Abstract: An object of the present invention is to provide an artificial quartz member inhibited from suffering the decrease in transmittance in a laser light wavelength region which is caused by long-term irradiation with a laser light having a wavelength of 200 nm or shorter; and a process for producing the artificial quartz member. The invention provides an artificial quartz member for use as an optical element to be irradiated with a laser light having a wavelength of 200 nm or shorter, having an aluminum content of 200 ppb or lower.

Abstract: According to one embodiment, a transmitter includes a first buffer, a second buffer, a logic circuit, and a class E power amplifier. The first buffer receives a first sinusoidal signal, and converts the first sinusoidal signal to a first rectangular wave signal. The second buffer receives a second sinusoidal signal having a phase delay with respect to the first sinusoidal signal, and converts the second sinusoidal signal to a second rectangular wave signal. The logic circuit receives the first and second rectangular wave signals, and performs logical operation processing on the first and second rectangular wave signals to generate a logic signal with a predetermined duty cycle. The class E power amplifier receives the logic signal, and performs amplification operation based on the logic signal.

Abstract: A stream input unit (102) receives a transport stream. A subtitle information extracting unit (104) separates the received transport stream into subtitle information and information other than the subtitle information. Next, a stream format converting unit (105) converts separated video/audio information contained in the transport stream into a program stream of video/audio. A subtitle format converting unit (107) converts the subtitle information separated by the subtitle information extracting unit (104) into a program stream of subtitle information. Thereafter, a subtitle information inserting unit (108) inserts the subtitle information converted by the subtitle format converting unit (107) into the program stream converted by the stream format converting unit (105), and outputs the resultant program stream.

Abstract: A digital audio data reproducing apparatus includes a main section and an operator section, which may be implemented as a remote controller detachable from the main section. The operator section includes a sensor configured to detect a touch and movement of an instructing member (e.g., a DJ player's finger) and to output corresponding operation data. The operator section further includes a first wireless communication block configured to transmit the operation data. The main section includes a second wireless communication block configured to receive the operation data, and a storage block configured to store a plurality of audio (e.g., music) data files. The main section further includes a reproduction processing block configured to simultaneously reproduce at least two of the plurality of audio data files, which are read from the storage block and processed according to the operation data received via the second wireless communication block.

Abstract: A voltage controlled oscillator has an amplifier circuit which includes an inductor and a variable capacitance element, and outputs an oscillation signal of an oscillation frequency corresponding to an oscillation frequency control voltage supplied to the variable capacitance element; and a power supply circuit which supplies an operation current to the amplifier circuit, wherein by changing the operation current outputted from the power supply circuit in a state where the oscillation frequency control voltage is fixed to a desired value, a value of the operation current at which the oscillation frequency of the oscillation signal takes a value in the vicinity of a maximum value, is extracted, and the extracted value of the operation current is set as a value of the operation current outputted from the power supply circuit.

Abstract: An electrically-conductive or insulating non-magnetic intermediate layer is inserted between a free magnetic layer and a pinned magnetic layer in a current-perpendicular-to-the-plane (CPP) structure magnetoresistive element. At least one of the free magnetic layer and the pinned magnetic layer is made of a nitrided magnetic metal alloy. This nitrided magnetic layers allows the CPP structure magnetoresistive element to enjoy an increased magnetoresistance change (?RA). In addition, the saturation magnetic flux density (Bs) decreases in a nitrided magnetic metal alloy. The inversion of magnetization is thus easily caused in the low Bs magnetic layer. The detection sensitivity of the CPP structure magnetoresistive element is improved. The CPP structure magnetoresistive element is thus allowed to detect magnetic bit data with higher accuracy.

Abstract: An object of the present invention is to provide an artificial quartz member inhibited from suffering the decrease in transmittance in a laser light wavelength region which is caused by long-term irradiation with a laser light having a wavelength of 200 nm or shorter; and a process for producing the artificial quartz member. The invention provides an artificial quartz member for use as an optical element to be irradiated with a laser light having a wavelength of 200 nm or shorter, having an aluminum content of 200 ppb or lower.

