Abstract: A thin film transistor comprises a substrate, a semiconductor layer comprising a polycrystalline silicon containing 3 atomic % or less of hydrogen provided on said substrate, a source region and a drain region provided in the surface part of said semiconductor layer, an insulating layer provided on said semiconductor layer at the portion between these two regions, a gate electrode provided on said insulating layer, a source electrode forming an electrical contact with the source region and a drain electrode forming an electrical contact with the drain region, the overlapping portions between said gate electrode through the insulating layer beneath said gate electrode and the source region and between said gate electrode through the insulating layer beneath said gate electrode and the drain region begin 2000 .ANG. or less in width.

Abstract: Optical modulation is effected by heating a monomolecular film or a built-up film of monomolecular layers.

Abstract: A display method comprises applying electrical energy to a display layer formed of a monomolecular film or a monomolecular-layer built-up film of a clathrate complex compound composed of a host molecule having a hydrophilic portion, a hydrophobic portion and a portion to enclose a guest molecule, and a guest molecule on a substrate, thereby making a display.The display may be made by color-forming or light emitting due to reduction of the guest molecules.

Abstract: A semiconductor device mainly comprises a semiconductor layer of a polycrystalline silicon film containing at least one atom selected from the group consisting of carbon, sulfur, nitrogen and oxygen as a constituent.

Abstract: A film forming method, a recording medium formed thereby, and a recording method therewith are provided. The recording medium comprises a recording layer constituted of a monomolecular film or monomolecular-layer built-up film of a clathrate complex compound comprised of a host molecule and a guest molecule, said host molecule having a hydrophilic portion, a hydrophobic portion, and a portion capable of enclosing said guest molecule.

Abstract: An image-forming member for electrophotography has a photoconductive layer comprising a hydrogenated amorphous semiconductor composed of silicon and/or germanium as a matrix and at least one chemical modifier such as carbon, nitrogen and oxygen contained in the matrix.

Abstract: A semiconductor device comprises a polycrystalline semiconductor thin film layer comprising germanium atoms as a matrix and containing 3 atomic % or less of hydrogen atoms.

Abstract: A semiconductor element is mainly composed of a polycrystalline Si thin film layer containing 0.01-3 atomic %, and further having a maximum surface unevenness of substantially not more than 800 .ANG. and/or a particular range of etching rate when etched with a predetermined etchant.

Abstract: A photometric apparatus includes a light source, apparatus for oscillating a light beam spot across a sample, apparatus for measuring secondary light from the sample, and apparatus for determining the specific portion of the sample to be examined by photometry. With this photometric apparatus, each of a plurality of microscopic areas of the sample can be evaluated accurately.

Abstract: A semi-conductor device comprising a lamination of a photoconductive layer, a charge-retaining layer and a display layer, provided between electroconductive films, and an electronic apparatus utilizing said semi-conductor device are provided.

Abstract: A film forming method, a recording medium formed thereby, and a recording method therewith are provided. The recording medium comprises a recording layer constituted of a monomolecular film or monomolecular-layer built-up film of a clathrate complex compound comprised of a host molecule and a guest molecule, said host molecule having a hydrophilic portion, a hydrophobic portion, and a portion capable of enclosing said guest molecule.

Abstract: A method for forming a deposited film comprises forming a gaseous atmosphere of a silane compound represented by the general formula: Si.sub.n H.sub.2n+2 (n.gtoreq.1) and a halogen compound in a deposition chamber in which a substrate is arranged, and exciting and decomposing these compounds by utilization of photoenergy thereby to form the deposited film containing silicon atoms on said substrate.A method for forming a deposited film comprises forming a gaseous atmosphere of a silane compound represented by the general formula: Si.sub.n H.sub.2n+2 (n.gtoreq.1), a halogen compound and a compound containing atoms belonging too the group III or the group V of the periodic table in a deposition chamber in which a substrate is arranged, and exciting and decomposing these compounds by utilization of photoenergy thereby to form a deposited film containing silicon atoms and the atoms belonging to the group III or the group V of the periodic table on said substrate.

