Abstract: A storage element includes a storage layer having a magnetization perpendicular to a layer surface and storing information according to a magnetization state of a magnetic material; a fixed magnetization layer having the magnetization as a reference of the information of the storage layer and perpendicular to the layer surface; an interlayer formed of a nonmagnetic material and interposed between the storage layer and the fixed magnetization layer; a coercive force enhancement layer adjacent to the storage layer, opposite to the interlayer, and formed of Cr, Ru, W, Si, or Mn; and a spin barrier layer formed of an oxide, adjacent to the coercive force enhancement layer, and opposite to the storage layer. The storage layer magnetization is reversed using spin torque magnetization reversal caused by a current in a lamination direction of a layer structure including the storage layer, the interlayer, and the fixed magnetization layer, thereby storing information.

Abstract: A storage element includes a storage layer, a fixed magnetization layer, a spin barrier layer, and a spin absorption layer. The storage layer stores information based on a magnetization state of a magnetic material. The fixed magnetization layer is provided for the storage layer through a tunnel insulating layer. The spin barrier layer suppresses diffusion of spin-polarized electrons and is provided on the side of the storage layer opposite the fixed magnetization layer. The spin absorption layer is formed of a nonmagnetic metal layer causing spin pumping and provided on the side of the spin barrier layer opposite the storage layer. A direction of magnetization in the storage layer is changed by passing current in a layering direction to inject spin-polarized electrons so that information is recorded in the storage layer and the spin barrier layer includes at least a material selected from oxides, nitrides, and fluorides.

Abstract: A storage element and storage devices containing the same, having a layered structure and being configured for storing information are disclosed. In one example, the storage element comprises a storage portion with a storage magnetization that is perpendicular to a film surface of the layered structure, wherein a direction of the storage magnetization is configured to change according to the information. The storage element also includes a fixed magnetization portion with reference magnetization serving as a reference to the storage magnetization, and an intermediate portion between the storage portion and the fixed magnetization portion that is made of a non-magnetic material. The fixed magnetization portion includes a laminated ferrimagnetic structure that comprises a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer. The fixed magnetization portion includes a first magnetic material that is an alloy or a laminated structure including Pt, Co, and Y.

Abstract: A storage element includes a layer structure including a storage layer having a direction of magnetization which changes according to information, a magnetization fixed layer having a fixed direction of magnetization, and an intermediate layer disposed therebetween, which intermediate layer contains a nonmagnetic material. The magnetization fixed layer has at least two ferromagnetic layers having a direction of magnetization tilted from a direction perpendicular to a film surface, which are laminated and magnetically coupled interposing a coupling layer therebetween. This configuration may effectively prevent divergence of magnetization reversal time due to directions of magnetization of the storage layer and the magnetization fixed layer being substantially parallel or antiparallel, reduce write errors, and enable writing operation in a short time.

Abstract: A memory system is provided. The memory system includes a memory area configured to include a plurality of memory cells; a driving area configured to drive the memory cells; and a control area configured to supply a standby current to the memory area before the memory area records data; a plurality of word lines is crossing to a plurality of bit lines via the plurality of memory cells; and wherein each of the memory cells includes a memory layer, a magnetic fixed layer, an intermediate layer including a non-magnetic material provided between the memory layer and the magnetic fixed layer, a top electrode provided over the memory layer, a bottom electrode provided over the magnetic fixed layer.

Abstract: A memory apparatus and a memory device are provided. The memory apparatus includes a memory device including a plurality of memory cells and a driving circuit configured to control the memory cells; wherein each of the memory cells includes a memory layer where a magnetization direction is changeable by a current, a magnetic fixed layer having a fixed magnetization, an intermediate layer including a non-magnetic material provided between the memory layer and the magnetic fixed layer, a top electrode provided over the memory layer, a bottom electrode provided over the magnetic fixed layer; wherein the current is configured to flow in a lamination direction between the top electrode and the bottom electrode.

