Abstract: A CVD apparatus cleaning method that efficiently removes by-product such as SiO2 or Si3N4 adhered to and deposited on surfaces of an inner wall, an electrode, and the like in a reaction chamber at a film forming step. In the cleaning method the discharged cleaning gas amount is very small, environmental influences such as global warming can be lessened, and cost can be reduced. A CVD apparatus supplying reactive gas into a reaction chamber and forming a deposited film on a surface of a base material provided in the reaction chamber includes an exhaust gas recycling path recycling an exhaust gas reaching the reaction chamber from downstream of a pump on an exhaust path for exhausting a gas from an inner part of the reaction chamber through the pump.

Abstract: Even when a mold part of an IC module is exposed from an opening provided in a substrate of an inlay, occurrence of malfunction, communication disorders or the like of the IC module due to the influence of an external impact or the like is prevented. By combining a sealing member including an insulating layer and an adhesive layer in a stacked manner to a shape covering a mold part of the IC module, occurrence of malfunction, communication disorders or the like of the IC module is prevented even if there is an influence of an external impact or the like. Meanwhile, by providing a sealing member, concentration of stress on the mold part in a line pressure test is alleviated by limiting the size of the sealing member, and also occurrence of cracks in the mold part can be prevented.

Abstract: Disclosed is a fluorine-containing polymer having: (A) a repeating unit derived from a fluorine-containing monomer which is represented by the following formula: CH2?C(—X)—C(?O)—Y—[—(CH2)m—Z—]p—(CH2)n—Rf??(I) (B) a repeating unit derived from a monomer containing no fluorine atom, and if necessary (C) a repeating unit derived from a crosslinkable monomer. This fluorine containing polymer has excellent water repellency, oil repellency and antifouling property.

Abstract: A disk device includes: a front panel; a bottom chassis, including: a bottom plate, having a first end and a second end; and a side plate, formed on the first end, the side plate formed with a first through hole; a connecting member, having a first wall formed with a second through hole and a second wall coupled with the front panel; a hook portion, formed on the first wall so as to extend in a first direction and engaging with the side plate; a screw, fitted into the first through hole and the second through hole thereby coupling the first wall and the side plate; a first engaging member, formed on the side plate; and a second engaging member, formed on the connecting member, and engaging with the first engaging member such that movement thereof in at least the first direction is restricted.

Abstract: Even when a mold part of an IC module is exposed from an opening provided in a substrate of an inlay, occurrence of malfunction, communication disorders or the like of the IC module due to the influence of an external impact or the like is prevented. By combining a sealing member including an insulating layer and an adhesive layer in a stacked manner to a shape covering a mold part of the IC module, occurrence of malfunction, communication disorders or the like of the IC module is prevented even if there is an influence of an external impact or the like. Meanwhile, by providing a sealing member, concentration of stress on the mold part in a line pressure test is alleviated by limiting the size of the sealing member, and also occurrence of cracks in the mold part can be prevented.

Abstract: Fluorine-containing urethanes represented by the general formula: [Rf-A1-Z—X1—OC(?O)NH—]mI[—NHC(?O)O—Y1]n[—NHC(?O)O—(ClCH2—)X2O)a—R1]k ??(1) wherein I is a group derived from a polyisocyanate by removal of the isocyanato groups; Rf is perfluoroalkyl of 1 to 21 carbon atoms; A1 is a direct bond or an organic group of 1 to 21 carbon atoms; Z —SO2—; X1 is a divalent, straight-chain or branched, C1-5 aliphatic group which may have at least one hydroxyl group; X2 is a trivalent, straight-chain or branched, C2-5 aliphatic group; Y1 is a monovalent organic group which is optionally hydroxylated; and R1 is hydrogen or alkyl of 1 to 10 carbon atoms.

Abstract: Disclosed is a surface treating agent containing fluorine-containing polymer having: (A) a repeating unit derived from a fluorine-containing compound which is represented by the following formula: CH2?C(—X)—C(?O)—Y—[—(CH2)m-Z-]p—(CH2)n-Rf??(I) (wherein X is a hydrogen atom or a methyl group), (B) a repeating unit derived from a monomer containing no fluorine atom, if necessary and (C) a repeating unit derived from a crosslinkable monomer, if necessary. This surface treating agent has excellent water repellency, oil repellency and antifouling property.

Abstract: A disk device includes: a front panel; a bottom chassis, including: a bottom plate, having a first end and a second end; and a side plate, formed on the first end, the side plate formed with a first through hole; a connecting member, having a first wall formed with a second through hole and a second wall coupled with the front panel; a hook portion, formed on the first wall so as to extend in a first direction and engaging with the side plate; a screw, fitted into the first through hole and the second through hole thereby coupling the first wall and the side plate; a first engaging member, formed on the side plate; and a second engaging member, formed on the connecting member, and engaging with the first engaging member such that movement thereof in at least the first direction is restricted.

Abstract: Disclosed is a fluorine-containing polymer having: (A) a repeating unit derived from a fluorine-containing monomer which is represented by the following formula: CH2?C(—X)—C(?O)—Y—[—(CH2)m-Z-]p—(CH2)n—Rf??(I) (B) a repeating unit derived from a monomer containing no fluorine atom, and if necessary (C) a repeating unit derived from a crosslinkable monomer. This fluorine containing polymer has excellent water repellency, oil repellency and antifouling property.

Abstract: Disclosed is a fluorine-containing polymer having: (A) a repeating unit derived from a fluorine-containing monomer which is represented by the following formula: CH2?C(—X)—C(?O)—Y—[—(CH2)m-Z-]p—(CH2)n—Rf ??(I) (B) a repeating unit derived from a monomer containing no fluorine atom, and if necessary (C) a repeating unit derived from a crosslinkable monomer. This fluorine containing polymer has excellent water repellency, oil repellency and antifouling property.

