Abstract: A semiconductor module includes an IGBT and a MOSFET. The IGBT is made of a silicon semiconductor. The MOSFET is made of a wide-bandgap semiconductor having a wider bandgap than the silicon semiconductor. The IGBT and the MOSFET are connected in parallel to each other to form a semiconductor element pair. The IGBT has a greater surface area than the MOSFET. The semiconductor module is configured to operate in a region that includes a low-current region and a high-current region. Electric current flowing through the semiconductor element pair is higher in the high-current region than in the low-current region. In the low-current region, the on-resistance of the MOSFET is lower than the on-resistance of the IGBT. In contrast, in the high-current region, the on-resistance of the IGBT is lower than the on-resistance of the MOSFET.

Abstract: A semiconductor module of an electric power converter includes an IGBT and a MOSFET which are connected in parallel to each other and provided on the same lead frame, either one of the IGBT and the MOSFET is a first switching element and the remaining one is a second switching element, and the conduction path of the second switching element is disposed at a position that is separated from a conduction path of the first switching element in the same lead frame.

Abstract: A power conversion apparatus includes a first semiconductor element pair that includes a MOSFET made of wide bandgap semiconductor material and a wide bandgap diode made of wide bandgap semiconductor material which is reverse parallel-connected to the MOSFET, a second semiconductor element pair that includes an IGBT made of silicon semiconductor material and a silicon diode made of silicon semiconductor material which is reverse parallel-connected to the IGBT, and a control circuit section for controlling switching operation of the MOSFET and the IGBT. The first and second semiconductor element pairs are connected in series to each other.

Abstract: A semiconductor module including a semiconductor element, a controller, a cooler, and a temperature sensor are included. The controller is connected to the semiconductor module and controls switching operation of the semiconductor element. The temperature sensor measures a coolant temperature, which is a temperature of the coolant. The controller controls turn-off speed of the semiconductor element based on the coolant temperature. The controller increases the turn-off speed as the coolant temperature rises.

Abstract: An electric power converter includes a semiconductor module, a cooling pipe, a pressing member and a supporting member. A pair of supporting wall portions is disposed so as to sandwich the semiconductor module, the cooling pipe, and the pressing member in an overlapping direction. A semiconductor element includes a small-sized semiconductor element, and a large-sized semiconductor element of which an outer shape is larger than that of the small-sized semiconductor element when projected onto a plane parallel to the overlapping direction. Within the semiconductor module, the large-sized semiconductor element is disposed closer to a connecting end portion side where a connecting portion of the pair of supporting wall portions are disposed than the small-sized semiconductor elements is.

Abstract: An electric power converter includes a semiconductor module, a cooling pipe, a pressing member and a supporting member. A pair of supporting wall portions is disposed so as to sandwich the semiconductor module, the cooling pipe, and the pressing member in an overlapping direction. A semiconductor element includes a small-sized semiconductor element, and a large-sized semiconductor element of which an outer shape is larger than that of the small-sized semiconductor element when projected onto a plane parallel to the overlapping direction. Within the semiconductor module, the large-sized semiconductor element is disposed closer to a connecting end portion side where a connecting portion of the pair of supporting wall portions are disposed than the small-sized semiconductor elements is.

Abstract: An electric power converter apparatus includes a plurality of semiconductor modules connected in parallel, with respective current-carrying electrode terminals of the modules being connected to a common branch point via connecting leads having respectively different values of impedance, such that the impedance values decrease in accordance with increased degrees of effectiveness of cooling the respective semiconductor modules, thereby reducing variations in operating temperature between the modules.

Abstract: An electric power converter apparatus includes a plurality of semiconductor modules connected in parallel, with respective current-carrying electrode terminals of the modules being connected to a common branch point via connecting leads having respectively different values of impedance, such that the impedance values decrease in accordance with increased degrees of effectiveness of cooling the respective semiconductor modules, thereby reducing variations in operating temperature between the modules.