Abstract: The present invention relates to radicicol derivatives represented by the following formula (I) or pharmacologically acceptable salts thereof: ##STR1## wherein R.sup.1 and R.sup.2 are the same or different and each represents hydrogen, alkanoyl, alkenoyl or tert-butyldimethylsilyl; (1) when X represents halogen, Y represents an oxygen atom or R.sup.4 --O--N (wherein R.sup.4 represents hydrogen or substituted or unsubstituted lower alkyl); and R.sup.3 represents hydrogen, alkanoyl, alkenoyl or the like; and (2) when X and R.sup.3 are combined with each other to represent a single bond; Y represents R.sup.4B --O--N (wherein R.sup.4B has the same meaning as R.sup.4). The radicicol derivatives of the present invention demonstrate tyrosine kinase inhibition activity and pharmacological activities such as antitumor, antimicrobial or immunosuppression effects.

Abstract: An electronic apparatus that performs switching with the use of a piezoelectric element comprises a piezoelectric element 11, a first monitor electrode 15, and a second monitor electrode 16, the latter two being provided thereon and intended to output electric shock signals that are generated when a shock has been applied to the piezoelectric element 11 to thereby distort it. Whereby, a shock is applied to the electronic apparatus that contains the piezoelectric element 11 and a shock is applied to the built-in piezoelectric element 11. This makes it possible to output for the purpose of controlling the operation of the respective functions an electronic shock signal that is generated when the piezoelectric element 11 is distorted. As a result, it is possible to reduce the number of switch parts for, and hence the size of, the electronic apparatus and reduce the amount of time and labor for performing the switching operation by utilizing the piezoelectric effect of the piezoelectric element.

Abstract: A semiconductor device comprises a reference voltage device for outputting a constant voltage, a voltage dividing device receptive of the constant voltage for dividing the constant voltage and outputting different currents, a digital signal processing device receptive of the different currents outputted by the voltage dividing device and outputting voltages, and a voltage amplifying device receptive of at least a ground voltage and one of the voltages outputted by the digital signal processing device and outputting a signal produced by amplifying the voltage of the digital signal processing device.

Abstract: The present invention relates to a farnesyltransferase inhibitor and an antitumor agent comprising, as an active ingredient, a piperazinedione derivative represented by formula (I): ##STR1## wherein R.sup.1 and R.sup.2 independently represent lower alkyl, lower alkoxyalkyl, substituted or unsubstituted aryl, or aralkyl; R.sup.3 and R.sup.4 independently represent mercapto, lower alkanoylthio, aroylthio, lower alkoxycarbonylthio, or aryloxycarbonylthio, or alternatively R.sup.3 and R.sup.4 are combined together to form disulfide; and R.sup.5 and R.sup.6 independently represent hydrogen, lower alkyl, lower alkoxyalkyl, hydroxyalkyl, lower alkanoyloxyalkyl, aroyloxyalkyl, aralkyloxyalkyl, or aralkyl.

Abstract: A semiconductor integrated circuit device comprises at least two MISFETs formed on a semiconductor substrate and connected in series in a diode connection. Each of the MISFETs has a source, a drain, a channel extending between the source and the drain, and a gate disposed over the channel through a gate insulating film. One of the MISFETs has a first threshold voltage, and the other of the MISFETs has a second threshold voltage lower than the first threshold voltage. A portion of the channel of the semiconductor substrate of each of the MISFETs has an impurity concentration equal to or less than 6.times.10.sup.14 atoms/cc.

Abstract: A semiconductor device comprises a semiconductor acceleration sensor having a cuboid-shaped cantilever cut from a semiconductor wafer, a detecting device disposed on the cantilever for detecting a displacement of the cantilever due to an acceleration force applied to the cantilever, and a supporter for supporting and fixing the cantilever at one end thereof.

Abstract: The present invention relates to a novel compound EI-2128-1 having IL-1 production inhibitory activity which is represented by formula (I): ##STR1##

Abstract: A semiconductor radiation-detecting device enabling detection of radiation in different energy range. A large number of PIN diodes are laminated one over another with a spacer consisting of an insulator being interposed between each adjacent two of the laminate, whereby radiation is incident in a direction perpendicular to the wider surface of the PIN diode.

Abstract: Provided is an Interleukin-1 production inhibiting compound represented by formula (I) ##STR1## wherein R denotes 4-methyl-1-pentenyl, 5-methyl-1,3-heptadienyl or 1-methylpentanyl.

