Abstract: A magnetic assembly is provided, including an annular main magnetic element and an annular axillary magnetic element. The main magnetic element has a plurality of main magnetic segments of different polar directions and lengths. The axillary magnetic element has a plurality of axillary magnetic segments of different polar directions and lengths, corresponding to the main magnetic segments.

Abstract: The disclosure describes a multi-write read-only memory array and a read-only memory thereof. The read-only memory array includes common-source lines, word bit lines, and sub-memory arrays. The common-source lines include a first common-source line and a second common-source line. The word bit lines include a first word bit line and a second word bit line. Each sub-memory array includes four memory cells. Each memory cell is coupled to the word bit line and the common-source line. The read-only memory includes a field-effect transistor and a capacitor. The source of the field-effect transistor is coupled to the word bit line. The drain of the field-effect transistor is coupled to the common-source line. The capacitor is coupled to the gate of the field-effect transistor and the word bit line.

Abstract: A small-area common-voltage anti-fuse array includes word lines, select lines, common-voltage lines, and anti-fuse elements. The word lines include a first word line and a second word line. The select lines are perpendicular to the common-voltage lines and the word lines. The select lines include a first select line. The common-voltage lines are directly coupled together. The common-voltage lines include a first common-voltage line and a second common-voltage line. Each anti-fuse element includes a first anti-fuse memory cell coupled to the first word line, the first select line, and the first common-voltage line and a second anti-fuse memory cell coupled to the second word line, the first select line, and the second common-voltage line.

Abstract: In an aspect, a substrate for an integrated circuit (IC) package includes a first dielectric layer, a first metallization layer on a first surface of the first dielectric layer and including a first pad structure and a first trace structure, a second metallization layer on a second surface of the first dielectric layer and including a second pad structure and a second trace structure, a second dielectric layer on the second surface of the first dielectric layer, and a third metallization layer on a second surface of the second dielectric layer and having a third pad structure. The substrate further includes a conductive stud coupled to the second pad structure and a second via structure embedded in the second dielectric layer. The second via structure has a first end coupled to the conductive stud and a second end coupled to the third pad structure.

Abstract: A multi-write read-only memory array includes word common-source lines, bit lines, and sub-memory arrays. The word common-source lines include a first word common-source line and a second word common-source line. The bit lines include a first bit line and a second bit line. Each sub-memory array includes a first memory cell coupled to the first word common-source line and the first bit line, a second memory cell coupled to the first word common-source line and the second bit line, a third memory cell coupled to the second word common-source line and the second bit line, and a fourth memory cell coupled to the second word common-source line and the first bit line.

Abstract: A method for managing road defects includes capturing images and depth information from a roadway using a first vision system, identifying position of the captured images, processing the captured images by a processing system to i) detect, and ii) classify one or more types of road defects, quantifying the one or more types of road defects to thereby generate quantification parameters by the processing system, and scoring the severity of each of the one or more types of road defects using the processing system that includes a predetermined rule-based scorer based on the generated quantified parameters of the one or more types of road defects.

Abstract: A small-area high-efficiency read-only memory (ROM) array and a method for operating the same are provided. The small-area high-efficiency ROM array includes bit lines, word common-source lines, and sub-memory arrays. Each sub-memory array includes first, second, third, and fourth memory cells connected to a bit line and a word common-source line. All the memory cells are connected to the same word common-source line and respectively connected to different bit lines. Sharing the gate and the source can not only greatly reduce the overall layout area, but also effectively reduce the load of the memory array to achieve the high-efficiency reading and writing goal.

Abstract: A high-speed multi-write read only memory array includes word lines, select lines, bit lines, and sub-memory arrays. There are a first word line, a first select line, a second select line, a first bit line, a second bit line, a third bit line, and a fourth bit line. Each sub-memory array includes a first memory cell coupled to the first word line, the first select line, and the first bit line, a second memory cell coupled to the first word line, the first select line, and the second bit line, a third memory cell coupled to the first word line, the second select line, and the third bit line, and a fourth memory cell coupled to the first word line, the second select line, and the fourth bit line.

Abstract: A small-area common-voltage anti-fuse array includes word lines, select lines, common-voltage lines, and anti-fuse elements. The word lines include a first word line and a second word line. The select lines are perpendicular to the common-voltage lines and the word lines. The select lines include a first select line. The common-voltage lines are directly coupled together. The common-voltage lines include a first common-voltage line and a second common-voltage line. Each anti-fuse element includes a first anti-fuse memory cell coupled to the first word line, the first select line, and the first common-voltage line and a second anti-fuse memory cell coupled to the second word line, the first select line, and the second common-voltage line.

Abstract: A small-area common-voltage multi-write non-volatile memory array includes word lines, select lines, common-voltage lines, and sub-memory arrays. The word lines include a first word line and a second word line. The select lines include a first select line. The common-voltage lines are directly coupled together. The common-voltage lines include a first common-voltage line and a second common-voltage line. Each sub-memory array includes a first non-volatile memory cell coupled to the first word line, the first select line, and the first common-voltage line and a second non-volatile memory cell coupled to the second word line, the first select line, and the second common-voltage line.

