Abstract: Techniques are provided herein to form semiconductor devices that include a layer across an upper surface of a dielectric fill between devices and configured to prevent or otherwise reduce recessing of the dielectric fill. In this manner, the layer may be referred to as a barrier layer or recess-inhibiting layer. The semiconductor regions of the devices extend above a subfin region that may be native to the substrate. These subfin regions are separated from one another using a dielectric fill that acts as a shallow trench isolation (STI) structure to electrically isolate devices from one another. A barrier layer is formed over the dielectric fill early in the fabrication process to prevent or otherwise reduce the dielectric fill from recessing during subsequent processing. The layer may include oxygen and a metal, such as aluminum.

Abstract: A method and apparatus for forming tungsten features in semiconductor devices is provided. The method includes exposing a top opening of a feature formed in a substrate to a physical vapor deposition (PVD) process to deposit a tungsten liner layer within the feature. The PVD process is performed in a first processing region of a first processing chamber and the tungsten liner layer forms an overhang portion, which partially obstructs the top opening of the feature. The substrate is transferred from the first processing region of the first processing chamber to a second processing region of a second processing chamber without breaking vacuum. The overhang portion is exposed to nitrogen-containing radicals in the second processing region to inhibit subsequent growth of tungsten along the overhang portion. The feature is exposed to a tungsten-containing precursor gas to form a tungsten fill layer over the tungsten liner layer within the feature.

Abstract: Fin trim plug structures with metal for imparting channel stress are described. In an example, an integrated circuit structure includes a fin including silicon, the fin having a top and sidewalls, wherein the top has a longest dimension along a direction. A first isolation structure is over a first end of the fin. A gate structure including a gate electrode is over the top of and laterally adjacent to the sidewalls of a region of the fin. The gate structure is spaced apart from the first isolation structure along the direction. A second isolation structure is over a second end of the fin, the second end opposite the first end, the second isolation structure spaced apart from the gate structure along the direction. The first isolation structure and the second isolation structure both include a dielectric material laterally surrounding an isolated metal structure.

Abstract: Disclosed are systems, methods, and non-transitory media for providing signaling consideration for wireless positioning with disjoint bandwidth segments. For instance, one or more indications of a preferred bandwidth configuration can be transmitted by a user equipment. Based on the one or more indications, the user equipment can receive a positioning configuration that indicates disjoint bandwidth segments containing a positioning reference signal based on the preferred bandwidth configuration. In response, the user equipment can then determine one or more positioning measurements based on the positioning reference signal in the disjoint bandwidth segments.

Abstract: Provided include a beam modulation apparatus for modulating an input light field and a projection system containing the apparatus. The input light field has a first light field and a second light field, having a difference of 90° in their polarization states. The apparatus includes a PBS prism, a first LCOS panel and a second LCOS panel. The first and the second LCOS panel are respectively over a side surface of the PBS prism opposing to an optical incident surface and an optical exit surface. Each LCOS panel comprises a plurality of pixels over a reflective surface thereof, with each pixel controllably switched on or off such that a polarity state of a light beam reflected by a portion of the reflective surface corresponding thereto is changed or remains unchanged. This beam modulation apparatus can be applied in a projection system, such as a laser TV projection system.

Abstract: The present invention features interferon-free therapies for the treatment of HCV. Preferably, the treatment is over a shorter duration of treatment, such as no more than 12 weeks. In one aspect, the treatment comprises administering at least two direct acting antiviral agents to a subject with HCV infection, wherein the treatment lasts for 12 weeks and does not include administration of either interferon or ribavirin, and said at least two direct acting antiviral agents comprise (a) Compound 1 or a pharmaceutically acceptable salt thereof and (b) Compound 2 or a pharmaceutically acceptable salt thereof.

Abstract: Techniques are provided herein to form semiconductor devices having epitaxial growth laterally extending between inner spacer structures to mitigate issues caused by the inner spacer structures either being too thick or too thin. A directional etch is performed along the side of a multilayer fin to create a relatively narrow opening for a source or drain region to increase the usable fin space for forming the inner spacer structures. After the inner spacer structures are formed around ends of the semiconductor layers within the fin, the exposed ends of the semiconductor layers are laterally recessed inwards from the outermost sidewalls of the inner spacer structures. Accordingly, the epitaxial source or drain region is grown from the recessed semiconductor ends and thus fills in the recessed regions between the spacer structures.

Abstract: A wireless communication method and a terminal device are provided. A first terminal device sends first information to a second terminal device, where the first information indicates that the second terminal device is to provide a first resource set, and the first resource set is used for the first terminal device to select a transmission resource.

Abstract: Methods and apparatus for sounding reference signal (SRS) power control for a wireless transmitter/receiver unit (WTRU) are disclosed. These methods and apparatus include methods and apparatus for carrier-specific and carrier-common SRS power control in WTRUs that utilize carrier aggregation techniques. These methods and apparatus also include methods and apparatus for SRS power control in WTRUs utilizing both carrier aggregation and time division multiplexing (TDM) techniques. Additionally, these methods and apparatus include methods and apparatus for SRS power control for WTRUs utilizing multiple input multiple output MIMO operation. Methods and apparatus for SRS overhead reduction and power management in a WTRU are also disclosed.

