Patents by Inventor Yutaka Mikawa
Yutaka Mikawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9890474Abstract: An object of the present invention is to provide a crystal of a nitride of a Group-13 metal on the Periodic Table which has good crystallinity and has no crystal strain, and to provide a production method for the crystal. The crystal of a nitride of a Group-13 metal on the Periodic Table of the present invention, comprises oxygen atom and hydrogen atom in the crystal and has a ratio of a hydrogen concentration to an oxygen concentration therein of from 0.5 to 4.5.Type: GrantFiled: August 21, 2015Date of Patent: February 13, 2018Assignee: MITSUBISHI CHEMICAL CORPORATIONInventors: Yutaka Mikawa, Hideo Namita, Hirotaka Ikeda, Kazunori Kamada, Hideo Fujisawa, Atsuhiko Kojima
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Publication number: 20170327971Abstract: A new GaN single crystal is provided. A GaN single crystal according to the present embodiment comprises a gallium polar surface which is a main surface on one side and a nitrogen polar surface which is a main surface on the opposite side, wherein on the gallium polar surface is found at least one square area, an outer periphery of which is constituted by four sides each with a length of 2 mm or more, and, when the at least one square are is divided into a plurality of sub-areas each of which is a square of 100 ?m×100 ?m, pit-free areas account for 80% or more of the sub-areas.Type: ApplicationFiled: July 28, 2017Publication date: November 16, 2017Applicant: MITSUBISHI CHEMICAL CORPORATIONInventors: Hideo FUJISAWA, Yutaka MIKAWA, Shinichiro KAWABATA, Hideo NAMITA, Tae MOCHIZUKI
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Patent number: 9673046Abstract: The invention provides a nonpolar or semipolar GaN substrate, in which a nitride semiconductor crystal having a low stacking fault density can be epitaxially grown on the main surface of the substrate, and a method for manufacturing an M-plane GaN substrate by forming a mask pattern having a line-shaped opening parallel to an a-axis of a C-plane GaN substrate on an N-polar plane of the C-plane GaN substrate, growing a plane-shape GaN crystal of which thickness direction is an m-axis direction from the opening of the mask pattern by an ammonothermal method, and cutting out the M-plane GaN substrate from the plane-shape GaN crystal.Type: GrantFiled: June 16, 2015Date of Patent: June 6, 2017Assignee: MITSUBISHI CHEMICAL CORPORATIONInventors: Yusuke Tsukada, Shuichi Kubo, Kazunori Kamada, Hideo Fujisawa, Tatsuhiro Ohata, Hirotaka Ikeda, Hajime Matsumoto, Yutaka Mikawa
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Publication number: 20170051434Abstract: A high-quality nitride crystal can be produced efficiently by charging a nitride crystal starting material that contains tertiary particles having a maximum diameter of from 1 to 120 mm and formed through aggregation of secondary particles having a maximum diameter of from 100 to 1000 ?m, in the starting material charging region of a reactor, followed by crystal growth in the presence of a solvent in a supercritical state and/or a subcritical state in the reactor, wherein the nitride crystal starting material is charged in the starting material charging region in a bulk density of from 0.7 to 4.5 g/cm3 for the intended crystal growth.Type: ApplicationFiled: November 9, 2016Publication date: February 23, 2017Applicant: MITSUBISHI CHEMICAL CORPORATIONInventors: Yutaka MIKAWA, Hideo FUJISAWA, Kazunori KAMADA, Hirobumi NAGAOKA, Shinichiro KAWABATA, Yuji KAGAMITANI
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Patent number: 9518337Abstract: A high-quality nitride crystal can be produced efficiently by charging a nitride crystal starting material that contains tertiary particles having a maximum diameter of from 1 to 120 mm and formed through aggregation of secondary particles having a maximum diameter of from 100 to 1000 ?m, in the starting material charging region of a reactor, followed by crystal growth in the presence of a solvent in a supercritical state and/or a subcritical state in the reactor, wherein the nitride crystal starting material is charged in the starting material charging region in a bulk density of from 0.7 to 4.5 g/cm3 for the intended crystal growth.Type: GrantFiled: May 15, 2015Date of Patent: December 13, 2016Assignee: MITSUBISHI CHEMICAL CORPORATIONInventors: Yutaka Mikawa, Hideo Fujisawa, Kazunori Kamada, Hirobumi Nagaoka, Shinichiro Kawabata, Yuji Kagamitani
