Abstract: A battery cell pressing system may include a sealed case having an internal chamber, the sealed case including at least one window to allow visual inspection of the internal chamber; a pouch-type battery cell disposed within the internal chamber of the sealed case; a fluid filling the internal chamber and surrounding the pouch-type battery cell; a fluid entrance in fluid communication with the internal chamber; a pressing member configured to adjust a pressure of the fluid within the internal chamber such that the pressure at which the fluid presses the pouch-type battery cell is approximately 1 MPa to 10 MPa; a heater configured to heat the fluid within the internal chamber; and a pressure measuring member configured to measure the pressure within the internal chamber. The fluid isotropically presses the pouch-type battery cell during at least one of charging and discharging of the pouch-type battery cell.

Abstract: A method of controlling a cycling pressure of a secondary battery can include assembling the secondary battery by stacking a cathode, a separator, and an anode in order; activating the secondary battery by applying a pressure of about 5 MPa or less; and cycling the secondary battery by applying the pressure of about 5 MPa or less.

Abstract: An electronic device is provided. The electronic device includes a panel, a protective substrate, and a first light-shielding structure. The panel has an active area and a peripheral area. The peripheral area is adjacent to the active area. The protective substrate is disposed opposite to the panel. The first light-shielding structure is disposed on a surface of the protective substrate and corresponds to the peripheral area. A portion of the first light-shielding structure that overlaps the peripheral area has at least one opening.

Abstract: Various embodiments include protection layers for a transistor and methods of forming the same. In an embodiment, a method includes: exposing a semiconductor nanostructure, a dummy nanostructure, and an isolation region by removing a dummy gate; increasing a deposition selectivity between a top surface of the semiconductor nanostructure and a top surface of the isolation region relative a selective deposition process; depositing a protection layer on the top surface of the isolation region by performing the selective deposition process; removing the dummy nanostructure by selectively etching a dummy material of the dummy nanostructure at a faster rate than a protection material of the protection layer; and forming a gate structure around the semiconductor nanostructure.

Abstract: A manufacturing method of a transformer includes: winding a first winding wire around a bobbin, wherein two ends of the first winding wire are connected to a first and a second pin of the bobbin respectively; winding a second winding wire around the bobbin, wherein two ends of the second winding wire are connected to a third and a fourth pin of the bobbin respectively; and winding a third and a fourth winding wire in parallel around the bobbin, wherein two ends of the third winding wire are connected to the second and a fifth pin of the bobbin respectively, and two ends of the fourth winding wire are connected to the fifth and a sixth pin respectively. The first, the third and the fourth winding wires form a primary coil, and the second winding wire is a secondary coil.

Abstract: Methods and systems relating to the field of parallel computing are disclosed herein. The methods and systems disclosed include approaches for sparsity uniformity enforcement for a set of computational nodes which are used to execute a complex computation. A disclosed method includes determining a sparsity distribution in a set of operand data, and generating, using a compiler, a set of instructions for executing, using the set of operand data and a set of processing cores, a complex computation. Alternatively, the method includes altering the operand data. The method also includes distributing the set of operand data to the set of processing cores for use in executing the complex computation in accordance with the set of instructions. Either the altering is conducted to, or the compiler is programmed to, balance the sparsity distribution among the set of processing cores.

Abstract: A method of fabricating a semiconductor device includes the following steps. A plurality of doped regions are formed in a substrate. A first dielectric layer is formed on the substrate. A plurality of first contacts and second contacts are formed in the first dielectric layer to be connected to the plurality of doped regions. A memory element is formed on the first dielectric layer. The memory element is electrically connected to the second contact. A second dielectric layer is formed on the first dielectric layer. The second dielectric layer surrounds the memory element. A conductive line is formed in the second dielectric layer. A top surface of the conductive line is at a same level as a top surface of the memory element, and the conductive line is electrically connected to the plurality of first contacts.

Abstract: Methods for recovering the performance of a halide-based solid electrolyte are described. In one aspect, a halide-based solid electrolyte that has been exposed to air is subjected to a heat-treatment process, where the performance of the halide-based solid electrolyte is recovered, e.g., the ionic conductivity obtained after heat treatment is recovered to a level similar to that before air exposure.

Abstract: A semiconductor device includes a substrate, a dummy gate structure, and a gate structure. The substrate has a dummy gate trench and a gate trench, and includes a first well region, a second well region and a source region. The first well region is formed by doping at least one element from a first element group, and has a first conductive channel. The second well region is formed by doping at least one element from a second element group, the second well region is on the first well region and has a second conductive channel, a polarity of the second conductive channel is opposite to that of the first conductive channel. The dummy gate structure is in the dummy gate trench of the substrate, and a portion of the dummy gate structure is in the first well region. The gate structure is between the adjacent dummy gate structures.

Abstract: A power semiconductor device includes a semiconductor substrate, a drift layer, a well region, a doped region, two dummy trenches, a gate structure and a dielectric layer. The semiconductor substrate is doped to have a first conductive channel. The drift layer on the semiconductor substrate is doped to have the first conductive channel. The well region on the drift layer is doped to have a second conductive channel having a polarity opposite to that of the first conductive channel. The doped region on the well region is doped to have the first conductive channel. Two dummy trenches pass through the doped region and the well region. Each of the dummy trenches has a dummy gate. The gate structure has a real gate and is between the dummy trenches. The dielectric layer isolates the dummy gate and the real gate from the doped region, the well region and the drift layer.

