Abstract: A photodetector includes: a semiconductor substrate having a first main surface and a second main surface; a first semiconductor layer that is of a first conductivity type, and is included in the semiconductor substrate and closer to the first main surface than to the second main surface; a second semiconductor layer that is of a second conductivity type different from the first conductivity type, and is included in the semiconductor substrate and interposed between the first semiconductor layer and the second main surface; a multiplication region that causes avalanche multiplication to a charge generated in the semiconductor substrate through photoelectric conversion; a circuit region disposed alongside the first semiconductor layer in a direction parallel to the first main surface; at least one isolation transistor disposed in the circuit region; and an isolation region interposed between the first semiconductor layer and the circuit region.

Abstract: In an object information generation system, an imaging unit is configured to capture a plurality of segment images respectively corresponding to a plurality of distance segments dividing a target space. In a signal processor, the object region extraction unit extracts, from a plurality of segment images, an object region that is a pixel region including an image of the object. An object information generation unit determines, for the object region, a window in which calculation-target pixels are cut out, and generates distance information of the object by calculation using information of a plurality of pixels in the window for two or more segment images.

Abstract: An imaging device including a photoelectric converter that generates signal charge; a charge storage region that stores the signal charge; a first transistor that has a gate coupled to the charge storage region and reads out the signal charge; a second transistor that has a source and a drain, an output of the first transistor being fed back to one of the source and the drain and being supplied to the charge storage region from the other of the source and the drain; and voltage supply circuitry that supplies voltages varying with time. In a reset operation for discharging the signal charge stored in the charge storage region, the voltage supply circuitry supplies the voltages to a gate of the second transistor.

Abstract: A photodetector includes: a single-photon avalanche diode (SPAD); and a first resistor connected in series to the SPAD. In a recharge period in which an electric charge is discharged from the SPAD via the first resistor, an electric charge disappears from a multiplication region in the SPAD.

Abstract: An imaging device including: a photoelectric converter that generates signal charge; a charge storage region that stores the signal charge; a first transistor that has a gate coupled to the charge storage region and reads out the signal charge; a second transistor that, has a source and a drain, an output of the first transistor being fed back to one of the source and the drain and being supplied to the charge storage region from the other of the source and the drain; and voltage supply circuitry that supplies voltages varying with time. In a reset operation for discharging the signal charge stored in the charge storage region, the voltage supply circuitry supplies the voltages to a gate of the second transistor so that the second transistor gradually changes from an OFF state to an ON state.

Abstract: An imaging device including a semiconductor substrate that includes a first impurity region; a photoelectric converter that is coupled to the first impurity region and that converts light into charges; a capacitor that includes a first terminal and a second terminal, the first terminal coupled to the first impurity region; voltage supply circuitry coupled to the second terminal; a first transistor including the first impurity region as a source or a drain; and control circuitry. The control circuitry is programmed to cause the voltage supply circuitry to supply a first voltage in a first period, and to cause the voltage supply circuitry to supply a second voltage different from the first voltage in a second period continuous to the first period, the first transistor being in on-state in the first period, the first transistor being in off-state in the second period.

Abstract: An information processing system includes an object information generator and an output unit. The object information generator generates object information. A piece of the object information indicates a feature of an object present in a target distance section. The target distance section is one selected from a plurality of distance sections defined by dividing the distance measurable range in accordance with differences in elapsed times from a point of time when a light emitting unit emits a measuring light. The object information generator generates the piece of the object information based on a distance section signal associated with the target distance section. The output unit outputs the object information.

Abstract: An object detection system includes a light emitter, an optical sensor, a controller, and a signal processor. The controller controls the light emitter and the optical sensor to cause range segment signals to be outputted from the optical sensor for corresponding range segments. The signal processor includes: a target object information generator that includes a plurality of generators (a first generator through a fifth generator) capable of operating in parallel and generates items of target object information indicating features of target objects for the range segments; and storage that stores the items of target object information. The target object information generator compares a past one of the items of target object information stored in the storage with a feature of a current one of the target objects detected by the optical sensor to generate a corresponding one of the items of target object information.

Abstract: An imaging device includes: a solid-state imaging element having a plurality of pixel cells arranged in a matrix; and a signal processing part configured to process a detection signal outputted from each of the pixel cells. The pixel cells each include an avalanche photodiode and output a voltage corresponding to a count number of photons received by the avalanche photodiode as the detection signal. The signal processing part includes a variation calculation part configured to calculate a variation between the pixel cells in the detection signal outputted from each of the pixel cells, and a correction calculation part configured to correct the detection signal outputted from each of the pixel cells, on the basis of the variation calculated by the variation calculation part.

Abstract: An imaging device includes: a solid-state imaging element having a plurality of pixel cells arranged in a matrix; and a control part configured to control the solid-state imaging element. The pixel cells each include an avalanche photodiode, a floating diffusion part configured to accumulate electric charges, a transfer transistor connecting a cathode of the avalanche photodiode and the floating diffusion part, and a reset transistor for resetting electric charges accumulated in the floating diffusion part. The control part controls the reset transistor to discharge electric charges exceeding a predetermined electric charge amount, of electric charges accumulated in the floating diffusion part from the cathode of the avalanche photodiode via the transfer transistor.