Abstract: A storage element includes a layer structure including a storage layer having a direction of magnetization which changes according to information, a magnetization fixed layer having a fixed direction of magnetization, and an intermediate layer disposed therebetween, which intermediate layer contains a nonmagnetic material. The magnetization fixed layer has at least two ferromagnetic layers having a direction of magnetization tilted from a direction perpendicular to a film surface, which are laminated and magnetically coupled interposing a coupling layer therebetween. This configuration may effectively prevent divergence of magnetization reversal time due to directions of magnetization of the storage layer and the magnetization fixed layer being substantially parallel or antiparallel, reduce write errors, and enable writing operation in a short time.

Abstract: A storage element including a storage layer configured to hold information by use of a magnetization state of a magnetic material, with a pinned magnetization layer being provided on one side of the storage layer, with a tunnel insulation layer, and with the direction of magnetization of the storage layer being changed through injection of spin polarized electrons by passing a current in the lamination direction, so as to record information in the storage layer, wherein a spin barrier layer configured to restrain diffusion of the spin polarized electrons is provided on the side, opposite to the pinned magnetization layer, of the storage layer; and the spin barrier layer includes at least one material selected from the group composing of oxides, nitrides, and fluorides.

Abstract: There is disclosed a memory element including a memory layer that has a magnetization perpendicular to a film face; a magnetization-fixed layer that has a magnetization that is perpendicular to the film face; and an insulating layer that is provided between the memory layer and the magnetization-fixed layer, wherein an electron that is spin-polarized is injected in a lamination direction of a layered structure, and thereby the magnetization direction of the memory layer varies and a recording of information is performed, a magnitude of an effective diamagnetic field which the memory layer receives is smaller than a saturated magnetization amount of the memory layer, and in regard to the insulating layer and the other side layer with which the memory layer comes into contact at a side opposite to the insulating layer, at least an interface that comes into contact with the memory layer is formed of an oxide film.

Abstract: A storage element including a storage layer configured to hold information by use of a magnetization state of a magnetic material, with a pinned magnetization layer being provided on one side of the storage layer, with a tunnel insulation layer, and with the direction of magnetization of the storage layer being changed through injection of spin polarized electrons by passing a current in the lamination direction, so as to record information in the storage layer, wherein a spin barrier layer configured to restrain diffusion of the spin polarized electrons is provided on the side, opposite to the pinned magnetization layer, of the storage layer; and the spin barrier layer includes at least one material selected from the group composing of oxides, nitrides, and fluorides.

Abstract: A storage element includes a storage layer, a fixed magnetization layer, a spin barrier layer, and a spin absorption layer. The storage layer stores information based on a magnetization state of a magnetic material. The fixed magnetization layer is provided for the storage layer through a tunnel insulating layer. The spin barrier layer suppresses diffusion of spin-polarized electrons and is provided on the side of the storage layer opposite the fixed magnetization layer. The spin absorption layer is formed of a nonmagnetic metal layer causing spin pumping and provided on the side of the spin barrier layer opposite the storage layer. A direction of magnetization in the storage layer is changed by passing current in a layering direction to inject spin-polarized electrons so that information is recorded in the storage layer and the spin barrier layer includes at least a material selected from oxides, nitrides, and fluorides.

Abstract: A magnetic element is provided. The magnetic element includes a free magnetization layer having a surface area that is approximately 1,600 nm2 or less, the free magnetization layer including a magnetization state that is configured to be changed; an insulation layer coupled to the free magnetization layer, the insulation layer including a non-magnetic material; and a magnetization fixing layer coupled to the insulation layer opposite the free magnetization layer, the magnetization fixing layer including a fixed magnetization so as to be capable of serving as a reference of the free magnetization layer.