Abstract: A method of forming a silicon-containing film deposited on a substrate, which comprises the steps of forming a gaseous atmosphere of at least one silicon compound selected from the group consisting of compounds represented by general formulas (A), (B), (C), (D), (E) and (F) in a deposition chamber containing the substrate, and applying light energy to the compound to exite and decompose the compound. The compounds of the general formulas (A)-(F) are defined below: (A) Si.sub.n H.sub.m X.sub.l (wherein X is a halogen atom, n is an integer of not less than 3, and m and l are integers of not less than 1, respectively, m+l=2n; if l is an integer of not less than 2, a plurality of X's may represent different halogen atoms) representing a cyclic silicon compound; (B) Si.sub.a X.sub.2a+2 (wherein X is a halogen atom and a is an integer of 1 to 6) representing a chain halogenated silicon compound; (C) Si.sub.b X.sub.

Abstract: A method of forming a deposited film comprises forming a gaseous atmosphere of at least one silicon compound selected from those having the formula (A), (B) or (C) as shown below in a deposition chamber in which a substrate is arranged, and exciting and decomposing said compound by utilization of light energy thereby to form a desired film containing silicon atoms on said substrate: ##STR1## wherein l represents 3, 4 or 5; and R represents H or SiH.sub.3 ; ##STR2## wherein R.sup.1 and R.sup.2 independently represent H or an alkyl group having 1 to 3 carbon atoms; m an integer of 3 to 7; and n an integer of 1 to 11;R.sup.1 --(Si.multidot.R.sup.2 R.sup.3).sub.p --R.sup.4 (c)wherein R.sup.1 and R.sup.4 independently represent a phenyl or naphthyl group which may be substituted with halogens, or an alkyl group having 1 to 11 carbon atoms; R.sup.2 and R.sup.3 independently represent H or CH.sub.3 ; and p represents an integer of 3 to 7.

Abstract: A process for producing deposition films is provided which comprises forming a gaseous atmosphere of at least one compound silicon hydride selected from the group consisting of;(A) straight chain silicon hydrides represented by the general formulaSi.sub.n H.sub.2n+2wherein n is an integer 4 or more;(B) cyclic silicon hydrides unsubstituted or substituted by a linear or branched silicon hydride residue which are represented by the general formulaSi.sub.m H.sub.2mwherein m is 3, 4, 5, or 6; and(C) branched chain silicon hydrides represented by the general formulaSi.sub.p H.sub.qwherein p is an integer of 4 or more and q is an interger of 10 or more;in a reaction chamber containing a substrate, and exerting light energy on the atmosphere to excite and decompose the silicon hydride, thereby a silicon-containing layer on the substrate.

Abstract: Image-forming member for electrophotography comprising a charge generation layer composed of hydrogenated amorphous silicon.

Abstract: A process for the preparation of 5,6,7,8-tetrahydrofolic acid which comprises dissolving and/or suspending folic acid or dihydrofolic acid in an aqueous solution containing an inorganic base, and bringing the resulting solution or suspension into contact with hydrogen in the presence of a noble metal catalyst while maintaining its pH at 5-9, thereby catalytically hydrogenating the folic acid of dihydrofolic acid into 4,5,6,7-tetrahydrofolic acid.

Abstract: An image-forming member for electro-photography has a photoconductive layer comprising a hydrogenated amorphous semiconductor composed of silicon and/or germanium as a matrix and at least one chemical modifier such as carbon, nitrogen and oxygen contained in the matrix.

Abstract: A method for forming a deposited film comprises forming in a vacuum chamber housing a substrate therein a deposited film containing silicon on the substrate by subjecting a gas represented by the general formula: ##STR1## wherein R.sup.1, R.sup.2, R.sup.3 and R.sup.4, can be the same or different and are each independently hydrogen or a hydrocarbon group, to polymerization.

Abstract: A recording medium and an image recording process in which a change in enzyme activity by light irradiation is utilized.