Abstract: A semiconductor device using an oxide semiconductor is provided with stable electric characteristics to improve the reliability. In a manufacturing process of a transistor including an oxide semiconductor film, an oxide semiconductor film containing a crystal having a c-axis which is substantially perpendicular to a top surface thereof (also called a first crystalline oxide semiconductor film) is formed; oxygen is added to the oxide semiconductor film to amorphize at least part of the oxide semiconductor film, so that an amorphous oxide semiconductor film containing an excess of oxygen is formed; an aluminum oxide film is formed over the amorphous oxide semiconductor film; and heat treatment is performed thereon to crystallize at least part of the amorphous oxide semiconductor film, so that an oxide semiconductor film containing a crystal having a c-axis which is substantially perpendicular to a top surface thereof (also called a second crystalline oxide semiconductor film) is formed.

Abstract: Experience shows that, in a material containing oxygen as a main component, an excess or deficiency of trace amounts of oxygen with respect to a stoichiometric composition, or the like affects properties of the material. An oxygen diffusion evaluation method of an oxide film stacked body includes the steps of: measuring a quantitative value of one of oxygen isotopes of a substrate including a first oxide film and a second oxide film which has an existence proportion of an oxygen isotope different from an existence proportion of an oxygen isotope in the first oxide film in a depth direction, by secondary ion mass spectrometry; and evaluating the one of the oxygen isotopes diffused from the first oxide film to the second oxide film.

Abstract: It is an object to manufacture a semiconductor device in which a transistor including an oxide semiconductor has normally-off characteristics, small fluctuation in electric characteristics, and high reliability. First, first heat treatment is performed on a substrate, a base insulating layer is formed over the substrate, an oxide semiconductor layer is formed over the base insulating layer, and the step of performing the first heat treatment to the step of forming the oxide semiconductor layer are performed without exposure to the air. Next, after the oxide semiconductor layer is formed, second heat treatment is performed. An insulating layer from which oxygen is released by heating is used as the base insulating layer.

Abstract: An object is to realize high performance and low power consumption in a semiconductor device having an SOI structure. In addition, another object is to provide a semiconductor device having a high performance semiconductor element which is more highly integrated. A semiconductor device is such that a plurality of n-channel field-effect transistors and p-channel field-effect transistors are stacked with an interlayer insulating layer interposed therebetween over a substrate having an insulating surface. By controlling a distortion caused to a semiconductor layer due to an insulating film having a stress, a plane orientation of the semiconductor layer, and a crystal axis in a channel length direction, difference in mobility between the n-channel field-effect transistor and the p-channel field-effect transistor can be reduced, whereby current driving capabilities and response speeds of the n-channel field-effect transistor and the p-channel field-effect can be comparable.

Abstract: A separation layer is formed over a substrate, an insulating film 107 is formed over the separation layer, a bottom gate insulating film 103 is formed over the insulating film 107, an amorphous semiconductor film is formed over the bottom gate insulating film 103, the amorphous semiconductor film is crystallized to form a crystalline semiconductor film over the bottom gate insulating film 103, a top gate insulating film 105 is formed over the crystalline semiconductor film, top gate electrodes 106a and 106b are formed over the top gate insulating film 105, the separation layer is separated from the insulating film 107, the insulating film 107 is processed to expose the bottom gate insulating film 103, and bottom gate electrodes 115a and 115b in contact with exposed the gate insulating film 103 are formed.

Abstract: An object is to realize high performance and low power consumption in a semiconductor device having an SOI structure. In addition, another object is to provide a semiconductor device having a high performance semiconductor element which is more highly integrated. A semiconductor device is such that a plurality of n-channel field-effect transistors and p-channel field-effect transistors are stacked with an interlayer insulating layer interposed therebetween over a substrate having an insulating surface. By controlling a distortion caused to a semiconductor layer due to an insulating film having a stress, a plane orientation of the semiconductor layer, and a crystal axis in a channel length direction, difference in mobility between the n-channel field-effect transistor and the p-channel field-effect transistor can be reduced, whereby current driving capabilities and response speeds of the n-channel field-effect transistor and the p-channel field-effect can be comparable.

Abstract: A separation layer is formed over a substrate, an insulating film 107 is formed over the separation layer, a bottom gate insulating film 103 is formed over the insulating film 107, an amorphous semiconductor film is formed over the bottom gate insulating film 103, the amorphous semiconductor film is crystallized to form a crystalline semiconductor film over the bottom gate insulating film 103, a top gate insulating film 105 is formed over the crystalline semiconductor film, top gate electrodes 106a and 106b are formed over the top gate insulating film 105, the separation layer is separated from the insulating film 107, the insulating film 107 is processed to expose the bottom gate insulating film 103, and bottom gate electrodes 115a and 115b in contact with exposed the gate insulating film 103 are formed.

