Patents by Inventor Yuting Wang

Yuting Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200246874
    Abstract: The metal powder producing apparatus includes: a first gas jet nozzle that includes jet holes disposed in a bottom surface of a gas jet device so as to form first rings each, and jets gas against molten metal flowing down through the liquid nozzles; a second gas jet nozzle that includes jet holes disposed in the bottom surface of the gas jet device so as to form second rings each on an outer side of a corresponding one of the first rings, and jets gas to prevent scatter of metal particles; and a third gas jet nozzle that includes jet holes disposed in the bottom surface of the gas jet device so as to form a third ring on an outer side of the second gas jet nozzle, and jets gas against an inner wall surface of the spray chamber.
    Type: Application
    Filed: December 18, 2019
    Publication date: August 6, 2020
    Applicant: MITSUBISHI HITACHI POWER SYSTEMS, LTD.
    Inventors: Takashi SHIBAYAMA, Shinya IMANO, Yuting WANG, Shigenobu EGUCHI
  • Publication number: 20200215615
    Abstract: A metal-powder producing apparatus includes a spray chamber, and a plurality of spray nozzles that liquid-spray a melted metal into the spray chamber. Each of the plurality of spray nozzles includes: a liquid nozzle that allows the melted metal to flow down into the spray chamber; and a gas-jet nozzle that has a plurality of gas-jet holes arranged around the liquid nozzle and causing a gas fluid to collide with the melted metal having flowed down from the liquid nozzle.
    Type: Application
    Filed: December 7, 2018
    Publication date: July 9, 2020
    Applicant: MITSUBISHI HITACHI POWER SYSTEMS, LTD.
    Inventors: Takashi SHIBAYAMA, Shigenobu EGUCHI, Yuting WANG, Shinya IMANO
  • Patent number: 10632535
    Abstract: There is provided an additive manufactured (AM) article formed of a Co based alloy having a composition comprising: in mass %, 0.08-0.25% C; 0.1% or less B; 10-30% Cr; 30% or less in total of Fe and Ni, the Fe being 5% or less; 5-12% in total of W and/or Mo; 0.5-2% in total of Ti, Zr, Nb and Ta; 0.5% or less Si; 0.5% or less Mn; 0.003-0.04% N; and the balance being Co and impurities. The AM article comprises crystal grains with an average size of 10-100 ?m. In the crystal grains, segregation cells with an average size of 0.15-1.5 ?m are formed, in which components constituting an MC type carbide phase comprising the Ti, Zr, Nb and/or Ta are segregated in boundary regions of the cells, and/or grains of the MC type carbide phase are precipitated at an average intergrain distance of 0.15-1.5 ?m.
    Type: Grant
    Filed: September 7, 2018
    Date of Patent: April 28, 2020
    Assignee: MITSUBISHI HITACHI POWER SYSTEMS, LTD.
    Inventors: Shinya Imano, Yuting Wang, Shigenobu Eguchi, Yoshitaka Uemura, Norihiko Motoyama, Takanao Komaki
  • Patent number: 10571938
    Abstract: A method for controlling a value of a voltage at a conductor to which at least one secondary winding of a first steppable transformer and a secondary winding of a second steppable transformer are connected is provided. The method includes: if a voltage deviation of the voltage at the conductor from a voltage setpoint value is within a first range around the voltage setpoint value, and if an overall deviation of a sum of the voltage deviation and a reactive current deviation from the voltage setpoint value respectively for the first and the second transformer is outside of a second range, which is larger than the first, around the voltage setpoint value: setting a delay time for stepping the first transformer and/or the second transformer in such a way that stepping of the first or the second transformer that counteracts the voltage deviation is prioritized.
    Type: Grant
    Filed: August 21, 2018
    Date of Patent: February 25, 2020
    Assignee: Siemens Aktiengesellschaft
    Inventors: Yuting Wang, Frank Mieske
  • Publication number: 20200016659
    Abstract: There is provided an additive manufactured (AM) article formed of a Co based alloy having a composition comprising: in mass %, 0.08-0.25% C; 0.1% or less B; 10-30% Cr; 30% or less in total of Fe and Ni, the Fe being 5% or less; 5-12% in total of W and/or Mo; 0.5-2% in total of Ti, Zr, Nb and Ta; 0.5% or less Si; 0.5% or less Mn; 0.003-0.04% N; and the balance being Co and impurities. The AM article comprises crystal grains with an average size of 10-100 ?m. In the crystal grains, segregation cells with an average size of 0.15-1.5 ?m are formed, in which components constituting an MC type carbide phase comprising the Ti, Zr, Nb and/or Ta are segregated in boundary regions of the cells, and/or grains of the MC type carbide phase are precipitated at an average intergrain distance of 0.15-1.5 ?m.
