Patents by Inventor Zeynep Toros

Zeynep Toros has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Reduced leakage memory cell
    Patent number: 6574136
    Abstract: A random access memory cell (10) includes a first conductor line (12) and a second conductor line (14). A native device (16) is arranged to store charge. A high voltage threshold transistor (30) couples the native device to the first and second conductors.
    Type: Grant
    Filed: November 20, 2001
    Date of Patent: June 3, 2003
    Assignee: Broadcom Corporation
    Inventors: Cyrus Afghahi, Sami Issa, Zeynep Toros
  • REDUCED LEAKAGE MEMORY CELL
    Publication number: 20030095427
    Abstract: A random access memory cell (10) comprises a first conductor line (12) and a second conductor line (14). A native device (16) is arranged to store charge. A high voltage threshold transistor (30) couples the native device to the first and second conductors.
    Type: Application
    Filed: November 20, 2001
    Publication date: May 22, 2003
    Inventors: Morteza Cyrus Afghahi, Sami Issa, Zeynep Toros