Abstract: A semiconductor device is demonstrated in which a plurality of field-effect transistors is stacked with an interlayer insulating layer interposed therebetween over a substrate having an insulating surface. Each of the plurality of filed-effect transistors has a semiconductor layer which is prepared by a process including separation of the semiconductor layer from a semiconductor substrate followed by bonding thereof over the substrate. Each of the plurality of field-effect transistors is covered with an insulating film which provides distortion of the semiconductor layer. Furthermore, the crystal axis of the semiconductor layer, which is parallel to the crystal plane thereof, is set to a channel length direction of the semiconductor layer, which enables production of the semiconductor device with high performance and low power consumption having an SOI structure.

Abstract: A vehicle-mountable sun visor includes: a shaft of which one end is mounted on a vehicle body; a support, which is mounted on the shaft; a sun visor body in which two resin core members are coupled with each other by a hinged portion and the two resin core members are folded with the hinged portion being a fold so as to involve the other end of the shaft and the support; a first slide guide, which is provided in proximity to the hinged portion, for guiding sliding of the support; and a second slide guide, which is provided on an internal face of one of the two resin core members, for guiding sliding of the support. The support is slidably held in a space surrounded by the folded two resin core members, the first slide guide, and the second slide guide. The support turns around the shaft, and the sun visor body thereby turns. The support slides along the two resin core members, the first slide guide, and the second slide guide, and the sun visor body thereby slides relative to the shaft.

Abstract: To provide an evaporation container and a vapor deposition apparatus in which vapor deposition can be performed stably with use of an evaporation container formed of an inexpensive material being easily processed without clogging the material. The side surface of a lid for the evaporation container is provided with an accordion-shaped structure. The lid of the evaporation container is made larger than an opening of an evaporation source such that the lid is directly contacted to a heating portion. According to the structure, the periphery of the opening for the lid is not easily cooled downs and therefore the variation in temperature between the body and the lid of the container is hardly generated. Consequently, an evaporated material hardly clog at the opening, vapor deposition can be stably performed for a long time, thereby increasing productivity.

Abstract: A vehicle-mountable sun visor includes: a shaft of which one end is mounted on a vehicle body; a support, which is mounted on the shaft; a sun visor body in which two resin core members are coupled with each other by a hinged portion and the two resin core members are folded with the hinged portion being a fold so as to involve the other end of the shaft and the support; a first slide guide, which is provided in proximity to the hinged portion, for guiding sliding of the support; and a second slide guide, which is provided on an internal face of one of the two resin core members, for guiding sliding of the support. The support is slidably held in a space surrounded by the folded two resin core members, the first slide guide, and the second slide guide. The support turns around the shaft, and the sun visor body thereby turns. The support slides along the two resin core members, the first slide guide, and the second slide guide, and the sun visor body thereby slides relative to the shaft.

Abstract: A coming-off preventing contacting piece 6 that extendingly projects in the radial direction of a shaft 3 throughout the entire periphery is formed in an insertion-side part 3a of the shaft 3 that turnably supports a sun visor body 1, and a contacted piece 7 with which the coming-off preventing contacting piece 6 contactingly engages is formed on the sun visor body 1 side to prevent the sun visor body 1 from coming off the shaft 3. Thereby, even if the sun visor body 1 receives a high expandingly deploying force of a curtain airbag, the concentrated load per unit area applied to the coming-off preventing contacting piece 6 is kept low, and therefore the coming-off preventing contacting piece 6 is restrained from being broken.

Abstract: A semiconductor device is demonstrated in which a plurality of field-effect transistors is stacked with an interlayer insulating layer interposed therebetween over a substrate having an insulating surface. Each of the plurality of filed-effect transistors has a semiconductor layer which is prepared by a process including separation of the semiconductor layer from a semiconductor substrate followed by bonding thereof over the substrate. Each of the plurality of field-effect transistors is covered with an insulating film which provides distortion of the semiconductor layer. Furthermore, the crystal axis of the semiconductor layer, which is parallel to the crystal plane thereof, is set to a channel length direction of the semiconductor layer, which enables production of the semiconductor device with high performance and low power consumption having an SOI structure.

