Patents by Inventor Yutaka Ohmoto
Yutaka Ohmoto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10796890Abstract: There is disclosed a plasma processing apparatus for processing a wafer put on a sample stage disposed in a processing chamber within a vacuum vessel by the use of a plasma generated in the processing chamber after mounting the wafer on the sample stage. The apparatus has heaters in areas of the interior of the sample stage which are divided radially and circumferentially. At least those of the heaters which are arranged in the areas located in the radially outer position include circumferentially arranged heater portions that are connected in series. The amounts of heat generated by these circumferentially arranged heater portions are adjusted.Type: GrantFiled: October 24, 2018Date of Patent: October 6, 2020Assignee: HITACHI HIGH-TECH CORPORATIONInventors: Hironori Kusumoto, Yutaka Ohmoto, Kazunori Nakamoto, Koji Nagai
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Publication number: 20190057846Abstract: There is disclosed a plasma processing apparatus for processing a wafer put on a sample stage disposed in a processing chamber within a vacuum vessel by the use of a plasma generated in the processing chamber after mounting the wafer on the sample stage. The apparatus has heaters in areas of the interior of the sample stage which are divided radially and circumferentially. At least those of the heaters which are arranged in the areas located in the radially outer position include circumferentially arranged heater portions that are connected in series. The amounts of heat generated by these circumferentially arranged heater portions are adjusted.Type: ApplicationFiled: October 24, 2018Publication date: February 21, 2019Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATIONInventors: Hironori Kusumoto, Yutaka Ohmoto, Kazunori Nakamoto, Koji Nagai
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Patent number: 10141165Abstract: There is disclosed a plasma processing apparatus for processing a wafer put on a sample stage disposed in a processing chamber within a vacuum vessel by the use of a plasma generated in the processing chamber after mounting the wafer on the sample stage. The apparatus has heaters in areas of the interior of the sample stage which are divided radially and circumferentially. At least those of the heaters which are arranged in the areas located in the radially outer position include circumferentially arranged heater portions that are connected in series. The amounts of heat generated by these circumferentially arranged heater portions are adjusted.Type: GrantFiled: February 5, 2016Date of Patent: November 27, 2018Assignee: HITACHI HIGH-TECHNOLOGIES CORPORATIONInventors: Hironori Kusumoto, Yutaka Ohmoto, Kazunori Nakamoto, Koji Nagai
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Publication number: 20170025254Abstract: A plasma processing device includes: a processing chamber which is disposed in a vacuum vessel and is compressed; a sample stage which is disposed in the processing chamber and on which a wafer of a process target is disposed and held; and a mechanism for forming plasma in the processing chamber on the sample stage, wherein the sample stage includes a block which is made of a dielectric and has a discoid shape, a jacket which is disposed below the block with a gap therebetween, is made of a metal, and has a discoid shape, a recessed portion which is disposed in a center portion of a top surface of the jacket and into which a cylindrical member disposed below a center portion of the block and made of a dielectric is inserted, and a cooling medium flow channel disposed in the jacket and through which a cooling medium circulates.Type: ApplicationFiled: July 21, 2016Publication date: January 26, 2017Inventors: Takumi TANDOU, Takamasa ICHINO, Kenetsu YOKOGAWA, Yutaka OHMOTO
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Patent number: 9384946Abstract: In a plasma processing apparatus having a processing chamber, a sample stage, a sample, a dielectric-composed insulating film and an electrode, the sample stage can be divided into an upper member and a lower member, the upper member including the insulating film and an electrode, the apparatus includes a socket which is deployed inside a through hole of the upper member, and which is electrically connected to the electrode, a pin which is brought into contact with the socket by being inserted into the socket, and a seal member which is attached onto the socket in order to implement a hermetic sealing between the upper-member side and the lower-member side inside the through hole, the upper-member side being continuously linked to the decompressed processing chamber, the lower-member side being continuously linked to the substantially-atmospheric-pressure side which is the outside of the processing chamber.Type: GrantFiled: March 2, 2012Date of Patent: July 5, 2016Assignee: HITACHI HIGH-TECHNOLOGIES CORPORATIONInventors: Kohei Sato, Kazunori Nakamoto, Yutaka Ohmoto