    Type: Application
    Filed: September 25, 2019
    Publication date: January 16, 2020
    Applicant: MITSUBISHI HITACHI POWER SYSTEMS, LTD.
    Inventors: Shinya IMANO, Yuting WANG, Shigenobu EGUCHI, Yoshitaka UEMURA, Norihiko MOTOYAMA, Takanao KOMAKI
  • Publication number: 20200016658
    Abstract: There is provided an additive manufactured (AM) article formed of a Co based alloy having a composition comprising: in mass %, 0.08-0.25% C; 0.1% or less B; 10-30% Cr; 30% or less in total of Fe and Ni, the Fe being 5% or less; 5-12% in total of W and/or Mo; 0.5-2% in total of Ti, Zr, Nb and Ta; 0.5% or less Si; 0.5% or less Mn; 0.003-0.04% N; and the balance being Co and impurities. The AM article comprises crystal grains with an average size of 10-100 ?m. In the crystal grains, segregation cells with an average size of 0.15-1.5 ?m are formed, in which components constituting an MC type carbide phase comprising the Ti, Zr, Nb and/or Ta are segregated in boundary regions of the cells, and/or grains of the MC type carbide phase are precipitated at an average intergrain distance of 0.15-1.5 ?m.
    Type: Application
    Filed: September 25, 2019
    Publication date: January 16, 2020
    Applicant: MITSUBISHI HITACHI POWER SYSTEMS, LTD.
    Inventors: Shinya IMANO, Yuting WANG, Shigenobu EGUCHI, Yoshitaka UEMURA, Norihiko MOTOYAMA, Takanao KOMAKI
  • Publication number: 20190348581
    Abstract: In various embodiments, a layer of organic encapsulant is provided over a surface of an ultraviolet (UV) light-emitting semiconductor die, and at least a portion of the encapsulant is exposed to UV light to convert at least some of said portion of the encapsulant into non-stoichiometric silica material. The non-stoichiometric silica material includes silicon, oxygen, and carbon, and a carbon content of the non-stoichiometric silica material is greater than 1 ppm and less than 40 atomic percent.
    Type: Application
    Filed: May 24, 2019
    Publication date: November 14, 2019
    Inventors: Ken Kitamura, Masato Toita, Hironori Ishii, Yuting Wang, Leo J. Schowalter, Jianfeng Chen, James R. Grandusky
  • Patent number: 10383963
    Abstract: In various embodiments, an illumination device features an ultraviolet (UV) light-emitting device at least partially surrounded by an encapsulant. A barrier layer is disposed between the light-emitting device and the encapsulant and is configured to substantially prevent UV light emitted by the light-emitting device from entering the encapsulant.
    Type: Grant
    Filed: December 8, 2016
    Date of Patent: August 20, 2019
    Assignee: CRYSTAL IS, INC.
    Inventors: Masato Toita, Jianfeng Chen, Yuxin Li, Yuting Wang, Hironori Ishii, Ken Kitamura
  • Patent number: 10347805
    Abstract: In various embodiments, a layer of organic encapsulant is provided over a surface of an ultraviolet (UV) light-emitting semiconductor die, and at least a portion of the encapsulant is exposed to UV light to convert at least some of said portion of the encapsulant into non-stoichiometric silica material. The non-stoichiometric silica material includes silicon, oxygen, and carbon, and a carbon content of the non-stoichiometric silica material is greater than 1 ppm and less than 40 atomic percent.
    Type: Grant
    Filed: February 16, 2018
    Date of Patent: July 9, 2019
    Assignee: CRYSTAL IS, INC.
    Inventors: Ken Kitamura, Masato Toita, Hironori Ishii, Yuting Wang, Leo J. Schowalter, Jianfeng Chen, James R. Grandusky
  • Patent number: 10325402
    Abstract: Various approaches discussed herein enable providing accurate 3D visualizations of an object at arbitrary viewpoints by identifying portions of geometric mesh data (e.g., triangles of a triangular mesh) associated with the object and determining instances of image data (e.g., high-resolution image data) in which the portions of geometric mesh data are viewable, the instances captured at various viewpoints surrounding the object. The instances of image data are modified based on mappings between the various viewpoints, such that features of a texture generated for a pixel location of the 3D visualization are based on accurate pixel locations of the modified instances of image data, offering a clear rendering of the object without misalignment artifacts.