Abstract: An object is to realize high performance and low power consumption in a semiconductor device having an SOI structure. In addition, another object is to provide a semiconductor device having a high performance semiconductor element which is more highly integrated. A semiconductor device is such that a plurality of n-channel field-effect transistors and p-channel field-effect transistors are stacked with an interlayer insulating layer interposed therebetween over a substrate having an insulating surface. By controlling a distortion caused to a semiconductor layer due to an insulating film having a stress, a plane orientation of the semiconductor layer, and a crystal axis in a channel length direction, difference in mobility between the n-channel field-effect transistor and the p-channel field-effect transistor can be reduced, whereby current driving capabilities and response speeds of the n-channel field-effect transistor and the p-channel field-effect can be comparable.

Abstract: A separation layer is formed over a substrate, an insulating film 107 is formed over the separation layer, a bottom gate insulating film 103 is formed over the insulating film 107, an amorphous semiconductor film is formed over the bottom gate insulating film 103, the amorphous semiconductor film is crystallized to form a crystalline semiconductor film over the bottom gate insulating film 103, a top gate insulating film 105 is formed over the crystalline semiconductor film, top gate electrodes 106a and 106b are formed over the top gate insulating film 105, the separation layer is separated from the insulating film 107, the insulating film 107 is processed to expose the bottom gate insulating film 103, and bottom gate electrodes 115a and 115b in contact with exposed the gate insulating film 103 are formed.

Abstract: A focal plane shutter apparatus is constructed by a light shielding blade, a fitting pin attached to the blade and an arm which is slidably engaged with the fitting pin to open or close the blade. A surface hardness of the fitting pin is higher than that of the arm. Concretely, the surface hardness of the arm is Hv300 to 600, and the surface hardness of the fitting pin is Hv450 to 1000. The arm and the fitting pin are subjected to chemical polishing treatment. Furthermore, the fitting pin is plated with nickel, chromium, palladium or rhodium. The fitting pin and arm have a substantially equal material hardness, or the material hardness of the fitting pin is higher. As the case may be, the fitting pin or arm may be plated with gold. Such an arrangement can suppress generation and accumulation of abrasion powder in the focal plane shutter apparatus assembled into a digital camera.

Abstract: An antenna device (60) is provided that is used in a recorder and/or writer destined for writing and reading data to and from a contactless IC card (1). The antenna device (60) includes a loop coil (61) that radiates a magnetic field, magnetically couples with a loop coil (4) provided in the IC card (1), and sends and receives data to and from the IC card (1). The loop coil (61) is formed asymmetric for the winding sections thereof opposite to each other across the center of the loop coil (61) to be different in interval from each other.

Abstract: An antenna apparatus (60) is provided which is used in a recorder and/or player to write and read data to and from a contactless IC card (1). The antenna apparatus (60) includes a loop coil (61) to radiate an electromagnetic field for magnetic coupling with a loop coil (4) at the IC card (1) to send and receive data to and from the IC card (1), and a magnetic sheet (62) disposed to face the main side of the loop coil (61), opposite to the main side facing the IC card (1). The magnetic sheet (62) has the specific permeability ?? and product Ms·t of saturation magnetization Ms and thickness t thereof set in accordance with a necessary range of communications with the contactless IC card (1).

Abstract: A recording apparatus of a tape-shaped magnetic recording medium includes a transfer unit, a recording head, a signal-processing unit and a control unit. The transfer unit transfers a tape-shaped magnetic recording medium having an anisotropic property oblique with respect to the thickness direction in a forward or reversed direction. The recording head is positioned in such a way that a recording track is formed on the traveling tape-shaped magnetic recording medium, which is transferred by the transfer unit, in a direction parallel to the transfer direction of the tape-shaped magnetic recording medium. Connected to the recording head, the signal-processing unit receives a signal to be recorded onto the tape-shaped magnetic recording medium. The signal-processing unit then carries out signal processing required for an operation to write the signal to be recorded onto the tape-shaped magnetic recording medium.

Abstract: A focal plane shutter has a light shielding shutter blade. A blade dowel is attached to the shutter blade. A blade arm is slidably engaged with the blade dowel to open or close the shutter blade. A surface hardness of the blade dowel is higher than a surface hardness of the blade arm. The surface hardness of the blade arm is Hv300 to 900, and the surface hardness of the blade dowel is Hv450 to 1000. The blade arm and the blade dowel are subjected to chemical polishing treatment. The blade dowel is plated with nickel, chromium, palladium or rhodium. A material of the blade dowel is a free-cutting stainless steel or a carbon tool steel, and a material of the blade arm is a carbon tool steel or a titanium material.