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Publication number: 20160155617Abstract: There is disclosed a plasma processing apparatus for processing a wafer put on a sample stage disposed in a processing chamber within a vacuum vessel by the use of a plasma generated in the processing chamber after mounting the wafer on the sample stage. The apparatus has heaters in areas of the interior of the sample stage which are divided radially and circumferentially. At least those of the heaters which are arranged in the areas located in the radially outer position include circumferentially arranged heater portions that are connected in series. The amounts of heat generated by these circumferentially arranged heater portions are adjusted.Type: ApplicationFiled: February 5, 2016Publication date: June 2, 2016Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATIONInventors: Hironori Kusumoto, Yutaka Ohmoto, Kazunori Nakamoto, Koji Nagai
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Patent number: 9150967Abstract: A plasma processing apparatus includes a metallic basic material arranged in a sample stage, a dielectric film of dielectric material disposed on an upper surface of the basic material, the dielectric film being formed through a plasma spray process; a film-shaped heater disposed in the dielectric film, the heater being formed through a plasma spray process; an adhesive layer arranged on the dielectric film; a sintered ceramic plate having a thickness ranging from about 0.2 mm to about 0.4 mm, the sintered ceramic plate being adhered onto the dielectric film by the adhesive layer; a sensor disposed in the basic material for sensing a temperature; and a controller for receiving an output from the sensor and adjusting quantity of heat generated by the heater.Type: GrantFiled: August 11, 2010Date of Patent: October 6, 2015Assignee: HITACHI HIGH-TECHNOLOGIES CORPORATIONInventors: Tomoyuki Watanabe, Mamoru Yakushiji, Yutaka Ohmoto
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Publication number: 20140216657Abstract: There is disclosed a plasma processing apparatus for processing a wafer put on a sample stage disposed in a processing chamber within a vacuum vessel by the use of a plasma generated in the processing chamber after mounting the wafer on the sample stage. The apparatus has heaters in areas of the interior of the sample stage which are divided radially and circumferentially. At least those of the heaters which are arranged in the areas located in the radially outer position include circumferentially arranged heater portions that are connected in series. The amounts of heat generated by these circumferentially arranged heater portions are adjusted.Type: ApplicationFiled: March 13, 2013Publication date: August 7, 2014Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATIONInventors: Hironori KUSUMOTO, Yutaka OHMOTO, Kazunori NAKAMOTO, Koji NAGAI
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Publication number: 20130180662Abstract: In a plasma processing apparatus having a processing chamber, a sample stage, a sample, a dielectric-composed insulating film and an electrode, the sample stage can be divided into an upper member and a lower member, the upper member including the insulating film and an electrode, the apparatus includes a socket which is deployed inside a through hole of the upper member, and which is electrically connected to the electrode, a pin which is brought into contact with the socket by being inserted into the socket, and a seal member which is attached onto the socket in order to implement a hermetic sealing between the upper-member side and the lower-member side inside the through hole, the upper-member side being continuously linked to the decompressed processing chamber, the lower-member side being continuously linked to the substantially-atmospheric-pressure side which is the outside of the processing chamber.Type: ApplicationFiled: March 2, 2012Publication date: July 18, 2013Inventors: Kohei Sato, Kazunori Nakamoto, Yutaka Ohmoto
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Patent number: 8282848Abstract: A plasma processing apparatus includes: a film which is made of an insulative material and constructs a surface of a sample stage on which a sample is put; a disk-shaped member whose upper surface is joined with the film in a lower portion of the film and which is made of a heat conductive member; heaters which are arranged in the film and arranged in a center portion and regions of its outer peripheral side of the film; coolant channels which are arranged in the disk-shaped member and in which a coolant for cooling the disk-shaped member flows; a plurality of power sources each of which adjusts an electric power to each of the heaters in the plurality of regions; and a controller which adjusts outputs from the plurality of power sources by using a result obtained by presuming a temperature of the upper surface of the disk-shaped member.Type: GrantFiled: February 28, 2008Date of Patent: October 9, 2012Assignee: Hitachi High-Technologies CorporationInventors: Yutaka Ohmoto, Mamoru Yakushiji, Yutaka Kouzuma, Ken Yoshioka, Tsunehiko Tsubone