Abstract: The present disclosure relates to a memory cell structure, a method of manufacturing a memory, and a memory apparatus that are capable of providing a memory cell structure of an MRAM, which reduces resistance of drawn wiring to be connected to an MTJ, reduces an area of a memory cell, and avoids performance degradation of the MTJ due to heat. A memory cell includes: a transistor that uses a first diffusion layer formed in a bottom portion of a concave portion formed by processing a silicon substrate into a groove shape, and a second diffusion layer formed in upper end portions of two opposing sidewall portions of the concave portion, to form channels at portions between the first diffusion layer and the second diffusion layer in the two sidewall portions; and a memory element that is disposed below the first diffusion layer. The first diffusion layer is electrically connected to the memory element via a contact formed after the silicon substrate is thinned.

Abstract: A magnetic element is provided. The magnetic element includes a free magnetization layer having a surface area that is approximately 1,600 nm2 or less, the free magnetization layer including a magnetization state that is configured to be changed; an insulation layer coupled to the free magnetization layer, the insulation layer including a non-magnetic material; and a magnetization fixing layer coupled to the insulation layer opposite the free magnetization layer, the magnetization fixing layer including a fixed magnetization so as to be capable of serving as a reference of the free magnetization layer.

Abstract: A memory device includes a plurality of bit lines extending in a first direction, a plurality of word lines extending in a second direction crossing the first direction, and a plurality of memory cells. Each memory cell includes a memory element and two select transistors disposed along the first direction and the memory element being configured to store information based on changes in resistance. A first and a second column are formed by repeatedly arranging a first group and a second group of the memory cells, respectively, along the first direction, and the second column is disposed adjacent to the first column and the first group is displaced in the first direction such that, in the second direction, a first select transistor in respective memory cells in the first column is aligned with a second select transistor in respective memory cells in the second column.

Abstract: Provided is an information storage element comprising a first layer, an insulation layer coupled to the first layer, and a second layer coupled to the insulation layer opposite the first layer. The first layer is capable of storing information according to a magnetization state of a magnetic material. The insulation layer includes a non-magnetic material. The second layer includes a fixed magnetization. In an embodiment, the first layer has a transverse length that is approximately 45 nm or less and a volume that is approximately 2,390 nm3 or less. In a further embodiment, the second layer includes MgO and is capable of allowing electrons passing through the second layer reach the first layer before the electrons enter a non-polarized state.

Abstract: A memory element including a layered structure including a memory layer having magnetization perpendicular to a film face in which a direction of the magnetization is changed depending on information stored therein, a magnetization-fixed layer having magnetization perpendicular to the film face, which becomes a base of the information stored in the memory layer, and an intermediate layer that is formed of a non-magnetic material and is provided between the memory layer and the magnetization-fixed layer.

Abstract: A memory cell structure, a method of manufacturing a memory, and a memory apparatus that conform a memory cell structure of an MRAM, which reduces resistance of drawn wiring to be connected to an MTJ, reduces an area of a memory cell, and avoids performance degradation of the MTJ due to heat are provided. A memory cell includes: a transistor with a first diffusion layer formed in a bottom portion of a concave portion, and a second diffusion layer formed in upper end portions of two opposing sidewall portions of the concave portion, to form channels at portions between the first and second diffusion layers in the two sidewall portions; and a memory element that is disposed below the first diffusion layer. The first diffusion layer is electrically connected to the memory element via a contact formed after the silicon substrate is thinned.

Abstract: A magnetoresistive element includes a laminated structure including a plurality of fixed layers, an intermediate layer formed of a non-magnetic material, and a recording layer, the plurality of fixed layers being laminated via a non-magnetic layer, the plurality of fixed layers having at least a first fixed layer and a second fixed layer, the following formula being satisfied: S1>S2 (wherein S1 is an area of a portion of the first fixed layer adjacent to the intermediate layer, which faces the intermediate layer, and S2 is an area of the fixed layer having the smallest area out of the fixed layers other than the first fixed layer).

Abstract: A storage element is provided. The storage element includes a layer structure including a first layer having a first magnetization state of a first material, a second layer having a second magnetization state of a second material; and an intermediate layer including a nonmagnetic material and provided between the first layer and the second layer, wherein the intermediate layer includes a carbon layer.