Abstract: A method of differentiating each of a set of prints of a document is presented. A start command that instructs start of printing of one set of prints is sent to a printer. The printer prints the one set of the prints on, for example, a paper. Once the printing of the one set of the prints is over, an end command that instructs end of the printing is sent to the printer. Printing of a next set of prints can be started after this.

Abstract: Compounds having immunosuppressive activity, cell growth inhibitory activity, anti-tumor activity, etc.

Abstract: LK6-A derivatives which have immmunosuppressive activity, cell growth inhibitory activity, anti-tumor activity, etc. and which are represented by general formula (I): as defined herein, and pharmaceutically acceptable salts thereof.

Abstract: A MISFET is provided with a segmented channel comprising regions in which the channel is inverted by a first gate voltage and regions in which the channel is inverted by a second gate voltage. The MISFET is formed in a semiconductor substrate having a first conductivity type and the first inversion region of the channel has a first impurity concentration determined by the surface concentration of the substrate. The second inversion region of the channel has a second impurity concentration determined by doping an impurity to the region selected by a photolithographic process. The first and second inversion regions may be divided into a plurality of plane shapes and the threshold voltage of the MISFET is set to a desired value in accordance with the plane area ratio of the first and second inversion regions.

Abstract: To provide a power supply apparatus that replaces a dry battery by detecting electric field energy in a free space, rectifying the energy, extracting the energy as electric power, and accumulating the electric power. In particular, there is provided a power supply apparatus that is useful for a portable electronic equipment. An electromagnetic energy conversion unit collects a radio wave propagating in the air and converts collected electromagnetic energy into electric power. A rectifying unit generates electric power having a DC waveform by rectifying electric power having an AC waveform and charges the rectified electric power having the DC waveform into a secondary battery. An electric load is supplied with the rectified electric power having the DC waveform or with electric power having a DC waveform discharged from the secondary battery.

Abstract: A MOS-type capacitor includes a semiconductor substrate of a first conductive type serving as a first electrode, a conductor layer formed on the semiconductor substrate via a capacitive insulation film and serving as a second electrode, and an impurity region of a second conductive type formed in the vicinity of the surface of the semiconductor substrate at a location in proximity to a region facing the conductor layer. The MOS-type capacitor is used as a variable capacitor in a VCO (voltage-controlled oscillator) having a widened frequency range.

Abstract: In a MISFET, areas where a channel surface of a channel region is inverted by a first gate voltage and areas where the channel surface is inverted by a second gate voltage are provided in the channel region of the MISFET in plane as components thereof. The channel region 104 having a first impurity concentration determined by a surface concentration of a P-type semiconductor substrate and a channel region 105 having a second impurity concentration determined by doping an impurity to the region selected by a pattern 106 of a mask for doping impurity by ion implantation and others are provided in a channel region of an N-type MOSFET on the P-type semiconductor substrate. The channel region 104 having the first impurity concentration and the channel region 105 having the second impurity concentration are divided into a plurality of plane shapes.

Abstract: A semiconductor device comprises a depletion-type NMOS transistor having a source region, a drain region connected to a power supply line, and a gate electrode connected to a ground line. An enhancement-type NMOS transistor has a source connected to the ground line, a drain connected in series with the source of the depletion-type MOS transistor between the power supply line and the ground line to define an output terminal, and a gate electrode connected directly to the output terminal.

Abstract: A process for producing a semiconductor device comprises heat-treating an oxygen-containing silicon substrate in an inert atmosphere to change a concentration of oxygen contained in the silicon substrate to within a range of 5×1017/cm3 to 10×1017/cm3, and heat treating the silicon substrate in an oxidative atmosphere to form a silicon oxide film.

Abstract: A semiconductor acceleration sensor comprises a cantilever structure formed from a semiconductor wafer and having a first surface for receiving an acceleration force, a second surface disposed generally orthogonal to the first surface, and strain sensing portions disposed on the second surface. A supporting body supports the cantilever structure. A plurality of bridge circuits are disposed on the second surface of the rectangular parallelepiped shaped structure. Each of the bridge circuits has a plurality of the strain sensing portions.