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Patent number: 8092637Abstract: A manufacturing method includes steps of: placing a film composed of dielectric, on the top surface of a sample stage, forming a film-like heater on the film made of the dielectric, supplying power to the heater to detect a temperature distribution, adjusting a resistance value of the heater on the basis of a result of detection of a temperature distribution so that the temperature distribution has a predetermined value, and then forming the film composed of the dielectric, on the heater.Type: GrantFiled: February 28, 2008Date of Patent: January 10, 2012Assignee: Hitachi High-Technologies CorporationInventors: Yutaka Kouzuma, Yutaka Ohmoto, Mamoru Yakushiji, Ken Yoshioka, Tsunehiko Tsubone
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Publication number: 20110297082Abstract: A plasma processing apparatus includes a metallic basic material arranged in a sample stage, a dielectric film of dielectric material disposed on an upper surface of the basic material, the dielectric film being formed through a plasma spray process; a film-shaped heater disposed in the dielectric film, the heater being formed through a plasma spray process; an adhesive layer arranged on the dielectric film; a sintered ceramic plate having a thickness ranging from about 0.2 mm to about 0.4 mm, the sintered ceramic plate being adhered onto the dielectric film by the adhesive layer; a sensor disposed in the basic material for sensing a temperature; and a controller for receiving an output from the sensor and adjusting quantity of heat generated by the heater.Type: ApplicationFiled: August 11, 2010Publication date: December 8, 2011Inventors: Tomoyuki Watanabe, Mamoru Yakushiji, Yutaka Ohmoto
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Patent number: 7608162Abstract: A plasma processing apparatus includes a high-frequency power source for applying bias power to an electrode on which a substrate is disposed, an insulating layer formed on a surface of the electrode, a conductive material buried within the insulating layer, a feeder line connecting the high-frequency power source and the conductive material, a variable capacitor provided in the feeder line, and a direct current power source connected to the electrode at a position between the electrode and the high-frequency power source. One portion of the insulating layer where the conductive material is buried formed on an outer part of the electrode has a thickness which is greater than a thickness of another portion of the insulating layer where the conducting material is not buried and which extends from a central part of the electrode to the one portion of the insulating layer.Type: GrantFiled: October 2, 2007Date of Patent: October 27, 2009Assignee: Hitachi, Ltd.Inventors: Yutaka Ohmoto, Hironobu Kawahara, Ken Yoshioka, Kazue Takahashi, Saburou Kanai
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Publication number: 20090218316Abstract: A manufacturing method includes steps of: placing a film composed of dielectric, on the top surface of a sample stage, forming a film-like heater on the film made of the dielectric, supplying power to the heater to detect a temperature distribution, adjusting a resistance value of the heater on the basis of a result of detection of a temperature distribution so that the temperature distribution has a predetermined value, and then forming the film composed of the dielectric, on the heater.Type: ApplicationFiled: February 28, 2008Publication date: September 3, 2009Inventors: Yutaka KOUZUMA, Yutaka Ohmoto, Mamoru Yakushiji, Ken Yoshioka, Tsunehiko Tsubone
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Publication number: 20080280451Abstract: A plasma processing apparatus includes: a film which is made of an insulative material and constructs a surface of a sample stage on which a sample is put; a disk-shaped member whose upper surface is joined with the film in a lower portion of the film and which is made of a heat conductive member; heaters which are arranged in the film and arranged in a center portion and regions of its outer peripheral side of the film; coolant channels which are arranged in the disk-shaped member and in which a coolant for cooling the disk-shaped member flows; a plurality of power sources each of which adjusts an electric power to each of the heaters in the plurality of regions; and a controller which adjusts outputs from the plurality of power sources by using a result obtained by presuming a temperature of the upper surface of the disk-shaped member.Type: ApplicationFiled: February 28, 2008Publication date: November 13, 2008Inventors: Yutaka Ohmoto, Mamoru Yakushiji, Yutaka Kouzuma, Ken Yoshioka, Tsunehiko Tsubone
