Abstract: An aqueous polishing composition having a pH of 3 to 11 and comprising (A) abrasive particles which are positively charged when dispersed in an aqueous medium free from component (B) and of a pH of 3 to 9 as evidenced by the electrophoretic mobility; (B) anionic phosphate dispersing agents; and (C) a polyhydric alcohol component selected from the group consisting of (c1) water-soluble and water-dispersible, aliphatic and cycloaliphatic, monomeric, dimeric and oligomeric polyols having at least 4 hydroxy groups; (c2) a mixture consisting of (c21) water-soluble and water-dispersible, aliphatic and cycloaliphatic polyols having at least 2 hydroxy groups; and (c22) water-soluble or water-dispersible polymers selected from linear and branched alkylene oxide homopolymers and copolymers (c221); and linear and branched, aliphatic and cycloaliphatic poly(N-vinylamide) homopolymers and copolymers (c222); and (c3) mixtures of (c1) and (c2); and a process for polishing substrates for electrical, mechanical and optical de

Abstract: An aqueous polishing composition comprising (A) at least one water-soluble or water-dispersible compound selected from the group consisting of N-substituted diazenium dioxides and N?-hydroxy-diazenium oxide salts; and (B) at least one type of abrasive particles; the use of the compounds (A) for manufacturing electrical, mechanical and optical devices and a process for polishing substrate materials for electrical, mechanical and optical devices making use of the aqueous polishing composition.

Abstract: A chemical mechanical polishing (CMP) composition comprising a specific heteropolyacid Abstract A chemical-mechanical polishing (CMP) composition comprising: (A) inorganic particles, organic particles, or a mixture thereof, (B) a heteropolyacid of the formula HaXbPsMOyVzOc wherein X=any cation other than H 8<y<18 8<z<14 56<c<105 a+b=2c?6y?5(3+z) b>0 and a>0 (formula I) or a salt thereof, and, (C) an aqueous medium.

Abstract: An aqueous polishing composition has been found, the said aqueous polishing composition comprising (A) at least one type of abrasive particles which are positively charged when dispersed in an aqueous medium free from component (B) and having a pH in the range of from 3 to 9 as evidenced by the electrophoretic mobility; (B) at least one water-soluble polymer selected from the group consisting of linear and branched alkylene oxide homopolymers and copolymers; and (C) at least one anionic phosphate dispersing agent; and a process for polishing substrate materials for electrical, mechanical and optical devices making use of the aqueous polishing composition.

Abstract: CMP process for substrates containing silicon oxide dielectric films and polysilicon and/or silicon nitride films comprising the steps of (1) contacting the substrate with an aqueous composition containing (A) abrasive particles which are positively charged when dispersed in an aqueous medium having a pH in the range of from 3 to 9; (B) a water-soluble or water-dispersible linear or branched alkylene oxide homopolymer or copolymer; and (C) a water-soluble or water-dispersible polymer selected from (c1) aliphatic and cycloaliphatic poly(N-vinylamide) homopolymers and copolymers, (c2) homopolymers and copolymers of acrylamide monomers of the general formulas I and II: H2C?C(—R)—C(=0)-N(—R1)(—R2) (I), H2C?C(—R)—C(=0)-R3 (II), wherein the variables have the following meaning R hydrogen atom, fluorine atom, chlorine atom, nitrile group, or organic residue; R1 and R2 hydrogen atom or organic residue; R3 saturated N-heterocyclic ring; (c3) cationic polymeric flocculants; and (c4) mixtures thereof; (2) polishing the

Abstract: An aqueous polishing composition comprising (A) abrasive particles which are positively charged when dispersed in an aqueous medium having a pH in the range of from 3 to 9 as evidenced by the electrophoretic mobility; (B) water-soluble and water-dispersible hydroxy group containing components selected from (b1) aliphatic and cycloaliphatic hydroxycarboxylic acids, wherein the molar ratio of hydroxy groups to carboxylic acid groups is at least 1; (b2) esters and lactones of the hydroxycarboxylic acids (b1) having at least one hydroxy group; and (b3) mixtures thereof; and (C) water-soluble and water-dispersible polymer components selected from (c1) linear and branched alkylene oxide polymers; (c2) linear and branched, aliphatic and cycloaliphatic poly(N-vinylamide) polymers; and (c3) cationic polymeric flocculents having a weight average molecular weight of less than 100,000 Dalton.; and a process for polishing substrate materials for electrical, mechanical and optical devices.

