Abstract: A chemical-mechanical polishing (“CMP”) composition (P) comprising (A) inorganic particles, organic particles, or a mixture or composite thereof, (B) at least one type of A/-heterocyclic compound as corrosion inhibitor, (C) at least one type of a further corrosion inhibitor selected from the group consisting of: (C1) an acetylene alcohol, and (C2) a salt or an adduct of (C2a) an amine, and (C2b) a carboxylic acid comprising an amide moiety, (D) at least one type of an oxidizing agent, (E) at least one type of a complexing agent, and (F) an aqueous medium.

Abstract: A chemical mechanical polishing (CMP) composition, comprising (A) at least one type of inorganic particles which are dispersed in the liquid medium (C), (B) at least one type of polymer particles which are dispersed in the liquid medium (C), (C) a liquid medium, wherein the zeta-potential of the inorganic particles (A) in the liquid medium (C) and the zeta-potential of the polymer particles in the liquid medium (C) are of same signs.

Abstract: A chemical-mechanical polishing composition comprising: (a) at least one type of abrasive particles; (b) at least two oxidizing agents; (c) at least one pH adjusting agent; and (d) deionized water; (e) optionally comprising at least one antioxidant, and a method for the chemical-mechanical planarization of a substrate containing at least one copper layer, at least one ruthenium layer, and at least one tantalum layer comprising the steps of (1) providing the said chemical-mechanical polishing composition; (2) contacting the substrate surface to be polished with the chemical-mechanical polishing composition and a polishing pad; and (3) chemically and mechanically polishing the substrate surface by way of moving the polishing pad relative to the substrate.

Abstract: An aqueous polishing composition comprising (A) abrasive particles and (B) an amphiphilic nonionic surfactant selected from the group consisting of water-soluble or water-dispersible surfactants having (b1) hydrophobic groups selected from the group consisting of branched alkyl groups having 10 to 18 carbon atoms; and (b2) hydrophilic groups selected from the group consisting of polyoxyalkylene groups comprising (b21) oxyethylene monomer units and (b22) substituted oxyalkylene monomer units wherein the substituents are selected from the group consisting of alkyl, cycloalkyl, or aryl, alkyl-cycloalkyl, alkyl-aryl, cycloalkyl-aryl and alkyl-cycloalkyl-aryl groups, the said polyoxyalkylene group containing the monomer units (b21) and (b22) in random, alternating, gradient and/or blocklike distribution; a CMP process for substrates having patterned or unpatterned low-k or ultra-low-k dielectric layers making use of the said aqueous polishing composition; and the use of the said aqueous polishing composition for m

Abstract: A process for the manufacture of semiconductor devices comprising the chemical-mechanical polishing of a substrate or layer containing at least one III-V material in the presence of a chemical-mechanical polishing composition (Q1) comprising (A) inorganic particles, organic particles, or a mixture or composite thereof, (B) at least one amphiphilic non-ionic surfactant having (b1) at least one hydrophobic group; and (b2) at least one hydrophilic group selected from the group consisting of polyoxyalkylene groups comprising (b22) oxyalkylene monomer units other than oxyethylene monomer units; and (M) an aqueous medium.

Abstract: An aqueous chemical mechanical polishing (CMP) agent (A) comprising solid particles (a1) containing (a11) a corrosion inhibitor for metals, and (a12) a solid material, the said solid particles (a1) being finely dispersed in the aqueous phase; and its use in a process for removing a bulk material layer from the surface of a substrate and planarizing the exposed surface by chemical mechanical polishing until all material residuals are removed from the exposed surface, wherein the CMP agent exhibits at the end of the chemical mechanical polishing, without the addition of supplementary materials, —the same or essentially the same static etch rate (SER) as at its start and a lower material removal rate (MRR) than at its start, —a lower SER than at its start and the same or essentially the same MRR as at its start or—a lower SER and a lower MRR than at its start; such that the CMP agent exhibits a soft landing behavior.