Abstract: A magneto-resistive element employs a CPP structure and includes an antiferromagnetic layer, a pinned magnetization layer, a nonmagnetic intermediate layer and a free magnetization layer that are successively stacked. The pinned magnetization layer includes a first pinned magnetization layer, a nonmagnetic coupling layer and a second pinned magnetization layer that are successively stacked on the antiferromagnetic layer, and the first and second pinned magnetization layers are antiferromagnetically exchange-coupled. One of the first and second pinned magnetization layer is formed by a ferromagnetic layer made of a ferromagnetic material at least including one element or alloy selected from a group consisting of Co, Fe, Ni and alloys thereof, and the other is formed by a resistance control layer made of a conductive ferromagnetic oxide.

Abstract: An amplifier circuit is provided with a control section that respectively selectively supplies either a second voltage or a third voltage to gates of a plurality of second transistors and gates of a plurality of third transistors by respectively switching the connection states of a plurality of first switching elements and a plurality of second switching elements to their first input terminal sides or to their second input terminal sides.

Abstract: A magnetoresistive element of a CPP type configuration including a fixed magnetic layer, a first non-magnetic layer, a free magnetic layer, and a second non-magnetic layer is disclosed. The magnetoresistive element includes a first interface layer situated between the free magnetic layer and the first non-magnetic layer, and a second interface layer situated between the free magnetic layer and the second non-magnetic layer. The first interface layer and the second interface layer include a material mainly having CoNiFe.

Abstract: A magnetoresistive element is disclosed that includes a magnetoresistive film; a cap film configured to cover the magnetoresistive film and include a three-layer structure in at least a part thereof, the three-layer structure being formed of a third protection layer, a second protection layer, and a first protection layer in order from the magnetoresistive film side; and upper and lower terminals for applying a sense current perpendicularly to the surface of the magnetoresistive film. The magnetoresistive film includes a first magnetic layer whose direction of magnetization is changed by an external magnetic field, a second magnetic layer whose direction of magnetization is fixed with respect to the external magnetic field, and a nonmagnetic layer magnetically separating the first magnetic layer and the second magnetic layer.

Abstract: A CPP magnetoresistive effect element includes a free magnetization layer, a fixed magnetization layer, and a plurality of conductive non-magnetic intermediate layers formed between the free magnetization layer and the fixed magnetization layer. An insulating layer and a magnetic layer including magnetic atoms are provided between any two of the non-magnetic intermediate layers.

Abstract: A CPP-type magnetoresistive element including a fixed magnetization layer, a non-magnetic metal layer, and a free magnetization layer that are stacked, and a diffusion prevention layer is disclosed. The free magnetization layer includes CoMnAl. The diffusion prevention layer is provided between the non-magnetic metal layer and the free magnetization layer so as to prevent Mn included in the free magnetization layer from diffusing into the non-magnetic metal layer. CoMnAl has a composition within the area formed by connecting Point A (44, 23, 33), Point B (48, 25, 27), Point C (60, 20, 20), Point D (65, 15, 20), Point E (65, 10, 25), Point F (60, 10, 30), and Point A with straight lines in this order in a ternary composition diagram where coordinates of the composition are expressed as (Co content, Mn content, Al content) with each of the Co, Mn, and Al contents being expressed in atomic percentage.

Abstract: A magnetoresistance effect element having a free magnetic layer is provided. The free magnetic layer is formed in a laminate including a fixed magnetization layer having a fixed magnetization direction, a non-magnetic layer formed on the fixed magnetization layer, a first ferromagnetic layer, a non-magnetic metallic layer formed on the first ferromagnetic layer, and a second ferromagnetic layer formed on the non-magnetic metallic layer. The free magnetic layer includes magnetic recording regions, and in each region, the first ferromagnetic layer and the second ferromagnetic layer are coupled such that their magnetization directions are anti-parallel with each other, and one of the magnetic recording regions is opposite to the fixed magnetization layer with the non-magnetic layer therebetween.