Abstract: A process for producing a disaccharide which comprises: conducting the condensation reaction of .beta.-glucose-1-phosphate with a monosaccharide in an aqueous medium in the presence of an enzyme source which is derived from a microorganism belonging to the genus Catellatospora, Kineosporia, Propionibacterium, or Enterococcus and which has sugar phosphorylase activity; and recovering the disaccharide formed in the aqueous medium, as well as a novel disaccharide obtained by the process. The disaccharide obtained by the present invention is useful as a stabilizer for medicine, food, cosmetic and enzyme.

Abstract: An avalanche photodiode for detecting x-rays and other radiation comprises a first substrate having a portion removed therefrom, a first insulating film formed on the first substrate, a second substrate comprising a floating zone silicon semiconductor substrate disposed on the first insulating film, an impurity region selectively formed in the second substrate at a surface corresponding to the removed portion, a PN junction formed on the second substrate, a glass substrate mounted to the second substrate, a first electrode formed on the first substrate for applying a voltage to the impurity region, a second electrode formed on the second substrate for applying a voltage to the second substrate, a third electrode formed on the glass substrate and electrically connected to the second electrode, and an integrated circuit package having a lead pin connected to the third electrode. Accordingly, a shallow depletion layer may be provided on a floating zone SOI substrate.

Abstract: A novel photoelectric conversion semiconductor device having an amplifying function which can be readily fabricated is provided. An N.sup.+ -type impurity domain whose impurity concentration is higher than that of an N.sup.- -type semiconductor substrate is formed on one surface thereof and a P.sup.+ -type impurity domain is formed on the opposite surface. An SiO.sub.2 film, an Si.sub.3 N.sub.4 film and an SiO.sub.2 film are formed extending to the domain of the N.sup.- -type semiconductor substrate, exceeding the N.sup.+ -type impurity domain. An anode electrode is formed on the N.sup.+ -type impurity domain and a cathode electrode is formed on the P.sup.+ -type impurity domain. A polysilicon gate electrode is formed on the SiO.sub.2 film, i.e. the top layer, and an Al gate electrode is formed thereon. A reverse voltage is applied between the anode electrode and the cathode electrode and a predetermined voltage is applied between the anode electrode and the Al gate electrode.

Abstract: DC107 derivatives represented by the formula (I): ##STR1## or pharmacologically acceptable slats thereof, ?wherein R.sup.1 is hydrogen, lower alkoxyalkyl, aralkyloxyalkyl, lower alkoxyalkoxyalkyl, lower alkoxyalkoxyalkoxyalkyl, aralkyl, tetrahydropyranyl, COR.sup.4 or the like; R.sup.2 represents hydrogen or COR.sup.5 ; R.sup.3 represents lower alkyl, lower alkenyl, aralkyl which may be substituted with substituted or unsubstituted aryl, lower alkoxyalkyl, aralkyloxyalkyl, substituted or unsubstituted aryloxyalkyl, lower alkoxycarbonylalkyl, lower alkanoyloxyalkyl, alicyclic alkanoyloxyalkyl or the like, or bonds to Y to represent a single bond; Y bonds to R.sup.3 to represent a single bond, or bonds to Z to represent a single bond; Z represents hydrogen or bonds to Y to represent a single bond; W represents oxygen or NR.sup.6, with the proviso that the compound wherein R.sup.1, R.sup.2 and Z each represents hydrogen, R.sup.3 bonds to Y to represent a single bond, and W represents oxygen (DC107) is excluded.

Abstract: Described herein is a pyrrolocarbazole derivative and a pharmaceutically acceptable salt thereof having the following formula (I): ##STR1## wherein R.sup.1 is lower alkyl or aralkyl; R.sup.2 is hydrogen, substituted or unsubstituted lower alkyl, lower alkenyl, or substituted or unsubstituted aralkyl; R.sup.3, R.sup.4, R.sup.5, R.sup.6 and R.sup.7 may be the same or different, and are hydrogen, halogen, nitro, substituted or unsubstituted lower alkanoyl, NR.sup.9 R.sup.10, or OR.sup.11 ; R.sup.8 is hydrogen or is combined with R.sup.3 to form --CONR.sup.12 --; and when R.sup.1 is benzyl; R.sup.2, R.sup.3, R.sup.4, R.sup.5, R.sup.6, R.sup.7 and R.sup.8 are not simultaneously hydrogen. A compound of the present invention stimulates platelet production and is useful for treatment of thrombocytopenia.