Abstract: An aqueous polishing agent, comprising, as the abrasive, at least one kind of polymer particles (A) finely dispersed in the aqueous phase and having at their surface a plurality of at least one kind of functional groups (a1) capable of interacting with the metals and/or the metal oxides on top of the surfaces to be polished and forming complexes with the said metals and metal cations, the said polymer particles (A) being preparable by the emulsion or suspension polymerization of at least one monomer containing at least one radically polymerizable double bond in the presence of at least one oligomer or polymer containing a plurality of functional groups (a1); graft copolymers preparable by the emulsion or suspension polymerization of at least one monomer containing at least one radically polymerizable double bond in the presence of at least one oligomeric or polymeric aminotriazine-polyamine condensate; and a process for the chemical and mechanical polishing of patterned and unstructured metal surfaces making

Abstract: A chemical mechanical polishing (CMP) composition (Q) comprising (A) Inorganic particles, organic particles, or a mixture or composite thereof, wherein the particles are cocoon-shaped (B) a non-ionic surfactant, (C) a carbonate or hydrogen carbonate salt, (D) an alcohol, and (M) an aqueous medium.

Abstract: Chemical mechanical polishing composition is provided. The composition comprises (A) inorganic particles, organic particles, or a mixture or composite thereof, (B) a protein, and (C) an aqueous medium.

Abstract: A post chemical-mechanical-polishing (post-CMP) cleaning composition comprising: (A) at least one compound comprising at least one thiol (—SH), thioether (—SR1) or thiocarbonyl (>C?S) group, wherein R1 is alkyl, aryl, alkylaryl or arylalkyl, (B) at least one sugar alcohol which contains at least three hydroxyl (—OH) groups and does not comprise any carboxylic acid (—COOH) or carboxylate (—COO—) groups, and (C) an aqueous medium.

Abstract: A chemical mechanical polishing (CMP) composition comprising a specific heteropolyacid Abstract A chemical-mechanical polishing (CMP) composition comprising: (A) inorganic particles, organic particles, or a mixture thereof, (B) a heteropolyacid of the formula HaXbPsMOyVzOc wherein X=any cation other than H 8<y<18 8<z<14 56<c<105 a+b=2c?6y?5(3+z) b>0 and a>0 (formula I) or a salt thereof, and, (C) an aqueous medium.

Abstract: An aqueous CMP agent, comprising (A) solid polymer particles interacting and forming strong complexes with the metal of the surfaces to be polished; (B) a dissolved organic non-polymeric compound interacting and forming strong, water-soluble complexes with the metal and causing an increase of the material removal rate MRR and the static etch rate SER with increasing concentration of the compound (B); and (C) a dissolved organic non-polymeric compound interacting and forming slightly soluble or insoluble complexes with the metal, which complexes are capable of being adsorbed by the metal surfaces, and causing a lower increase of the MRR than the compound (B) and a lower increase of the SER than the compound (B) or no increase of the SER with increasing concentration of the compound (C); a CMP process comprising selecting the components (A) to (C) and the use of the CMP agent and process for polishing wafers with ICs.

Abstract: A method for chemical mechanical planarization of ruthenium is provided. A semiconductor substrate comprising ruthenium is contacted with a chemical mechanical polishing system comprising an oxidizing particle, an abrasive, a polishing pad and a liquid carrier. The pH of the polishing composition is about 8 to 12. A high ruthenium removal rate for the inventive slurry was observed. The disclosed oxidizing particle advantageously improves the polishing speed of ruthenium under low polishing pressure and decreases the scratches generated on low-k material.

Abstract: (A) solid polymer particles being finely dispersed in the aqueous phase and containing pendant functional groups (a1) capable of strongly interacting and forming strong complexes with the metal of the surfaces to be polished, and pendant functional groups (a2) capable of interacting less strongly with the metal of the surfaces to be polished than the functional groups (a1); and (B) an organic non-polymeric compound dissolved in the aqueous phase and capable of interacting and forming strong, water-soluble complexes with the metal of the surfaces to be polished and causing an increase of the material removal rate MRR and the static etch rate SER of the metal surfaces to be polished with increasing concentration of the compound (B); a CMP process comprising selecting (A) and (B) and the use of the CMP agent and process for polishing wafers with ICs.