Abstract: A chemical-mechanical polishing composition comprising: (a) at least one type of abrasive particles; (b) at least two oxidizing agents; (c) at least one pH adjusting agent; and (d) deionized water; (e) optionally comprising at least one antioxidant, and a method for the chemical-mechanical planarization of a substrate containing at least one copper layer, at least one ruthenium layer, and at least one tantalum layer comprising the steps of (1) providing the said chemical-mechanical polishing composition; (2) contacting the substrate surface to be polished with the chemical-mechanical polishing composition and a polishing pad; and (3) chemically and mechanically polishing the substrate surface by way of moving the polishing pad relative to the substrate.

Abstract: An aqueous polishing agent, comprising, as the abrasive, at least one kind of polymer particles (A) finely dispersed in the aqueous phase and having at their surface a plurality of at least one kind of functional groups (al) capable of interacting with the metals and/or the metal oxides on top of the surfaces to be polished and forming complexes with the said metals and metal cations, the said polymer particles (A) being preparable by the emulsion or suspension polymerization of at least one monomer containing at least one radically polymerizable double bond in the presence of at least one oligomer or polymer containing a plurality of functional groups (a1); graft copolymers preparable by the emulsion or suspension polymerization of at least one monomer containing at least one radically polymerizable double bond in the presence of at least one oligomeric or polymeric aminotriazine-polyamine condensate; and a process for the chemical and mechanical polishing of patterned and unstructured metal surfaces making

Abstract: Abrasive articles containing solid abrasive particles (A) selected from the group consisting of inorganic particles, organic particles and inorganic-organic hybrid particles (a1) having an average primary particle size of from 1 to 500 nm as determined by laser light diffraction and having electron donor groups (a2) chemically bonded to their surface are provided. The said solid abrasive particles (A) are distributed throughout or on top of or throughout and on top of a solid matrix (B). A method for manufacturing abrasive articles and a method for processing substrates useful for fabricating electrical and optical devices are provided. The said methods make use of the said abrasive articles.

Abstract: A process for removing a bulk material layer from a substrate and planarizing the exposed surface by CMP by (1) providing an CMP agent exhibiting at the end of the chemical mechanical polishing, without the addition of supplementary materials, the same SER as at its start and a lower MRR than at its start,—an SER which is lower than the initial SER and an MRR which is the same or essentially the same as the initial MRR or a lower SER and a lower MRR than at its start; (2) contacting the surface of the bulk material layer with the CMP agent; (3) the CMP of the bulk material layer with the CMP agent; and (4) continuing the CMP until all material residuals are removed from the exposed surface; and a CMP agent and their use for manufacturing electrical and optical devices.

Abstract: An aqueous chemical mechanical polishing (CMP) agent (A) comprising solid particles (a1) containing (a11) a corrosion inhibitor for metals, and (a12) a solid material, the said solid particles (a1) being finely dispersed in the aqueous phase; and its use in a process for removing a bulk material layer from the surface of a substrate and planarizing the exposed surface by chemical mechanical polishing until all material residuals are removed from the exposed surface, wherein the CMP agent exhibits at the end of the chemical mechanical polishing, without the addition of supplementary materials, —the same or essentially the same static etch rate (SER) as at its start and a lower material removal rate (MRR) than at its start, —a lower SER than at its start and the same or essentially the same MRR as at its start or—a lower SER and a lower MRR than at its start; such that the CMP agent exhibits a soft landing behavior.

Abstract: A chemical mechanical polishing (CMP) composition, comprising (A) at least one type of inorganic particles which are dispersed in the liquid medium (C), (B) at least one type of polymer particles which are dispersed in the liquid medium (C), (C) a liquid medium, wherein the zeta-potential of the inorganic particles (A) in the liquid medium (C) and the zeta-potential of the polymer particles in the liquid medium (C) are of same signs.

