Abstract: An n-Inp buffer layer, a GRIN-SCH-MQW active layer, and a p-InP spacer layer are laminated on an n-InP substrate. A p-InP blocking layer and an n-InP blocking layer are provided to be adjacent to an upper region of the n-InP buffer layer, the GRIN-SCH-MQW active layer and the p-InP spacer layer. A p-InP cladding layer, a p-GaInAsP contact layer, and a p-side electrode are laminated on the p-InP spacer layer and the n-InP blocking layer, and an n-side electrode is arranged on a rear surface of the n-InP substrate. A diffraction grating that selects light having the number of oscillation longitudinal modes of not less than 10, more preferably not less than 18, oscillation longitudinal modes the difference values of which in optical intensity from the oscillation longitudinal mode having the highest optical intensity are not more than 10 dB, is arranged in the p-InP spacer layer.

Abstract: The present invention has a lower cladding layer, a lower SCH layer, a quantum well layer, an upper SCH layer, and a first upper cladding layer sequentially laminated on a substrate. A striped-pattern second upper cladding layer that has a longitudinal direction in a laser beam emission direction, and a current blocking layer are laminated on the first upper cladding layer. A third upper cladding layer and a contact layer are laminated sequentially on the second upper cladding layer and the current blocking layer respectively. The current blocking layer has a conduction type different from that of the second upper cladding layer. An effective index of an area that includes the current blocking layer is lower than the same of an area that includes the upper cladding layer.

Abstract: An n-InP buffer layer, a GRIN-SCH-MQW active layer, and a p-InP spacer layer are sequentially grown on an n-InP substrate. A p-InP blocking layer and an n-InP blocking layer are grown adjacent to an upper region of the n-InP buffer layer, the GRIN-SCH-MQW active layer, and the p-InP spacer layer. A p-InP cladding layer, a p-GalnAsP contact layer, and a p-side electrode are grown on the p-InP spacer layer and the n-InP blocking layer. An n-side electrode is disposed on a rear surface of the n-InP substrate. A grating is disposed within the p-InP spacer layer. The grating selects a light of which number of longitudinal modes is equal to or more than 2 and equal to or less than 60, each of which has an intensity difference equal to or less than 10 decibels from a maximum intensity.

Abstract: A semiconductor laser module in which an exciting laser beam output is always allowed to be in a multi-mode and the variation of optical output does not occur. In the semiconductor laser module, a semiconductor laser device, light coupling means and an optical fiber are disposed, and further, a light feedback (return) portion where a laser beam of a specific wavelength is reflected is formed, and the reflection spectrum at the light feedback portion has a shape similar to a rectangular one.

Abstract: The present invention provides a semiconductor laser module. A semiconductor laser module (1A) comprising a semiconductor laser element (2a) and an optical fiber (3a) optically coupled by an optical coupling means (2b) is provided, wherein on the optical fiber (3a), a reflective portion (4) and a birefringence fiber (3a) are provided, the birefringence fiber (3a) is provided at least from the incident end on the side of the optical coupling means (2b) to immediately before the reflective portion (4), a connection portion (6) is provided at least at one point in the longitudinal direction of the birefringence fiber (3a), and in the connection portion (6), two eigen axes of X axes and Y axes are connected so that the eigen axes intersect each other at an established angle &thgr;.

Abstract: A vehicle body structure with a head protecting airbag includes a rear pillar garnish having a frame portion disposed in such a manner as to extend along an upper portion of a rear side window glass frame member, and a rear projecting portion projecting upwardly from a rear end of said frame portion to a rear window glass, the rear projecting portion being attached to a vehicle body panel via a clip boss; a roof lining having a side portion and a rear portion disposed so as to overlap a back surface of the frame portion and a back surface of the rear projecting portion, respectively; the head protecting airbag disposed on a back surface of the roof lining; and a supporting bracket attached to a back surface of a vicinity of a rear portion of the roof lining, the supporting bracket being attached to the vehicle body panel.

Abstract: A semiconductor laser module has a Fabry-Perot type semiconductor laser device, an optical fiber, and first and second lenses. The tip of the optical fiber, on which the laser beam falls, is askew polished. The optical fiber is fixed in such a manner that the axis of the optical fiber makes an angle with respect to an optical axis of the laser beam. Coatings that avoid reflection are formed on the tip of the optical fiber, and on the first and second lenses.

Abstract: A semiconductor laser module comprises a semiconductor laser having a front end facet from which output light is emitted, and an optical fiber on which the output light emitted from the semiconductor laser is incident, where the optical fiber has a light feedback portion for reflecting light at a predetermined wavelength. The semiconductor laser is accommodated in a package together with one end side of the optical fiber. The light feedback portion includes a first light feedback portion set at a predetermined reflection center wavelength for determining an oscillating wavelength of the semiconductor laser, and at least one second light feedback portion.

Abstract: A semiconductor laser module in which an exciting laser beam output is always allowed to be in a multi-mode and the variation of optical output does not occur. In the semiconductor laser module, a semiconductor laser device, light coupling means and an optical fiber are disposed, and further, a light feedback (return) portion where a laser beam of a specific wavelength is reflected is formed, and the reflection spectrum at the light feedback portion has a shape similar to a rectangular one.