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Publication number: 20160319460Abstract: A disc-like GaN substrate is a substrate produced by a tiling method and having an angel between the normal line and m-axis on the main surface of the substrate of 0 to 20° inclusive and a diameter of 45 to 55 mm, to 4 or less. In a preferred embodiment, a disc-like GaN substrate has a first main surface and a second main surface that is opposite to the first main surface, and which has an angle between the normal line and m-axis on the first main surface of 0 to 20° inclusive and a diameter of 45 mm or more. The disc-like GaN substrate comprises at least four crystalline regions each being exposed to both of the first main surface and the second main surface, wherein the four crystalline regions are arranged in line along the direction of the orthogonal projection of c-axis on the first main surface.Type: ApplicationFiled: July 14, 2016Publication date: November 3, 2016Applicant: MITSUBISHI CHEMICAL CORPORATIONInventors: Yusuke TSUKADA, Satoru NAGAO, Kazunori KAMADA, Masayuki TASHIRO, Kenji FUJITO, Hideo FUJISAWA, Yutaka MIKAWA, Tetsuharu KAJIMOTO, Takashi FUKADA
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Publication number: 20160233306Abstract: An object is to provide a nonpolar or semipolar GaN substrate having improved size and crystal quality. A self-standing GaN substrate has an angle between the normal of the principal surface and an m-axis of 0 degrees or more and 20 degrees or less, wherein: the size of the projected image in a c-axis direction when the principal surface is vertically projected on an M-plane is 10 mm or more; and when an a-axis length is measured on an intersection line between the principal surface and an A-plane, a low distortion section with a section length of 6 mm or more and with an a-axis length variation within the section of 10.0×10?5 ? or less is observed.Type: ApplicationFiled: February 5, 2016Publication date: August 11, 2016Applicant: Mitsubishi Chemical CorporationInventors: Satoru NAGAO, Yusuke Tsukada, Kazunori Kamada, Shuichi Kubo, Hirotaka Ikeda, Kenji Fujito, Hideo Fujisawa, Yutaka Mikawa, Tae Mochizuki
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Publication number: 20150361587Abstract: An object of the present invention is to provide a crystal of a nitride of a Group-13 metal on the Periodic Table which has good crystallinity and has no crystal strain, and to provide a production method for the crystal. The crystal of a nitride of a Group-13 metal on the Periodic Table of the present invention, comprises oxygen atom and hydrogen atom in the crystal and has a ratio of a hydrogen concentration to an oxygen concentration therein of from 0.5 to 4.5.Type: ApplicationFiled: August 21, 2015Publication date: December 17, 2015Applicant: MITSUBISHI CHEMICAL CORPORATIONInventors: Yutaka MIKAWA, Hideo NAMITA, Hirotaka IKEDA, Kazunori KAMADA, Hideo FUJISAWA, Atsuhiko KOJIMA
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Patent number: 9192910Abstract: To grow a highly pure nitride crystal having a low oxygen concentration efficiently by an ammonothermal method. A process for producing a nitride crystal, which comprises bringing a reactant gas reactive with ammonia to form a mineralizer, and ammonia into contact with each other to prepare a mineralizer in a reactor or in a closed circuit connected to a reactor; and growing a nitride crystal by an ammonothermal method in the presence of the ammonia and the mineralizer.Type: GrantFiled: January 7, 2010Date of Patent: November 24, 2015Assignees: Mitsubishi Chemical Corporation, Tohoku UniversityInventors: Yutaka Mikawa, Makiko Kiyomi, Yuji Kagamitani, Toru Ishiguro
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Publication number: 20150311068Abstract: The main purpose of the present invention is to provide: a nonpolar or semipolar GaN substrate, in which a nitride semiconductor crystal having a low stacking fault density can be epitaxially grown on the main surface of the substrate, and a technique required for the production of the substrate. This invention provides: a method for manufacturing an M-plane GaN substrate comprising; forming a mask pattern having a line-shaped opening parallel to an a-axis of a C-plane GaN substrate on an N-polar plane of the C-plane GaN substrate, growing a plane-shape GaN crystal of which thickness direction is an m-axis direction from the opening of the mask pattern by an ammonotharmal method, and cutting out the M-plane GaN substrate from the plane-shape GaN crystal.Type: ApplicationFiled: June 16, 2015Publication date: October 29, 2015Applicant: MITSUBISHI CHEMICAL CORPORATIONInventors: Yusuke TSUKADA, Shuichi KUBO, Kazunori KAMADA, Hideo FUJISAWA, Tatsuhiro OHATA, Hirotaka IKEDA, Hajime MATSUMOTO, Yutaka MIKAWA
