memory layer, and in regard to the insulating layer and the other side layer with which the memory layer comes into contact at a side opposite to the insulating layer, at least an interface that comes into contact with the memory layer is formed of an oxide film.Type: ApplicationFiled: July 11, 2017Publication date: January 4, 2018Inventors: Yutaka Higo, Masanori Hosomi, Hiroyuki Ohmori, Kazuhiro Bessho, Kazutaka Yamane, Hiroyuki Uchida