Abstract: The present disclosure provides interferon receptor agonists with improved safety profiles and therapeutic indices. The interferon receptor agonists are attenuated through masking and/or reduced receptor binding as compared to a wild-type interferon. IFN receptor agonists optionally further comprise a targeting moiety, e.g., a targeting moiety that recognizes a tumor- or immune cell-associated antigen and directs the interferon receptor agonist to a tumor site and/or tumor-reactive immune cells. The disclosure further provides pharmaceutical compositions comprising the interferon receptor agonists, and methods of use of the interferon receptor agonists in therapy, as well as nucleic acids encoding the interferon receptor agonists, recombinant cells that express the interferon receptor agonists and methods of producing the interferon receptor agonists.

Abstract: A bulk acoustic wave resonant structure includes a substrate, and a reflection structure, a first electrode layer, a piezoelectric layer and a second electrode layer, which are sequentially stacked on the substrate, wherein ring-shaped grooves are provided in the piezoelectric layer; and the grooves are located in an active area and are close to an edge of the active area.

Abstract: A computer-program product storing instructions which, when executed by a computer, cause the computer to receive an input data from a sensor, generate a training data set utilizing the input data, wherein the training data set is created by creating one or more copies of the input data and adding noise to the one or more copies, send the training data set to a diffusion model, wherein the diffusion model is configured to reconstruct and purify the training data set by removing noise associated with the input data and reconstructing the one or more copies of the training data set to create a modified input data set, send the modified input data set to a fixed classifier, and output a classification associated with the input data in response to a majority vote of the classification obtained by the fixed classifier of the modified input data set.

Abstract: A coating composition comprising water and polyurethane particles including cationic triphenyl-phosphonium salt functional groups. Also disclosed is a coated printable medium, with an image-side and a back-side, comprising a base substrate and the coating composition, such as described herein, that is applied over, at least, one side of the base substrate, forming an image-receiving layer. Also disclosed is the method for making such printable medium.

Abstract: The present disclosure describes phosphonium-containing polyurethane compositions, coating compositions, and coated fabric media. In one example, a phosphonium-containing polyurethane composition can include an aqueous liquid vehicle and polyurethane particles. The polyurethane particles can include a polyurethane polymer devoid of end cap groups, the polyurethane polymer also including a polyurethane backbone having side chain groups along the polyurethane backbone. The side chain groups can collectively include aliphatic phosphonium salts and polyalkylene oxide groups.

Abstract: Disclosed herein are related to a memory cell including one or more programmable resistors and a control transistor. In one aspect, a programmable resistor includes a gate structure and one or more source/drain structures for forming a transistor. A resistance of the programmable resistor may be set by applying a voltage to the gate structure, while the control transistor is enabled. Data stored by the programmable resistor can be read by sensing current through the programmable resistor, while the control transistor is disabled. In one aspect, the one or more programmable resistors and the control transistor are implemented by same type of components, allowing the memory cell to be formed in a compact manner through a simplified the fabrication process.

Abstract: A resistive memory device includes a bottom electrode, a top electrode and a resistance changing element. The top electrode is disposed above and spaced apart from the bottom electrode, and has a downward protrusion aligned with the bottom electrode. The resistance changing element covers side and bottom surfaces of the downward protrusion.

Abstract: The present invention provides a method for treating a copper-containing waste etching solution, which includes: preparing basic copper chloride nanometer seed crystals and synthesizing basic copper chloride mono-crystals; making an acidic waste etching solution subjected to agglomeration reaction with an ammonium-containing solution and slurry containing the basic copper chloride mono-crystals to obtain basic copper chloride crystal particles and copper-removed waste solution; making an alkaline waste etching solution react with sulfuric acid to obtain a copper sulfate mixed solution; and then evaporating, concentrating, cooling and crystallizing the copper sulfate mixed solution obtained by the reaction of the alkaline waste etching solution and the sulfuric acid in sequence to obtain copper sulfate pentahydrate solids.

Abstract: Disclosed herein are related to a memory cell including one or more programmable resistors and a control transistor. In one aspect, a programmable resistor includes a gate structure and one or more source/drain structures for forming a transistor. A resistance of the programmable resistor may be set by applying a voltage to the gate structure, while the control transistor is enabled. Data stored by the programmable resistor can be read by sensing current through the programmable resistor, while the control transistor is disabled. In one aspect, the one or more programmable resistors and the control transistor are implemented by same type of components, allowing the memory cell to be formed in a compact manner through a simplified the fabrication process.

Abstract: The present invention provides a method for analysis and determination of the heavy metal occurrence key mineral phases in industrial solid waste, by performing N concentration gradients dissociation determination of the heavy metal solid waste to be tested under the same dissociation conditions, to give the dissociation degrees of the heavy metal elements to be tested at N different concentration gradients; the dissociated solid residues after dissociation being quantitatively analyzed for the mineral phase, to give the relative content of each mineral phase in the M mineral phases of the heavy metal solid waste to be tested; then calculating to give the occurrence distribution proportion of the heavy metal elements in the mineral phase, which are accumulated from high to low; the occurrence key mineral phase whose cumulative occurrence proportion exceeds the preset cumulative threshold value is determined to be the key mineral phase of the heavy metal elements.

Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a first transistor, a first resistive random access memory (RRAM) resistor, and a second RRAM resistor. The first resistor includes a first resistive material layer, a first electrode shared by the second resistor, and a second electrode. The second resistor includes the first electrode, a second resistive material layer, and a third electrode. The first electrode is electrically coupled to the first transistor.