Abstract: A process and a device for fabricating a semiconductor device having a gate dielectric made of high-k material, includes a step of depositing, directly on the gate dielectric, a first layer of Si1?xGex, where 0.5<x?1, at a temperature substantially below the temperature at which a poly-Si is deposited by thermal chemical vapor deposition (CVD).

Abstract: A process and a device for fabricating a semiconductor device having a gate dielectric made of high-k material, includes a step of depositing, directly on the gate dielectric, a first layer of Si1-xGex, where 0.5<x<1, at a temperature substantially below the temperature at which a poly-Si is deposited by thermal chemical vapor deposition (CVD).

Abstract: A method for forming, by epitaxy, a heteroatomic single-crystal semiconductor layer on a single-crystal semiconductor wafer, the crystal lattices of the layer and of the wafer being different, including forming, before the epitaxy, in the wafer surface, at least one ring of discontinuities around a useful region.

Abstract: A method for forming on a Ge or Si monocrystalline substrate successive Si/Ge, Si/SiGe, or Si/SiGe/Ge layers for a Ge substrate and inversely for a Si substrate is described. Electrochemical treatment of the stack of layers to make the layers porous and form therein residual crystallites is also described. The invention may be used to provide devices having layers of planes of quantum drops.

Abstract: Provided is a novel method of cleaning a semiconductor process chamber having deposits on an inner surface thereof. The method involves: (a) introducing a cleaning gas comprising hydrogen chloride into the process chamber, wherein the cleaning gas is effective to react with and remove the deposits from the inner surface of the process chamber; (b) removing gas from the process chamber; and (c) monitoring at least a portion of the removed gas for a species indicative of an endpoint of the chamber cleaning. The invention allows for the cleaning of semiconductor process chambers in an efficient manner so as to reduce process down time and improve process throughput. The method can be applied to in-line analysis.

Abstract: A method of forming, on a single-crystal semiconductor substrate of a first material, quantum dots of a second material, including growing by vapor phase epitaxy the second material on the first material in optimal conditions adapted to ensuring a growth at a maximum controllable rate. In an initial step, a puff of a gas containing the second material is sent on the substrate, in conditions corresponding to a deposition rate much faster than the maximum controllable rate.

Abstract: The invention concerns a method which consists in: (a) stabilization of the monocrystalline silicon substrate temperature at a first predetermined temperature T1 of 400 to 500° C.; (b) chemical vapour deposition (CVD) of germanium at said first predetermined temperature T1 until a base germanium layer is formed on the substrate, with a predetermined thickness less than the desired final thickness; (c) increasing the CVD temperature from said first predetermined temperature T1 up to a second predetermined temperature T2 of 750 to 850° C.; and (d) carrying on with CVD of germanium at said second predetermined temperature T2 until the desired final thickness for the monocrystalline germanium final layer is obtained. The invention is useful for making semiconductor devices.

Abstract: The process consists in depositing, by chemical vapour deposition using a mixture of silicon and germanium precursor gases, a single-crystal layer of silicon or germanium on a germanium or silicon substrate by decreasing or increasing the temperature in the range 800-450° C. and at the same time by increasing the Si/Ge or Ge/Si weight ratio from 0 to 100% in the precursor gas mixture, respectively.

Abstract: The process comprises: etching, in a semiconductor substrate (2), at least one trench (3) with predetermined width and depth; depositing, on the substrate and in the trench, a stack of successive and alternate layers of Si1−xGex (0<x≦1) and Si (5-8), the number and the thickness of which depend on the final use intended for the heterostructure; and chemical-mechanical polishing in order to obtain a final heterostructure having a plane upper main surface, level with which the stack layers deposited in the trench are flush.

Abstract: A method of nitriding the gate oxide layer of a semiconductor device includes the chemical growth on a silicon substrate of a native silicon oxide layer ≦1 nm thick; treating said substrate coated with the native silicon oxide layer with gas NO at a temperature ≦700° C. and a pressure level ≦104 Pa to obtain a nitrided native silicon oxide layer; and the growth of the gate oxide layer. The method is applicable to PMOS devices. Further modifications and alternative embodiments of various aspects of the invention will be apparent to those skilled in the art in view of this description. Accordingly, this description is to be construed as illustrative only and is for the purpose of teaching those skilled in the art the general manner of carrying out the invention. It is to be understood that the forms of the invention shown and described herein are to be taken as the presently preferred embodiments.

Abstract: A method of forming, on a single-crystal semiconductor substrate of a first material, quantum dots of a second material, including growing by vapor phase epitaxy the second material on the first material in optimal conditions adapted to ensuring a growth at a maximum controllable rate. In an initial step, a puff of a gas containing the second material is sent on the substrate, in conditions corresponding to a deposition rate much faster than the maximum controllable rate.

Abstract: A method which includes, prior to depositing the encapsulating silicon layer: A) depositing on the Si1−xGex layer a thin film of amorphous or polycrystalline silicon, then in treating said silicon film with gas nitric oxide at a temperature between 450 to 600° C. and at a pressure level of 104 to 105 Pa to obtain a thin nitrided silicon film; or B) depositing on the Si1−xGex layer a thin film of amorphous or polycrystalline silicon and oxidizing the silicon film to form a surface film of silicon oxide less than 1 nm thick and optionally treating the oxidized amorphous or polycrystalline silicon film with nitric oxide as in A). The invention is applicable to CMOS semiconductors.

Abstract: The process consists in depositing, by chemical vapor deposition using a mixture of silicon and germanium precursor gases, a single-crystal layer of silicon or germanium on a germanium or silicon substrate by decreasing or increasing the temperature in the range 800-450.degree. C. and at the same time by increasing the Si/Ge or Ge/Si weight ratio from 0 to 100% in the precursor gas mixture, respectively.

Abstract: The process consists of depositing at least one layer of a doped material on a heated substrate placed in an enclosure, subjecting the substrate surface to the action of a molecular flux of the material, to the action of a doping particle beam and to the action of an electron beam.

Abstract: Process and apparatus for the growth of films of silicides of refractory metals and films obtained by this process.According to the invention, in order to grow a silicide film of a refractory metal on a silicon substrate, the latter is cleaned, then thermally degassed under an ultra-high vacuum by bringing the substrate to a given temperature between approximately 600.degree. C. and approximately 800.degree. C. A refractory metal is then evaporated on to the substrate at said temperature, after which the temperature is progressively lowered.Application to the production of electronic microcomponents.