Abstract: A chemical mechanical polishing (CMP) composition (Q) comprising (A) Inorganic particles, organic particles, or a mixture or composite thereof, wherein the particles are cocoon-shaped (B) a non-ionic surfactant, (C) an aromatic compound comprising at least one acid group (Y), or a salt thereof, and (M) an aqueous medium.

Abstract: A chemical-mechanical polishing (CMP) composition comprising (A) inorganic particles, organic particles, or a composite or mixture thereof, (B) a polymeric polyamine or a salt thereof comprising at least one type of pendant group (Y) which comprises at least one moiety (Z), wherein (Z) is a carboxylate (—COOR1), sulfonate (—SO3R2), sulfate (—O—SO3R3), phosphonate (—P(?O) (OR4)(OR5)), phosphate (—O—P(?O)(OR6)(OR7)), carboxylic acid (—COOH), sulfonic acid (—SO3H), sulfuric acid (—O—SO3—), phosphonic acid (—P(?O)(OH)2), phosphoric acid (—O—P(?O)(OH)2) moiety, or their deprotonated forms, R1 is alkyl, aryl, alkylaryl, or arylalkyl R2 is alkyl, aryl, alkylaryl, or arylalkyl, R3 is alkyl, aryl, alkylaryl, or arylalkyl, R4 is alkyl, aryl, alkylaryl, or arylalkyl, R5 is H, alkyl, aryl, alkylaryl, or arylalkyl, R6 is alkyl, aryl, alkylaryl, or arylalkyl, R7 is H, alkyl, aryl, alkylaryl, or arylalkyl, and (C) an aqueous medium.

Abstract: Method for manufacturing semiconductor wafers having at least one through-base wafer via, the said method comprising the steps of (1) providing a semiconductor wafer having at least one electrically conductive via comprising an electrically conductive metal and extending from the front side of the semiconductor wafer at least partially through the semiconductor wafer; (2) affixing the frontside of the semiconductor wafer to a carrier; (3) contacting the backside of the semiconductor wafer with a polishing pad and an aqueous chemical mechanical polishing composition having a pH of equal to or greater than 9 and comprising (A) abrasive particles; (B) an oxidizing agent containing at least one peroxide group; and (C) an additive acting both as metal chelating agent and metal corrosion inhibitor; (4) chemically mechanically polishing the backside of the semiconductor wafer until at least one electrically conductive via is exposed. Preferably, the additive (C) is 1,2,3-triazole.

Abstract: This invention relates to a chemical composition for chemical mechanical polishing (CMP) of substrates that are widely used in the semiconductor industry. The inventive chemical composition contains additives that are capable of improving consistency of the polishing performance and extending the lifetime of a polishing pad.

Abstract: An aqueous polishing composition comprising (A) abrasive particles and (B) an amphiphilic nonionic surfactant selected from the group consisting of water-soluble or water-dispersible surfactants having (b1) hydrophobic groups selected from the group consisting of branched alkyl groups having 10 to 18 carbon atoms; and (b2) hydrophilic groups selected from the group consisting of polyoxyalkylene groups comprising (b21) oxyethylene monomer units and (b22) substituted oxyalkylene monomer units wherein the substituents are selected from the group consisting of alkyl, cycloalkyl, or aryl, alkyl-cycloalkyl, alkyl-aryl, cycloalkyl-aryl and alkyl-cycloalkyl-aryl groups, the said polyoxyalkylene group containing the monomer units (b21) and (b22) in random, alternating, gradient and/or blocklike distribution; a CMP process for substrates having patterned or unpatterned low-k or ultra-low-k dielectric layers making use of the said aqueous polishing composition; and the use of the said aqueous polishing composition for m

Abstract: A chemical mechanical polishing (CMP) composition Abstract Use of a chemical mechanical polishing (CMP) composition comprising (A) inorganic particles, organic particles, or a mixture thereof, (B) a heteropolyacid or a salt thereof, (C) a salt comprising chloride, fluoride, bromide, or a mixture thereof as anion, and (D) an aqueous medium, for polishing a substrate comprising a self-passivating metal, germanium, nickel phosphorous (NiP), or a mixture thereof.