Abstract: A method of fabricating a semiconductor device includes the following steps. A plurality of doped regions are formed in a substrate. A first dielectric layer is formed on the substrate. A plurality of first contacts and second contacts are formed in the first dielectric layer to be connected to the plurality of doped regions. A memory element is formed on the first dielectric layer. The memory element is electrically connected to the second contact. A second dielectric layer is formed on the first dielectric layer. The second dielectric layer surrounds the memory element. A conductive line is formed in the second dielectric layer. A top surface of the conductive line is at a same level as a top surface of the memory element, and the conductive line is electrically connected to the plurality of first contacts.

Abstract: A semiconductor device includes: a substrate; a source region disposed on the substrate; a drain region disposed on the source region; and a floating main body region disposed between the source region and the drain region. The floating main body region vertically separates the source region from the drain region. The semiconductor device further includes: a gate region laterally wrapped around the floating main body region; and a gate dielectric located between the floating main body region and the gate region, and insulated the floating main body region from the gate region. A material of the gate dielectric has a negative capacitance feature.

Abstract: A method for manufacturing a semiconductor device, including the following steps. A plurality of first vias are formed in a first dielectric layer in a memory cell region and a peripheral region. A surface treatment is performed on the plurality of first vias to form a plurality of sacrificial layers. The plurality of sacrificial layers are removed to form a plurality of recesses. A plurality of protective layers are formed in the plurality of recesses. A memory device is formed on the first dielectric layer in the memory cell region. A second dielectric layer is formed on the memory device and on the first dielectric layer. A plurality of second vias is formed in the second dielectric layer in the memory cell region and the peripheral region to electrically connect the memory device in the memory cell region and the first vias in the peripheral region, respectively.

Abstract: A method for recycling a polymer composite containing polyurethane waste and polyethylene terephthalate waste includes the steps of: (a) mixing a polymer composite and a first preheated glycolysis agent to obtain a premix, the polymer composite containing polyurethane waste and polyethylene terephthalate waste; (b) heating the premix to a temperature ranging from 180° C. to 240° C. so as to obtain a liquefied premix; (c) subjecting the liquefied premix to a degradation process so as to obtain a polyol mixture; and (d) subjecting the polyol mixture and a second glycolysis agent to a heat transfer process, so as to obtain a cooled polyol mixture, and a second preheated glycolysis agent.

Abstract: A resistive memory apparatus including a memory cell array, at least one dummy transistor and a control circuit is provided. The memory cell array includes a plurality of memory cells. Each of the memory cells includes a resistive switching element. The dummy transistor is electrically isolated from the resistive switching element. The control circuit is coupled to the memory cell array and the dummy transistor. The control circuit is configured to provide a first bit line voltage, a source line voltage and a word line voltage to the dummy transistor to drive the dummy transistor to output a saturation current. The control circuit is further configured to determine a value of a second bit line voltage for driving the memory cells according to the saturation current. In addition, an operating method and a memory cell array of the resistive memory apparatus are also provided.

Abstract: A biobased water repellent auxiliary agent and a method of manufacturing the same are provided. The biobased water repellent auxiliary agent includes a molecular complex composed of a polyurethane (PU) dendrimer and a water-based polyurethane dispersion (PUD). The PU dendrimer is formed by polymerizing a trifunctional-group-containing biobased material and an aliphatic linear isocyanate. The water-based PUD includes a monomer derived from the trifunctional-group-containing biobased material, a monomer derived from a cyclic isocyanate, and a monomer derived from a hydrophilic compound. The molecular complex is formed by copolymerizing the PU dendrimer, the trifunctional-group-containing biobased material, the cyclic isocyanate, and the hydrophilic compound.

Abstract: A method for performing a test upon a flash memory module includes: performing data writing upon a plurality of first blocks of a first group in the flash memory module; reading the plurality of first blocks of the first group to determine whether there is any abnormal block in the plurality of first blocks and generating a first test result; after the plurality of first blocks are read, performing data writing upon a plurality of second blocks of a second group in the flash memory module; and reading the plurality of second blocks of the second group to determine whether there is any abnormal block in the plurality of second blocks and generating a second test result.

Abstract: An electronic device includes an M.2 connector, a protection circuit, and a processor. The processor is configured to determine whether a module inserted into the M.2 connector is a 4G module or a 5G module. In response to that the processor determines the inserted module is the 4G module, the processor causes the protection circuit to execute a protection process. In response to that the processor determines the inserted module is the 5G module, the processor causes the protection circuit not to execute the protection process. In the protection process, the protection circuit blocks an electrical connection between a first pin of the M.2 connector and a first power supply and blocks an electrical connection between a second pin of the M.2 connector and a reset signal. A method for making two communication modules be compatible in a single M.2 connector and a computer-implemented method thereof are also provided.

Abstract: Provided is a semiconductor device including a substrate, a channel layer, a gate structure, a first doped region, a second doped region, a third doped region and a channel cap layer. The channel layer is located on the substrate. The channel layer has a trench. The gate structure is disposed in the trench. The first doped region and the second doped region are located in the channel layer on two sides of the gate structure. The third doped region is located in the substrate below the channel layer. The channel cap layer is located between the gate structure and the first doped region, between the gate structure and the second doped region, and between the gate structure and the channel layer. An energy band gap of the channel cap layer is larger than an energy band gap of the channel layer.

Abstract: A resistive memory apparatus including a memory cell array, at least one dummy transistor and a control circuit is provided. The memory cell array includes a plurality of memory cells. Each of the memory cells includes a resistive switching element. The dummy transistor is electrically isolated from the resistive switching element. The control circuit is coupled to the memory cell array and the dummy transistor. The control circuit is configured to provide a first bit line voltage, a source line voltage and a word line voltage to the dummy transistor to drive the dummy transistor to output a saturation current. The control circuit is further configured to determine a value of a second bit line voltage for driving the memory cells according to the saturation current. In addition, an operating method and a memory cell array of the resistive memory apparatus are also provided.