Abstract: The invention provides a metal air battery with improved discharge characteristics compared to conventional ones. This is achieved by a metal air battery including a positive electrode layer, a negative electrode layer, and an electrolyte layer positioned between the positive electrode layer and the negative electrode layer, wherein the positive electrode layer includes an electroconductive material, a binder, and a SiO2 particle, and wherein the SiO2 particle has a specific surface area of 16.7 m2/g or less.

Abstract: An air electrode for use in an air battery includes at least a conductive material and an inorganic fluoride, with the inorganic fluoride being included in a ratio of from 11 to 22 wt % per 100 wt % of the conductive material and the inorganic fluoride combined.

Abstract: Solid-state imaging device of the present invention is a backside-illumination-type solid-state imaging device including wiring layer formed on first surface side of semiconductor substrate; and light receiving section that photoelectrically converts light incident from second surface side that is opposite from first surface side, wherein spontaneous polarization film formed of a material having spontaneous polarization is formed on a light receiving surface of light receiving section. Accordingly, a hole accumulation layer can be formed on the light receiving surface of light receiving section, and a dark current can be suppressed.

Abstract: A solid-state imaging device includes: a first electrode formed above a semiconductor substrate; a photoelectric conversion film formed on the first electrode and for converting light into signal charges; a second electrode formed on the photoelectric conversion film; a charge accumulation region electrically connected to the first electrode and for accumulating the signal charges converted from the light by the photoelectric conversion film; a reset gate electrode for resetting the charge accumulation region; an amplification transistor for amplifying the signal charges accumulated in the charge accumulation region; and a contact plug in direct contact with the charge accumulation region, comprising a semiconductor material, and for electrically connecting to each other the first electrode and the charge accumulation region.

Abstract: A solid-state imaging device according to the present invention includes pixels which are arranged two-dimensionally and each of which includes: a light absorbing layer that converts light into signal charges; a signal read circuit to read out the signal charges, the signal read circuit being formed on a side opposite to a light incident plane side of the light absorbing layer; a metal layer that is formed on the light incident plane side of the light absorbing layer, the metal layer having an aperture to transmit, into the light absorbing layer, light of a wavelength range depending on a shape of the aperture, a driving circuit that applies a voltage to the metal layer to generate, in the light absorbing layer, a potential gradient to collect the signal charges.

Abstract: A solid-state imaging device includes semiconductor substrate; a plurality of photoelectric conversion sections of n-type that are formed at an upper part of semiconductor substrate and arranged in a matrix; output circuit that is formed on a charge detection surface that is one surface of semiconductor substrate and detects charges stored in photoelectric conversion sections; a plurality of isolating diffusion layers of a p-type that are formed under output circuit and include high concentration p-type layers adjacent to respective photoelectric conversion sections; and color filters formed on a light incident surface that is the other surface opposing the one surface of semiconductor substrate and transmit light with different wavelengths. Shapes of respective photoelectric conversion sections correspond to color filters and differ depending on the high concentration p-type layer configuring isolating diffusion layer.

Abstract: A solid-state imaging device includes: a substrate; an insulator layer formed on the substrate; a semiconductor layer formed on the insulator layer; and a silicon layer formed on the semiconductor layer. The silicon layer includes a plurality of pixels each including a photoelectric converter configured to convert light into signal charge, and a circuit configured to read the signal charge, and a refractive index of the insulator layer is lower than a refractive index of the semiconductor layer.

Abstract: A solid-state imaging device includes: a substrate; a plurality of first electrodes arranged in a matrix above the substrate, and electrically isolated from each other; an insulator layer covering the first electrodes, having a planarized upper surface, and comprising an insulator; a photoelectric conversion film which is formed above the insulator layer, and converts light into signal charges; a second electrode formed above the photoelectric conversion film; and a signal readout circuit which is formed on the substrate, and generates a readout signal by detecting an amount of current change or voltage change caused by the signal charges at each of the first electrodes, in which the insulator layer allows conduction of at least electrons or holes by quantum mechanical tunneling.

Abstract: A solid-state image sensor having a configuration which reduces increases in light-collection loss and light mixing due to an increase in the angle of light entering into a waveguide path during oblique incidence and which is effective for sensitivity improvement includes: an Si substrate; unit-pixels arranged on the Si substrate; a wiring layer formed on the unit-pixels; optical waveguide regions each formed on a photoelectric conversion region included in a corresponding one of the unit-pixels, and penetrating the wiring layer; and light-collecting elements each formed above a corresponding one of the optical waveguide regions, wherein each of the light-collecting elements is a gradient index microlens having an effective refractive index distribution.

Abstract: Provided are a solid battery which can reduce overvoltage and a regeneration method thereof. The solid battery comprises: an anode capable of absorbing and releasing an alkali metal ion or alkaline earth metal ion; a solid electrolyte layer containing a solid electrolyte having ion conductivity and disposed in a manner to contact the anode; a cathode capable of releasing and absorbing the alkali metal ion or alkaline earth metal ion which moves between the anode and cathode; a heating device to heat the anode to a temperature at which it softens; and a fastening device capable of applying force to closely contact the solid electrolyte layer with the anode. The regeneration method comprises the steps of heating the anode to a temperature at which it softens, and compressing the softened anode, in a direction intersecting a face of the anode which contacts with the solid electrolyte layer.