    Type: Grant
    Filed: July 17, 2015
    Date of Patent: June 18, 2019
    Assignee: A9.COM, INC.
    Inventors: Yuting Wang, Himanshu Arora, Arnab Sanat Kumar Dhua
  • Publication number: 20190076926
    Abstract: There is provided an additive manufactured (AM) article formed of a Co based alloy having a composition comprising: in mass %, 0.08-0.25% C; 0.1% or less B; 10-30% Cr; 30% or less in total of Fe and Ni, the Fe being 5% or less; 5-12% in total of W and/or Mo; 0.5-2% in total of Ti, Zr, Nb and Ta; 0.5% or less Si; 0.5% or less Mn; 0.003-0.04% N; and the balance being Co and impurities. The AM article comprises crystal grains with an average size of 10-100 ?m. In the crystal grains, segregation cells with an average size of 0.15-1.5 ?m are formed, in which components constituting an MC type carbide phase comprising the Ti, Zr, Nb and/or Ta are segregated in boundary regions of the cells, and/or grains of the MC type carbide phase are precipitated at an average intergrain distance of 0.15-1.5 ?m.
    Type: Application
    Filed: September 7, 2018
    Publication date: March 14, 2019
    Applicant: MITSUBISHI HITACHI POWER SYSTEMS, LTD.
    Inventors: Shinya IMANO, Yuting WANG, Shigenobu EGUCHI, Yoshitaka UEMURA, Norihiko MOTOYAMA, Takanao KOMAKI
  • Publication number: 20190064858
    Abstract: A method for controlling a value of a voltage at a conductor to which at least one secondary winding of a first steppable transformer and a secondary winding of a second steppable transformer are connected is provided. The method includes: if a voltage deviation of the voltage at the conductor from a voltage setpoint value is within a first range around the voltage setpoint value, and if an overall deviation of a sum of the voltage deviation and a reactive current deviation from the voltage setpoint value respectively for the first and the second transformer is outside of a second range, which is larger than the first, around the voltage setpoint value: setting a delay time for stepping the first transformer and/or the second transformer in such a way that stepping of the first or the second transformer that counteracts the voltage deviation is prioritized.
    Type: Application
    Filed: August 21, 2018
    Publication date: February 28, 2019
    Inventors: YUTING WANG, FRANK MIESKE
  • Patent number: 10024174
    Abstract: It is an objective of the invention to provide a low cost Ni-based casting superalloy suitable for casting articles having a far better balance among a high-temperature mechanical strength, a grain boundary strength and a oxidation resistance than conventional Ni-based superalloy cast articles. There is provided an Ni-base casting super alloy including: in mass %, 0.03 to 0.15% of C; 0.005 to 0.04% of B; 0.01 to 1% of Hf; 0.05% or less of Zr; 3.5 to 4.9% of Al; 4.4 to 8% of Ta; 2.6 to 3.9% of Ti; 0.05 to 1% of Nb; 8 to 12% of Cr; 1 to 6.9% of Co; 4 to 10% of W; 0.1 to 0.95% of Mo; 0.02 to 1.1% of Si and/or 0.1 to 3% of Fe; and the balance including Ni and incidental impurities.
    Type: Grant
    Filed: November 25, 2014
    Date of Patent: July 17, 2018
    Assignee: Mitsubishi Hitachi Power Systems, Ltd.
    Inventors: Akira Yoshinari, Yuting Wang
  • Publication number: 20180190883
    Abstract: In various embodiments, a layer of organic encapsulant is provided over a surface of an ultraviolet (UV) light-emitting semiconductor die, and at least a portion of the encapsulant is exposed to UV light to convert at least some of said portion of the encapsulant into non-stoichiometric silica material. The non-stoichiometric silica material includes silicon, oxygen, and carbon, and a carbon content of the non-stoichiometric silica material is greater than 1 ppm and less than 40 atomic percent.
    Type: Application
    Filed: February 16, 2018
    Publication date: July 5, 2018
    Inventors: Ken Kitamura, Masato Toita, Hironori Ishii, Yuting Wang, Leo J. Schowalter, Jianfeng Chen, James R. Grandusky
  • Patent number: 9935247
    Abstract: In various embodiments, a layer of organic encapsulant is provided over a surface of an ultraviolet (UV) light-emitting semiconductor die, and at least a portion of the encapsulant is exposed to UV light to convert at least some of said portion of the encapsulant into non-stoichiometric silica material. The non-stoichiometric silica material includes silicon, oxygen, and carbon, and a carbon content of the non-stoichiometric silica material is greater than 1 ppm and less than 40 atomic percent.
