Abstract: A programmable anti-fuse element includes a substrate (224), an N-well (426) in the substrate, an electrically insulating layer (427) over the N-well, and a gate electrode (430) over the electrically insulating layer. The gate electrode has n-type doping so that the N-well is able to substantially contain within its boundaries a current generated following a programming event of the programmable anti-fuse element. In the same or another embodiment, a twice-programmable fuse element (100) includes a metal gate fuse (110) and an oxide anti-fuse (120) such as the programmable anti-fuse element just described.

Abstract: Techniques and circuitry are disclosed for efficiently implementing programmable memory array circuit architectures, such as PROM, OTPROM, and other such programmable non-volatile memories. The circuitry employs an antifuse scheme that includes an array of memory bitcells, each containing a program device and an antifuse element configured with current path isolation well and for storing the memory cell state. The bitcell configuration, which can be used in conjunction with column/row select circuitry, power selector circuitry, and/or readout circuitry, allows for high-density memory array circuit designs and layouts.

Abstract: An array of memory cells is disclosed. The memory cell includes a fuse and at least one transistor. The transistor is used to control the programming or sensing of the fuse. A program voltage is applied to a stack of first and second conductive layers. A first portion of the stack couples the program voltage to a terminal of the transistor in a cell. A second portion of the stack couples the program voltage to a terminal of the transistor in another cell.

Abstract: A plurality of fuse cells are arranged in an array. One or more fuse cells include a pair of fuse devices to output a pair of voltages, respectively, wherein the pair of fuse devices are redundantly programmed. A sense amplifier is coupled to the plurality of fuse cells to read the pair of voltage outputs from each of the plurality of fuse cells, respectively. A comparator circuit is coupled to the sense amplifier to compare the pair of voltage outputs for each of the plurality of fuse cells and to output the compared result.

Abstract: A programmable ROM (PROM) architecture includes cascode NMOS transistors with a fuse bit cell that is arrayed, with sleep transistors located in each column of the array that in a standby mode shut down the entire fuse array. A fuse redundancy scheme may be used to repair a defective fuse row.

Abstract: An apparatus, a method, and a system for fuse cells are disclosed herein. In various embodiments, a fuse cell may include circuitry to adjust a sensing margin. A fuse cell may include first and second fuse cells, and first and second resistance devices. The first resistance device may be configured to adjust a first voltage output from the first fuse cell, and the second resistance device may be configured to adjust a second voltage output from the second fuse cell. The first and second resistance devices may be configured adjust the first and second voltages asymmetrically.

Abstract: An apparatus, a method, and a system for a fuse cell array are disclosed herein. A plurality of fuse cells are arranged in an array. One or more fuse cells include a pair of fuse devices to output a pair of voltages, respectively, wherein the pair of fuse devices are redundantly programmed. A sense amplifier is coupled to the plurality of fuse cells to read the pair of voltage outputs from each of the plurality of fuse cells, respectively. A comparator circuit is coupled to the sense amplifier to compare the pair of voltage outputs for each of the plurality of fuse cells and to output the compared result.

Abstract: An embodiment of the present invention is a technique to program a fuse. A program circuit generates first and second currents to program the fuse. The second current is higher than the first current. A control circuit controls generating the first and second currents in succession.

Abstract: Although there are a number of techniques available to reduce leakage current, there is still considerable room for improvement. Accordingly, the present inventors devised, among other things, an exemplary method which entails defining first and second leakage-reduction vectors for respective first and second portions of an integrated circuit, such as a microprocessor. The leakage-reduction vectors, in some embodiments, set the first and second portion to minimum leakage states and thus promise to reduce leakage power and extend battery life in devices that incorporate this technology.

Abstract: An apparatus, a method, and a system for fuse cells are disclosed herein. In various embodiments, a fuse cell may include circuitry to adjust a sensing margin.

Abstract: An apparatus, a method, and a system for a fuse cell are disclosed herein. In various embodiments, a fuse cell may comprise a standby circuitry to reduce a voltage drop across a fuse device.

Abstract: An apparatus, a method, and a system for a fuse array are disclosed herein. In some embodiments, fuse array may comprise a plurality of fuse cells and a single sense amplifier coupled to plurality of fuse cells to asynchronously sense one or more voltages output by the plurality of fuse cells, one fuse cell at a time.

Abstract: Although there are a number of techniques available to reduce leakage current, there is still considerable room for improvement. Accordingly, the present inventors devised, among other things, an exemplary method which entails defining first and second leakage-reduction vectors for respective first and second portions of an integrated circuit, such as a microprocessor. The leakage-reduction vectors, in some embodiments, set the first and second portion to minimum leakage states and thus promise to reduce leakage power and extend battery life in devices that incorporate this technology.

Abstract: A flip-flop circuit comprising a first stage having a transmission gate to receive a data signal from an input node, and a second stage connected to the first stage, the second stage having another transmission gate to transfer the data signal to a memory unit, wherein the memory unit provides complementary output signals.

Abstract: A low power, high performance flip-flop includes a first branch having a number of transistors connected in series, and a second branch having a number of transistors connected in series. A clock signal and a data input signal are coupleable to the first and second branches of the circuit, the circuit generating a stable logic one or logic zero. The circuit has low power consumption and high performance speed.