Abstract: Disclosed is a compact electronic device configured to efficiently manage air circulation and prevent overheating. The device features an innovative cooling system comprising a fan module within a uniquely structured housing that includes a base portion, an inner casing, and a removable top cover. The inner casing features strategically placed windows that direct drawn airflow over specific power supply components, enhancing cooling performance. The enhanced cooling is also provided by an air gap formed between the base portion and the top cover, as well as sidewall intake paths of varying widths adjacent the windows. These features work together to draw in and distribute ambient air effectively across heat-generating components, leveraging negative pressure created by a fan module. The result is a highly efficient cooling mechanism for compact devices such as wireless access point configured to plug into electrical outlets.

Abstract: An air flow redirection system for redirecting exhaust air flow away from an external surface upon which the device is positioned, the device may include a housing including a first side, a second side opposite the first side, at least one sidewall extending between the first side and second side, a vent, the vent defining an opening extending through the at least one sidewall placing an interior chamber of the device in fluid communication with an exterior region, at least one rib defining slots in the vent, and an arc. Air flow produced by a fan located in the interior chamber is directed towards the vent in a first direction, and the arc acts in combination with the at least one rib and raises a direction of the air flow upward in a second direction towards a plane of the first side as the air flow exits the vent.

Abstract: A method includes forming a first electrode layer on a substrate; depositing a transition metal layer on the first electrode layer, introducing a chalcogen precursor around the transition metal layer; performing a plasma treatment to ionize the chalcogen precursor around the transition metal layer to convert the transition metal layer into a transition metal dichalcogenide (TMDC) layer at a temperature lower than about 400° C.; forming a second electrode layer on the TMDC layer.

Abstract: A method for forming a semiconductor device includes providing a substrate that has a first region and a second region adjacent to the first region; forming several first components on the substrate and in the first region, and forming a second component on the substrate and in the second region; forming a first material layer over the first components to cover the first components; and forming a patterned dummy layer that is embedded in the first material layer; forming a second material layer over the second component to cover the second component; and performing a polishing process on the first material layer and the second material layer simultaneously. The second material layer and the first material layer include different materials.

Abstract: A small-area high-efficiency read-only memory (ROM) array and a method for operating the same are provided. The small-area high-efficiency ROM array includes bit lines, word common-source lines, and sub-memory arrays. Each sub-memory array includes first, second, third, and fourth memory cells connected to a bit line and a word common-source line. All the memory cells are connected to the same word common-source line and respectively connected to different bit lines. Sharing the gate and the source can not only greatly reduce the overall layout area, but also effectively reduce the load of the memory array to achieve the high-efficiency reading and writing goal.

Abstract: An electronic device includes a substrate, a plurality of light-emitting units, an encapsulation layer and a plurality of patterns. The plurality of light-emitting units are disposed on the substrate. The encapsulation layer is disposed on the plurality of light-emitting units. The plurality of patterns are disposed on the encapsulation layer, overlap with at least a portion of the plurality of light-emitting units, and overlap with at least a portion of the encapsulation layer. In a top view of the electronic device, a first part of the plurality of patterns and a second part of the plurality of patterns are different in length.

Abstract: A package includes a frontside redistribution layer (RDL) structure, a semiconductor die on the frontside RDL structure, and a backside RDL structure on the semiconductor die including a first RDL, and a backside connector extending from a distal side of the first RDL and including a tapered portion having a width that decreases in a direction away from the first RDL, wherein the tapered portion includes a contact surface at an end of the tapered portion. A method of forming the package may include forming the backside redistribution layer (RDL) structure, attaching a semiconductor die to the backside RDL structure, forming an encapsulation layer around the semiconductor die on the backside RDL structure, and forming a frontside RDL structure on the semiconductor die and the encapsulation layer.

Abstract: An electronic device which is capable of being bent in a first direction and includes a plurality of light-emitting units and a plurality of conductive patterns overlapping with at least a portion of the plurality of light-emitting units and extending in a second direction. The first direction and the second direction have an angle ? of not greater than 30 degrees.

Abstract: A package structure including a semiconductor die, a redistribution circuit structure and an electronic device is provided. The semiconductor die is laterally encapsulated by an insulating encapsulation. The redistribution circuit structure is disposed on the semiconductor die and the insulating encapsulation. The redistribution circuit structure includes a colored dielectric layer, inter-dielectric layers and redistribution conductive layers embedded in the inter-dielectric layers. The electronic device is disposed over the colored dielectric layer and electrically connected to the redistribution circuit structure.

Abstract: An electrostatic sensing system configured to sense an electrostatic information of a fluid inside a fluid distribution component and including an electrostatic sensing assembly, a signal amplifier and an analog-to-digital converter. The electrostatic sensing assembly includes a sensing component, and a shield. The sensing component is configured to be disposed at the fluid distribution component. The sensing component is disposed through the fluid distribution component so as to be partially located in the fluid distribution component. The shield surrounds a part of the sensing component that is located in the fluid distribution component. At least part of the shield is located on an upstream side of the sensing component. The signal amplifier is electrically connected to the sensing component. The analog-to-digital converter is electrically connected to the signal amplifier. The shield has an opening spaced apart from the sensing component.