Patent number: 6787053
Abstract: The first chamber cleaning gas and the first silicon-containing film-etching gas of the present invention comprise at least one compound selected from the group consisting of FCOF, CF3OCOF and CF3OCF2OCOF, and O2 in the specific amount, and optionally other gases. The second chamber cleaning gas and the second silicon-containing film-etching gas comprise CF3COF, C3F7COF or CF2(COF)2 and O2 in specific amounts, and optionally may comprise other gases. The chamber cleaning gases and silicon-containing film etching gases of the present invention have a low global warming potential and hardly generate substances in the exhaust gases such as CF4, etc, which are harmful to the environment and have been perceived as contributing to global warming. Therefore, the gases are friendly to the global environment, and have easy handling and excellent exhaust gas treating properties. Further, the chamber cleaning gases of the invention have excellent cleaning rate.
Type:
Grant
Filed:
May 13, 2002
Date of Patent:
September 7, 2004
Assignees:
Asahi Glass Company, Limited, Anelva Corporation, Ulvac, Inc., Kanto Denka Kogyo Co., Ltd., Sanyo Electric Co., Ltd., Sony Corporation, Daikin Industries, Ltd., Tokyo Electron Limited, NEC Electronics Corporation, Hitachi Kokusai Electric Inc., Matsushita Electric Industrial Co., Ltd., Renesas Technology Corp.
Inventors:
Akira Sekiya, Yuki Mitsui, Ginjiro Tomizawa, Katsuya Fukae, Yutaka Ohira, Taisuke Yonemura