Abstract: A main object of the present invention is to provide a Li—La—Zr—O-based solid electrolyte material having favorable denseness. The present invention solves the problem by providing a solid electrolyte material including Li, La, Zr, Al, Si and O, having a garnet structure, and being a sintered body.

Abstract: A negative electrode structure for aqueous electrolyte comprising at least a negative electrode active material layer, wherein the negative electrode active material layer comprises, as the negative electrode active material, at least one selected from the group consisting of the following metals and alloys comprising at least one of the metals: Li, Na, K, Ca, Mg, Zn, Al and Ag, and wherein a solid electrolyte layer comprising a Zr-containing garnet-type solid electrolyte described by the following formula (1), is provided on one side of the negative electrode active material layer: Formula (1): Li5+xLayZrzO12 wherein 0<x?3, 0?y?3 and 0?z?2.

Abstract: Solid-state imaging device of the present invention is a backside-illumination-type solid-state imaging device including wiring layer formed on first surface side of semiconductor substrate; and light receiving section that photoelectrically converts light incident from second surface side that is opposite from first surface side, wherein spontaneous polarization film formed of a material having spontaneous polarization is formed on a light receiving surface of light receiving section. Accordingly, a hole accumulation layer can be formed on the light receiving surface of light receiving section, and a dark current can be suppressed.

Abstract: A solid-state imaging device includes semiconductor substrate; a plurality of photoelectric conversion sections of n-type that are formed at an upper part of semiconductor substrate and arranged in a matrix; output circuit that is formed on a charge detection surface that is one surface of semiconductor substrate and detects charges stored in photoelectric conversion sections; a plurality of isolating diffusion layers of a p-type that are formed under output circuit and include high concentration p-type layers adjacent to respective photoelectric conversion sections; and color filters formed on a light incident surface that is the other surface opposing the one surface of semiconductor substrate and transmit light with different wavelengths. Shapes of respective photoelectric conversion sections correspond to color filters and differ depending on the high concentration p-type layer configuring isolating diffusion layer.

Abstract: An air battery which is capable of detecting entering of water quickly. The air battery includes: a power section which includes an air electrode, an anode containing an alkali metal, and an electrolyte layer containing an electrolyte for conducting ion between the air electrode and the anode; and a housing configured to receive the power section, a pH-detecting means being provided inside the housing.

Abstract: According to a method for fabricating a semiconductor device, a first semiconductor layer made of a first nitride semiconductor is formed over a substrate. Thereafter, a mask film covering part of the upper surface of the first semiconductor layer is selectively formed on the first semiconductor layer. A multilayer film, in which second and third nitride semiconductors having different band gaps are stacked, is selectively formed on the first semiconductor layer with the mask film used as a formation mask. On the multilayer film, an ohmic electrode is formed.

Abstract: A solid-state image sensor having a configuration which reduces increases in light-collection loss and light mixing due to an increase in the angle of light entering into a waveguide path during oblique incidence and which is effective for sensitivity improvement includes: an Si substrate; unit-pixels arranged on the Si substrate; a wiring layer formed on the unit-pixels; optical waveguide regions each formed on a photoelectric conversion region included in a corresponding one of the unit-pixels, and penetrating the wiring layer; and light-collecting elements each formed above a corresponding one of the optical waveguide regions, wherein each of the light-collecting elements is a gradient index microlens having an effective refractive index distribution.

Abstract: A semiconductor device of the present invention includes: a III-V nitride semiconductor layer including a channel region in which carriers travel; a concave portion provided in an upper portion of the channel region in the III-V nitride semiconductor layer; and a Schottky electrode consisting of a conductive material forming a Schottky junction with the semiconductor layer, and formed on a semiconductor layer, which spreads over the concave portion and peripheral portions of the concave portion, on the III-V nitride semiconductor layer. A dimension of the concave portion in a depth direction is set so that a portion of the Schottky electrode provided in the concave portion can adjust a quantity of the carriers traveling in the channel region.

Abstract: Provided is an electromagnetic wave reception device capable of being downsized and directly and simply (at least at a room temperature) detecting electromagnetic waves in a wider bandwidth including the terahertz range. The electromagnetic wave reception device that obtains charges according to an electric field of the electromagnetic waves incident on a semiconductor substrate includes: a high charge-density region provided on the semiconductor substrate and having a first charge density; a conductive region covering the high charge-density region via an insulation region; and a low charge-density region provided adjacent to the high charge-density region on the semiconductor substrate and having a second charge density lower than the first charge density, wherein the low charge-density region is connected to a charge detecting circuit that is not illustrated.

Abstract: A semiconductor device includes a semiconductor substrate of n-type silicon including, in an upper portion thereof, a first polarity inversion region and a second polarity inversion regions spaced from each other and doped with a p-type impurity. A first HFET including a first active layer and a second HFET including a second active layer both made of a group III-V nitride semiconductor are independently formed on the respective polarity inversion regions in the semiconductor substrate, and the HFETs are electrically connected to each other through interconnects.