Abstract: An optimization method comprising: (a) receiving a target value for power received at an antenna, (b) selecting a number of rectifier stages from a first range, and selecting a rectifier transistor drain current from a second range, (c) determining a computed value of the received power, (d) determining an input voltage at which the computed value of the received power matches the target value, (e) determining an output voltage based on the input voltage, the number of stages, and the transistor drain current, (f) when at least one additional value from the first and/or the second range remains to be selected, incrementing the number of stages and/or the transistor drain current, and repeating steps (c) to (e), and (g) when all values from the first and the second range are selected, determining a final number of stages and a final transistor drain current at which the output voltage is highest.

Abstract: Semiconductor component or device is provided which includes a current barrier element and for which the impedance may be tuned (i.e. modified, changed, etc.) using a focused heating source.

Abstract: Semiconductor component or device is provided which includes a current barrier element and for which the impedance may be tuned (i.e. modified, changed, etc.) using a focused heating source.

Abstract: Semiconductor component or device is provided which includes a current barrier element and for which the impedance may be tuned (i.e. modified, changed, etc.) using a focused heating source.

Abstract: This invention pertains to a color coatings blender apparatus to be used for color composition customization for the application of color coatings on 2D and 3D surfaces. The apparatus is comprised of a main body and interchangeable inserts all with central blender chambers and primary and secondary ports, and interchangeable spindles; the configurations of which are governed by coating technical characteristics. This invention integrates gradient specific programmable computer digital processes to function as internal editors, manipulate information and present the operator with multiple options and production overrides. This invention will make data analysis more interactive by utilizing existing external software applications as editors and expanding the process of visual communications for multiple purposes. While the blender apparatus, complete with external selectable appurtenances, can be used manually, it can also be combined with a programmable computer for producing physical gradient layers.

Abstract: A method and apparatus is disclosed for performing a multi-equalization of a transmitted signal on a channel having varying characteristics comprising equalizing the transmitted signal using a plurality of setting defining a plurality of equalizing functions to provide a corresponding plurality of symbol signal, synchronizing each of the plurality of symbol signals to provide a plurality of synchronized signals, selecting at least one of the plurality of synchronized signals according to at least one transmission performance criterion and providing the selected one of the plurality of synchronized signals.

Abstract: In a method of data transmission according to one embodiment of the invention, data transitions on adjacent conductors are separated in time. In a method of data transmission according to another embodiment of the invention, signals on adjacent conductive paths pass through different alternating sequences of inversions and regenerations. In a method of data transmission according to a further embodiment of the invention, data transitions having the same clock dependence are separated in space.

Abstract: Semiconductor component or device is provided which includes a current barrier element and for which the impedance may be tuned (i.e. modified, changed, etc.) using a focused heating source.

Abstract: A communications bus enables communication of data signals in a parallel processing system having a plurality of substantially identical cells, each cell having an access point for transmitting data signals into the communications bus. The communications bus includes a plurality of parallel channels, and at least one channel crossover point associated with each cell. Each crossover point implements a regular change in a channel order of the communications bus, such that each access point is coupled to a channel of the communications bus. Propagation delays are reduced by inserting buffers at regular intervals along the length of each channel. An output buffer at a downstream boundary of each power domain of the system prevents undesired currents due to voltage mismatch. The propagation direction of data signals away from the access point, and propagation of data to an adjacent downstream cell can be controlled to reduce bus traffic and power consumption.

Abstract: A method and apparatus is disclosed for performing a multi-equalization of a transmitted signal on a channel having varying characteristics comprising equalizing the transmitted signal using a plurality of setting defining a plurality of equalizing functions to provide a corresponding plurality of symbol signal, synchronizing each of the plurality of symbol signals to provide a plurality of synchronized signals, selecting at least one of the plurality of synchronized signals according to at least one transmission performance criterion and providing the selected one of the plurality of synchronized signals.

Abstract: Semiconductor component or device is provided which includes a current barrier element and for which the impedance may be tuned (i.e. modified, changed, etc.) using a focused heating source.

Abstract: A method is provided for tuning (i.e. modifying, changing) the impedance of semiconductor components or devices using a focused heating source. The method may be exploited for finely tuning the impedance of semiconductor components or devices, by modifying the dopant profile of a region of low dopant concentration (i.e. increasing the dopant concentration) by diffusion of dopants from adjacent regions of higher dopant concentration through the melting action of a focused heating source, for example a laser. The present invention is in particular directed to the use of lasers in relation to circuits for the creation of conductive links and pathways where none existed before. The present invention more particularly relates to a means wherein impedance modification (i.e. trimming or tuning) may advantageously be carried out as a function of the location of one or more conductive bridge(s) along the length of a gap region.