Abstract: The present invention relates to a farnesyltransferase inhibitor and an antitumor agent comprising, as an active ingredient, a piperazinedione derivative represented by formula (I): ##STR1## wherein R.sup.1 and R.sup.2 independently represent lower alkyl, lower alkoxyalkyl, substituted or unsubstituted aryl, or aralkyl; R.sup.3 and R.sup.4 independently represent mercapto, lower alkanoylthio, aroylthio, lower alkoxycarbonylthio, or aryloxycarbonylthio, or alternatively R.sup.3 and R.sup.4 are combined together to form disulfide; and R.sup.5 and R.sup.6 independently represent hydrogen, lower alkyl, lower alkoxyalkyl, hydroxyalkyl, lower alkanoyloxyalkyl, aroyloxyalkyl, aralkyloxyalkyl, or aralkyl.

Abstract: A semiconductor integrated circuit device comprises an input terminal for inputting a voltage, an output terminal for outputting a voltage, a MOS driver disposed between the input terminal and the output terminal for adjusting the voltage of the input terminal and transmitting it to the output terminal, and a MOS control circuit for controlling the MOS driver and feeding back voltage information of the output terminal. Each of the MOS driver and the MOS control circuit has a MOS transistor formed on a semiconductor substrate, and each MOS transistor has a source region, a drain region, a channel region disposed between the source region and the drain region, a gate insulating film disposed over the channel region, and a gate electrode disposed over the gate insulating film. The gate insulating films of the MOS transistors have different film thicknesses.

Abstract: A semiconductor integrated device having a current regulating diode may be substantially reduced in size and improved in performance by forming the current regulating diode of a plurality of MOS transistors each having a gate, a drain region, and a source region formed in a semiconductor substrate, the source regions and the substrate regions being electrically coupled to each other, the drain regions of at least two of the MOS transistors being electrically coupled, and the source regions of each of the MOS transistors being electrically coupled, the coupled drain regions, the coupled source regions, and the coupled gates forming a drain terminal, a source terminal and a gate terminal, respectively. In order to set a desired regulated current, selected coupling lines in the current regulating diode may be cut.

Abstract: The present invention provides a method of treating thrombocytopenia, which comprises administering to a patient suffering from thrombocytopenia, an effective amount of an indolocarbazole derivative represented by formula (I): ##STR1## wherein R.sup.1 represents a hydrogen atom, a substituted or unsubstituted lower alkyl group, a substituted or unsubstituted aralkyl group or a tetrahydropyranyl group; R.sup.2A and R.sup.3A, which may be the same or different, each represent a hydrogen atom, a substituted or unsubstituted lower alkyl group, a lower alkenyl group, a substituted or unsubstituted aralkyl group or a monosaccharide residue where a hydroxyl group at the anomer position is removed; R.sup.4A and R.sup.5A, which may be the same or different, each represent a hydrogen atom, a formyl group, a hydroxyl group or a halogen atom; W.sup.A1 and W.sup.A2 represent hydrogen atoms or are combined together to form an oxygen atom; and X.sup.A1 and X.sup.

Abstract: A method for fabricating a semiconductor device having a high-resistance polysilicon and low-resistance polysilicon on the surface of a substrate comprises forming a gate oxide film on the substrate, forming a polysilicon film on the gate oxide film, and simultaneously forming a resistance, a wire, and a gate electrode from the polysilicon film by etching using a resist as a mask. Impurities are introduced into the polysilicon for controlling a resistance value thereof to form the high-resistance polysilicon resistance through ion implantation. Impurities are also introduced into the polysilicon to form the low-resistance polysilicon wire through ion implantation. N-type impurities are introduced into the gate electrode of a PMOS transistor and the source and drain regions of the PMOS transistor through ion implantation. P-type impurities are introduced into the gate electrode of an NMOS transistor and the source and drain regions of the NMOS transistor through ion implantation.

Abstract: Disclosed is an indolocarbazole derivative represented by the following formula (I), or a pharmaceutically acceptable salt thereof: ##STR1## [wherein R.sup.1 represents substituted or unsubstituted lower alkyl, R.sup.2 represents hydrogen, substituted or unsubstituted lower alkyl, R.sup.3 and R.sup.4 are the same or different, and represent hydrogen, nitro, NR.sup.5 R.sup.6, OR.sup.9, substituted or unsubstituted lower alkyl, substituted or unsubstituted lower alkenyl, or CH.dbd.NNR.sup.10 R.sup.11, W represents two hydrogen atoms or oxygen, and Me represents methyl, provided that when R.sup.1 is unsubstituted lower alkyl, R.sup.3 and R.sup.4 are not simultaneously hydrogen.