    Type: Grant
    Filed: July 23, 2015
    Date of Patent: April 3, 2018
    Assignee: CRYSTAL IS, INC.
    Inventors: Ken Kitamura, Masato Toita, Hironori Ishii, Yuting Wang, Leo J. Schowalter, Jianfeng Chen, James R. Grandusky
  • Publication number: 20170159155
    Abstract: To provide a Nb-silicide based composite achieving both mechanical characteristics and toughness at high levels in an ultrahigh temperature region (1200° C. or more) as well as a high-temperature component and a high-temperature heat engine which employ the same. The Nb-silicide based composite according to the present invention includes 13 to 23 at % of Si, 2.0 to 10 at % of Cr, 5.0 to 23 at % of Ti, 0.0 to 6.0 at % of Al, 0.10 to 8.0 at % of Zr, 1.0 to 8.0 at % of Hf, 0.0 to 2.0 at % of W, 0.10 to 6.0 at % of Sn, 3.1 to 8.0 at % of Mo, 0.20 to 5.0 at % of B, and the balance being Nb and inevitable impurities.
    Type: Application
    Filed: May 25, 2015
    Publication date: June 8, 2017
    Inventor: Yuting WANG
  • Publication number: 20170087262
    Abstract: In various embodiments, an illumination device features an ultraviolet (UV) light-emitting device at least partially surrounded by an encapsulant. A barrier layer is disposed between the light-emitting device and the encapsulant and is configured to substantially prevent UV light emitted by the light-emitting device from entering the encapsulant.
    Type: Application
    Filed: December 8, 2016
    Publication date: March 30, 2017
    Inventors: Masato Toita, Jianfeng Chen, Yuxin Li, Yuting Wang, Hironori Ishii, Ken Kitamura
  • Patent number: 9600330
    Abstract: A method and system for regulation and control of a multi-core CPU includes receiving an operating command associated with regulation and control of the multi-core CPU, responding to the operating command, and performing regulation and control on the CPU cores of the multi-core CPU via a bottom layer core interface according to a preset CPU regulation and control mode. Thereby, a working state of every CPU core of a multi-core CPU is regulated and controlled, processing capability of the multi-core CPU is improved, and energy and electric power are saved.
    Type: Grant
    Filed: July 4, 2013
    Date of Patent: March 21, 2017
    Assignee: HUIZHOU TCL MOBILE COMMUNICATION CO., LTD.
    Inventors: Lian Liu, Yuting Wang, Xiaoyong Wu, Xiangjun Zhong
  • Patent number: 9574451
    Abstract: An object of the present invention is to provide a Ni-based superalloy, especially for a conventional casting, having a good balance among high temperature strength, corrosion resistance and oxidation resistance, as compared to a conventional material. The Ni-based superalloy comprises Cr, Co, Al, Ti, Ta, W, Mo, Nb, C, B, and inevitable impurities, the balance being Ni, the Ni-based superalloy having a superalloy composition comprising, by mass, 13.1 to 16.0% Cr, 11.1 to 20.0% Co, 2.30 to 3.30% Al, 4.55 to 6.00% Ti, 2.50 to 3.50% Ta, 4.00 to 5.50% W, 0.10 to 1.20% Mo, 0.10 to 0.90% Nb, 0.05 to 0.20% C, and 0.005 to 0.02% B.
    Type: Grant
    Filed: April 15, 2015
    Date of Patent: February 21, 2017
    Assignee: Mitsubishi Hitachi Power Systems, Ltd.
    Inventors: Yuting Wang, Akira Yoshinari
  • Patent number: 9548431
    Abstract: In various embodiments, an illumination device features an ultraviolet (UV) light-emitting device at least partially surrounded by an encapsulant and having a rigid lens. Downward forces is applied while the encapsulant is at least partially cured to substantially prevent partial or full detachment of the rigid lens from the light-emitting device, and/or substantially suppress formation of bubbles between the light-emitting device and the rigid lens.
    Type: Grant
    Filed: February 16, 2016
    Date of Patent: January 17, 2017
    Assignee: CRYSTAL IS, INC.
    Inventors: Masato Toita, Jianfeng Chen, Yuxin Li, Yuting Wang, Hironori Ishii, Ken Kitamura