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Patent number: 9163324Abstract: A method for producing a nitride crystal, comprising growing a nitride crystal on the surface of a seed crystal put in a reactor while the temperature and the pressure inside the reactor that contains, as put thereinto, a seed crystal having a hexagonal-system crystal structure, a nitrogen-containing solvent, a starting material, and a mineralizing agent containing fluorine and at least one halogen element selected from chlorine, bromine and iodine are so controlled that the solvent therein could be in a supercritical state and/or a subcritical state to thereby grow a nitride crystal on the surface of the seed crystal in the reactor.Type: GrantFiled: March 22, 2012Date of Patent: October 20, 2015Assignee: MITSUBISHI CHEMICAL CORPORATIONInventors: Hideo Fujisawa, Yutaka Mikawa, Kazunori Kamada
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Publication number: 20150247256Abstract: A high-quality nitride crystal can be produced efficiently by charging a nitride crystal starting material that contains tertiary particles having a maximum diameter of from 1 to 120 mm and formed through aggregation of secondary particles having a maximum diameter of from 100 to 1000 ?m, in the starting material charging region of a reactor, followed by crystal growth in the presence of a solvent in a supercritical state and/or a subcritical state in the reactor, wherein the nitride crystal starting material is charged in the starting material charging region in a bulk density of from 0.7 to 4.5 g/cm3 for the intended crystal growth.Type: ApplicationFiled: May 15, 2015Publication date: September 3, 2015Applicant: MITSUBISHI CHEMICAL CORPORATIONInventors: Yutaka MIKAWA, Hideo FUJISAWA, Kazunori KAMADA, Hirobumi NAGAOKA, Shinichiro KAWABATA, Yuji KAGAMITANI
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Patent number: 9096945Abstract: A high-quality nitride crystal can be produced efficiently by charging a nitride crystal starting material that contains tertiary particles having a maximum diameter of from 1 to 120 mm and formed through aggregation of secondary particles having a maximum diameter of from 100 to 1000 ?m, in the starting material charging region of a reactor, followed by crystal growth in the presence of a solvent in a supercritical state and/or a subcritical state in the reactor, wherein the nitride crystal starting material is charged in the starting material charging region in a bulk density of from 0.7 to 4.5 g/cm3 for the intended crystal growth.Type: GrantFiled: October 26, 2012Date of Patent: August 4, 2015Assignee: MITSUBISHI CHEMICAL CORPORATIONInventors: Yutaka Mikawa, Hideo Fujisawa, Kazunori Kamada, Hirobumi Nagaoka, Shinichiro Kawabata, Yuji Kagamitani
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Patent number: 8609059Abstract: To provide a production method for a nitride crystal, where a nitride crystal can be prevented from precipitating in a portion other than on a seed crystal and the production efficiency of a gallium nitride single crystal grown on the seed crystal can be enhanced. In a method for producing a nitride crystal by an ammonothermal method in a vessel containing a mineralizer-containing solution, out of the surfaces of said vessel and a member provided in said vessel, at least a part of the portion coming into contact with said solution is constituted by a metal or alloy containing one or more atoms selected from the group consisting of tantalum (Ta), tungsten (W) and titanium (Ti), and has a surface roughness (Ra) of less than 1.80 ?m.Type: GrantFiled: May 29, 2012Date of Patent: December 17, 2013Assignees: Mitsubishi Chemical Corporation, Tohoku University, The Japan Steel Works, Ltd.Inventors: Yutaka Mikawa, Makiko Kiyomi, Yuji Kagamitani, Toru Ishiguro, Yoshihiko Yamamura
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Patent number: 8574532Abstract: A semiconductor crystal is produced through crystal growth in the presence of a solvent in a supercritical and/or subcritical state in a reactor, wherein at least a part of the surface of the reactor and the surface of the member to be used inside the reactor is coated with a platinum group-Group 13 metal alloy coating film.Type: GrantFiled: December 27, 2011Date of Patent: November 5, 2013Assignee: Mitsubishi Chemical CorporationInventors: Hideo Fujisawa, Yutaka Mikawa