Abstract: A miniaturized body electronic implant for providing artificial vision to a blind person or for other uses as neuromuscular sensors and microstimulators. The implant has a high resolution electrode array connected to a chip integrating implant stimulation and monitoring circuits, mounted on the back of the electrode array. The implant is powered by and communicates with an external unit through an inductive bi-directional link.

Abstract: A miniaturized body electronic implant for providing artificial vision to a blind person or for other uses as neuro-muscular sensors and microstimulators. The implant has a high resolution electrode array connected to a chip integrating implant stimulation and monitoring circuits, mounted on the back of the electrode array. The implant is powered by and communicates with an external unit through an inductive bi-directional link.

Abstract: A method is provided for tuning (i.e. modifying, changing) the impedance of semiconductor components or devices using a focused heating source. The method may be exploited for finely tuning the impedance of semiconductor components or devices, by modifying the dopant profile of a region of low dopant concentration (i.e. increasing the dopant concentration) by diffusion of dopants from adjacent regions of higher dopant concentration through the melting action of a focused heating source, for example a laser. The present invention is in particular directed to the use of lasers in relation to circuits for the creation of conductive links and pathways where none existed before. The present invention more particularly relates to a means wherein impedance modification (i.e. trimming or tuning) may advantageously be carried out as a function of the location of one or more conductive bridge(s) along the length of a gap region.

Abstract: A highly robust fault tolerant scan chain is designed for scanning (and/or controlling a configuration of) a parallel processing system. The scan chain implements parallel redundant scan chains that follow physically diverse paths through the parallel processing system. For each IC under test, a set of redundant TAPs perform a boundary scan, and the test results are combined by voting. The TAPs of each set are physically diverse, in that they are physically located in separate power domains of the parallel processing system. As a result, the scan chain is robust to faults affecting power and/or control signal supply to any one power domain. Respective input and output dummy cells at opposite extreme ends of the scan chain provide a graceful separation and recombination of the redundant parallel scan chains, and so renders the architecture of the scan chain transparent to external boundary scan circuit elements.

Abstract: In a method of data transmission according to one embodiment of the invention, data transitions having the same clock dependence are separated in space. In one such method, signals of one set are transmitted on corresponding conductive paths in one direction, signals of another set are transmitted on corresponding conductive paths in the other direction, and adjacent conductive paths that each carry a signal of one set are separated by at least one conductive path that carries a signal of another set. In an apparatus according to one embodiment of the invention, the conductive paths are fabricated on a semiconductor substrate.

Abstract: A method is provided for tuning (i.e. modifying, changing) the impedance of semiconductor components or devices using a focused heating source. The method may be exploited for finely tuning the impedance of semiconductor components or devices, by modifying the dopant profile of a region of low dopant concentration (i.e. increasing the dopant concentration) by diffusion of dopants from adjacent regions of higher dopant concentration through the melting action of a focused heating source, for example a laser. The present invention is in particular directed to the use of lasers in relation to circuits for the creation of conductive links and pathways where none existed before. The present invention more particularly relates to a means wherein impedance modification (i.e. trimming or tuning) may advantageously be carried out as a function of the location of one or more conductive bridge(s) along the length of a gap region.

Abstract: A reticle and method simultaneously generate small- and large-scale circuit structures of a parallel processing system. The reticle includes at least two circuit traces having respective contact pads within an overlap zone of the reticle. Connectivity between a circuit trace of one reticle image with a circuit trace of an adjacent reticle image is controlled by varying the degree of overlap between the two images.

Abstract: A method is provided for tuning (i.e. modifying, changing) the impedance of semiconductor components or devices using a focused heating source. The method may be exploited for finely tuning the impedance of semiconductor components or devices, by modifying the dopant profile of a region of low dopant concentration (i.e. increasing the dopant concentration) by diffusion of dopants from adjacent regions of higher dopant concentration through the melting action of a focused heating source, for example a laser. The present invention is in particular directed to the use of lasers in relation to circuits for the creation of conductive links and pathways where none existed before. The present invention more particularly relates to a means wherein impedance modification (i.e. trimming or tuning) may advantageously be carried out as a function of the location of one or more conductive bridge(s) along the length of a gap region.