Abstract: A method of manufacturing a semiconductor acceleration sensor comprises forming a strain sensing section on a surface of a semiconductor wafer, fixing the semiconductor wafer to a cooled fixing stage, cutting out a structural body having the strain sensing section from the semiconductor wafer, and connecting a support member to the structural body cut from the semiconductor wafer.

Abstract: A solid-state radiation detecting device comprises an insulation layer having a pair of opposed surfaces. First and second single crystal silicon semiconductors are disposed on respective ones of the opposed surfaces of the insulating layer. A photoelectric conversion element is disposed on the first single crystal silicon semiconductor. A signal processing circuit having a charge transfer device is disposed on the second single crystal silicon semiconductor.

Abstract: The present invention relates to an electrophotographic toner containing a binder resin having an acid value in the range of from 0.1 to 50 and a novel compound of zirconium complex or salt useful as a charge control agent for the electrophotographic toner.

Abstract: An improvement of a resistance to electrostatic discharge of a semiconductor integrated circuit device is aimed. An IC having a high ESD immunity is realized by causing a surface concentration of N type impurities in a drain area of an N-channel type MOS transistor to be more than 5 E 18/cm.sup.3 in maximum in the direction of gate electrode of a gate electrode terminal and to have a monotonous concentration profile in which there is no kink in a portion less than 5 E 18/cm.sup.3 in the surface direction.

Abstract: A semiconductor acceleration sensor comprises a base having a first surface for receiving an acceleration force and a second surface disposed generally perpendicular to the first surface. A first detector is disposed on the second surface of the base for detecting an acceleration force in a horizontal direction of the base. A second detector is disposed on the second surface of the base for detecting an acceleration force in a vertical direction of the base. A support member is connected to one end of the base for supporting and fixing the base.

Abstract: An IC is configured by using a circuit form comprising a CMOS and also a new current inverter element, thereby to reduce current consumption of ICs having a function of converting an output from a photodiode or the like to a voltage and a function of amplifying the output.

Abstract: A resistor ladder network may be formed with a reduced space on a semiconductor substrate by patterning a plurality of layers of resistive polycrystalline silicon films spaced by insulating layers. Such a device includes a first insulating film formed on a semiconductor substrate, one or more serial-connected first resistors formed in a first polycrystalline silicon film provided on the semiconductor substrate via the first insulating film, a second insulating film provided on the first polycrystalline silicon film, one or more series-connected second resistors formed in a second polycrystalline silicon film provided apart from the first polycrystalline silicon film via the second insulating film, the second polycrystalline silicon film being connected to the first polycrystalline silicon film. A third insulating film is provided over the second polycrystalline silicon film, and metal wires provided on a surface of the second polycrystalline silicon film via contact holes formed in the third insulating film.

Abstract: A semiconductor acceleration sensor comprises a sensor element having a first surface for receiving an acceleration force and second opposite surfaces disposed generally perpendicular to the first surface, a support for supporting and fixing the sensor element, and a detecting device disposed on the second opposite surfaces of the sensor element for detecting a variation of a physical quantity due to an acceleration force applied to the first surface of the sensor element.

Abstract: A semiconductor device comprises a semiconductor acceleration sensor having a cantilever made of a semiconductor material, a supporter for supporting the cantilever, and diffused resistors disposed on the cantilever. An acceleration detecting device detects a displacement of the cantilever based on acceleration forces applied to the cantilever and on changes of resistance values of the diffused resistors.

Abstract: A method of manufacturing a semiconductor detector for detecting light and radiation comprises the steps of providing a first semiconductor substrate of a first conductivity type, attaching a second substrate to the first semiconductor substrate through an insulating film, grinding the first semiconductor substrate from a surface thereof to a predetermined thickness, forming a MOS transistor on the ground surface of the first semiconductor substrate, removing the second substrate, and forming electrodes on the first semiconductor substrate for forming a depletion layer.