Abstract: Aqueous dispersion comprising cerium oxide and silicon dioxide, obtainable by first mixing a cerium oxide starting dispersion and a silicon dioxide starting dispersion while stirring, and then dispersing at a shear rate of 10000 to 30000 s?1, wherein a) the cerium oxide starting dispersion—contains 0.5 to 30% by weight of cerium oxide particles as the solid phase, —a d5o of the particle size distribution of 10 to 100 nm—and has a pH of 1 to 7, and b) the silicon dioxide starting dispersion—contains 0.1 to 30% by weight of colloidal silicon dioxide particles as the solid phase, has a d5o of the particle size distribution of 3 to 50 nm and has a pH of 6 to 11.5, d) with the proviso that the d5o of the particle size distribution of the cerium oxide particles is greater than that of the silicon dioxide particles, the cerium oxide/silicon dioxide weight ratio is >1 and the amount of cerium oxide starting dispersion is such that the zeta potential of the dispersion is negative.

Abstract: Raspberry-type coated particles comprising a core selected from the group consisting of metal oxides of Si, Ti, Zr, Al, Zn and mixtures thereof with a core size of from 20 to 100 nm wherein the core is coated with CeCO2 particles having a particle size below 10 nm; process for preparing raspberry type coated particles comprising the steps of i) providing a mixture containing: a) core particles selected from the group of metal oxides of Si, Ti, Zr, Al, Zn and mixtures thereof, with a particle size of from 20 to 100 nm; b) a water soluble Ce-salt and c) water; ii) adding an organic or inorganic base to the mixture of step i) at temperatures of from 10 to 90° C. and iii) aging the mixture at temperatures of from 10 to 90° C.; and polishing agents containing the particles and their use for polishing surfaces.

Abstract: An aqueous CMP agent, comprising (A) solid polymer particles interacting and forming strong complexes with the metal of the surfaces to be polished; (B) a dissolved organic non-polymeric compound interacting and forming strong, water-soluble complexes with the metal and causing an increase of the material removal rate MRR and the static etch rate SER with increasing concentration of the compound (B); and (C) a dissolved organic non-polymeric compound interacting and forming slightly soluble or insoluble complexes with the metal, which complexes are capable of being adsorbed by the metal surfaces, and causing a lower increase of the MRR than the compound (B) and a lower increase of the SER than the compound (B) or no increase of the SER with increasing concentration of the compound (C); a CMP process comprising selecting the components (A) to (C) and the use of the CMP agent and process for polishing wafers with ICs.

Abstract: (A) solid polymer particles being finely dispersed in the aqueous phase and containing pendant functional groups (a1) capable of strongly interacting and forming strong complexes with the metal of the surfaces to be polished, and pendant functional groups (a2) capable of interacting less strongly with the metal of the surfaces to be polished than the functional groups (a1); and (B) an organic non-polymeric compound dissolved in the aqueous phase and capable of interacting and forming strong, water-soluble complexes with the metal of the surfaces to be polished and causing an increase of the material removal rate MRR and the static etch rate SER of the metal surfaces to be polished with increasing concentration of the compound (B); a CMP process comprising selecting (A) and (B) and the use of the CMP agent and process for polishing wafers with ICs.

Abstract: A method for chemical mechanical planarization of ruthenium is provided. A semiconductor substrate comprising ruthenium is contacted with a chemical mechanical polishing system comprising an oxidizing particle, an abrasive, a polishing pad and a liquid carrier. The pH of the polishing composition is about 8 to 12. A high ruthenium removal rate for the inventive slurry was observed. The disclosed oxidizing particle advantageously improves the polishing speed of ruthenium under low polishing pressure and decreases the scratches generated on low-k material.

Abstract: This invention relates to a chemical composition for chemical mechanical polishing (CMP) of substrates that are widely used in the semiconductor industry. The inventive chemical composition contains additives that are capable of improving consistency of the polishing performance and extending the lifetime of a polishing pad.

Abstract: A chemical mechanical polishing slurry containing multiple oxidizers and nano abrasive particles (including engineered nano diamond particles) suitable for polishing multilayer substrate with tungsten and Ti/TiN barrier layers. The slurry contains no metallic catalyst and has low total abrasive particle content. The absence of metal ions can be advantageous for certain applications as certain metal ions may present contamination issues. A low total abrasive content may also lower the total defect counts, reduce the slurry waste treatment burden, and simplify the post CMP clean process.

Abstract: The present invention provides for a copper CMP slurry composition which comprises a complexing agent, an oxidizer, an abrasive and a passivating agent. The present invention also provides for a method of chemical mechanical planarization of a copper conductive structure which comprises administering the copper CMP slurry composition during the planarization process.