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Publication number: 20080236614Abstract: A plasma processing apparatus includes a vacuum chamber, a processing chamber housed in the vacuum chamber, and a sample stage located in the processing chamber, for supporting on its upper surface a disk-like sample to be processed, wherein plural disk-like samples are continuously processed with plasma generated in the processing chamber and wherein during the idling time between the successive processes the temperature of the sample stage is adjusted to a predetermined value higher than the temperature at which the samples are processed.Type: ApplicationFiled: February 29, 2008Publication date: October 2, 2008Inventors: Mamoru YAKUSHIJI, Yutaka Ohmoto, Yutaka Kouzuma, Ken Yoshioka
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Publication number: 20080237184Abstract: A plasma processing apparatus comprising a vacuum vessel; a process chamber housed in the vacuum vessel; and a sample stage located in the process chamber, for supporting on its upper surface a disk-like sample to be processed; wherein plural disk-like samples are continuously processed with plasma generated in the process chamber and wherein during the idling time between the successive processes the temperature of the sample stage is adjusted to a predetermined value higher than the temperature at which the samples are processed.Type: ApplicationFiled: August 29, 2007Publication date: October 2, 2008Inventors: MAMORU YAKUSHIJI, Yutaka Ohmoto, Yutaka Kouzuma
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Patent number: 7396481Abstract: This invention relates to a method for etching an organic insulating film used in the production of semiconductor devices. A sample to be etched on which a low dielectric constant organic insulating film is formed is etched by generating a plasma from hydrogen gas and nitrogen gas or ammonia gas, and controlling the gas flow rate and pressure so that the light emission spectral intensity ratio of hydrogen atom and cyan molecule in the plasma comes to a prescribed value. By this method, a low dielectric constant organic insulating film as an insulating film between layers can be etched without using any etch stop layer so that bottom surfaces of trenches and holes for electrical wiring become flat.Type: GrantFiled: August 23, 2005Date of Patent: July 8, 2008Assignee: Hitachi, Ltd.Inventors: Michinobu Mizumura, Ryooji Fukuyama, Yutaka Ohmoto, Katsuya Watanabe
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Publication number: 20080023145Abstract: A plasma processing apparatus includes a high-frequency power source for applying bias power to an electrode on which a substrate is disposed, an insulating layer formed on a surface of the electrode, a conductive material buried within the insulating layer, a feeder line connecting the high-frequency power source and the conductive material, a variable capacitor provided in the feeder line, and a direct current power source connected to the electrode at a position between the electrode and the high-frequency power source. One portion of the insulating layer where the conductive material is buried formed on an outer part of the electrode has a thickness which is greater than a thickness of another portion of the insulating layer where the conducting material is not buried and which extends from a central part of the electrode to the one portion of the insulating layer.Type: ApplicationFiled: October 2, 2007Publication date: January 31, 2008Inventors: Yutaka Ohmoto, Hironobu Kawahara, Ken Yoshioka, Kazue Takahashi, Saburou Kanai
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Patent number: 7288166Abstract: A plasma processing apparatus for manufacturing a semiconductor device includes an apparatus for applying bias powers to a substrate to be processed and a material adjacent to the substrate, an apparatus for adjusting a feeding impedance for the bias power applied to the material, and an apparatus for adjusting feeding impedances for the bias powers to a plurality of positions on the substrate so as to make electrons projected to the substrate from the plasma uniform within a surface of the substrate.Type: GrantFiled: September 17, 2003Date of Patent: October 30, 2007Assignee: Hitachi, Ltd.Inventors: Yutaka Ohmoto, Hironobu Kawahara, Ken Yoshioka, Kazue Takahashi, Saburou Kanai