Abstract: A CPP-type magnetoresistive device includes a magnetization pinned layer, a magnetization free layer, and a non-magnetic layer provided between the magnetization pinned layer and the magnetization free layer. At least one of the magnetization free layer and the magnetization pinned layer is formed of CoFeGe, and the CoFeGe has a composition falling within a range defined by line segments connecting coordinate points A, B, C, and D in a ternary composition diagram where the point A is (42.5, 30, 27.5), the point B is (35, 52.5, 12.5), the point C is (57.5, 30.0, 12.5), and the point D is (45.0, 27.5, 27.5), and where each of the coordinate points is represented by content percentage of (Co, Fe, Ge) expressed by atomic percent (at. %).

Abstract: The magnetoresistive effect element comprises an electrode layer 12 of a crystalline material; a base layer 14 of a conductive amorphous material formed over the electrode layer 12, an antiferromagnetic layer 18 of a crystalline material formed over the base layer 14, a ferromagnetic layer 20 formed over the antiferromagnetic layer 18 and having the magnetization direction defined by the antiferromagnetic layer 18, a nonmagnetic intermediate layer 22 formed over the ferromagnetic layer 20, a ferromagnetic layer 24 formed over the nonmagnetic intermediate layer 22 and having the magnetization direction changed by an external magnetic field, and an electrode layer 28 formed over the ferromagnetic layer 24.

Abstract: A current-perpendicular-to-the-plane (CPP) structure magnetoresistive element includes an electrode layer contacting a magnetoresistive film. A low resistance region is defined to extend rearward along the boundary of the magnetoresistive film from the front end exposed at the medium-opposed surface of the head slider. A high resistance region is defined to extend rearward along the boundary from the rear end of the low resistance region. The high resistance region has a resistivity higher than that of the low resistance region. The high resistance region serves to restrict the path of a sensing current nearest to the medium-opposed surface. The sensing current is allowed to concentrate at a position closest to the medium-opposed surface in the magnetoresistive film. Magnetization sufficiently rotates in the magnetoresistive film near the medium-opposed surface. The CPP structure magnetoresistive element maintains a sufficient variation in the resistance. A sufficient sensitivity can be maintained.

Abstract: The magnetic memory device comprises a recording layer 70 formed linearly over a substrate 10 and having a plurality of pinning sites 52 for restricting the motion of domain walls 50 formed at a prescribed pitch and having the regions between the plural pinning sites 52 as recording bits 72. The recording layer 70 includes a first recording layer portion 46 and a second recording layer portion 68, and the second recording layer portion 68 is positioned above the first recording layer portion 46 and has one end connected to one end of the first recording layer portion 46. The second recording layer portion 68 is formed above the first recording layer portion 46, and the end of the second recording layer portion 68 is connected to one end of the first recording layer portion 46, whereby the space required to form the recording layer 70 can be small.

Abstract: A CPP-type magnetoresistive element including a fixed magnetization layer, a non-magnetic metal layer, and a free magnetization layer that are stacked, and a diffusion prevention layer is disclosed. The free magnetization layer includes CoMnAl. The diffusion prevention layer is provided between the non-magnetic metal layer and the free magnetization layer so as to prevent Mn included in the free magnetization layer from diffusing into the non-magnetic metal layer. CoMnAl has a composition within the area formed by connecting Point A (44, 23, 33), Point B (48, 25, 27), Point C (60, 20, 20), Point D (65, 15, 20), Point E (65, 10, 25), Point F (60, 10, 30), and Point A with straight lines in this order in a ternary composition diagram where coordinates of the composition are expressed as (Co content, Mn content, Al content) with each of the Co, Mn, and Al contents being expressed in atomic percentage.

Abstract: An amplifier circuit is provided with a control section that respectively selectively supplies either a second voltage or a third voltage to gates of a plurality of second transistors and gates of a plurality of third transistors by respectively switching the connection states of a plurality of first switching elements and a plurality of second switching elements to their first input terminal sides or to their second input terminal sides.