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Publication number: 20130108537Abstract: A high-quality nitride crystal can be produced efficiently by charging a nitride crystal starting material that contains tertiary particles having a maximum diameter of from 1 to 120 mm and formed through aggregation of secondary particles having a maximum diameter of from 100 to 1000 ?m, in the starting material charging region of a reactor, followed by crystal growth in the presence of a solvent in a supercritical state and/or a subcritical state in the reactor, wherein the nitride crystal starting material is charged in the starting material charging region in a bulk density of from 0.7 to 4.5 g/cm3 for the intended crystal growth.Type: ApplicationFiled: October 26, 2012Publication date: May 2, 2013Inventors: Yutaka MIKAWA, Hideo FUJISAWA, Kazunori KAMADA, Hirobumi NAGAOKA, Shinichiro KAWABATA, Yuji KAGAMITANI
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Publication number: 20120251431Abstract: A method for producing a nitride crystal, comprising growing a nitride crystal on the surface of a seed crystal put in a reactor while the temperature and the pressure inside the reactor that contains, as put thereinto, a seed crystal having a hexagonal-system crystal structure, a nitrogen-containing solvent, a starting material, and a mineralizing agent containing fluorine and at least one halogen element selected from chlorine, bromine and iodine are so controlled that the solvent therein could be in a supercritical state and/or a subcritical state to thereby grow a nitride crystal on the surface of the seed crystal in the reactor.Type: ApplicationFiled: March 22, 2012Publication date: October 4, 2012Applicant: MITSUBISHI CHEMICAL CORPORATIONInventors: Hideo FUJISAWA, Yutaka Mikawa, Kazunori Kamada
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Publication number: 20120237431Abstract: To provide a production method for a nitride crystal, where a nitride crystal can be prevented from precipitating in a portion other than on a seed crystal and the production efficiency of a gallium nitride single crystal grown on the seed crystal can be enhanced. In a method for producing a nitride crystal by an ammonothermal method in a vessel containing a mineralizer-containing solution, out of the surfaces of said vessel and a member provided in said vessel, at least a part of the portion coming into contact with said solution is constituted by a metal or alloy containing one or more atoms selected from the group consisting of tantalum (Ta), tungsten (W) and titanium (Ti), and has a surface roughness (Ra) of less than 1.80 ?m.Type: ApplicationFiled: May 29, 2012Publication date: September 20, 2012Applicants: MITSUBISHI CHEMICAL CORPORATION, THE JAPAN STEEL WORKS, LTD., TOHOKU UNIVERSITYInventors: YUTAKA MIKAWA, MAKIKO KIYOMI, YUJI KAGAMITANI, TORU ISHIGURO, YOSHIHIKO YAMAMURA
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Publication number: 20120164057Abstract: A semiconductor crystal is produced through crystal growth in the presence of a solvent in a supercritical and/or subcritical state in a reactor, wherein at least a part of the surface of the reactor and the surface of the member to be used inside the reactor is coated with a platinum group-Group 13 metal alloy coating film.Type: ApplicationFiled: December 27, 2011Publication date: June 28, 2012Applicant: MITSUBISHI CHEMICAL CORPORATIONInventors: Hideo FUJISAWA, Yutaka Mikawa
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Publication number: 20120112320Abstract: A production process for a nitride semiconductor crystal, comprising growing a semiconductor layer on a seed substrate to obtain a nitride semiconductor crystal, wherein the seed substrate comprises a plurality of seed substrates made of the same material, at least one of the plurality of seed substrates differs in the off-angle from the other seed substrates, and a single semiconductor layer is grown by disposing the plurality of seed substrates in a semiconductor crystal production apparatus, such that when the single semiconductor layer is grown on the plurality of seed substrates, the off-angle distribution in the single semiconductor layer becomes smaller than the off-angle distribution in the plurality of seed substrates.Type: ApplicationFiled: December 1, 2011Publication date: May 10, 2012Applicant: MITSUBISHI CHEMICAL CORPORATIONInventors: Shuichi KUBO, Kenji Shimoyama, Kazumasa Kiyomi, Kenji Fujito, Yutaka Mikawa