Abstract: The photosensor includes an APD that has a multiplication region including a photoelectric converter and includes a first capacitor connected to the multiplication region in parallel, and a first transistor connected between the APD and a first power supply (voltage VC). The first transistor applies a reverse bias of a power supply voltage (VC-VA), which is larger than a breakdown voltage VBD, between an anode and a cathode of the APD during a bias setting period by connecting the APD to the first power supply, and stops an avalanche multiplication phenomenon during a light exposing period by disconnecting the APD from the first power supply to accumulate charges generated by the avalanche multiplication phenomenon in the first capacitor.

Abstract: An imaging device including a semiconductor substrate that includes a first impurity region; a photoelectric converter that is coupled to the first impurity region and that converts light into charges; a capacitor that includes a first terminal and a second terminal, the first terminal coupled to the first impurity region; voltage supply circuitry coupled to the second terminal; a first transistor including the first impurity region as a source or a drain; and control circuitry. The control circuitry is programmed to cause the voltage supply circuitry to supply a first voltage in a first period, and to cause the voltage supply circuitry to supply a second voltage different from the first voltage in a second period continuous to the first period, the first transistor being in on-state in the first period, the first transistor being in off-state in the second period.

Abstract: A solid-state image sensor capable of detecting a photon and having smaller circuit scale is provided. The solid-state image sensor includes a pixel array including a plurality of pixel cells, a pixel driving circuit configured to drive the plurality of pixel cells, a readout circuit, and a plurality of readout wires corresponding to respective columns of the pixel cell. Each of the plurality of pixel cells includes an avalanche photodiode configured to detect a photon by avalanche multiplication occurring when one photon enters, and a transfer transistor configured to transfer a detection result of the photon to the corresponding readout wire. The readout circuit determines whether a photon is detected or not, and outputs a determination result.

Abstract: An imaging device includes a semiconductor substrate that includes a first impurity region having n-type conductivity; a photoelectric converter that is electrically connected to the first impurity region and that converts light into charges; a capacitor that includes a first terminal and a second terminal, the first terminal being electrically connected to the first impurity region; and a voltage supply circuit electrically connected to the second terminal. The voltage supply circuit is configured to generate a first voltage and a second voltage different from the first voltage. The first impurity region accumulates positive charges generated by the photoelectric converter.

Abstract: A distance measuring device includes a control unit and a measuring unit. The control unit controls a photodetector unit. The photodetector unit includes a photoelectric transducer element and an output unit. The photoelectric transducer element generates electrical charges on receiving light reflected from a target as a part of measuring light emitted from a light-emitting unit. The output unit outputs an electrical signal representing a quantity of the electrical charges generated by the photoelectric transducer element. The measuring unit calculates, in accordance with the electrical signal, a distance to the target within a measurable range. The control unit sets, in each of a plurality of intervals that form the measurable range, a conversion ratio of the quantity of the electrical charges generated by the photoelectric transducer element to a quantity of the light received by the photoelectric transducer element.

Abstract: A photodetector includes: a semiconductor substrate having a first main surface and a second main surface; a first semiconductor layer that is of a first conductivity type, and is included in the semiconductor substrate and closer to the first main surface than to the second main surface; a second semiconductor layer that is of a second conductivity type different from the first conductivity type, and is included in the semiconductor substrate and interposed between the first semiconductor layer and the second main surface; a multiplication region that causes avalanche multiplication to a charge generated in the semiconductor substrate through photoelectric conversion; a circuit region disposed alongside the first semiconductor layer in a direction parallel to the first main surface; at least one isolation transistor disposed in the circuit region; and an isolation region interposed between the first semiconductor layer and the circuit region.

Abstract: A solid-state image sensor capable of detecting a photon and having smaller circuit scale is provided. The solid-state image sensor includes a pixel array including a plurality of pixel cells, a pixel driving circuit configured to drive the plurality of pixel cells, a readout circuit, and a plurality of readout wires corresponding to respective columns of the pixel cell. Each of the plurality of pixel cells includes an avalanche photodiode configured to detect a photon by avalanche multiplication occurring when one photon enters, and a transfer transistor configured to transfer a detection result of the photon to the corresponding readout wire. The readout circuit determines whether a photon is detected or not, and outputs a determination result.

Abstract: An imaging device includes: one or more pixels, each of the one or more pixels including a photoelectric converter including a first electrode, a second electrode, a photoelectric conversion layer that converts incident light into a signal charge, and a blocking layer; and a charge accumulation region that is coupled to the second electrode, and that accumulates the signal charge. An energy barrier of the blocking layer against migration of a charge having an opposite polarity to a polarity of the signal charge from the second electrode to the photoelectric conversion layer is larger than or equal to 1.8 eV, and an energy barrier of the blocking layer against migration of the charge from the photoelectric conversion layer to the second electrode is smaller than or equal to 1.6 eV.

Abstract: The photosensor includes an APD that has a multiplication region including a photoelectric converter and includes a first capacitor connected to the multiplication region in parallel, and a first transistor connected between the APD and a first power supply (voltage VC). The first transistor applies a reverse bias of a power supply voltage (VC-VA), which is larger than a breakdown voltage VBD, between an anode and a cathode of the APD during a bias setting period by connecting the APD to the first power supply, and stops an avalanche multiplication phenomenon during a light exposing period by disconnecting the APD from the first power supply to accumulate charges generated by the avalanche multiplication phenomenon in the first capacitor.