Abstract: The process for producing carbonyl fluoride according to the invention is a process for safely and easily producing high-purity carbonyl fluoride having a low content of carbon tetrafluoride, and comprises feeding carbon monoxide and fluorine to a reactor and allowing carbon monoxide to react with fluorine under the conditions of a reactor internal pressure of less than atmospheric pressure.

Abstract: A plasma cleaning gas for CVD chamber is a gas for cleaning silicon-containing deposits on the surface of a CVD chamber inner wall and the surfaces of members placed inside the CVD chamber after film forming treatment on a substrate by a plasma CVD apparatus. The cleaning gas includes 100% by volume of fluorine gas which gas can generate plasma by electric discharge. When 100% by volume of fluorine gas is plasma-generated by electric discharge and then used as a cleaning gas, an extremely excellent etching rate can be attained and further plasma can be stably generated even in the total gas flow rate of 1000 sccm and at a chamber pressure of 400 Pa. Further, the uniformity of cleaning can be also ensured in the above conditions. Additionally the fluorine gas concentration is 100% so that the apparatus is not complicated and thereby the cleaning gas has excellent practicability.

Abstract: Fluorine-containing urethanes represented by the general formula: [Rf-A1-Z-X1—OC(?O)NH—]mI[—NHC(?O)O—Y1]n[—NHC(?O)O—(ClCH2—)X2O)a—R1]k ??(1) wherein I is a group derived from a polyisocyanate by removal of the isocyanato groups; Rf is perfluoroalkyl of 1 to 21 carbon atoms; A1 is a direct bond or an organic group of 1 to 21 carbon atoms; Z is —S— or —SO2—; X1 is a divalent, straight-chain or branched, C1-5 aliphatic group which may have at least one hydroxyl group; X2 is a trivalent, straight-chain or branched, C2-5 aliphatic group; Y1 is a monovalent organic group which is optionally hydroxylated; and R1 is hydrogen or alkyl of 1 to 10 carbon atoms.

Abstract: Disclosed is a fluorine-containing polymer having: (A) a repeating unit derived from a fluorine-containing monomer which is represented by the following formula: CH2?C(-X)-C(?O)-Y-[-(CH2)m-Z-]p-(CH2)n—Rf??(I) (B) a repeating unit derived from a monomer containing no fluorine atom, and if necessary (C) a repeating unit derived from a crosslinkable monomer. This fluorine containing polymer has excellent water repellency, oil repellency and antifouling property.

Abstract: Disclosed is a surface treating agent containing fluorine-containing polymer having: (A) a repeating unit derived from a fluorine-containing compound which is represented by the following formula: CH2?C(—X)—C(?O)—Y—[—(CH2)m-Z-]p—(CH2)n—Rf??(I) ?(wherein X is a hydrogen atom or a methyl group), (B) a repeating unit derived from a monomer containing no fluorine atom, if necessary and (C) a repeating unit derived from a crosslinkable monomer, if necessary. This surface treating agent has excellent water repellency, oil repellency and antifouling property.

Abstract: A chamber-cleaning gas and an etching gas used for a silicon-containing film according to the present invention comprise a perfluoro cyclic ether having 2 to 4 carbon atoms which are ether-linked with carbon atoms. The chamber-cleaning gas and the etching gas hardly generate a harmful waste gas, such as CF4, which is one of the causes for global warming so that they are good for environment. Further, they are a non-toxic gas or a volatile liquid, and are easy to use and are excellent in treatment of waste gas. Additionally, the chamber-cleaning gas of the present invention has an excellent cleaning rate.

Abstract: The process for producing carbonyl fluoride according to the invention is a process for safely and easily producing high-purity carbonyl fluoride having a low content of carbon tetrafluoride, and comprises feeding carbon monoxide and fluorine to a reactor and allowing carbon monoxide to react with fluorine under the conditions of a reactor internal pressure of less than atmospheric pressure.

Abstract: It is an object to provide a cleaning method in a CVD apparatus capable of efficiently removing a by-product such as SiO2 or Si3N4 which is adhered to and deposited on the surfaces of an inner wall, an electrode and the like in a reaction chamber at a film forming step. Furthermore, it is an object to provide a cleaning method in which the amount of a cleaning gas to be discharged is very small, an influence on an environment such as global warming is also lessened and a cost can also be reduced. An energy is applied to a fluorine compound to react the fluorine compound, thereby generating a fluorine gas component and a component other than the fluorine gas component. Furthermore, the fluorine gas component and the component other than the fluorine gas component which are generated are separated from each other so that the fluorine gas component is separated and refined.

Abstract: It is an object to provide a cleaning method in a CVD apparatus capable of efficiently removing a by-product such as SiO2 or Si3N4 which is adhered to and deposited on the surfaces of an inner wall, an electrode and the like in a reaction chamber at a film forming step, in which the amount of a cleaning gas to be discharged is very small, an influence on an environment such as global warming is also lessened and a cost can also be reduced.

Abstract: A chamber-cleaning gas and an etching gas used for a silicon-containing film according to the present invention comprise a perfluoro cyclic ether having 2 to 4 carbon atoms which are ether-linked with carbon atoms. The chamber-cleaning gas and the etching gas hardly generate a harmful waste gas, such as CF4, which is one of the causes for global warming so that they are good for environment. Further, they are a non-toxic gas or a volatile liquid, and are easy to use and are excellent in treatment of waste gas. Additionally, the chamber-cleaning gas of the present invention has an excellent cleaning rate.