Abstract: In one embodiment, a method includes providing a semiconductor substrate having a trench disposed thereon and forming a plurality of layers in the trench. The plurality of layers formed in the trench is etched thereby providing at least one etched layer having a top surface that lies below a top surface of the trench. In a further embodiment, this may provide for a substantially v-shaped opening or entry to the trench for the formation of further layers.

Abstract: A semiconductor device and a method for fabricating the semiconductor device are disclosed. A gate stack is formed over a surface of the substrate. A recess cavity is formed in the substrate adjacent to the gate stack. A first epitaxial (epi) material is then formed in the recess cavity. A second epi material is formed over the first epi material. A portion of the second epi material is removed by a removing process. The disclosed method provides an improved method by providing a second epi material and the removing process for forming the strained feature, therefor, to enhance carrier mobility and upgrade the device performance.

Abstract: A method of semiconductor device fabrication includes forming a first dummy gate structure in a first region of a semiconductor substrate and forming a second dummy gate structure in a second region of the semiconductor substrate. A protective layer (e.g., oxide and/or silicon nitride hard mask) is formed on the second dummy gate structure. The first dummy gate structure is removed after forming the protective layer, thereby providing a first trench. A capping layer (e.g., silicon) is formed in the first trench. A metal gate structure may be formed on the capping layer. The protective layer may protect the second dummy gate structure during the removal of the first dummy gate structure.

Abstract: A method of semiconductor device fabrication includes forming a first dummy gate structure in a first region of a semiconductor substrate and forming a second dummy gate structure in a second region of the semiconductor substrate. A protective layer (e.g., oxide and/or silicon nitride hard mask) is formed on the second dummy gate structure. The first dummy gate structure is removed after forming the protective layer, thereby providing a first trench. A capping layer (e.g., silicon) is formed in the first trench. A metal gate structure may be formed on the capping layer. The protective layer may protect the second dummy gate structure during the removal of the first dummy gate structure.

Abstract: In one embodiment, a method includes providing a semiconductor substrate having a trench disposed thereon and forming a plurality of layers in the trench. The plurality of layers formed in the trench is etched thereby providing at least one etched layer having a top surface that lies below a top surface of the trench. In a further embodiment, this may provide for a substantially v-shaped opening or entry to the trench for the formation of further layers. Further, a device having a modified profile metal gate for example having at least one layer of the metal.

Abstract: A semiconductor device and a method for fabricating the semiconductor device are disclosed. A gate stack is formed over a surface of the substrate. A recess cavity is formed in the substrate adjacent to the gate stack. A first epitaxial (epi) material is then formed in the recess cavity. A second epi material is formed over the first epi material. A portion of the second epi material is removed by a removing process. The disclosed method provides an improved method by providing a second epi material and the removing process for forming the strained feature, therefor, to enhance carrier mobility and upgrade the device performance.

Abstract: The present invention relates to a sector of fan and its manufacturing method, including non-skeleton sector and skeleton sector. The non-skeleton sector of fan is molded by injecting polyurethane foam into a sector molding die; the skeleton sector of fan is comprised of a main body and a framework, wherein said main body and the framework are molded together in similar shape with solid casting resin or other similar material; said framework made of steel wire according the sector's shape and size is comprised of an outer shaped ring, reinforcing ribs and a core bar, if necessary inner shaped rings and crossing reinforcing ribs employed for enhancing the intensity of the sector, but it is always in grid structure. Said outer shaped ring, the reinforcing ribs and the core bar are fastened together, and then an assembling disk is fixed on the back end.

Abstract: The present invention relates to a lampshade and manufacturing method, including how to manufacture the framework components and how to combine them together; said framework components include upper ring, low ring, linking members, ring connectors, upper and low socket adaptors; wherein said upper and low rings are made of circular steel bar in butt welding, and the ring plugs are welded on the stem of ring in uniform distribution, which is made of punched steel sheet by die; said upper and low socket bases of the framework are molded with plastic in one time; said linking members of the framework are made of punched steel sheet, which is plugged into the upper and low plastic socket bases with the both ends respectively; the plastic socket bases are connected to the upper and low rings together via the ring plugs; the combined lampshade framework appears into small top and big bottom. Said framework structure has high strength, not easy damage, and good looking feathers.

Abstract: A lamp head with multiple luminous modes has a frame body. A lateral side of the frame body having a through hole. An inner wall of the through hole has a plurality of clamp seats. Each clamp seat has a positioning pin and an elastomer. Masks are installed on the positioning pin and are clamped by the clamp seat so as to be positioned in the frame body. Thereby, the assembly of the lamp head is formed. The masks are made of material with the same or different transparencies. Thereby, when the light is emitted, by the arrangement of the masks, the lamp present a luminous modes selected from same transparency at two sides different transparencies at two sides, and only one side being transparent.